JPH10326013A5 - - Google Patents

Claims (5)

A positive photoresist composition for exposure to far ultraviolet light, characterized by comprising a resin which contains, as repeating structural units, a monomer represented by the following general formula [I] and a monomer having an amine structure in the molecule, and which decomposes under the action of an acid to increase its solubility in alkali, and a compound which generates an acid when irradiated with actinic rays or radiation:
(In the formula, _R1 represents a hydrogen atom or a methyl group. _R2 represents an alkyl group, a cyclic alkyl group, or a substituted alkyl group. _R3 and _R4 may be the same or different and represent a hydrogen atom or an alkyl group, provided that at least one of _R3 and _R4 is a hydrogen atom. _R2 and _R3 or _R4 may be bonded to form a ring. A represents one group selected from a single bond, an alkylene group, a substituted alkylene group, an ether group, a thioether group, a carbonyl group, an ester group, an amide group, a sulfonamide group, a urethane group, and a urea group, or a group combining two or more of these groups.) 2. The positive photoresist composition for deep ultraviolet exposure according to claim 1, wherein the content of the repeating structural unit corresponding to the monomer having an amine structure in the molecule in the resin is 0.001 mol % to 10 mol % based on the total repeating units. 3. A positive photoresist composition for exposure to deep ultraviolet light according to claim 1, wherein the monomer having an amine structure in the molecule is a monomer represented by the following general formula [II]:
(In the formula, _R1 and A have the same meanings as defined in claim 1. _R5 and _R6 may be the same or different and represent an alkyl group or a substituted alkyl group, and _R5 and _R6 may be bonded to form a ring which may contain a heteroatom. _R7 and _R8 may be the same or different and represent a hydrogen atom, an alkyl group, or a substituted alkyl group.) 4. A positive photoresist composition for deep ultraviolet exposure according to claim 1, wherein the resin further comprises a repeating structural unit having an aliphatic cyclic hydrocarbon moiety in the molecule. 5. A method for forming a positive pattern, comprising forming a positive photoresist film from the positive photoresist composition for deep ultraviolet exposure according to claim 1, and then exposing and developing the positive photoresist film with deep ultraviolet light.