JPH1074901A - Ｐｚｔ薄膜メモリ及びその製造方法 - Google Patents

Ｐｚｔ薄膜メモリ及びその製造方法

Info

Publication number
JPH1074901A
JPH1074901A JP9141836A JP14183697A JPH1074901A JP H1074901 A JPH1074901 A JP H1074901A JP 9141836 A JP9141836 A JP 9141836A JP 14183697 A JP14183697 A JP 14183697A JP H1074901 A JPH1074901 A JP H1074901A
Authority
JP
Japan
Prior art keywords
thin film
pzt thin
electrode
substrate
pzt
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP9141836A
Other languages
English (en)
Japanese (ja)
Inventor
Shojun Kin
昌 ▲ジュン▼ 金
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Samsung Electronics Co Ltd
Original Assignee
Samsung Electronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Samsung Electronics Co Ltd filed Critical Samsung Electronics Co Ltd
Publication of JPH1074901A publication Critical patent/JPH1074901A/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/68—Capacitors having no potential barriers
    • H10D1/682—Capacitors having no potential barriers having dielectrics comprising perovskite structures

Landscapes

  • Semiconductor Memories (AREA)
  • Non-Volatile Memory (AREA)
JP9141836A 1996-05-30 1997-05-30 Ｐｚｔ薄膜メモリ及びその製造方法 Pending JPH1074901A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR1996P18741 1996-05-30
KR1019960018741A KR970077668A (ko) 1996-05-30 1996-05-30 Pzt 박막 메모리 및 그 제조 방법

Publications (1)

Publication Number Publication Date
JPH1074901A true JPH1074901A (ja) 1998-03-17

Family

ID=19460175

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9141836A Pending JPH1074901A (ja) 1996-05-30 1997-05-30 Ｐｚｔ薄膜メモリ及びその製造方法

Country Status (2)

Country Link
JP (1) JPH1074901A (ko)
KR (1) KR970077668A (ko)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6329928B1 (en) * 1998-12-21 2001-12-11 General Electric Company Magnetic induction meter intra-building communication system
US6333202B1 (en) * 1999-08-26 2001-12-25 International Business Machines Corporation Flip FERAM cell and method to form same

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6329928B1 (en) * 1998-12-21 2001-12-11 General Electric Company Magnetic induction meter intra-building communication system
US6333202B1 (en) * 1999-08-26 2001-12-25 International Business Machines Corporation Flip FERAM cell and method to form same

Also Published As

Publication number Publication date
KR970077668A (ko) 1997-12-12

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