JPH0936075A - Semiconductor wafer cleaning equipment - Google Patents
Semiconductor wafer cleaning equipmentInfo
- Publication number
- JPH0936075A JPH0936075A JP18144495A JP18144495A JPH0936075A JP H0936075 A JPH0936075 A JP H0936075A JP 18144495 A JP18144495 A JP 18144495A JP 18144495 A JP18144495 A JP 18144495A JP H0936075 A JPH0936075 A JP H0936075A
- Authority
- JP
- Japan
- Prior art keywords
- brush
- wafer
- cleaning
- pure water
- ice
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Cleaning Or Drying Semiconductors (AREA)
Abstract
(57)【要約】
【課題】 ブラシに付着する汚染を完全に除去し、逆汚
染を防止すると共に、洗浄能力の向上も図る。
【課題解決手段】製氷槽１０３により、アンモニア水、
過酸化水素水、純水の混合駅の氷より成るブラシ１０１
を形成し、該ブラシによるウェハ１０７の洗浄後、融解
槽１１０にて上記ブラシを融解し、使い捨てる構成とす
る。
(57) 【Abstract】 PROBLEM TO BE SOLVED: To completely remove contaminants attached to a brush, prevent reverse contamination, and improve cleaning ability. SOLUTION: An ice making tank 103 is used to
Brush 101 made of ice in a mixed station of hydrogen peroxide water and pure water
After cleaning the wafer 107 with the brush, the brush is melted in the melting tank 110 to be disposable.
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、半導体ウェハ表面
をブラシを使用して洗浄するブラシスクラブ洗浄装置に
関するものであり、特に、半導体ウェハ表面の高濃度汚
染を洗浄する方法に関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a brush scrub cleaning device for cleaning the surface of a semiconductor wafer using a brush, and more particularly to a method for cleaning high-concentration contamination on the surface of a semiconductor wafer.
【０００２】[0002]
【従来の技術】ブラシスクラブ洗浄は、ウェハ表面に純
水を吐出しながら、回転ブラシをウェハ表面を移動させ
て、ウェハ表面の微粒子，汚染物を物理的な力でこすり
落とす洗浄方法であり、ウェハを洗浄槽に浸漬して洗浄
する方法に比べ洗浄効果が高く、近年、半導体集積回路
製造工程に於けるウェハ洗浄方法として広く使用されて
いる。2. Description of the Related Art Brush scrub cleaning is a cleaning method in which fine particles and contaminants on the wafer surface are scraped off by physical force by moving a rotary brush on the wafer surface while discharging pure water onto the wafer surface. The cleaning effect is higher than the method of cleaning the wafer by immersing it in the cleaning tank, and in recent years, it has been widely used as a wafer cleaning method in the semiconductor integrated circuit manufacturing process.
【０００３】従来の技術では、ブラシスクラブ洗浄で使
用するブラシは、ナイロン，モヘア，スポンジ等で形成
されており、ウェハを半分以上覆うドラム型ブラシをウ
ェハ表面に平行な軸で回転させる方式と、円柱状のブラ
シをウェハ表面に垂直な軸で回転させる方式とに大別さ
れる。後者の方式は、前者の方式に比べてウェハへの微
粒子の再付着が少なく、高密度集積回路製造工程で使用
されるブラシスクラブ洗浄の主流になっている。In the prior art, the brush used for brush scrub cleaning is made of nylon, mohair, sponge, etc., and a drum type brush that covers more than half of the wafer is rotated by an axis parallel to the wafer surface. It is roughly classified into a method of rotating a cylindrical brush on an axis perpendicular to the wafer surface. The latter method has less re-adhesion of fine particles to the wafer than the former method, and is the mainstream of brush scrub cleaning used in the high-density integrated circuit manufacturing process.
【０００４】このブラシスクラブ洗浄装置の一例を図２
に示す。直径２〜３ｃｍ程度の円柱状テフロンブラシ１
０１を、ウェハ１０７の表面に垂直な軸で、３００〜４
００ｒｐｍで回転させながら、ウェハ表面を移動させて
洗浄を行う。ウェハ１０７は通常５００〜１０００ｒｐ
ｍで回転させ、ウェハ表面には、ノズル１０９より純水
又は薬液を吐出することで、ブラシ１０１によってウェ
ハ表面からとれた異物はすみやかにウェハ表面から除去
される。ウェハの乾燥は、ウェハを３０００ｒｐｍ程度
で高速回転させて表面の水を振り切るスピン乾燥で行な
われる。なお、同図に於いて、１０４はブラシアーム、
１０５はブラシ回転機構，１０８はウェハステージであ
る。An example of this brush scrubbing cleaning device is shown in FIG.
Shown in Cylindrical Teflon brush with a diameter of 2-3 cm 1
01 on the axis perpendicular to the surface of the wafer 107,
The wafer surface is moved and cleaned while rotating at 00 rpm. Wafer 107 is usually 500 to 1000 rp
By rotating at m and ejecting pure water or a chemical solution from the nozzle 109 onto the wafer surface, foreign matters taken off from the wafer surface by the brush 101 are promptly removed from the wafer surface. The wafer is dried by spin drying in which the wafer is rotated at a high speed of about 3000 rpm to shake off the water on the surface. In the figure, 104 is a brush arm,
Reference numeral 105 is a brush rotating mechanism, and 108 is a wafer stage.
【０００５】ブラシスクラブ洗浄では、ブラシ自体が洗
浄の際に汚染されるためにブラシの洗浄が必要である。
従来の技術では、ブラシの待機中に、ブラシに純水を吐
出したり、ブラシに純水や洗浄液中で超音波を印加する
洗浄が行なわれている（特開平２−１０９３３３）。Brush scrub cleaning requires cleaning of the brush itself because the brush itself is contaminated during cleaning.
In the related art, while the brush is on standby, pure water is discharged to the brush, or cleaning is performed by applying ultrasonic waves to the brush in pure water or a cleaning liquid (Japanese Patent Laid-Open No. 2-109333).
【０００６】また、ブラシスクラブ洗浄では、ブラシと
ウェハの摩擦によってウェハ表面が帯電しやすく、ウェ
ハ上に形成されている半導体素子が静電破壊されるの
で、除電が必要である。従来の技術では、除電の方法と
して、ナイロン等のブラシ材に炭素等の導電性物質を添
加する方法（特開平３−３８０３６）や、ウェハ表面に
吐出する純水に二酸化炭素を溶解させて導電性を持たせ
る方法（特開平５−２９９４００）が使用されている。In the brush scrub cleaning, the surface of the wafer is easily charged due to the friction between the brush and the wafer, and the semiconductor elements formed on the wafer are electrostatically destroyed. In the prior art, as a method of removing electricity, a method of adding a conductive material such as carbon to a brush material such as nylon (Japanese Patent Laid-Open No. 3-38036) or a method of dissolving carbon dioxide in pure water discharged onto the wafer surface to conduct electricity A method of imparting properties (Japanese Patent Laid-Open No. 5-299400) is used.
【０００７】[0007]
【発明が解決しようとする課題】従来のブラシスクラブ
洗浄の問題点として以下の項目があげられる。Problems to be solved by the conventional brush scrub cleaning include the following items.
【０００８】(1) ブラシスクラブ洗浄後に、異物の付着
したブラシを純水吐出や超音波で洗浄する従来の方法で
は、高濃度汚染されたウェハを洗浄して多量の汚染物が
付着したブラシの洗浄が不可能である。このために、頻
繁なブラシの交換が必要になり、装置稼動時間の低下と
生産コストの増大をもたらす。このような高濃度汚染が
生じる場合として、例えば、近年、半導体集積回路製造
工程のウェハ平坦化に使用されるＣＭＰ(Chemical Mech
anical Polishing)後のウェハ洗浄があげられる。(1) In the conventional method of cleaning the brush with foreign matter adhered thereto with pure water or ultrasonic waves after the brush scrubbing, the highly contaminated wafer is cleaned to remove the brush with a large amount of contaminants. Not washable. For this reason, it is necessary to replace the brush frequently, which leads to a decrease in operating time of the apparatus and an increase in production cost. As a case where such high-concentration contamination occurs, for example, in recent years, CMP (Chemical Mech
Wafer cleaning after anical polishing is included.
【０００９】(2) 上記例のような高濃度汚染ウェハ上の
化学反応で強固に付着した汚染は、ブラシと異物の摩擦
力のみを利用した従来のブラシスクラブ洗浄では除去不
可能である。(2) Contamination strongly adhered by a chemical reaction on a highly contaminated wafer as in the above example cannot be removed by conventional brush scrub cleaning using only the frictional force between the brush and the foreign matter.
【００１０】(3) ブラシスクラブ洗浄中のウェハ帯電を
防止するために行なわれている、従来の、ブラシに炭素
を添加する方法や、純水に二酸化炭素を溶かしてウェハ
表面に吐出する方法では、ウェハ表面に炭素汚染が生
じ、ウェハ表面に形成される半導体素子特性劣化の原因
になる。また、装置設備や、ブラシのコスト増加がさけ
られない。(3) In the conventional method of adding carbon to the brush, or the method of dissolving carbon dioxide in pure water and discharging it onto the wafer surface, which is performed in order to prevent wafer charging during brush scrub cleaning. Carbon contamination on the wafer surface causes deterioration of characteristics of semiconductor elements formed on the wafer surface. In addition, the cost of the equipment and the brush is unavoidably increased.
【００１１】本発明の目的は、高濃度に汚染されたウェ
ハを洗浄するために、ブラシスクラブ洗浄の洗浄能力を
向上させる方法，ブラシに付着する高濃度汚染を効果的
に除去してウェハの逆汚染を防止する方法，ウェハ表面
を汚染することなく、ウェハの除電を行う方法を提供す
ることである。An object of the present invention is to improve the cleaning ability of brush scrub cleaning in order to clean highly contaminated wafers. It is an object of the present invention to provide a method for preventing contamination, and a method for eliminating static electricity on a wafer without contaminating the surface of the wafer.
【００１２】[0012]
【課題を解決するための手段】前記問題点を解決するた
めの本発明の手段は、ブラシを、アンモニア水（ＮＨ4
ＯＨ），過酸化水素水（Ｈ2Ｏ2），純水の混合液、又は
界面活性剤，純水の混合液の氷で、各ウェハの洗浄前に
形成し、ブラシを直接、振動数が１〜２ＭＨｚの超音波
で振動させながら、ウェハ表面で移動，回転させて、ブ
ラシスクラブ洗浄を行い、各ウェハの洗浄毎に、ブラシ
を融解して使い捨てるものである。さらに、導電性の上
記ブラシを接地（アース）することによって、洗浄中の
ウェハ帯電を抑制するものである。The means of the present invention for solving the above-mentioned problems is to use a brush with ammonia water (NH 4
OH), hydrogen peroxide solution (H 2 O 2 ), pure water mixture, or ice with a surfactant / pure water mixture, formed before cleaning each wafer. While vibrating with an ultrasonic wave of 1 to 2 MHz, the wafer is moved and rotated on the surface of the wafer for brush scrub cleaning, and the brush is melted for each cleaning of each wafer to be thrown away. Further, the electrically conductive brush is grounded (earthed) to suppress wafer charging during cleaning.
【００１３】[0013]
【発明の実施の形態】図１は本発明によるブラシスクラ
ブ洗浄装置の概略図を示している。本洗浄装置のブラシ
１０１は、超音波発振器１０２のまわりに、アンモニア
水，過酸化水素水，純水の混合液の氷で形成される。こ
れらの薬液の最適体積比は、１：１：５〜１：１：１５
である。このブラシは、上記薬液を入れた製氷槽１０３
に超音波発振器部分を浸漬し、上記薬液混合液を発振器
１０２のまわりに凍結させて形成する。1 shows a schematic view of a brush scrub cleaning device according to the present invention. The brush 101 of the present cleaning device is formed of ice, which is a mixed liquid of ammonia water, hydrogen peroxide water, and pure water, around the ultrasonic oscillator 102. The optimal volume ratio of these chemicals is 1: 1: 5 to 1: 1: 15.
It is. This brush is used in the ice-making tank 103 containing the above chemical solution.
The ultrasonic oscillator portion is dipped in and the chemical liquid mixture is frozen around the oscillator 102 to form.
【００１４】ブラシのアーム１０４には、ブラシの回転
機構１０５が設けられ、ブラシはアース１０６に接続さ
れている。被洗浄ウェハ１０７は、ウェハステージ１０
８に保持される。ウェハステージを１０００〜１５００
ｒｐｍで回転させて、ウェハ表面に、ノズル１０９より
純水又は薬液を噴出し、超音波を印加して振動させたブ
ラシ１０１を、３００〜４００ｒｐｍで回転させなが
ら、ウェハ表面を移動させることにより、ウェハ表面が
洗浄される。超音波の振動数の最適値は１〜２ＭＨｚで
ある。また、洗浄中にブラシの融解を抑えるために、ウ
ェハ表面に吐出する純水（薬液）温度は１０℃以下、洗
浄時間は６０秒以内が好ましい条件である。ブラシの押
しつけ圧力の最適値は１〜２ｋｇ／ｃｍ2である。The brush arm 104 is provided with a brush rotating mechanism 105, and the brush is connected to a ground 106. The wafer 107 to be cleaned is the wafer stage 10
Held at 8. Wafer stage 1000 to 1500
By rotating the brush 101 rotated at 300 rpm and rotating the rpm at 300 to 400 rpm, the brush 101 jetted with pure water or a chemical solution from the nozzle 109 and oscillated by applying ultrasonic waves to the wafer surface is rotated. The wafer surface is cleaned. The optimum value of the ultrasonic frequency is 1 to 2 MHz. Further, in order to suppress melting of the brush during cleaning, it is preferable that the temperature of pure water (chemical solution) discharged onto the wafer surface is 10 ° C. or lower and the cleaning time is 60 seconds or less. The optimum pressing pressure of the brush is 1 to 2 kg / cm 2 .
【００１５】ウェハ１０７の乾燥は、ウェハステージ１
０８を３０００ｒｐｍで高速回転させて、ウェハ表面の
水分を振り切るスピン乾燥で行なわれる。The wafer 107 is dried by the wafer stage 1
08 is rotated at 3000 rpm at high speed to spin-dry the water on the wafer surface.
【００１６】１枚のウェハ１０７に対して上記のブラシ
スクラブ洗浄が完了すると、融解槽１１０でブラシ１０
１に５０〜６０℃の温純水を吐出し、ブラシを溶かした
後、再び、次のウェハの洗浄のために、製氷槽１０３で
新しくブラシが形成される。上記の実施例に於いて、界
面活性剤，純水混合液を製氷槽に導入して、ブラシを上
記の混合液で形成することも可能である。この場合に使
用する界面活性剤としては、非イオン・フッ素系界面活
性剤、アニオン・フッ素系界面活性剤、非イオン・アル
キルフェニールエーテルや、脂肪族カルボン酸、その
塩、アミン、アルコール混合界面活性剤があげられる。When the above-mentioned brush scrub cleaning is completed for one wafer 107, the brush 10 is removed from the melting tank 110.
After hot water of 50 to 60 ° C. is discharged to 1 and the brush is melted, a new brush is formed again in the ice making tank 103 for cleaning the next wafer. In the above embodiment, it is also possible to introduce a mixed solution of a surfactant and pure water into an ice making tank to form a brush with the above mixed solution. The surfactants used in this case include nonionic / fluorine surfactants, anionic / fluorine surfactants, nonionic / alkyl phenyl ethers, aliphatic carboxylic acids, their salts, amines and alcohol mixed surfactants. Agent.
【００１７】また、微粒子を含んだ液体層をブラシ下か
ら排出するよう、氷ブラシのウェハ側表面に、うずまき
状や放射状に溝をもうけてもよい。Further, in order to discharge the liquid layer containing fine particles from under the brush, a spiral or radial groove may be formed on the wafer side surface of the ice brush.
【００１８】アンモニア水，過酸化水素水，純水の混合
液、又は界面活性剤、純水混合液の氷で形成されたブラ
シを、圧力１〜２ｋｇ／ｃｍ2でウェハ表面に押しあて
ると、ウェハ表面とブラシ間に０．１〜０．５ｍｍの液
体層がブラシの融解によって形成される。上記のブラシ
に直接印加された振動数１〜２ＭＨｚの超音波は、この
液体層を通してウェハ表面に効率よく伝播し、ウェハ表
面に強固に付着している微粒子を、物理的な力でシリコ
ン表面から脱離させる。脱離した微粒子は、液体層の表
面張力でブラシの動きに引かれ、ウェハ表面からすみや
かに掃き出され、特に、１μｍ以下の微粒子の洗浄効果
が著しく向上する。A brush made of a mixture of ammonia water, hydrogen peroxide solution and pure water, or a mixture of a surfactant and a pure water of ice is pressed against the wafer surface at a pressure of 1 to 2 kg / cm 2 . A liquid layer of 0.1-0.5 mm is formed between the wafer surface and the brush by melting the brush. The ultrasonic waves with a frequency of 1 to 2 MHz directly applied to the brush efficiently propagate through the liquid layer to the wafer surface, and the fine particles firmly attached to the wafer surface are removed from the silicon surface by physical force. Detach. The desorbed fine particles are attracted by the movement of the brush due to the surface tension of the liquid layer and swept out from the surface of the wafer promptly, and particularly the cleaning effect of fine particles of 1 μm or less is remarkably improved.
【００１９】また、液体層が、氷ブラシの圧力によっ
て、２〜３気圧以上に加圧されているために、微細穴へ
の液体の浸入が容易になり、更に、超音波印加で生じる
圧力変動の減圧時に、穴内部へ浸入した液体が入れかわ
りやすくなるために、従来のブラシスクラブ洗浄では殆
んど除去できなかった、ウェハ表面の微細穴内部の汚染
物に対しても洗浄効果が向上する。Further, since the liquid layer is pressurized to a pressure of 2 to 3 atmospheres or more by the pressure of the ice brush, it becomes easy for the liquid to penetrate into the fine holes, and further, the pressure fluctuation caused by the application of ultrasonic waves. Since the liquid that has penetrated into the holes is easily replaced during depressurization, the cleaning effect improves even for contaminants inside the fine holes on the wafer surface that could hardly be removed by conventional brush scrub cleaning. .
【００２０】上記の液体層は、ブラシが徐々に融解して
いく際に形成されるものであり、ブラシをウェハ表面で
移動，回転させても、定常的に形成されている。上記液
体層は、エッチング作用のあるアンモニア水，過酸化水
素水，純水混合液、又は、強固な汚染層の付着力を電気
化学的な力で弱める界面活性剤、純水混合液で形成され
ているので、ウェハ上に強固に付着している異物に対す
る化学的な洗浄効果が相乗される。さらに、上記液体層
は、ウェハとブラシが直接接触することを防止するバッ
ファ層として働き、氷によるウェハへのダメージが抑制
される。The above liquid layer is formed when the brush gradually melts, and is constantly formed even when the brush is moved and rotated on the wafer surface. The liquid layer is formed of an ammonia water, a hydrogen peroxide solution, a pure water mixed solution having an etching action, or a surface active agent and a pure water mixed solution which weaken the adhesive force of a strong contaminant layer by an electrochemical force. Therefore, the chemical cleaning effect on the foreign matter strongly adhered on the wafer is synergized. Further, the liquid layer acts as a buffer layer that prevents the wafer and the brush from coming into direct contact with each other, and damage to the wafer due to ice is suppressed.
【００２１】上記ブラシに、ウェハの洗浄によって付着
する汚染物は、ブラシを溶かすことによって高濃度汚染
の場合でも完全に除去される。上記ブラシは、従来のブ
ラシに比べ極めて廉価かつ容易に形成できるために、各
ウェハ洗浄毎にブラシを融解除去しても、生産コスト増
加及び装置稼動低下は生じない。The contaminants attached to the brush by cleaning the wafer are completely removed by melting the brush even in the case of high-concentration contamination. Since the brush can be formed much cheaper and easier than the conventional brush, even if the brush is melted and removed after each wafer cleaning, the production cost does not increase and the operation of the apparatus does not decrease.
【００２２】さらに、上記ブラシと液体層は比抵抗１０
０Ω・ｃｍ以下の導電性を有するので、ブラシを接地
（アース）することによって、ブラシとウェハ接触面で
生じる帯電を、ウェハ表面を炭素で汚染することなく迅
速に除去することが可能になる。Further, the brush and the liquid layer have a specific resistance of 10
Since it has a conductivity of 0 Ω · cm or less, by grounding the brush, it is possible to quickly remove the electrostatic charge generated at the contact surface between the brush and the wafer without contaminating the wafer surface with carbon.
【００２３】[0023]
【発明の効果】本発明のブラシスクラブ洗浄装置では、
高濃度汚染ウェハを洗浄する際にブラシに付着する汚染
を完全に除去することが可能になり、汚染されたブラシ
による被洗浄ウェハの逆汚染が抑制される。また、洗浄
力の向上によって、従来のブラシスクラブ洗浄では除去
不可能であった、ウェハ表面に強固に付着している高濃
度汚染、例えば、ＣＭＰ(Chemical Mechanical polishi
ng)後にウェハ表面に付着する研磨剤等を、ウェハを帯
電させずに除去することが可能になる。According to the brush scrub cleaning device of the present invention,
It is possible to completely remove the contamination attached to the brush when cleaning the highly-concentrated wafer, and to suppress the reverse contamination of the wafer to be cleaned by the contaminated brush. Further, due to the improved cleaning power, high-concentration contamination firmly attached to the wafer surface, which cannot be removed by the conventional brush scrub cleaning, such as CMP (Chemical Mechanical polishi).
After this, it becomes possible to remove the polishing agent or the like that adheres to the wafer surface without charging the wafer.
【図１】本発明によるブラシスクラブ洗浄装置の概略図
である。FIG. 1 is a schematic view of a brush scrub cleaning device according to the present invention.
【図２】従来の技術によるブラシスクラブ洗浄装置の概
略図である。FIG. 2 is a schematic view of a brush scrub cleaning device according to the related art.
１０１ ブラシ １０２ 超音波発振器 １０３ 製氷槽 １０４ ブラシアーム １０５ ブラシ回転機構 １０６ アース １０７ ウェハ １０８ ウェハステージ １０９ ノズル １１０ 融解槽 101 Brush 102 Ultrasonic Oscillator 103 Ice Making Tank 104 Brush Arm 105 Brush Rotating Mechanism 106 Earth 107 Wafer 108 Wafer Stage 109 Nozzle 110 Melting Tank
Claims (3)
ブラシを回転させながらウェハ表面を移動させて洗浄を
行う枚葉処理方式のブラシスクラブ洗浄装置に於いて、
前記ブラシを、アンモニア水，過酸化水素水，純水の混
合液、又は、界面活性剤，純水の混合液の氷で、各ウェ
ハの洗浄前に形成し、各ウェハを洗浄した後に融解して
使い捨てることを特徴とする、半導体ウェハの洗浄装
置。1. A pure water or a chemical liquid is discharged onto a wafer surface,
In the single-wafer processing brush scrub cleaning device that moves the wafer surface while rotating the brush to clean
The brush is formed with a mixed solution of ammonia water, hydrogen peroxide solution, and pure water or ice of a mixed solution of a surfactant and pure water before cleaning each wafer, and melts after cleaning each wafer. A cleaning device for semiconductor wafers, which is disposable.
超音波を直接印加して洗浄を行うことを特徴とする、請
求項１に記載の半導体ウェハの洗浄装置。2. The semiconductor wafer cleaning apparatus according to claim 1, wherein ultrasonic waves having a frequency of 1 to 2 MHz are directly applied to the brush to perform cleaning.
ハ表面を除電しながら洗浄を行うことを特徴とする、請
求項１又は請求項２に記載の半導体ウェハの洗浄装置。3. The semiconductor wafer cleaning apparatus according to claim 1, wherein the brush is grounded to clean the surface of the wafer while discharging electricity.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP18144495A JPH0936075A (en) | 1995-07-18 | 1995-07-18 | Semiconductor wafer cleaning equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP18144495A JPH0936075A (en) | 1995-07-18 | 1995-07-18 | Semiconductor wafer cleaning equipment |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0936075A true JPH0936075A (en) | 1997-02-07 |
Family
ID=16100883
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP18144495A Pending JPH0936075A (en) | 1995-07-18 | 1995-07-18 | Semiconductor wafer cleaning equipment |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0936075A (en) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6531401B2 (en) | 1999-09-02 | 2003-03-11 | Micron Technology, Inc. | Method of cleaning a substrate surface using a frozen material |
| KR100396829B1 (en) * | 2000-11-10 | 2003-09-02 | (주)케이.씨.텍 | Device for cleaning a brush of a brush type of substrate cleaning apparatus |
| JP2006247463A (en) * | 2005-03-08 | 2006-09-21 | Fujitsu Ltd | Substrate cleaning device |
| JP2006294988A (en) * | 2005-04-13 | 2006-10-26 | Tokyo Electron Ltd | Substrate cleaning method and substrate cleaning apparatus |
| US7267130B2 (en) | 2000-09-22 | 2007-09-11 | Dainippon Screen Mfg. Co., Ltd. | Substrate processing apparatus |
| US7479205B2 (en) | 2000-09-22 | 2009-01-20 | Dainippon Screen Mfg. Co., Ltd. | Substrate processing apparatus |
-
1995
- 1995-07-18 JP JP18144495A patent/JPH0936075A/en active Pending
Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6531401B2 (en) | 1999-09-02 | 2003-03-11 | Micron Technology, Inc. | Method of cleaning a substrate surface using a frozen material |
| US6537915B2 (en) | 1999-09-02 | 2003-03-25 | Micron Technology, Inc. | Methods of treating surfaces of substrates |
| US6559054B2 (en) | 1999-09-02 | 2003-05-06 | Micron Technology, Inc. | Methods of treating surfaces of substrates |
| US6734121B2 (en) * | 1999-09-02 | 2004-05-11 | Micron Technology, Inc. | Methods of treating surfaces of substrates |
| US7001845B2 (en) | 1999-09-02 | 2006-02-21 | Micron Technology, Inc. | Methods of treating surfaces of substrates |
| US7267130B2 (en) | 2000-09-22 | 2007-09-11 | Dainippon Screen Mfg. Co., Ltd. | Substrate processing apparatus |
| US7428907B2 (en) | 2000-09-22 | 2008-09-30 | Dainippon Screen Mfg. Co., Ltd. | Substrate processing apparatus |
| US7479205B2 (en) | 2000-09-22 | 2009-01-20 | Dainippon Screen Mfg. Co., Ltd. | Substrate processing apparatus |
| KR100396829B1 (en) * | 2000-11-10 | 2003-09-02 | (주)케이.씨.텍 | Device for cleaning a brush of a brush type of substrate cleaning apparatus |
| JP2006247463A (en) * | 2005-03-08 | 2006-09-21 | Fujitsu Ltd | Substrate cleaning device |
| JP2006294988A (en) * | 2005-04-13 | 2006-10-26 | Tokyo Electron Ltd | Substrate cleaning method and substrate cleaning apparatus |
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