JPH11111601A5 - Exposure method and apparatus, and mask - Google Patents
Exposure method and apparatus, and maskInfo
- Publication number
- JPH11111601A5 JPH11111601A5 JP1997272566A JP27256697A JPH11111601A5 JP H11111601 A5 JPH11111601 A5 JP H11111601A5 JP 1997272566 A JP1997272566 A JP 1997272566A JP 27256697 A JP27256697 A JP 27256697A JP H11111601 A5 JPH11111601 A5 JP H11111601A5
- Authority
- JP
- Japan
- Prior art keywords
- mask
- substrate
- exposure
- mask pattern
- pattern
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Description
更に本発明は、そのような露光方法を使用できる露光装置及びマスクを提供することをも目的とする。 Another object of the present invention is to provide an exposure apparatus and a mask that can be used in such an exposure method.
また、本発明による露光装置は、スリット状の照明領域でマスク（Ｒ）のパターンを照明し、そのマスクのパターンがその照明領域の走査方向に複数配置され、そのマスクと基板（Ｗ）とを同期走査させることによってそのマスクのパターン像をその基板の同一レジスト上に投影する露光装置であって、そのマスクとその基板とをその走査方向に同期走査して露光を行う際に、そのスリット状の照明領域が次のパターン領域に移動するのに応じて露光条件を変化させる露光条件制御系（１１，１２，４１，４３）を設けたものである。斯かる露光装置によれば、本発明の第１及び第２の露光方法が使用できる。
また、本発明によるマスクは、露光対象の基板の同一レジスト上の複数の被露光領域（４６Ｂ〜４６Ｇ）にそれぞれ異なるＮ個（Ｎは２以上の整数）のマスクパターンの像を重ねて露光する露光方法であり、且つ、この基板上にこのＮ個のマスクパターンの像（Ａ１，Ｂ１）を露光する第１工程と、この第１工程の後にこの基板とこのマスクパターンとを所定方向に所定幅だけ相対移動してその基板上にそのＮ個のマスクパターンの像（Ａ２，Ｂ２）を部分的に重ね合わせて露光する第２工程とを有し、この第２工程を少なくとも（Ｎ−２）回繰り返す露光方法に適用されるマスクであって、そのマスク上には、その所定方向にそれぞれその所定幅を持つそのＮ個のマスクパターン（４５Ａ，４５Ｂ）が、この所定方向に一列に配列されているものである。
このマスクを用いることによって、本発明の第１の露光方法を実施できる。
The exposure apparatus according to the present invention is an exposure apparatus that illuminates a mask (R) pattern with a slit-shaped illumination area, arranges a plurality of mask patterns in the scanning direction of the illumination area, and projects the mask pattern image onto the same resist of the substrate by synchronously scanning the mask and substrate (W), and is provided with an exposure condition control system (11, 12, 41, 43) that changes the exposure conditions as the slit-shaped illumination area moves to the next pattern area when exposure is performed by synchronously scanning the mask and substrate in the scanning direction. With such an exposure apparatus, the first and second exposure methods of the present invention can be used.
Furthermore, the mask according to the present invention is a mask applicable to an exposure method in which N (N is an integer of 2 or more) different mask pattern images are superimposed and exposed in a plurality of exposed regions (46B to 46G) on the same resist of a substrate to be exposed, and which comprises a first step of exposing the N mask pattern images (A1, B1) onto the substrate, and a second step of, after the first step, moving the substrate and the mask pattern relatively by a predetermined width in a predetermined direction to expose the N mask pattern images (A2, B2) on the substrate in a partially superimposed state, and which repeats the second step at least (N-2) times, and on the mask, the N mask patterns (45A, 45B), each having a predetermined width in the predetermined direction, are arranged in a row in the predetermined direction.
By using this mask, the first exposure method of the present invention can be carried out.
また、本発明の第２の露光方法によれば、１枚のマスク上に複数個のマスクパターンが形成されているため、マスクの製造コストや管理コストを低減できる。更に、マスクパターン毎に露光条件を最適化して多重露光を行うことができるため、高い結像特性が得られる利点がある。更に、本発明の露光装置によれば、本発明の露光方法が使用できる。また、本発明のマスクを用いることによって、本発明の第１の露光方法を実施できる。 Furthermore, according to the second exposure method of the present invention, since multiple mask patterns are formed on a single mask, the manufacturing and management costs of the mask can be reduced. Furthermore, since multiple exposure can be performed by optimizing the exposure conditions for each mask pattern, there is the advantage that high imaging characteristics can be obtained. Furthermore, the exposure method of the present invention can be used with the exposure apparatus of the present invention. Furthermore, the first exposure method of the present invention can be implemented by using the mask of the present invention.
Claims (5)
マスク上で所定方向に一列に配置された前記Ｎ個のマスクパターン領域を形成しておき、
前記基板上に前記マスク上の前記Ｎ個のマスクパターンの像を露光する第１工程と、
前記基板と前記マスクとを前記マスクパターン領域の前記所定方向の幅に対応する幅だけ前記所定方向に相対移動して、前記基板上に前記マスク上の前記Ｎ個のマスクパターンの像を部分的に重ね合わせて露光する第２工程と、を有し、
前記第２工程を更に少なくとも（Ｎ−２）回繰り返すことを特徴とする露光方法。 An exposure method in which N (N is an integer of 2 or more) different mask pattern images are superimposed and exposed to a plurality of exposed regions on the same resist of a substrate to be exposed,
The N mask pattern regions are formed on a mask and arranged in a line in a predetermined direction;
a first step of exposing images of the N mask patterns on the mask onto the substrate;
a second step of relatively moving the substrate and the mask in the predetermined direction by a width corresponding to a width of the mask pattern region in the predetermined direction, thereby exposing the substrate so that images of the N mask patterns on the mask are partially superimposed on each other;
An exposure method characterized in that the second step is further repeated at least (N-2) times.
前記マスク上での前記Ｎ個のマスクパターン領域の配列方向と前記同期走査の走査方向とを平行に設置し、
該マスクパターン毎に露光条件を変化させることを特徴とする請求項１記載の露光方法。 When exposing the images of the N mask patterns onto the substrate, the mask and the substrate are synchronously scanned with respect to an illumination light beam that illuminates the mask patterns;
The arrangement direction of the N mask pattern areas on the mask is set parallel to the scanning direction of the synchronous scanning;
2. An exposure method according to claim 1, wherein the exposure conditions are changed for each of said mask patterns.
前記マスクのパターン毎に露光条件を変化させて露光することを特徴とする露光方法。 1. An exposure method in which a mask pattern is illuminated with a slit-shaped illumination area, a plurality of mask patterns are arranged in a scanning direction of the illumination area, and an image of the mask pattern is projected onto the same resist of the substrate by synchronously scanning the mask and the substrate,
an exposure method characterized in that exposure is performed by changing exposure conditions for each pattern of the mask;
前記マスクと前記基板とを前記走査方向に同期走査して露光を行う際に、前記スリット状の照明領域が次のパターン領域に移動するのに応じて露光条件を変化させる露光条件制御系を設けたことを特徴とする露光装置。 An exposure apparatus that illuminates a mask pattern with a slit-shaped illumination area, a plurality of mask patterns are arranged in a scanning direction of the illumination area, and projects an image of the mask pattern onto the same resist of the substrate by synchronously scanning the mask and a substrate,
an exposure apparatus characterized by providing an exposure condition control system that changes the exposure conditions as the slit-shaped illumination area moves to the next pattern area when exposure is performed by synchronously scanning the mask and the substrate in the scanning direction.
前記マスク上には、前記所定方向にそれぞれ前記所定幅を持つ前記Ｎ個のマスクパターンが、該所定方向に一列に配列されていることを特徴とするマスク。A mask characterized in that the N mask patterns, each having the predetermined width in the predetermined direction, are arranged in a line on the mask in the predetermined direction.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9272566A JPH11111601A (en) | 1997-10-06 | 1997-10-06 | Exposure method and apparatus |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9272566A JPH11111601A (en) | 1997-10-06 | 1997-10-06 | Exposure method and apparatus |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH11111601A JPH11111601A (en) | 1999-04-23 |
| JPH11111601A5 true JPH11111601A5 (en) | 2005-06-23 |
Family
ID=17515700
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP9272566A Pending JPH11111601A (en) | 1997-10-06 | 1997-10-06 | Exposure method and apparatus |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH11111601A (en) |
Families Citing this family (26)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2001230186A (en) | 2000-02-17 | 2001-08-24 | Hitachi Ltd | Method for manufacturing semiconductor integrated circuit device |
| US6787271B2 (en) | 2000-07-05 | 2004-09-07 | Numerical Technologies, Inc. | Design and layout of phase shifting photolithographic masks |
| JP4586954B2 (en) * | 2003-04-04 | 2010-11-24 | 株式会社ニコン | Exposure apparatus, exposure method, and device manufacturing method |
| KR20170018113A (en) | 2003-04-09 | 2017-02-15 | 가부시키가이샤 니콘 | Exposure method and apparatus, and device manufacturing method |
| TW201834020A (en) | 2003-10-28 | 2018-09-16 | 日商尼康股份有限公司 | Illumination optical device, exposure device, exposure method, and component manufacturing method |
| TW201809801A (en) | 2003-11-20 | 2018-03-16 | 日商尼康股份有限公司 | Optical illumination device, exposure device, exposure method, and component manufacturing method |
| TWI389174B (en) | 2004-02-06 | 2013-03-11 | 尼康股份有限公司 | Polarization changing device, optical illumination apparatus, light-exposure apparatus and light-exposure method |
| EP2660854B1 (en) | 2005-05-12 | 2017-06-21 | Nikon Corporation | Projection optical system, exposure apparatus and exposure method |
| US7382438B2 (en) * | 2005-08-23 | 2008-06-03 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| KR100687883B1 (en) * | 2005-09-03 | 2007-02-27 | 주식회사 하이닉스반도체 | Double exposure photomask and double exposure method using the same |
| KR20080108226A (en) | 2006-03-03 | 2008-12-12 | 가부시키가이샤 니콘 | Exposure method and apparatus, and device manufacturing method |
| US8023103B2 (en) | 2006-03-03 | 2011-09-20 | Nikon Corporation | Exposure apparatus, exposure method, and method for producing device |
| US7884921B2 (en) | 2006-04-12 | 2011-02-08 | Nikon Corporation | Illumination optical apparatus, projection exposure apparatus, projection optical system, and device manufacturing method |
| JP4784746B2 (en) * | 2006-04-12 | 2011-10-05 | 株式会社ニコン | Illumination optical apparatus, projection exposure apparatus, projection optical system, and device manufacturing method |
| EP2009678A4 (en) | 2006-04-17 | 2011-04-06 | Nikon Corp | LIGHTING OPTICAL APPARATUS, EXPOSURE APPARATUS, AND DEVICE MANUFACTURING METHOD |
| JPWO2008001593A1 (en) * | 2006-06-30 | 2009-11-26 | 株式会社ニコン | Exposure method, exposure apparatus, and device manufacturing method |
| JP5105316B2 (en) | 2006-07-07 | 2012-12-26 | 株式会社ニコン | Illumination optical apparatus, exposure apparatus, and device manufacturing method |
| JP5267029B2 (en) | 2007-10-12 | 2013-08-21 | 株式会社ニコン | Illumination optical apparatus, exposure apparatus, and device manufacturing method |
| US8379187B2 (en) | 2007-10-24 | 2013-02-19 | Nikon Corporation | Optical unit, illumination optical apparatus, exposure apparatus, and device manufacturing method |
| US9116346B2 (en) | 2007-11-06 | 2015-08-25 | Nikon Corporation | Illumination apparatus, illumination method, exposure apparatus, and device manufacturing method |
| JP2008172249A (en) * | 2008-01-15 | 2008-07-24 | Renesas Technology Corp | Method for manufacturing semiconductor integrated circuit device |
| JP5382412B2 (en) * | 2008-10-24 | 2014-01-08 | 株式会社ブイ・テクノロジー | Exposure apparatus and photomask |
| JP5644290B2 (en) * | 2010-09-08 | 2014-12-24 | 凸版印刷株式会社 | Photomask manufacturing method |
| US9581910B2 (en) | 2013-01-17 | 2017-02-28 | Carl Zeiss Smt Gmbh | Method of lithographically transferring a pattern on a light sensitive surface and illumination system of a microlithographic projection exposure apparatus |
| WO2014111098A1 (en) * | 2013-01-17 | 2014-07-24 | Carl Zeiss Smt Gmbh | Method of lithographically transferring a pattern on a light sensitive surface and illumination system of a microlithographic projection exposure apparatus |
| JP7443134B2 (en) * | 2020-04-02 | 2024-03-05 | 三光機械株式会社 | Filling chute of filling packaging equipment |
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1997
- 1997-10-06 JP JP9272566A patent/JPH11111601A/en active Pending
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