JPH09231821A - Luminaire and method for maintaining illuminance - Google Patents
Luminaire and method for maintaining illuminanceInfo
- Publication number
- JPH09231821A JPH09231821A JP8083499A JP8349996A JPH09231821A JP H09231821 A JPH09231821 A JP H09231821A JP 8083499 A JP8083499 A JP 8083499A JP 8349996 A JP8349996 A JP 8349996A JP H09231821 A JPH09231821 A JP H09231821A
- Authority
- JP
- Japan
- Prior art keywords
- surface layer
- arc tube
- light
- semiconductor particles
- covering
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000000034 method Methods 0.000 title claims abstract description 9
- 239000002245 particle Substances 0.000 claims abstract description 30
- 239000004065 semiconductor Substances 0.000 claims abstract description 27
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 27
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims abstract description 25
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 15
- 238000005406 washing Methods 0.000 claims abstract description 7
- 239000000377 silicon dioxide Substances 0.000 claims abstract description 6
- 235000012239 silicon dioxide Nutrition 0.000 claims abstract description 3
- 239000002344 surface layer Substances 0.000 claims description 52
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 claims description 19
- 239000010410 layer Substances 0.000 claims description 16
- 239000011347 resin Substances 0.000 claims description 9
- 229920005989 resin Polymers 0.000 claims description 9
- 238000005286 illumination Methods 0.000 claims description 8
- 230000003287 optical effect Effects 0.000 claims description 6
- 230000005284 excitation Effects 0.000 claims description 4
- 229910018557 Si O Inorganic materials 0.000 claims description 3
- 229910052783 alkali metal Inorganic materials 0.000 claims description 3
- 150000001340 alkali metals Chemical class 0.000 claims description 3
- 238000009792 diffusion process Methods 0.000 claims description 3
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Inorganic materials [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 claims description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 abstract description 4
- 230000000694 effects Effects 0.000 abstract description 4
- 239000010936 titanium Substances 0.000 abstract description 4
- 229910052719 titanium Inorganic materials 0.000 abstract description 4
- 239000000203 mixture Substances 0.000 abstract description 3
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 abstract description 2
- 229910021529 ammonia Inorganic materials 0.000 abstract description 2
- 239000008119 colloidal silica Substances 0.000 abstract description 2
- 230000001815 facial effect Effects 0.000 abstract 4
- 229910052681 coesite Inorganic materials 0.000 abstract 1
- 229910052906 cristobalite Inorganic materials 0.000 abstract 1
- 238000001556 precipitation Methods 0.000 abstract 1
- 229910052682 stishovite Inorganic materials 0.000 abstract 1
- 229910052905 tridymite Inorganic materials 0.000 abstract 1
- 238000004140 cleaning Methods 0.000 description 7
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 6
- -1 silicon alkoxide Chemical class 0.000 description 5
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 4
- 229910004298 SiO 2 Inorganic materials 0.000 description 4
- 229910010413 TiO 2 Inorganic materials 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000007787 solid Substances 0.000 description 4
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 3
- 239000011248 coating agent Substances 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 239000003921 oil Substances 0.000 description 3
- 230000001699 photocatalysis Effects 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- TUQLLQQWSNWKCF-UHFFFAOYSA-N trimethoxymethylsilane Chemical compound COC([SiH3])(OC)OC TUQLLQQWSNWKCF-UHFFFAOYSA-N 0.000 description 3
- 125000000217 alkyl group Chemical group 0.000 description 2
- 239000003795 chemical substances by application Substances 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 238000007598 dipping method Methods 0.000 description 2
- 238000010304 firing Methods 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 230000007062 hydrolysis Effects 0.000 description 2
- 238000006460 hydrolysis reaction Methods 0.000 description 2
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 238000002156 mixing Methods 0.000 description 2
- 230000000704 physical effect Effects 0.000 description 2
- RMAQACBXLXPBSY-UHFFFAOYSA-N silicic acid Chemical compound O[Si](O)(O)O RMAQACBXLXPBSY-UHFFFAOYSA-N 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 229920003051 synthetic elastomer Polymers 0.000 description 2
- VXUYXOFXAQZZMF-UHFFFAOYSA-N titanium(IV) isopropoxide Chemical compound CC(C)O[Ti](OC(C)C)(OC(C)C)OC(C)C VXUYXOFXAQZZMF-UHFFFAOYSA-N 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 239000002585 base Substances 0.000 description 1
- 238000002144 chemical decomposition reaction Methods 0.000 description 1
- 238000009833 condensation Methods 0.000 description 1
- 230000005494 condensation Effects 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 230000018044 dehydration Effects 0.000 description 1
- 238000006297 dehydration reaction Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000018109 developmental process Effects 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 239000003925 fat Substances 0.000 description 1
- 239000010419 fine particle Substances 0.000 description 1
- 230000020169 heat generation Effects 0.000 description 1
- 230000005660 hydrophilic surface Effects 0.000 description 1
- 230000002209 hydrophobic effect Effects 0.000 description 1
- 230000005661 hydrophobic surface Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 230000005764 inhibitory process Effects 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 239000011344 liquid material Substances 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 239000011941 photocatalyst Substances 0.000 description 1
- 230000001443 photoexcitation Effects 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 239000004417 polycarbonate Substances 0.000 description 1
- 229920000515 polycarbonate Polymers 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 239000011269 tar Substances 0.000 description 1
- 231100000331 toxic Toxicity 0.000 description 1
- 230000002588 toxic effect Effects 0.000 description 1
Classifications
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F28—HEAT EXCHANGE IN GENERAL
- F28F—DETAILS OF HEAT-EXCHANGE AND HEAT-TRANSFER APPARATUS, OF GENERAL APPLICATION
- F28F13/00—Arrangements for modifying heat-transfer, e.g. increasing, decreasing
- F28F13/18—Arrangements for modifying heat-transfer, e.g. increasing, decreasing by applying coatings, e.g. radiation-absorbing, radiation-reflecting; by surface treatment, e.g. polishing
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F24—HEATING; RANGES; VENTILATING
- F24F—AIR-CONDITIONING; AIR-HUMIDIFICATION; VENTILATION; USE OF AIR CURRENTS FOR SCREENING
- F24F8/00—Treatment, e.g. purification, of air supplied to human living or working spaces otherwise than by heating, cooling, humidifying or drying
- F24F8/20—Treatment, e.g. purification, of air supplied to human living or working spaces otherwise than by heating, cooling, humidifying or drying by sterilisation
- F24F8/22—Treatment, e.g. purification, of air supplied to human living or working spaces otherwise than by heating, cooling, humidifying or drying by sterilisation using UV light
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F28—HEAT EXCHANGE IN GENERAL
- F28F—DETAILS OF HEAT-EXCHANGE AND HEAT-TRANSFER APPARATUS, OF GENERAL APPLICATION
- F28F2245/00—Coatings; Surface treatments
- F28F2245/02—Coatings; Surface treatments hydrophilic
Landscapes
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- General Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Thermal Sciences (AREA)
- Chemical & Material Sciences (AREA)
- Combustion & Propulsion (AREA)
- Vessels And Coating Films For Discharge Lamps (AREA)
- Catalysts (AREA)
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は清掃性及び自己浄化
性に優れた照明器具とその照度維持方法に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a luminaire excellent in cleaning property and self-cleaning property and a method for maintaining illuminance thereof.
【０００２】[0002]
【従来の技術】蛍光灯等の照明器具の表面に酸化チタン
（ＴiＯ2）膜を形成して、自己浄化性を高める提案が、
学会予稿集（第２回シンポジウム「光触媒の最近の展
開」、1995年12月25日 於：東京大学）、特開平６−２
５８５７号公報、特開平７−５１６４６号公報及び特開
平７−１１１１０４号公報になされている。2. Description of the Related Art Proposals have been made to improve the self-cleaning property by forming a titanium oxide (TiO 2 ) film on the surface of lighting equipment such as a fluorescent lamp.
Proceedings of the conference (2nd symposium "Recent Developments of Photocatalysts", December 25, 1995 at the University of Tokyo), JP-A-6-2
5857, JP-A-7-51646 and JP-A-7-111104.
【０００３】前記学会予稿集では、酸化チタン微粒子を
分散した液剤及びゾルゲル用液剤を蛍光ランプ外面に塗
布することで、ランプ表面に付着しているインクや油等
の汚れが分解され、また同時に悪臭成分も分解されるこ
とが報告されている。特開平６−２５８５７号公報に
は、気体状のチタンイソプロポキシドを蛍光体粒子表面
に噴霧して表面に酸化チタン膜を形成することで、高湿
度下でも輝度低下の少ない蛍光灯を得ることが記載され
ている。特開平７−５１６４６号公報には、酸化チタン
膜をガラス等の表面に形成し、この酸化チタン膜に紫外
線を照射することで、ヤニや油脂成分等の汚れを分解す
ることが開示されている。特開平７−１１１１０４号公
報には、照明カバーの内側面に酸化チタン膜を形成する
ことで、悪臭成分や有毒成分を分解するとともに、有害
な紫外線を蛍光灯から放出しないようにすることが開示
されている。In the above-mentioned proceedings of the academic conference, by applying a liquid agent in which fine particles of titanium oxide are dispersed and a liquid agent for sol-gel to the outer surface of the fluorescent lamp, stains such as ink and oil adhering to the lamp surface are decomposed, and at the same time, a foul odor is given. It has been reported that the components are also decomposed. Japanese Unexamined Patent Publication No. 6-25857 discloses a fluorescent lamp having a small brightness decrease even under high humidity by spraying gaseous titanium isopropoxide on the surface of phosphor particles to form a titanium oxide film on the surface. Is listed. Japanese Patent Application Laid-Open No. 7-51646 discloses that a titanium oxide film is formed on the surface of glass or the like, and the titanium oxide film is irradiated with ultraviolet rays to decompose stains such as tars and oil and fat components. . Japanese Patent Application Laid-Open No. 7-111104 discloses that a titanium oxide film is formed on the inner surface of a lighting cover to decompose odorous and toxic components and prevent harmful ultraviolet rays from being emitted from a fluorescent lamp. Has been done.
【０００４】[0004]
【発明が解決しようとする課題】上記したいずれの先行
例にあっても、照明器具の発光管若しくはカバーに直接
酸化チタン膜を形成し、この酸化チタン膜に紫外線を照
射することによる光触媒作用或いは光半導体作用で汚れ
成分等を化学的に分解するものであり、汚れ成分の量が
多量であって光触媒分解作用が追い付かないような極め
て劣悪な環境下での使用には対処できない。更に、汚れ
が付着した場合の雨水や洗浄水等による洗浄を効果的に
行わせるものではない。In any of the above-mentioned prior art examples, a titanium oxide film is directly formed on the arc tube or the cover of the lighting equipment, and the titanium oxide film is irradiated with ultraviolet rays for photocatalytic action or The photo-semiconductor action chemically decomposes stain components and the like, and cannot be used in an extremely poor environment where the amount of stain components is large and the photocatalytic decomposition action cannot catch up. Further, when dirt is attached, cleaning with rainwater or cleaning water is not effectively performed.
【０００５】[0005]
【課題を解決するための手段】上記課題を解決すべく本
発明に係る照明器具は、発光管または発光管を覆うカバ
ーの外表面に光半導体粒子を含有する表面層を形成し、
またこの表面層が形成される発光管または発光管を覆う
カバーの厚みを、発光源からの照明光が前記光半導体粒
子を励起して表面層に親水性を付与し得る厚さとした。In order to solve the above-mentioned problems, the luminaire according to the present invention has a surface layer containing photo-semiconductor particles formed on the outer surface of an arc tube or a cover covering the arc tube.
The thickness of the arc tube on which the surface layer is formed or the cover covering the arc tube is set so that the illumination light from the light emitting source excites the optical semiconductor particles to impart hydrophilicity to the surface layer.
【０００６】ここで、前記表面層としては、例えばＳi
−Ｏ結合を有する樹脂（ＳiＯ2）中に酸化チタンが分散
して存在する構造が考えられる。Here, as the surface layer, for example, Si
A structure in which titanium oxide is dispersed and present in a resin (SiO 2 ) having an —O bond is considered.
【０００７】また、上記の構造の他に、発光管または発
光管を覆うカバー類の表面に、アルカリ金属（Ｎa等）
の拡散を防止する下地層を形成し、この下地層を介して
光半導体粒子からなる表面層を形成する構造でもよい。
尚プラスチック等の基材上に形成する下地層としてはＳ
i−Ｏ結合を有する樹脂が好ましく、ガラス等の基材上
に形成する下地層としては二酸化ケイ素が好ましい。In addition to the above structure, an alkali metal (Na or the like) is formed on the surface of the arc tube or covers covering the arc tube.
It is also possible to have a structure in which an underlayer for preventing the diffusion of the above is formed and a surface layer made of optical semiconductor particles is formed through this underlayer.
In addition, as an underlayer formed on a substrate such as plastic, S
A resin having an i-O bond is preferable, and silicon dioxide is preferable as an underlayer formed on a substrate such as glass.
【０００８】もともと酸化チタン単独でも多少の親水性
を有するのであるが、下地層を形成することで、発光管
または発光管を覆うカバー類中に含まれる不純物が酸化
チタンに拡散し表面層の親水化を阻害することを防ぐ効
果がある。Originally, titanium oxide alone has some hydrophilicity, but by forming a base layer, the impurities contained in the arc tube or the covers covering the arc tube diffuse into titanium oxide to make the surface layer hydrophilic. It has the effect of preventing the inhibition of oxidization.
【０００９】一方、本発明に係る照度維持方法は、発光
管またはこの発光管を覆うカバーの外表面に光半導体粒
子を含有する表面層が形成されている照明器具を点灯し
て、前記光半導体粒子の励起波長以下の波長の照明光を
前記発光管またはこの発光管を覆うカバーを透過せしめ
て表面層に照射し、光半導体粒子を励起することで前記
表面層を親水性にし、この親水性を呈するようになった
表面層に雨水あるいは洗浄水をかけることで、表面層に
付着している異物を除去するようにした。On the other hand, in the method for maintaining illuminance according to the present invention, the luminaire having a surface layer containing photo-semiconductor particles formed on the outer surface of the arc tube or the cover covering the arc tube is lit to turn on the photo semiconductor. Irradiation light having a wavelength equal to or less than the excitation wavelength of particles is radiated to the surface layer through the light emitting tube or the cover covering the light emitting tube, and the surface layer is made hydrophilic by exciting the photo-semiconductor particles. By applying rainwater or washing water to the surface layer which has become soaked, the foreign matter adhering to the surface layer is removed.
【００１０】また、本発明に係る別の照度維持方法は、
発光管またはこの発光管を覆うカバーの外表面に光半導
体粒子を含有する表面層が形成されている照明器具を点
灯して、前記光半導体粒子の励起波長以下の波長の照明
光を前記発光管またはこの発光管を覆うカバーを透過せ
しめて表面層に照射し、光半導体粒子を励起することで
前記表面層を親水性にして表面層に付着する洗浄水、露
または雨水などの水分を水滴にすることなく薄い水膜と
し、この薄い水膜状態の水分を乾燥せしめるようにし
た。Another illuminance maintaining method according to the present invention is
A lighting device having a surface layer containing photo-semiconductor particles formed on the outer surface of a light-emitting tube or a cover covering the light-emitting tube is turned on to emit illumination light having a wavelength equal to or shorter than the excitation wavelength of the light-semiconductor particles. Or irradiate the surface layer through the cover that covers the arc tube, and make the surface layer hydrophilic by exciting the photo-semiconductor particles to make the surface layer hydrophilic, such as cleaning water, dew or rainwater, which is water droplets. Without doing so, a thin water film was formed, and the water in the thin water film state was dried.
【００１１】本願発明にあっては、化学的な作用に加え
物理的な作用によって汚れを除去する。即ち、化学的な
作用では、酸化チタン等の光半導体粒子にバンドギャッ
プ以上のエネルギーを有する光（紫外線）を照射するこ
とで、光励起により伝導帯に電子を、荷電子帯に正孔を
生じせしめ、電子の持つ還元力、正孔の持つ酸化力によ
って汚れ成分等を分解する。これに加え物理的な作用で
は、光半導体粒子にバンドギャップ以上のエネルギーを
有する光を照射することで、表面層表面の極性が増し
て、物理吸着水量が増加することにより、親水性が向上
し、これにより汚れを分解することなく、雨水や洗浄水
とともにそのまま照明器具の表面から剥離して除去す
る。この作用により、著しい量の汚れが付着し化学的な
分解作用では分解できない場合でも、容易に汚れを除去
でき、照明機能を維持できる。In the present invention, stains are removed by physical action in addition to chemical action. That is, in the chemical action, photo-semiconductor particles such as titanium oxide are irradiated with light (ultraviolet light) having energy higher than the band gap to generate electrons in the conduction band and holes in the valence band by photoexcitation. , The reducing power of electrons and the oxidizing power of holes decompose dirt components. In addition to this, in the physical action, by irradiating the photo-semiconductor particles with light having energy higher than the band gap, the polarity of the surface layer surface is increased and the amount of physically adsorbed water is increased, thereby improving hydrophilicity. By doing so, the dirt can be peeled off and removed from the surface of the lighting fixture as it is along with rainwater and washing water without decomposing the dirt. By this action, even if a considerable amount of dirt adheres and cannot be decomposed by a chemical decomposition action, the dirt can be easily removed and the illumination function can be maintained.
【００１２】[0012]
【発明の実施の形態】以下に本発明の実施の形態を説明
する。 （実施例１）アンモニア解膠型のアナターゼ型チタンゾ
ル（石原産業製ＳＴＳ−１１、溶質濃度３５重量％、平
均結晶粒子径１７ｎｍ）と、コロイダルシリカゾル（日
産化学製スノーテクスＯ、溶質濃度２０重量％、平均結
晶粒子径１５ｎｍ、ｐＨ３）を固形分のモル比で８８：
１２になるように混合した後、図１（ａ）に示す蛍光灯
１（東芝ＦＬ２０ＳＷ）の表面にディッピング法にて塗
布し、４５０℃で３０分焼成し、同図（ｂ）に示すよう
に蛍光灯１の表面にＴiＯ2とＳiＯ2とからなる表面層２
を３μｍの厚さで形成した。また、蛍光灯１の管体の厚
みは２ｍｍでこの厚さは白色蛍光灯から発せられる紫外
線が表面層２に到達するのを妨げない厚さである。上記
によって得られた蛍光灯の焼成直後の表面層の水との接
触角は１５°であった。また、上記蛍光灯を暗所に１週
間放置した後に点灯し、点灯してからの経過時間と接触
角の変化を測定した結果、１週間暗所に放置しても水と
の接触角は変化せず１５°のままであり、更に点灯を開
始すると、１時間程度で接触角は０°（超親水化）さ
れ、点灯中は常時接触角は０°であった。また、点灯を
停止しても１週間程度は接触角は５°未満であった。こ
の蛍光灯を街路において使用した場合、降雨によってセ
ルフクリーニングされることにより、１ヵ月後も全く照
度低下を生じなかった。Embodiments of the present invention will be described below. (Example 1) Ammonia deflocculating type anatase type titanium sol (STS-11 manufactured by Ishihara Sangyo, solute concentration 35% by weight, average crystal particle diameter 17 nm) and colloidal silica sol (Nissan Chemical Snowtex O, solute concentration 20% by weight) , Average crystal particle diameter 15 nm, pH 3) in a molar ratio of solid content of 88:
After mixing so as to be 12, the surface of the fluorescent lamp 1 (Toshiba FL20SW) shown in FIG. 1 (a) was applied by the dipping method, baked at 450 ° C. for 30 minutes, and as shown in FIG. A surface layer 2 made of TiO 2 and SiO 2 on the surface of the fluorescent lamp 1.
Was formed with a thickness of 3 μm. The tube of the fluorescent lamp 1 has a thickness of 2 mm, which is a thickness that does not prevent the ultraviolet rays emitted from the white fluorescent lamp from reaching the surface layer 2. The contact angle with water of the surface layer of the thus obtained fluorescent lamp immediately after firing was 15 °. Further, after the fluorescent lamp was left in the dark for one week and then turned on, the change in contact angle with the elapsed time from the lighting was measured. When the lighting was started, the contact angle was 0 ° (superhydrophilicity) in about 1 hour, and the contact angle was always 0 ° during lighting. Further, the contact angle was less than 5 ° for about one week even after the lighting was stopped. When this fluorescent lamp was used in a street, it was self-cleaned by rainfall, and no decrease in illuminance occurred even after one month.
【００１３】図２（ａ）は紫外線を照射する前の表面層
の概念図であり、この図に示すように、Ｓi原子にアル
キル基（Ｒ）が結合しているため、紫外線を照射する前
の表面層は疎水性を示す。そして、表面層に紫外線を照
射すると、図２（ｂ）に示すように、ＴiＯ2の光半導体
効果或いは光触媒効果によってアルキル基（Ｒ）が水酸
基（ＯＨ）に換わり、この水酸基（ＯＨ）に水素結合に
よって物理吸着水が結合し、表面層の表面に薄い水膜が
形成され、親水性が発揮される。FIG. 2 (a) is a conceptual diagram of the surface layer before irradiation with ultraviolet rays. As shown in this figure, since the alkyl group (R) is bonded to the Si atom, before irradiation with ultraviolet rays. The surface layer of is hydrophobic. Then, when the surface layer is irradiated with ultraviolet rays, as shown in FIG. 2B, the alkyl group (R) is converted into a hydroxyl group (OH) by the photo-semiconductor effect or photocatalytic effect of TiO 2 , and the hydroxyl group (OH) is hydrogenated. By the binding, the physically adsorbed water is bound, a thin water film is formed on the surface of the surface layer, and hydrophilicity is exhibited.
【００１４】（実施例２）図３（ａ）に示す白熱灯３
（三菱ＬＷ１００Ｖ１９Ｗ）の表面にシリコンアルコキ
シドをコーティングした。コーティングの手順は、先ず
テトラエトキシシラン、３６％塩酸、純水、エタノール
を６：２：６：８６（重量比）で混合し、１時間放置し
て混合による発熱がおさまった後、これをディッピング
により白熱灯３の表面に塗布した。次に、チタンアルコ
キシドをその上にコーティングした。コーティングの手
順は、先ずテトラエトキシシランとエタノールを１：９
（重量比）で混合したものに、更に加水分解速度を抑制
するために３６％塩酸をテトラエトキシシランに対し１
０重量％添加して作製した。次に乾燥空気中でこの溶液
を上記シリコンアルコキシド層の上にディッピングし
た。コーティング量は酸化チタン換算で４５μｇ／ｃｍ
2とした。次に、１〜１０分乾燥処理することによりシ
リコンアルコキシド層及びチタンアルコキシド層の加水
分解、脱水縮合を促進し、シリカ層及び無定形酸化チタ
ン層を形成し、その後４５０℃で焼成し、図３（ｂ）に
示すように白熱灯３の表面にＳiＯ2層４とＴiＯ2層５か
らなる表面層２を形成した。(Embodiment 2) Incandescent lamp 3 shown in FIG. 3 (a)
The surface of (Mitsubishi LW100V19W) was coated with silicon alkoxide. The coating procedure is as follows: Tetraethoxysilane, 36% hydrochloric acid, pure water, and ethanol are mixed in a ratio of 6: 2: 6: 86 (weight ratio), and the mixture is left for 1 hour to stop heat generation from the mixing, and then dipping Was applied to the surface of the incandescent lamp 3. Next, titanium alkoxide was coated thereon. The coating procedure is as follows: Tetraethoxysilane and ethanol 1: 9
To the mixture mixed in (weight ratio), 36% hydrochloric acid was added to 1% of tetraethoxysilane to further suppress the hydrolysis rate.
It was prepared by adding 0% by weight. This solution was then dipped in dry air onto the silicon alkoxide layer. Coating amount is 45 μg / cm in terms of titanium oxide
And 2 . Next, by performing a drying treatment for 1 to 10 minutes, hydrolysis and dehydration condensation of the silicon alkoxide layer and the titanium alkoxide layer are promoted to form a silica layer and an amorphous titanium oxide layer, followed by firing at 450 ° C., and FIG. As shown in (b), the surface layer 2 including the SiO 2 layer 4 and the TiO 2 layer 5 was formed on the surface of the incandescent lamp 3.
【００１５】上記によって作製した白熱灯をトイレにお
いて１週間点灯せずに放置したところ、水との接触角は
３０°となった。これを点灯させたところ、６時間で接
触角は０°となった。When the incandescent lamp manufactured as described above was left in the toilet for one week without being turned on, the contact angle with water was 30 °. When this was turned on, the contact angle became 0 ° in 6 hours.
【００１６】（実施例３）シリカゾル（日本合成ゴム社
製のグラスカＡ）中のシリカ分重量と正味のトリメトキ
シメチルシラン（日本合成ゴム社製のグラスカＢ）重量
が３：１となるように混合し、全溶質濃度２０重量％と
した液状物を、図４（ａ）に示すポリカーボネートの照
明カバー６（厚み２ｍｍ）に塗布した。その後、１００
℃で加熱固化し、膜厚５μｍの樹脂層７を形成した。次
に、アナターゼ型酸化チタンゾル（日産化学社製 ＴＡ
−１５ 溶質濃度１０重量％）に上記シリカゾルを添加
し、エタノールで希釈後、上記トリメトキシメチルシラ
ンを添加した溶液を上記樹脂層７の上に塗布した。その
後、１５０℃で加熱固化し、膜厚０．５μｍの表面層２
を形成した。ここで、シリカとトリメトキシメチルシラ
ンの固形分重量（樹脂重量）と酸化チタン固形分重量の
和に対する酸化チタン固形分重量の比率は５０％とし
た。(Example 3) Silica sol (Grasca A manufactured by Japan Synthetic Rubber Co., Ltd.) so that the weight of silica and net trimethoxymethylsilane (Grasca B manufactured by Japan Synthetic Rubber Co.) are 3: 1. A liquid material having a total solute concentration of 20% by weight was mixed and applied to the polycarbonate lighting cover 6 (thickness 2 mm) shown in FIG. 4A. Then 100
The resin layer 7 having a film thickness of 5 μm was formed by heating and solidifying at a temperature of ℃. Next, anatase type titanium oxide sol (TA manufactured by Nissan Kagaku Co., Ltd.
-15 solute concentration (10 wt%) was added to the silica sol, diluted with ethanol, and then a solution containing the trimethoxymethylsilane added was applied onto the resin layer 7. Then, the surface layer 2 having a film thickness of 0.5 μm is solidified by heating at 150 ° C.
Was formed. Here, the ratio of the solid content weight of titanium oxide to the sum of the solid content weight (resin weight) of silica and trimethoxymethylsilane and the solid content weight of titanium oxide was 50%.
【００１７】上記によって作製した表面層の接触角は当
初９０°であったが、点灯してから１週間後の接触角は
０°になった。この照明カバーを付設した照明器具を台
所において使用したところ、飛散した油汚れがカバーに
付着しても、水洗いによって容易に除去可能であった。The contact angle of the surface layer produced as described above was initially 90 °, but the contact angle after one week from lighting was 0 °. When the lighting fixture provided with this lighting cover was used in the kitchen, even if scattered oil stains were attached to the cover, it could be easily removed by washing with water.
【００１８】尚、実施例にあっては照明器具の発光管自
体またはカバーの外表面に表面層を形成した例を示した
が、照明ルーバー、反射板等のカバー類の表面に表面層
を形成してもよい。Although the surface layer is formed on the outer surface of the arc tube of the luminaire or the cover in the embodiment, the surface layer is formed on the surface of the covers such as the illumination louver and the reflection plate. You may.
【００１９】[0019]
【発明の効果】以上に説明した如く本発明に係る照明器
具は、発光管または発光管を覆うカバーの外表面に酸化
チタン等の光半導体粒子を含有するＳi−Ｏ結合を有す
る樹脂等からなる表面層を形成し、或いは発光管または
発光管を覆うカバー類に含まれるアルカリ金属の拡散を
防止する下地層を介して光半導体粒子の層を形成し、更
にこの表面層が形成される発光管または発光管を覆うカ
バーの厚みを、発光源からの照明光が前記光半導体粒子
を励起して表面層に親水性を付与し得る厚さとしたの
で、確実に光半導体粒子を励起せしめる照明光を光半導
体粒子に到達せしめることができる。As described above, the lighting equipment according to the present invention is made of a resin or the like having an Si-O bond containing optical semiconductor particles such as titanium oxide on the outer surface of the arc tube or the cover covering the arc tube. An arc tube in which a surface layer is formed, or a layer of optical semiconductor particles is formed through an underlayer that prevents diffusion of an alkali metal contained in the arc tube or covers covering the arc tube, and further this surface layer is formed. Or, the thickness of the cover that covers the arc tube, the illumination light from the light-emitting source is a thickness that can impart hydrophilicity to the surface layer by exciting the photosemiconductor particles, so that the illumination light that surely excites the photosemiconductor particles can be obtained. It can reach the optical semiconductor particles.
【００２０】そして、光半導体粒子を含有する表面層に
光半導体粒子を励起せしめる照明光が到達することで、
表面層が親水性となり、この親水性を呈するようになっ
た表面層に雨水あるいは洗浄水をかけることで、表面層
に付着している異物を物理的にも除去することが可能に
なり、洗浄効果が大幅に向上する。When the illumination light that excites the photo-semiconductor particles reaches the surface layer containing the photo-semiconductor particles,
The surface layer becomes hydrophilic, and by adding rainwater or washing water to the surface layer that has become hydrophilic, it becomes possible to physically remove the foreign matter adhering to the surface layer, and to wash it. The effect is greatly improved.
【００２１】また、表面層を親水性とすることで、表面
層に付着する洗浄水、露または雨水などの水分が薄い水
膜となるので、短時間のうちに乾燥せしめることがで
き、照明器具としての機能が向上する。Further, by making the surface layer hydrophilic, a water film such as cleaning water, dew or rainwater attached to the surface layer becomes a thin water film, which can be dried in a short time, and the lighting device can be dried. The function as is improved.
【図１】（ａ）は実施例１に係る照明器具の全体図、
（ｂ）はその拡大断面図FIG. 1A is an overall view of a lighting fixture according to a first embodiment,
(B) is an enlarged sectional view
【図２】（ａ）は疎水性表面の概念図、（ｂ）は親水性
表面の概念図2A is a conceptual diagram of a hydrophobic surface, and FIG. 2B is a conceptual diagram of a hydrophilic surface.
【図３】（ａ）は実施例２に係る照明器具の全体図、
（ｂ）はその拡大断面図FIG. 3A is an overall view of a lighting fixture according to a second embodiment,
(B) is an enlarged sectional view
【図４】（ａ）は実施例３に係る照明器具の全体図、
（ｂ）はその拡大断面図FIG. 4A is an overall view of a lighting fixture according to a third embodiment,
(B) is an enlarged sectional view
１…蛍光灯、２…表面層、３…白熱灯、４…ＳiＯ2層、
５…ＴiＯ2層、６…カバー、７…樹脂層。1 ... Fluorescent lamp, 2 ... Surface layer, 3 ... Incandescent lamp, 4 ... SiO 2 layer,
5 ... TiO 2 layer, 6 ... cover, 7 ... resin layer.
Claims (6)
表面に光半導体粒子を含有する表面層が形成され、また
この表面層が形成される発光管または発光管を覆うカバ
ー類の厚みは、発光源からの照明光が前記光半導体粒子
を励起して表面層に親水性を付与し得る厚さとされてい
ることを特徴とする照明器具。1. A surface layer containing optical semiconductor particles is formed on the outer surface of an arc tube or covers for covering the arc tube, and the thickness of the arc tube or the covers for covering the arc tube on which the surface layer is formed is A lighting fixture having a thickness capable of exciting the photo-semiconductor particles with illumination light from a light emitting source to impart hydrophilicity to the surface layer.
記表面層はＳi−Ｏ結合を有する樹脂中に酸化チタンが
分散して存在することを特徴とする照明器具。2. The luminaire according to claim 1, wherein the surface layer comprises titanium oxide dispersed in a resin having a Si—O bond.
記表面層は発光管または発光管を覆うカバー類に含まれ
るアルカリ金属の拡散を防止する下地層を介して形成さ
れていることを特徴とする照明器具。3. The luminaire according to claim 1, wherein the surface layer is formed via an underlayer that prevents diffusion of an alkali metal contained in the arc tube or covers covering the arc tube. And lighting equipment.
記下地層はＳi−Ｏ結合を有する樹脂または二酸化ケイ
素からなり、また前記表面層は酸化チタンを含む層から
なることを特徴とする照明器具。4. The lighting device according to claim 3, wherein the underlayer is made of a resin having Si—O bond or silicon dioxide, and the surface layer is made of a layer containing titanium oxide. Equipment.
の外表面に光半導体粒子を含有する表面層が形成されて
いる照明器具を点灯して、前記光半導体粒子の励起波長
以下の波長の照明光を前記発光管またはこの発光管を覆
うカバー類を透過せしめて表面層に照射し、光半導体粒
子を励起することで前記表面層を親水性にし、この親水
性を呈するようになった表面層に雨水あるいは洗浄水を
かけることで、表面層に付着している異物を除去するこ
とを特徴とする照度維持方法。5. A lighting fixture having a surface layer containing photo-semiconductor particles formed on the outer surface of a light-emitting tube or covers covering the light-emitting tube is turned on to emit light having a wavelength of not more than the excitation wavelength of the light-semiconductor particles. Irradiation light is transmitted through the arc tube or covers for covering the arc tube to irradiate the surface layer, and the surface layer is made hydrophilic by exciting the photo-semiconductor particles, and the surface becomes hydrophilic. A method for maintaining illuminance, characterized by removing foreign matter adhering to a surface layer by applying rainwater or washing water to the layer.
の外表面に光半導体粒子を含有する表面層が形成されて
いる照明器具を点灯して、前記光半導体粒子の励起波長
以下の波長の照明光を前記発光管またはこの発光管を覆
うカバー類を透過せしめて表面層に照射し、光半導体粒
子を励起することで前記表面層を親水性にして表面層に
付着する洗浄水、露または雨水などの水分を薄い水膜と
し、この薄い水膜状態の水分を乾燥せしめることを特徴
とする照度維持方法。6. A lighting fixture having a surface layer containing photo-semiconductor particles formed on the outer surface of a light-emitting tube or covers for covering the light-emitting tube is turned on to emit light having a wavelength not more than the excitation wavelength of the photo-semiconductor particles. Irradiation light is transmitted through the arc tube or covers for covering the arc tube to irradiate the surface layer, and the washing water attached to the surface layer by making the surface layer hydrophilic by exciting the photo-semiconductor particles, dew or A method for maintaining illuminance, characterized in that water such as rainwater is formed into a thin water film, and the water in the thin water film state is dried.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8083499A JPH09231821A (en) | 1995-12-22 | 1996-04-05 | Luminaire and method for maintaining illuminance |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7-354649 | 1995-12-22 | ||
| JP35464995 | 1995-12-22 | ||
| JP8083499A JPH09231821A (en) | 1995-12-22 | 1996-04-05 | Luminaire and method for maintaining illuminance |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH09231821A true JPH09231821A (en) | 1997-09-05 |
Family
ID=93155426
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP8083499A Pending JPH09231821A (en) | 1995-12-22 | 1996-04-05 | Luminaire and method for maintaining illuminance |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH09231821A (en) |
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