JPH09306372A - 半導体イオン注入設備のイオン発生装置 - Google Patents
半導体イオン注入設備のイオン発生装置Info
- Publication number
- JPH09306372A JPH09306372A JP8239089A JP23908996A JPH09306372A JP H09306372 A JPH09306372 A JP H09306372A JP 8239089 A JP8239089 A JP 8239089A JP 23908996 A JP23908996 A JP 23908996A JP H09306372 A JPH09306372 A JP H09306372A
- Authority
- JP
- Japan
- Prior art keywords
- filament
- base plate
- ion
- ion generator
- hole
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
- H01J37/08—Ion sources; Ion guns
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
- H01J37/3171—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/06—Sources
- H01J2237/083—Beam forming
Landscapes
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Electron Sources, Ion Sources (AREA)
- Physical Vapour Deposition (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019960015150A KR970077182A (ko) | 1996-05-08 | 1996-05-08 | 반도체 이온주입설비의 이온발생장치 |
| KR1996-15150 | 1996-05-08 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH09306372A true JPH09306372A (ja) | 1997-11-28 |
Family
ID=19458134
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP8239089A Pending JPH09306372A (ja) | 1996-05-08 | 1996-09-10 | 半導体イオン注入設備のイオン発生装置 |
Country Status (2)
| Country | Link |
|---|---|
| JP (1) | JPH09306372A (ko) |
| KR (1) | KR970077182A (ko) |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6349749B2 (ko) * | 1982-05-07 | 1988-10-05 | Insuchi* Mashinobedenia Imeni Ee Ee Buragonraboba An Sssr | |
| JPH08111198A (ja) * | 1994-10-11 | 1996-04-30 | Ulvac Japan Ltd | イオン源 |
-
1996
- 1996-05-08 KR KR1019960015150A patent/KR970077182A/ko not_active Abandoned
- 1996-09-10 JP JP8239089A patent/JPH09306372A/ja active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6349749B2 (ko) * | 1982-05-07 | 1988-10-05 | Insuchi* Mashinobedenia Imeni Ee Ee Buragonraboba An Sssr | |
| JPH08111198A (ja) * | 1994-10-11 | 1996-04-30 | Ulvac Japan Ltd | イオン源 |
Also Published As
| Publication number | Publication date |
|---|---|
| KR970077182A (ko) | 1997-12-12 |
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