JPH1124257A - Photosensitive polyimide precursor composition and pattern forming method by using same - Google Patents
Photosensitive polyimide precursor composition and pattern forming method by using sameInfo
- Publication number
- JPH1124257A JPH1124257A JP18019097A JP18019097A JPH1124257A JP H1124257 A JPH1124257 A JP H1124257A JP 18019097 A JP18019097 A JP 18019097A JP 18019097 A JP18019097 A JP 18019097A JP H1124257 A JPH1124257 A JP H1124257A
- Authority
- JP
- Japan
- Prior art keywords
- group
- polyimide precursor
- photosensitive
- photosensitive polyimide
- pattern
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 229920001721 polyimide Polymers 0.000 title claims abstract description 69
- 239000004642 Polyimide Substances 0.000 title claims abstract description 60
- 239000002243 precursor Substances 0.000 title claims abstract description 50
- 239000000203 mixture Substances 0.000 title claims abstract description 34
- 238000000034 method Methods 0.000 title abstract description 13
- -1 titanocene compound Chemical class 0.000 claims abstract description 29
- 125000000962 organic group Chemical group 0.000 claims abstract description 28
- 150000001875 compounds Chemical class 0.000 claims abstract description 19
- 238000010521 absorption reaction Methods 0.000 claims abstract description 7
- 125000004435 hydrogen atom Chemical group [H]* 0.000 claims abstract description 5
- 238000004519 manufacturing process Methods 0.000 claims description 6
- 238000009835 boiling Methods 0.000 claims description 5
- 239000011342 resin composition Substances 0.000 claims description 4
- 238000003860 storage Methods 0.000 abstract description 9
- 230000001678 irradiating effect Effects 0.000 abstract description 3
- 239000010408 film Substances 0.000 description 42
- NIXOWILDQLNWCW-UHFFFAOYSA-M Acrylate Chemical compound [O-]C(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-M 0.000 description 21
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 description 14
- SECXISVLQFMRJM-UHFFFAOYSA-N N-Methylpyrrolidone Chemical compound CN1CCCC1=O SECXISVLQFMRJM-UHFFFAOYSA-N 0.000 description 10
- 150000004985 diamines Chemical class 0.000 description 10
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 9
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 9
- 230000035945 sensitivity Effects 0.000 description 9
- 229910052719 titanium Inorganic materials 0.000 description 9
- 239000010936 titanium Substances 0.000 description 9
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 8
- DNIAPMSPPWPWGF-UHFFFAOYSA-N Propylene glycol Chemical compound CC(O)CO DNIAPMSPPWPWGF-UHFFFAOYSA-N 0.000 description 8
- 125000000058 cyclopentadienyl group Chemical group C1(=CC=CC1)* 0.000 description 8
- ZSWFCLXCOIISFI-UHFFFAOYSA-N endo-cyclopentadiene Natural products C1C=CC=C1 ZSWFCLXCOIISFI-UHFFFAOYSA-N 0.000 description 8
- 229920005575 poly(amic acid) Polymers 0.000 description 8
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 7
- ATUOYWHBWRKTHZ-UHFFFAOYSA-N Propane Chemical compound CCC ATUOYWHBWRKTHZ-UHFFFAOYSA-N 0.000 description 7
- 125000004432 carbon atom Chemical group C* 0.000 description 7
- 239000011248 coating agent Substances 0.000 description 7
- 238000000576 coating method Methods 0.000 description 7
- 229910052757 nitrogen Inorganic materials 0.000 description 7
- 238000002161 passivation Methods 0.000 description 7
- 239000000243 solution Substances 0.000 description 7
- 239000002904 solvent Substances 0.000 description 7
- ZMXDDKWLCZADIW-UHFFFAOYSA-N N,N-Dimethylformamide Chemical compound CN(C)C=O ZMXDDKWLCZADIW-UHFFFAOYSA-N 0.000 description 6
- 238000010438 heat treatment Methods 0.000 description 6
- 239000004065 semiconductor Substances 0.000 description 6
- 150000000000 tetracarboxylic acids Chemical group 0.000 description 6
- GOLORTLGFDVFDW-UHFFFAOYSA-N 3-(1h-benzimidazol-2-yl)-7-(diethylamino)chromen-2-one Chemical compound C1=CC=C2NC(C3=CC4=CC=C(C=C4OC3=O)N(CC)CC)=NC2=C1 GOLORTLGFDVFDW-UHFFFAOYSA-N 0.000 description 5
- GTDPSWPPOUPBNX-UHFFFAOYSA-N ac1mqpva Chemical compound CC12C(=O)OC(=O)C1(C)C1(C)C2(C)C(=O)OC1=O GTDPSWPPOUPBNX-UHFFFAOYSA-N 0.000 description 5
- 125000003118 aryl group Chemical group 0.000 description 5
- 239000001294 propane Substances 0.000 description 5
- 239000000758 substrate Substances 0.000 description 5
- 125000006158 tetracarboxylic acid group Chemical group 0.000 description 5
- 239000002253 acid Substances 0.000 description 4
- 125000000217 alkyl group Chemical group 0.000 description 4
- 238000001035 drying Methods 0.000 description 4
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 description 4
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 4
- 229960004063 propylene glycol Drugs 0.000 description 4
- 229940124530 sulfonamide Drugs 0.000 description 4
- 239000002966 varnish Substances 0.000 description 4
- ZWEHNKRNPOVVGH-UHFFFAOYSA-N 2-Butanone Chemical compound CCC(C)=O ZWEHNKRNPOVVGH-UHFFFAOYSA-N 0.000 description 3
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 3
- HEDRZPFGACZZDS-UHFFFAOYSA-N Chloroform Chemical compound ClC(Cl)Cl HEDRZPFGACZZDS-UHFFFAOYSA-N 0.000 description 3
- FOQABOMYTOFLPZ-ISLYRVAYSA-N Disperse Red 1 Chemical compound C1=CC(N(CCO)CC)=CC=C1\N=N\C1=CC=C([N+]([O-])=O)C=C1 FOQABOMYTOFLPZ-ISLYRVAYSA-N 0.000 description 3
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 description 3
- LRHPLDYGYMQRHN-UHFFFAOYSA-N N-Butanol Chemical compound CCCCO LRHPLDYGYMQRHN-UHFFFAOYSA-N 0.000 description 3
- 206010034972 Photosensitivity reaction Diseases 0.000 description 3
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 3
- 150000001412 amines Chemical class 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- BTANRVKWQNVYAZ-UHFFFAOYSA-N butan-2-ol Chemical compound CCC(C)O BTANRVKWQNVYAZ-UHFFFAOYSA-N 0.000 description 3
- 125000004427 diamine group Chemical group 0.000 description 3
- 150000002148 esters Chemical class 0.000 description 3
- 150000002430 hydrocarbons Chemical group 0.000 description 3
- 239000011229 interlayer Substances 0.000 description 3
- 239000007788 liquid Substances 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 230000036211 photosensitivity Effects 0.000 description 3
- BDERNNFJNOPAEC-UHFFFAOYSA-N propan-1-ol Chemical compound CCCO BDERNNFJNOPAEC-UHFFFAOYSA-N 0.000 description 3
- 230000001681 protective effect Effects 0.000 description 3
- 239000011347 resin Substances 0.000 description 3
- 229920005989 resin Polymers 0.000 description 3
- 239000007787 solid Substances 0.000 description 3
- 238000003786 synthesis reaction Methods 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- MYRTYDVEIRVNKP-UHFFFAOYSA-N 1,2-Divinylbenzene Chemical compound C=CC1=CC=CC=C1C=C MYRTYDVEIRVNKP-UHFFFAOYSA-N 0.000 description 2
- UFQHFMGRRVQFNA-UHFFFAOYSA-N 3-(dimethylamino)propyl prop-2-enoate Chemical compound CN(C)CCCOC(=O)C=C UFQHFMGRRVQFNA-UHFFFAOYSA-N 0.000 description 2
- VVBLNCFGVYUYGU-UHFFFAOYSA-N 4,4'-Bis(dimethylamino)benzophenone Chemical compound C1=CC(N(C)C)=CC=C1C(=O)C1=CC=C(N(C)C)C=C1 VVBLNCFGVYUYGU-UHFFFAOYSA-N 0.000 description 2
- YEJRWHAVMIAJKC-UHFFFAOYSA-N 4-Butyrolactone Chemical compound O=C1CCCO1 YEJRWHAVMIAJKC-UHFFFAOYSA-N 0.000 description 2
- KWOLFJPFCHCOCG-UHFFFAOYSA-N Acetophenone Chemical compound CC(=O)C1=CC=CC=C1 KWOLFJPFCHCOCG-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- IAZDPXIOMUYVGZ-UHFFFAOYSA-N Dimethylsulphoxide Chemical compound CS(C)=O IAZDPXIOMUYVGZ-UHFFFAOYSA-N 0.000 description 2
- GUUVPOWQJOLRAS-UHFFFAOYSA-N Diphenyl disulfide Chemical compound C=1C=CC=CC=1SSC1=CC=CC=C1 GUUVPOWQJOLRAS-UHFFFAOYSA-N 0.000 description 2
- DHMQDGOQFOQNFH-UHFFFAOYSA-N Glycine Chemical compound NCC(O)=O DHMQDGOQFOQNFH-UHFFFAOYSA-N 0.000 description 2
- FXHOOIRPVKKKFG-UHFFFAOYSA-N N,N-Dimethylacetamide Chemical compound CN(C)C(C)=O FXHOOIRPVKKKFG-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- PPBRXRYQALVLMV-UHFFFAOYSA-N Styrene Chemical compound C=CC1=CC=CC=C1 PPBRXRYQALVLMV-UHFFFAOYSA-N 0.000 description 2
- WYURNTSHIVDZCO-UHFFFAOYSA-N Tetrahydrofuran Chemical compound C1CCOC1 WYURNTSHIVDZCO-UHFFFAOYSA-N 0.000 description 2
- ZJCCRDAZUWHFQH-UHFFFAOYSA-N Trimethylolpropane Chemical compound CCC(CO)(CO)CO ZJCCRDAZUWHFQH-UHFFFAOYSA-N 0.000 description 2
- 238000000862 absorption spectrum Methods 0.000 description 2
- 239000000654 additive Substances 0.000 description 2
- 125000003545 alkoxy group Chemical group 0.000 description 2
- 125000002947 alkylene group Chemical group 0.000 description 2
- 125000003277 amino group Chemical group 0.000 description 2
- 239000007864 aqueous solution Substances 0.000 description 2
- 125000000732 arylene group Chemical group 0.000 description 2
- ZYGHJZDHTFUPRJ-UHFFFAOYSA-N benzo-alpha-pyrone Natural products C1=CC=C2OC(=O)C=CC2=C1 ZYGHJZDHTFUPRJ-UHFFFAOYSA-N 0.000 description 2
- RWCCWEUUXYIKHB-UHFFFAOYSA-N benzophenone Chemical compound C=1C=CC=CC=1C(=O)C1=CC=CC=C1 RWCCWEUUXYIKHB-UHFFFAOYSA-N 0.000 description 2
- 239000012965 benzophenone Substances 0.000 description 2
- WERYXYBDKMZEQL-UHFFFAOYSA-N butane-1,4-diol Chemical compound OCCCCO WERYXYBDKMZEQL-UHFFFAOYSA-N 0.000 description 2
- 239000003795 chemical substances by application Substances 0.000 description 2
- 229960000956 coumarin Drugs 0.000 description 2
- 235000001671 coumarin Nutrition 0.000 description 2
- 150000004775 coumarins Chemical class 0.000 description 2
- 238000001723 curing Methods 0.000 description 2
- BGTOWKSIORTVQH-UHFFFAOYSA-N cyclopentanone Chemical compound O=C1CCCC1 BGTOWKSIORTVQH-UHFFFAOYSA-N 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005227 gel permeation chromatography Methods 0.000 description 2
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 2
- 150000003949 imides Chemical group 0.000 description 2
- 125000001449 isopropyl group Chemical group [H]C([H])([H])C([H])(*)C([H])([H])[H] 0.000 description 2
- 238000002156 mixing Methods 0.000 description 2
- WDQKICIMIPUDBL-UHFFFAOYSA-N n-[2-(dimethylamino)ethyl]prop-2-enamide Chemical compound CN(C)CCNC(=O)C=C WDQKICIMIPUDBL-UHFFFAOYSA-N 0.000 description 2
- 239000003960 organic solvent Substances 0.000 description 2
- WXZMFSXDPGVJKK-UHFFFAOYSA-N pentaerythritol Chemical compound OCC(CO)(CO)CO WXZMFSXDPGVJKK-UHFFFAOYSA-N 0.000 description 2
- FDPIMTJIUBPUKL-UHFFFAOYSA-N pentan-3-one Chemical compound CCC(=O)CC FDPIMTJIUBPUKL-UHFFFAOYSA-N 0.000 description 2
- 239000009719 polyimide resin Substances 0.000 description 2
- WQGWDDDVZFFDIG-UHFFFAOYSA-N pyrogallol Chemical compound OC1=CC=CC(O)=C1O WQGWDDDVZFFDIG-UHFFFAOYSA-N 0.000 description 2
- CYIDZMCFTVVTJO-UHFFFAOYSA-N pyromellitic acid Chemical compound OC(=O)C1=CC(C(O)=O)=C(C(O)=O)C=C1C(O)=O CYIDZMCFTVVTJO-UHFFFAOYSA-N 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 238000004528 spin coating Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 description 2
- FYSNRJHAOHDILO-UHFFFAOYSA-N thionyl chloride Chemical compound ClS(Cl)=O FYSNRJHAOHDILO-UHFFFAOYSA-N 0.000 description 2
- JJRVRELEASDUMY-JXMROGBWSA-N (5e)-5-[[4-(dimethylamino)phenyl]methylidene]-2-sulfanylidene-1,3-thiazolidin-4-one Chemical compound C1=CC(N(C)C)=CC=C1\C=C\1C(=O)NC(=S)S/1 JJRVRELEASDUMY-JXMROGBWSA-N 0.000 description 1
- PVPBBTJXIKFICP-UHFFFAOYSA-N (7-aminophenothiazin-3-ylidene)azanium;chloride Chemical compound [Cl-].C1=CC(=[NH2+])C=C2SC3=CC(N)=CC=C3N=C21 PVPBBTJXIKFICP-UHFFFAOYSA-N 0.000 description 1
- YTLYLLTVENPWFT-UPHRSURJSA-N (Z)-3-aminoacrylic acid Chemical compound N\C=C/C(O)=O YTLYLLTVENPWFT-UPHRSURJSA-N 0.000 description 1
- KUQNCHZOCSYKOR-UHFFFAOYSA-N 1,1-dioxospiro[2,1$l^{6}-benzoxathiole-3,9'-xanthene]-3',4',5',6'-tetrol Chemical compound O1S(=O)(=O)C2=CC=CC=C2C21C1=CC=C(O)C(O)=C1OC1=C(O)C(O)=CC=C21 KUQNCHZOCSYKOR-UHFFFAOYSA-N 0.000 description 1
- MSAHTMIQULFMRG-UHFFFAOYSA-N 1,2-diphenyl-2-propan-2-yloxyethanone Chemical compound C=1C=CC=CC=1C(OC(C)C)C(=O)C1=CC=CC=C1 MSAHTMIQULFMRG-UHFFFAOYSA-N 0.000 description 1
- CYSGHNMQYZDMIA-UHFFFAOYSA-N 1,3-Dimethyl-2-imidazolidinon Chemical compound CN1CCN(C)C1=O CYSGHNMQYZDMIA-UHFFFAOYSA-N 0.000 description 1
- WZCQRUWWHSTZEM-UHFFFAOYSA-N 1,3-phenylenediamine Chemical compound NC1=CC=CC(N)=C1 WZCQRUWWHSTZEM-UHFFFAOYSA-N 0.000 description 1
- RYHBNJHYFVUHQT-UHFFFAOYSA-N 1,4-Dioxane Chemical compound C1COCCO1 RYHBNJHYFVUHQT-UHFFFAOYSA-N 0.000 description 1
- CBCKQZAAMUWICA-UHFFFAOYSA-N 1,4-phenylenediamine Chemical compound NC1=CC=C(N)C=C1 CBCKQZAAMUWICA-UHFFFAOYSA-N 0.000 description 1
- YLHUPYSUKYAIBW-UHFFFAOYSA-N 1-acetylpyrrolidin-2-one Chemical compound CC(=O)N1CCCC1=O YLHUPYSUKYAIBW-UHFFFAOYSA-N 0.000 description 1
- LVUQCTGSDJLWCE-UHFFFAOYSA-N 1-benzylpyrrolidin-2-one Chemical compound O=C1CCCN1CC1=CC=CC=C1 LVUQCTGSDJLWCE-UHFFFAOYSA-N 0.000 description 1
- 239000012956 1-hydroxycyclohexylphenyl-ketone Substances 0.000 description 1
- 125000001462 1-pyrrolyl group Chemical group [*]N1C([H])=C([H])C([H])=C1[H] 0.000 description 1
- ZVDSMYGTJDFNHN-UHFFFAOYSA-N 2,4,6-trimethylbenzene-1,3-diamine Chemical group CC1=CC(C)=C(N)C(C)=C1N ZVDSMYGTJDFNHN-UHFFFAOYSA-N 0.000 description 1
- OJSPYCPPVCMEBS-UHFFFAOYSA-N 2,8-dimethyl-5,5-dioxodibenzothiophene-3,7-diamine Chemical compound C12=CC(C)=C(N)C=C2S(=O)(=O)C2=C1C=C(C)C(N)=C2 OJSPYCPPVCMEBS-UHFFFAOYSA-N 0.000 description 1
- KJRQMXRCZULRHF-UHFFFAOYSA-N 2-(4-cyanoanilino)acetic acid Chemical compound OC(=O)CNC1=CC=C(C#N)C=C1 KJRQMXRCZULRHF-UHFFFAOYSA-N 0.000 description 1
- SJIXRGNQPBQWMK-UHFFFAOYSA-N 2-(diethylamino)ethyl 2-methylprop-2-enoate Chemical compound CCN(CC)CCOC(=O)C(C)=C SJIXRGNQPBQWMK-UHFFFAOYSA-N 0.000 description 1
- JKNCOURZONDCGV-UHFFFAOYSA-N 2-(dimethylamino)ethyl 2-methylprop-2-enoate Chemical compound CN(C)CCOC(=O)C(C)=C JKNCOURZONDCGV-UHFFFAOYSA-N 0.000 description 1
- DPBJAVGHACCNRL-UHFFFAOYSA-N 2-(dimethylamino)ethyl prop-2-enoate Chemical compound CN(C)CCOC(=O)C=C DPBJAVGHACCNRL-UHFFFAOYSA-N 0.000 description 1
- XNWFRZJHXBZDAG-UHFFFAOYSA-N 2-METHOXYETHANOL Chemical compound COCCO XNWFRZJHXBZDAG-UHFFFAOYSA-N 0.000 description 1
- NGNBDVOYPDDBFK-UHFFFAOYSA-N 2-[2,4-di(pentan-2-yl)phenoxy]acetyl chloride Chemical compound CCCC(C)C1=CC=C(OCC(Cl)=O)C(C(C)CCC)=C1 NGNBDVOYPDDBFK-UHFFFAOYSA-N 0.000 description 1
- FEJPWLNPOFOBSP-UHFFFAOYSA-N 2-[4-[(2-chloro-4-nitrophenyl)diazenyl]-n-ethylanilino]ethanol Chemical compound C1=CC(N(CCO)CC)=CC=C1N=NC1=CC=C([N+]([O-])=O)C=C1Cl FEJPWLNPOFOBSP-UHFFFAOYSA-N 0.000 description 1
- TXBCBTDQIULDIA-UHFFFAOYSA-N 2-[[3-hydroxy-2,2-bis(hydroxymethyl)propoxy]methyl]-2-(hydroxymethyl)propane-1,3-diol Chemical compound OCC(CO)(CO)COCC(CO)(CO)CO TXBCBTDQIULDIA-UHFFFAOYSA-N 0.000 description 1
- OJPDDQSCZGTACX-UHFFFAOYSA-N 2-[n-(2-hydroxyethyl)anilino]ethanol Chemical compound OCCN(CCO)C1=CC=CC=C1 OJPDDQSCZGTACX-UHFFFAOYSA-N 0.000 description 1
- KMNCBSZOIQAUFX-UHFFFAOYSA-N 2-ethoxy-1,2-diphenylethanone Chemical compound C=1C=CC=CC=1C(OCC)C(=O)C1=CC=CC=C1 KMNCBSZOIQAUFX-UHFFFAOYSA-N 0.000 description 1
- SJEBAWHUJDUKQK-UHFFFAOYSA-N 2-ethylanthraquinone Chemical compound C1=CC=C2C(=O)C3=CC(CC)=CC=C3C(=O)C2=C1 SJEBAWHUJDUKQK-UHFFFAOYSA-N 0.000 description 1
- 125000000954 2-hydroxyethyl group Chemical group [H]C([*])([H])C([H])([H])O[H] 0.000 description 1
- GWZMWHWAWHPNHN-UHFFFAOYSA-N 2-hydroxypropyl prop-2-enoate Chemical compound CC(O)COC(=O)C=C GWZMWHWAWHPNHN-UHFFFAOYSA-N 0.000 description 1
- BQZJOQXSCSZQPS-UHFFFAOYSA-N 2-methoxy-1,2-diphenylethanone Chemical compound C=1C=CC=CC=1C(OC)C(=O)C1=CC=CC=C1 BQZJOQXSCSZQPS-UHFFFAOYSA-N 0.000 description 1
- LWRBVKNFOYUCNP-UHFFFAOYSA-N 2-methyl-1-(4-methylsulfanylphenyl)-2-morpholin-4-ylpropan-1-one Chemical compound C1=CC(SC)=CC=C1C(=O)C(C)(C)N1CCOCC1 LWRBVKNFOYUCNP-UHFFFAOYSA-N 0.000 description 1
- IXPWKHNDQICVPZ-UHFFFAOYSA-N 2-methylhex-1-en-3-yne Chemical compound CCC#CC(C)=C IXPWKHNDQICVPZ-UHFFFAOYSA-N 0.000 description 1
- KTALPKYXQZGAEG-UHFFFAOYSA-N 2-propan-2-ylthioxanthen-9-one Chemical compound C1=CC=C2C(=O)C3=CC(C(C)C)=CC=C3SC2=C1 KTALPKYXQZGAEG-UHFFFAOYSA-N 0.000 description 1
- YTPSFXZMJKMUJE-UHFFFAOYSA-N 2-tert-butylanthracene-9,10-dione Chemical compound C1=CC=C2C(=O)C3=CC(C(C)(C)C)=CC=C3C(=O)C2=C1 YTPSFXZMJKMUJE-UHFFFAOYSA-N 0.000 description 1
- NUIURNJTPRWVAP-UHFFFAOYSA-N 3,3'-Dimethylbenzidine Chemical compound C1=C(N)C(C)=CC(C=2C=C(C)C(N)=CC=2)=C1 NUIURNJTPRWVAP-UHFFFAOYSA-N 0.000 description 1
- SMDGQEQWSSYZKX-UHFFFAOYSA-N 3-(2,3-dicarboxyphenoxy)phthalic acid Chemical compound OC(=O)C1=CC=CC(OC=2C(=C(C(O)=O)C=CC=2)C(O)=O)=C1C(O)=O SMDGQEQWSSYZKX-UHFFFAOYSA-N 0.000 description 1
- FMXFZZAJHRLHGP-UHFFFAOYSA-N 3-(2,3-dicarboxyphenyl)sulfonylphthalic acid Chemical compound OC(=O)C1=CC=CC(S(=O)(=O)C=2C(=C(C(O)=O)C=CC=2)C(O)=O)=C1C(O)=O FMXFZZAJHRLHGP-UHFFFAOYSA-N 0.000 description 1
- PCUPXNDEQDWEMM-UHFFFAOYSA-N 3-(diethylamino)propyl 2-methylprop-2-enoate Chemical compound CCN(CC)CCCOC(=O)C(C)=C PCUPXNDEQDWEMM-UHFFFAOYSA-N 0.000 description 1
- WWJCRUKUIQRCGP-UHFFFAOYSA-N 3-(dimethylamino)propyl 2-methylprop-2-enoate Chemical compound CN(C)CCCOC(=O)C(C)=C WWJCRUKUIQRCGP-UHFFFAOYSA-N 0.000 description 1
- LPBMPRKJYKSRLL-UHFFFAOYSA-N 3-benzoylchromen-2-one Chemical compound C=1C2=CC=CC=C2OC(=O)C=1C(=O)C1=CC=CC=C1 LPBMPRKJYKSRLL-UHFFFAOYSA-N 0.000 description 1
- WECDUOXQLAIPQW-UHFFFAOYSA-N 4,4'-Methylene bis(2-methylaniline) Chemical compound C1=C(N)C(C)=CC(CC=2C=C(C)C(N)=CC=2)=C1 WECDUOXQLAIPQW-UHFFFAOYSA-N 0.000 description 1
- YARZEPAVWOMMHZ-UHFFFAOYSA-N 4-(3,4-dicarboxy-4-phenylcyclohexa-1,5-dien-1-yl)phthalic acid Chemical compound OC(=O)C1C=C(C=2C=C(C(C(O)=O)=CC=2)C(O)=O)C=CC1(C(O)=O)C1=CC=CC=C1 YARZEPAVWOMMHZ-UHFFFAOYSA-N 0.000 description 1
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- ZIBGPFATKBEMQZ-UHFFFAOYSA-N triethylene glycol Chemical compound OCCOCCOCCO ZIBGPFATKBEMQZ-UHFFFAOYSA-N 0.000 description 1
- YFNKIDBQEZZDLK-UHFFFAOYSA-N triglyme Chemical compound COCCOCCOCCOC YFNKIDBQEZZDLK-UHFFFAOYSA-N 0.000 description 1
- 239000008096 xylene Substances 0.000 description 1
Landscapes
- Compositions Of Macromolecular Compounds (AREA)
- Macromolecular Compounds Obtained By Forming Nitrogen-Containing Linkages In General (AREA)
Abstract
Description
【0001】[0001]
【発明の属する技術分野】本発明は、半導体素子の表面
コート膜等の保護膜や薄膜多層配線基板の層間絶縁膜等
の材料として好適な感光性ポリイミド前駆体組成物及び
パターンの製造法に関する。The present invention relates to a photosensitive polyimide precursor composition and a method for producing a pattern suitable as a material for a protective film such as a surface coat film of a semiconductor element and an interlayer insulating film of a thin film multilayer wiring board.
【0002】[0002]
【従来の技術】ポリイミド又はその前駆体であってそれ
自体でフォトパターニング性を兼備しているものは感光
性ポリイミドと呼ばれ、半導体の表面保護膜用等に用い
られる。感光性ポリイミドにはいくつかの感光性付与方
式が知られている。代表的なものには、特公昭55−4
1422号公報で提案されているようなポリアミド酸の
ヒドロキシアクリレートとのエステルとしたものや、特
開昭54−145794号公報で提案されているような
ポリアミド酸にアミノアクリレートのようなものを配合
し感光性基を塩結合で導入するものが知られている。こ
れらの材料はポリアミド酸自体が剛直なために、スピン
コート等によって作製する膜状態では従来の紫外線硬化
塗料やドライフィルムレジストと比較して低感度となる
欠点がある。2. Description of the Related Art Polyimide or a precursor thereof which also has photopatterning properties by itself is called photosensitive polyimide, and is used for a surface protective film of a semiconductor or the like. Several photosensitive methods are known for photosensitive polyimide. A typical example is Japanese Patent Publication No. 55-4
No. 1422, which is an ester of a polyamic acid with hydroxyacrylate, or a compound such as an amino acrylate which is mixed with a polyamic acid proposed in Japanese Patent Application Laid-Open No. 54-145794. It is known to introduce a photosensitive group through a salt bond. These materials have a drawback in that the sensitivity of the film formed by spin coating or the like is lower than that of a conventional ultraviolet curable paint or dry film resist because the polyamic acid itself is rigid.
【0003】又、最近では、半導体の高集積化に伴い、
加工ルールが益々小さくなる傾向にある。そのため、従
来の平行光線を用いるコンタクト/プロキシミテイ露光
機から、ミラープロジエクションと呼ばれる1:1投影
露光機、さらにステッパと呼ばれる縮小投影露光機が用
いられるようになってきている。最近はi線ステッパが
主流になってきており、i線での感度が求められてい
る。一方で、保存時の極性溶媒中に溶解した状態におい
て保存時のワニスの粘度変化や感光特性が低下してしま
う欠点がある。このため、膜状態での高感度化、特にi
線露光による高感度化と保存時の溶液状態での保存安定
性を両立できない問題があった。In recent years, along with the high integration of semiconductors,
Processing rules tend to become smaller and smaller. For this reason, a 1: 1 projection exposure machine called mirror projection and a reduced projection exposure machine called a stepper have been used instead of the conventional contact / proximity exposure machine using parallel rays. Recently, i-line steppers have become mainstream, and sensitivity at i-line is required. On the other hand, there is a disadvantage that the varnish changes in viscosity during storage and the photosensitive characteristics are reduced in a state of being dissolved in a polar solvent during storage. Therefore, high sensitivity in the film state, particularly i
There was a problem that it was impossible to achieve both high sensitivity by line exposure and storage stability in a solution state during storage.
【0004】[0004]
【発明が解決しようとする課題】請求項1記載の発明
は、i線での感光特性に優れ、低露光量でも良好な形状
のパターンが得られ、貯蔵安定性に優れ、硬化膜特性に
も優れる感光性ポリイミド前駆体組成物を提供するもの
である。請求項2記載の発明は、請求項1記載の発明の
課題に加え、さらに感度に優れる感光性ポリイミド前駆
体組成物を提供するものである。請求項3記載の発明
は、i線での感光特性に優れ、低露光量でも良好な形状
のパターンが得られ、硬化膜特性に優れる硬化膜が得ら
れるパターン製造法を提供するものである。The invention according to claim 1 has excellent i-line photosensitive characteristics, can obtain a pattern having a good shape even at a low exposure dose, has excellent storage stability, and has excellent cured film characteristics. An object of the present invention is to provide an excellent photosensitive polyimide precursor composition. A second aspect of the present invention provides a photosensitive polyimide precursor composition having further excellent sensitivity in addition to the object of the first aspect of the present invention. The third aspect of the present invention is to provide a method for producing a pattern which is excellent in i-line photosensitive characteristics, can obtain a pattern having a good shape even at a low exposure dose, and can obtain a cured film having excellent cured film characteristics.
【0005】[0005]
【課題を解決するための手段】本発明は、一般式(I)The present invention provides a compound represented by the general formula (I):
【化2】 (式中、R1は4価の有機基、R2は感光性基、R3、
R4、R5及びR6は各々独立に水素原子又は1価の有機
基であってこれら4つのうち少なくとも2つは1価の有
機基を示す)で表される構成単位を有してなる感光性ポ
リイミド前駆体、チタノセン化合物及び450nm〜60
0nmに吸収を持つ色素化合物を含有してなる感光性ポリ
イミド前駆体組成物に関する。Embedded image (Wherein, R 1 is a tetravalent organic group, R 2 is a photosensitive group, R 3 ,
R 4 , R 5, and R 6 are each independently a hydrogen atom or a monovalent organic group, and at least two of these four are monovalent organic groups). Photosensitive polyimide precursor, titanocene compound and 450 nm to 60
The present invention relates to a photosensitive polyimide precursor composition containing a dye compound having an absorption at 0 nm.
【0006】また本発明は、さらに常圧において100
℃以上の沸点を有する付加重合性化合物を含有する前記
の感光性ポリイミド前駆体組成物に関する。さらに本発
明は、前記感光性ポリイミド前駆体樹脂組成物を用いて
形成してなる被膜に、所定のパターンのマスクを介して
i線を照射した後、該被膜を現像することを特徴とする
パターン製造法に関する。[0006] The present invention further relates to a method for controlling the pressure of 100
The present invention relates to the photosensitive polyimide precursor composition containing an addition polymerizable compound having a boiling point of not lower than ° C. Furthermore, the present invention provides a pattern formed by irradiating a coating formed using the photosensitive polyimide precursor resin composition with an i-line through a mask having a predetermined pattern, and then developing the coating. Related to manufacturing method.
【0007】[0007]
【発明の実施の形態】本発明の感光性ポリイミド前駆体
組成物に用いられるポリイミド前駆体は、一般にテトラ
カルボン酸残基とジアミン残基からなる構成単位を有す
るポリアミド酸又はその誘導体であり、感光性基は、テ
トラカルボン酸残基に結合している。一般式(I)で示
される構成単位において、R1で示される4価の有機基
は、一般にテトラカルボン酸の残基であり、硬化して得
られるポリイミド膜の機械特性、耐熱性及び接着性の観
点から、炭素数4以上の4価の有機基であることが好ま
しく、炭素数4〜30の有機基であることがより好まし
く、芳香環を含む有機基であることが好ましい。その好
ましい例を、下記構造式群に挙げる。なお、ポリイミド
前駆体分子中、複数存在する前記繰り返し単位におい
て、全てのR1は、同じであってもよく異なっていても
よい。R1はジアミンと反応して、ポリイミド樹脂を形
成することができるテトラカルボン酸二無水物の残基で
あることが好ましい。BEST MODE FOR CARRYING OUT THE INVENTION The polyimide precursor used in the photosensitive polyimide precursor composition of the present invention is generally a polyamic acid having a structural unit consisting of a tetracarboxylic acid residue and a diamine residue or a derivative thereof. The sex group is bonded to a tetracarboxylic acid residue. In the structural unit represented by the general formula (I), the tetravalent organic group represented by R 1 is generally a residue of a tetracarboxylic acid, and the mechanical properties, heat resistance, and adhesiveness of a polyimide film obtained by curing. In view of the above, a tetravalent organic group having 4 or more carbon atoms is preferable, an organic group having 4 to 30 carbon atoms is more preferable, and an organic group containing an aromatic ring is preferable. Preferred examples thereof are shown in the following structural formula group. In the polyimide precursor molecule, in the plurality of repeating units, all R 1 s may be the same or different. R 1 is preferably a residue of a tetracarboxylic dianhydride capable of reacting with a diamine to form a polyimide resin.
【0008】[0008]
【化3】 Embedded image
【0009】[0009]
【化4】 Embedded image
【0010】感光性ポリイミド前駆体において、R2で
示される感光性基とは、光の照射により脱離する基、光
の照射により二量化や共重合しうる基等であり、中でも
重合性不飽和二重結合を有する基であると容易に良好な
感光性を付与できるので好ましい。感光性基の結合は共
有結合又はイオン結合を介していればよい。具体的にはIn the photosensitive polyimide precursor, the photosensitive group represented by R 2 is a group capable of leaving upon irradiation with light, a group capable of dimerization or copolymerization upon irradiation with light, and the like. A group having a saturated double bond is preferable because good photosensitivity can be easily imparted. The bond of the photosensitive group may be via a covalent bond or an ionic bond. In particular
【化5】 (式中、R7は2価の有機基である)で示される基が好
ましい。R7としては、アルキレン基、アリーレン基等
が挙げられ、炭素原子数1〜10のものが好ましい。Embedded image (Wherein, R 7 is a divalent organic group). R 7 includes an alkylene group, an arylene group and the like, and preferably has 1 to 10 carbon atoms.
【0011】一般式(I)で示される構成単位におい
て、R3、R4、R5及びR6は、水素原子又は1価の有機
基であってこれら4つのうち少なくとも2つは1価の有
機基である。特に、2つの芳香環に別々に1価の有機基
が存在するものが好ましい。1価の有機基としては、メ
チル基、エチル基、プロピル基等の炭素原子数1〜4の
アルキル基、ハロゲン、ハロゲン化アルキルなどが好ま
しい。In the structural unit represented by the general formula (I), R 3 , R 4 , R 5 and R 6 are a hydrogen atom or a monovalent organic group, and at least two of these four are monovalent. Organic group. In particular, those in which a monovalent organic group is separately present in two aromatic rings are preferable. As the monovalent organic group, an alkyl group having 1 to 4 carbon atoms such as a methyl group, an ethyl group and a propyl group, a halogen, an alkyl halide and the like are preferable.
【0012】この構成単位におけるジアミン残基の好ま
しい例を下記に挙げる。Preferred examples of the diamine residue in this structural unit are shown below.
【化6】 Embedded image
【0013】本発明で用いるポリイミド前駆体として
は、前記一般式(I)で示される構成単位と共に、一般
式(II)で示される構成単位を含んでいてもよい。これ
は、The polyimide precursor used in the present invention may contain a structural unit represented by the general formula (II) together with a structural unit represented by the general formula (I). this is,
【化7】 (式中、R8は4価の有機基、R9は2価の有機基、R10
は1価の有機基又は水酸基であり、一般式(I)で示さ
れる構成単位を含まない)で表される構成単位である。Embedded image (Wherein, R 8 is a tetravalent organic group, R 9 is a divalent organic group, R 10
Is a monovalent organic group or a hydroxyl group, and does not include the structural unit represented by the general formula (I)).
【0014】R8で示される4価の有機基の具体例とし
ては前記R1で示される有機基と同様のものが挙げら
れ、好ましいものも同様であり、R10で示される1価の
有機基の具体例としてはR2で示される有機基と同様の
感光性基が好ましいが、その他、メトキシ基、エトキシ
基、n−プロポキシ基、イソプロポキシ基、n−ブトキ
シ基等のアルコキシ基、ベンジルオキシ基等のアリール
オキシ基、アルキルアミノ基、ジアルキルアミノ基、ア
ニリノ基、トルイジノ基などを含んでいてもよい。Specific examples of the tetravalent organic group represented by R 8 include the same as the organic group represented by R 1 , and preferred examples thereof are also the same, and the same applies to the monovalent organic group represented by R 10. Specific examples of the group include the same photosensitive group as the organic group represented by R 2 , and in addition, an alkoxy group such as a methoxy group, an ethoxy group, an n-propoxy group, an isopropoxy group, and an n-butoxy group; It may contain an aryloxy group such as an oxy group, an alkylamino group, a dialkylamino group, an anilino group, a toluidino group, and the like.
【0015】一般式(II)において、R9は2価の有機
基であり、硬化して得られるポリイミド膜の機械特性、
耐熱性、接着性等の観点から芳香環又はケイ素を含むも
のが好ましい。一般式(II)で示される構成単位が分子
中に複数存在する場合、複数のR2は同一でも異なって
いてもよい。R9は、テトラカルボン酸二無水物と反応
してポリイミド樹脂を形成することができるジアミン化
合物の残基であることが好ましく、炭素数6〜30の有
機基であることが好ましく、特に芳香環を含む有機基で
あることが好ましい。In the general formula (II), R 9 is a divalent organic group, and the mechanical properties of the polyimide film obtained by curing are as follows:
Those containing an aromatic ring or silicon are preferred from the viewpoint of heat resistance, adhesiveness and the like. When a plurality of structural units represented by the general formula (II) are present in a molecule, a plurality of R 2 may be the same or different. R 9 is preferably a residue of a diamine compound capable of forming a polyimide resin by reacting with tetracarboxylic dianhydride, and is preferably an organic group having 6 to 30 carbon atoms, particularly an aromatic ring. The organic group preferably contains
【0016】R9の好ましい例を下記する。Preferred examples of R 9 are as follows.
【0017】[0017]
【化8】 Embedded image
【0018】[0018]
【化9】 Embedded image
【0019】[0019]
【化10】 Embedded image
【0020】[0020]
【化11】 Embedded image
【0021】本発明のポリイミド前駆体において、一般
式(I)及び(II)で示される構成単位の割合として
は、各構成単位のモル百分率で、(I)が10〜100
モル%、(II)が90〜0モル%であることが、高感度
で良好なパターン形状が得られるので好ましく、(I)
が20〜50モル%、(II)が80〜50モル%である
ことがより好ましい。In the polyimide precursor of the present invention, the ratio of the structural units represented by the general formulas (I) and (II) is 10 to 100 in terms of mole percentage of each structural unit.
Mol% and (II) are preferably from 90 to 0 mol%, since high sensitivity and a good pattern shape can be obtained.
Is more preferably 20 to 50 mol%, and (II) is more preferably 80 to 50 mol%.
【0022】また、ポリイミド前駆体側鎖、即ち、R3
及びR10で示される基の総計において、10〜100モ
ル%を感光性基とすることが好ましい。感光性基以外の
基を合わせ持つ場合、膜特性の点から、炭素数4以下の
アルキル基とすることが好ましく、メチル基、エチル
基、n−プロピル基、イソプロピル基、n−ブチル基
が、特に好ましい。Further, a polyimide precursor side chain, ie, R 3
And 10 to 100 mol% of the total group represented by R10 and R10 is preferably a photosensitive group. When having a group other than the photosensitive group, from the viewpoint of film properties, it is preferable to use an alkyl group having 4 or less carbon atoms, and a methyl group, an ethyl group, an n-propyl group, an isopropyl group, and an n-butyl group are Particularly preferred.
【0023】本発明におけるポリイミド前駆体の分子量
としては、膜特性等の点から、重量平均分子量で、10
000〜200000が好ましい。重量平均分子量は、
GPC(ゲル・パーミエーション・クロマトグラフィ
ー)で測定し、ポリスチレン換算で算出することができ
る。The molecular weight of the polyimide precursor in the present invention is, in terms of film characteristics and the like, 10% by weight-average molecular weight.
000 to 200,000 is preferred. The weight average molecular weight is
It can be measured by GPC (gel permeation chromatography) and calculated in terms of polystyrene.
【0024】本発明で用いる感光性ポリイミド前駆体
は、イオン結合により感光基を導入する場合は、テトラ
カルボン酸二無水物とジアミンを反応させてポリアミド
酸とした後、感光性基を有するアミンまたはその四級塩
を反応させる方法、共有結合により感光性基を導入する
場合は、テトラカルボン酸二無水物とヒドロキシ基含有
化合物を混合して反応させ、テトラカルボン酸のハーフ
エステルを製造した後、塩化チオニルにより酸クロリド
化し、ついで、ジアミンと反応させる方法や、前記テト
ラカルボン酸ハーフエステルをカルボジイミド類を縮合
剤としてジアミンと反応させる方法等により合成するこ
とができる。これらのうち、イオン結合で感光性基を導
入する方法が簡易で、良好な感光性を付与することがで
きるので好ましい。The photosensitive polyimide precursor used in the present invention, when a photosensitive group is introduced by ionic bonding, is obtained by reacting a tetracarboxylic dianhydride with a diamine to obtain a polyamic acid, and then forming an amine or a photosensitive group-containing amine. A method of reacting the quaternary salt, when a photosensitive group is introduced by a covalent bond, a reaction is performed by mixing a tetracarboxylic dianhydride and a hydroxy group-containing compound to produce a half ester of tetracarboxylic acid, It can be synthesized by a method of acid chloride with thionyl chloride and then reacting with a diamine, or a method of reacting the tetracarboxylic acid half ester with a diamine using a carbodiimide as a condensing agent. Of these, the method of introducing a photosensitive group by ionic bonding is preferred because it is simple and can impart good photosensitivity.
【0025】前記テトラカルボン酸二無水物としては、
例えば、オキシジフタル酸、ピロメリット酸、3,
3′,4,4′−ベンゾフェノンテトラカルボン酸、
3,3′,4,4′−ビフェニルテトラカルボン酸、
1,2,5,6−ナフタレンテトラカルボン酸、2,
3,6,7−ナフタレンテトラカルボン酸、1,4,
5,8−ナフタレンテトラカルボン酸、2,3,5,6
−ピリジンテトラカルボン酸、3,4,9,10−ペリ
レンテトラカルボン酸、スルホニルジフタル酸、m−タ
ーフェニル−3,3′,4,4′−テトラカルボン酸、
p−ターフェニル−3,3′,4,4′−テトラカルボ
ン酸、1,1,1,3,3,3−ヘキサフルオロ−2,
2−ビス(2,3−又は3,4−ジカルボキシフェニ
ル)プロパン、2,2−ビス(2,3−又は3,4−ジ
カルボキシフェニル)プロパン、2,2−ビス{4′−
(2,3−又は3,4−ジカルボキシフェノキシ)フェ
ニル}プロパン、1,1,1,3,3,3−ヘキサフル
オロ−2,2−ビス{4′−(2,3−又は3,4−ジ
カルボキシフェノキシ)フェニル}プロパン、下記一般
式(III)The tetracarboxylic dianhydride includes:
For example, oxydiphthalic acid, pyromellitic acid, 3,
3 ', 4,4'-benzophenonetetracarboxylic acid,
3,3 ', 4,4'-biphenyltetracarboxylic acid,
1,2,5,6-naphthalenetetracarboxylic acid, 2,
3,6,7-naphthalenetetracarboxylic acid, 1,4
5,8-naphthalenetetracarboxylic acid, 2,3,5,6
-Pyridinetetracarboxylic acid, 3,4,9,10-perylenetetracarboxylic acid, sulfonyldiphthalic acid, m-terphenyl-3,3 ', 4,4'-tetracarboxylic acid,
p-terphenyl-3,3 ', 4,4'-tetracarboxylic acid, 1,1,1,3,3,3-hexafluoro-2,
2-bis (2,3- or 3,4-dicarboxyphenyl) propane, 2,2-bis (2,3- or 3,4-dicarboxyphenyl) propane, 2,2-bis {4'-
(2,3- or 3,4-dicarboxyphenoxy) phenyl} propane, 1,1,1,3,3,3-hexafluoro-2,2-bis {4 ′-(2,3- or 3, 4-dicarboxyphenoxy) phenyl} propane, the following general formula (III)
【化12】 (式中、R11及びR12は一価の炭化水素基を示し、それ
ぞれ同一でも異なっていてもよく、sは1以上の整数で
ある)で表されるテトラカルボン酸等の芳香族テトラカ
ルボン酸などのテトラカルボン酸の二無水物が挙げら
れ、これらは単独で又は2種類以上を組み合わせて使用
される。中でも前記一般式(I)におけるR1の好まし
い例として示した構造を与えるテトラカルボン酸が好ま
しい。Embedded image (Wherein, R 11 and R 12 each represent a monovalent hydrocarbon group, and may be the same or different, and s is an integer of 1 or more). Examples include tetracarboxylic dianhydrides such as acids, which are used alone or in combination of two or more. Among them, a tetracarboxylic acid giving the structure shown as a preferable example of R 1 in the general formula (I) is preferable.
【0026】一般式(I)で示される構成単位における
ジアミン残基R2を与えるジアミンとしては、2,2′
−ジアルキル−4,4′―ジアミノベンジジン、2,
2′,6,6′−テトラアルキル−4,4′―ジアミノ
ベンジジン(前記アルキル基は、メチル基、エチル基ま
たはイソプロピル基)が好ましいものとして挙げられ
る。The diamine providing the diamine residue R2 in the structural unit represented by the general formula (I) includes 2,2 '
-Dialkyl-4,4'-diaminobenzidine, 2,
2 ', 6,6'-tetraalkyl-4,4'-diaminobenzidine (the alkyl group is a methyl group, an ethyl group or an isopropyl group) is preferred.
【0027】その他のジアミンとしては、4,4′−
(又は3,4′−、3,3′−、2,4′−、2,2′
−)ジアミノジフェニルエーテル、4,4′−(又は
3,4′−、3,3′−、2,4′−、2,2′−)ジ
アミノジフェニルメタン、4,4′−(又は3,4′
−、3,3′−、2,4′−、2,2′−)ジアミノジ
フェニルスルホン、4,4′−(又は3,4′−、3,
3′−、2,4′−、2,2′−)ジアミノジフェニル
スルフィド、パラフェニレンジアミン、メタフェニレン
ジアミン、p−キシリレンジアミン、m−キシリレンジ
アミン、o−トリジン,o−トリジンスルホン、4,
4′−メチレン−ビス−(2,6−ジエチルアニリ
ン)、4,4′−メチレン−ビス−(2,6−ジイソプ
ロピルアニリン)、2,4−ジアミノメシチレン、1,
5−ジアミノナフタレン、4,4′−ベンゾフェノンジ
アミン、ビス−{4−(4′−アミノフェノキシ)フェ
ニル}スルホン、1,1,1,3,3,3−ヘキサフル
オロ−2,2−ビス(4−アミノフェニル)プロパン、
2,2−ビス{4−(4′−アミノフェノキシ)フェニ
ル}プロパン、3,3′−ジメチル−4,4′−ジアミ
ノジフェニルメタン、3,3′,5,5′−テトラメチ
ル−4,4′−ジアミノジフェニルメタン、ビス{4−
(3′−アミノフェノキシ)フェニル}スルホン、2,
2−ビス(4−アミノフェニル)プロパン、等が挙げら
れ、これらは単独で又は2種類以上を組み合わせて使用
される。Other diamines include 4,4'-
(Or 3,4'-, 3,3'-, 2,4'-, 2,2 '
-) Diaminodiphenyl ether, 4,4'- (or 3,4'-, 3,3'-, 2,4'-, 2,2'-) diaminodiphenylmethane, 4,4'- (or 3,4 '
-, 3,3'-, 2,4'-, 2,2'-) diaminodiphenylsulfone, 4,4'- (or 3,4'-, 3,
3'-, 2,4'-, 2,2'-) diaminodiphenyl sulfide, paraphenylenediamine, metaphenylenediamine, p-xylylenediamine, m-xylylenediamine, o-tolidine, o-tolidine sulfone, ,
4'-methylene-bis- (2,6-diethylaniline), 4,4'-methylene-bis- (2,6-diisopropylaniline), 2,4-diaminomesitylene,
5-diaminonaphthalene, 4,4'-benzophenonediamine, bis- {4- (4'-aminophenoxy) phenyl} sulfone, 1,1,1,3,3,3-hexafluoro-2,2-bis ( 4-aminophenyl) propane,
2,2-bis {4- (4'-aminophenoxy) phenyl} propane, 3,3'-dimethyl-4,4'-diaminodiphenylmethane, 3,3 ', 5,5'-tetramethyl-4,4 '-Diaminodiphenylmethane, bis @ 4-
(3'-aminophenoxy) phenyl disulfone, 2,
2-bis (4-aminophenyl) propane, and the like, which are used alone or in combination of two or more.
【0028】接着性向上のためには、下記一般式(IV)In order to improve the adhesiveness, the following general formula (IV)
【化13】 (式中、R13及びR14は二価の炭化水素基を示し、それ
ぞれ同一でも異なっていてもよく、R15及びR16は一価
の炭化水素基を示し、それぞれ同一でも異なっていても
よく、tは1以上の整数である)で表されるジアミノポ
リシロキサン等のジアミンを使用することが好ましく、
この時アミンは、全ジアミン成分中、0.1〜20モル
%用いることが好ましい。R13及びR14としては、メチ
レン基、エチレン基、プロピレン基等のアルキレン基、
フェニレン基等のアリーレン基、それらの結合基などが
挙げられ、R15及びR16としては、メチル基、エチル基
等のアルキル基、フェニル基等のアリール基などが挙げ
られる。Embedded image (Wherein, R 13 and R 14 each represent a divalent hydrocarbon group, which may be the same or different, and R 15 and R 16 each represent a monovalent hydrocarbon group, each of which may be the same or different. Often, t is an integer of 1 or more), and it is preferable to use a diamine such as diaminopolysiloxane,
At this time, the amine is preferably used in an amount of 0.1 to 20 mol% based on all the diamine components. R 13 and R 14 are an alkylene group such as a methylene group, an ethylene group, a propylene group,
Examples thereof include an arylene group such as a phenylene group, and a bonding group thereof. Examples of R 15 and R 16 include an alkyl group such as a methyl group and an ethyl group, and an aryl group such as a phenyl group.
【0029】また、耐熱性向上のために、4,4′−ジ
アミノジフェニルエーテル−3−スルホンアミド、3,
4′−ジアミノジフェニルエーテル−4−スルホンアミ
ド、3,4′−ジアミノジフェニルエーテル−3′−ス
ルホンアミド、3,3′−ジアミノジフェニルエーテル
−4−スルホンアミド、4,4′−ジアミノジフェニル
エーテル−3−カルボキサミド、3,4′−ジアミノジ
フェニルエーテル−4−カルボキサミド、3,4′−ジ
アミノジフェニルエーテル−3′−カルボキサミド、
3,3′−ジアミノジフェニルエーテル−4−カルボキ
サミド等のスルホンアミド基又はカルボキサミド基を有
するジアミン化合物を使用することもできる。これら
の、ジアミンは単独で又は2種類以上を組み合わせて使
用される。In order to improve heat resistance, 4,4'-diaminodiphenyl ether-3-sulfonamide,
4'-diaminodiphenylether-4-sulfonamide, 3,4'-diaminodiphenylether-3'-sulfonamide, 3,3'-diaminodiphenylether-4-sulfonamide, 4,4'-diaminodiphenylether-3-carboxamide, 3,4'-diaminodiphenyl ether-4-carboxamide, 3,4'-diaminodiphenyl ether-3'-carboxamide,
A diamine compound having a sulfonamide group or a carboxamide group such as 3,3'-diaminodiphenyl ether-4-carboxamide can also be used. These diamines are used alone or in combination of two or more.
【0030】イオン結合を導入するために用いられるア
ミノ基及び感光性基を有する化合物としては、例えば、
N,N−ジメチルアミノエチルメタクリレート、N,N
−ジエチルアミノエチルメタクリレート、N,N−ジメ
チルアミノプロピルメタクリレート、N,N−ジエチル
アミノプロピルメタクリレート、N,N−ジメチルアミ
ノエチルアクリレート、N,N−ジエチルアミノエチル
アクリレート、N,N−ジメチルアミノプロピルアクリ
レート、N,N−ジエチルアミノプロピルアクリレー
ト、N,N−ジメチルアミノエチルアクリルアミド、
N,N−ジメチルアミノエチルアクリルアミド等が好ま
しいものとして挙げられる。これらは単独で又は2種類
以上を組み合わせて使用される。Examples of the compound having an amino group and a photosensitive group used for introducing an ionic bond include, for example,
N, N-dimethylaminoethyl methacrylate, N, N
-Diethylaminoethyl methacrylate, N, N-dimethylaminopropyl methacrylate, N, N-diethylaminopropyl methacrylate, N, N-dimethylaminoethyl acrylate, N, N-diethylaminoethyl acrylate, N, N-dimethylaminopropyl acrylate, N, N-dimethylaminopropyl acrylate N-diethylaminopropyl acrylate, N, N-dimethylaminoethyl acrylamide,
N, N-dimethylaminoethylacrylamide and the like are preferred. These are used alone or in combination of two or more.
【0031】前記アミノ基及び感光性基を有する化合物
の使用量は、感光性基を導入する前のポリイミド前駆体
の量に対して、1〜200重量%とすることが好まし
く、5〜150重量%とすることがより好ましい。この
使用量が、1重量%未満であると、光感度が劣る傾向が
あり、200重量%を超えると、耐熱性、フィルムの機
械特性等が劣る傾向がある。The amount of the compound having an amino group and a photosensitive group is preferably 1 to 200% by weight, and more preferably 5 to 150% by weight based on the amount of the polyimide precursor before introducing the photosensitive group. % Is more preferable. If the amount is less than 1% by weight, the photosensitivity tends to be inferior, and if it exceeds 200% by weight, the heat resistance and the mechanical properties of the film tend to be inferior.
【0032】本発明の感光性ポリイミド前駆体組成物に
は、チタノセン化合物が含まれる。チタノセン化合物の
例としては、下記一般式(V)The photosensitive polyimide precursor composition of the present invention contains a titanocene compound. As an example of the titanocene compound, the following general formula (V)
【化14】 (式中、R17、R18、R19、R20、R21、R22、R23、
R24、R25およびR26は各々独立に水素原子、ハロゲン
原子、炭素数1〜20のアルコキシ基または複素環を示
す)で表されるものが、感度に優れ好ましい。Embedded image (Wherein, R 17 , R 18 , R 19 , R 20 , R 21 , R 22 , R 23 ,
R 24 , R 25, and R 26 each independently represent a hydrogen atom, a halogen atom, an alkoxy group having 1 to 20 carbon atoms or a heterocyclic ring), and are preferably excellent in sensitivity.
【0033】具体的な化合物としては、ビス(シクロペ
ンタジエニル)−ビス[2,6−ジフルオロ−3−(2
−(1H−ピロール−1−イル)プロピル)フェニル]
チタン、ビス(シクロペンタジエニル)−ビス[2,6
−ジフルオロ−3−(2−(1H−ピロール−1−イ
ル)メチル)フェニル]チタン、ビス(シクロペンタジ
エニル)−ビス[2,6−ジフルオロ−3−(ピロール
ー1ーイル)フェニル]チタン、ビス(シクロペンタジ
エニル)−ビス[2,6−ジフルオロ−3−(2,5ー
ジメチルピロール−1−イル)フェニル]チタン、ビス
(シクロペンタジエニル)−ビス[2,6−ジフルオロ
−3−(2,5−ジエチルピロール−1−イル)フェニ
ル]チタン、ビス(シクロペンタジエニル)−ビス
[2,6−ジフルオロ−3−(2,5−ジイソプロピル
ピロール−1−イル)フェニル]チタン、ビス(シクロ
ペンタジエニル)−ビス[2,6−ジフルオロ−3−
(2,5−ビスジメチルアミノピロールー1ーイル)フ
ェニル]チタン、ビス(シクロペンタジエニル)−ビス
[2,6−ジフルオロ−3−(2,5−ジメチル−3−
メトキシピロール−1−イル)フェニル]チタン、ビス
(シクロペンタジエニル)−ビス[2,6−ジフルオロ
−3−メトキシフェニル]チタン、ビス(シクロペンタ
ジエニル)−ビス[2,6−ジフルオロ−3−イソプロ
ポキシフェニル]チタン、ビス(シクロペンタジエニ
ル)−ビス[2,6−ジフルオロ−3−n−プロポキシ
フェニル]チタン等が挙げられる。As a specific compound, bis (cyclopentadienyl) -bis [2,6-difluoro-3- (2
-(1H-pyrrol-1-yl) propyl) phenyl]
Titanium, bis (cyclopentadienyl) -bis [2,6
-Difluoro-3- (2- (1H-pyrrol-1-yl) methyl) phenyl] titanium, bis (cyclopentadienyl) -bis [2,6-difluoro-3- (pyrrol-1-yl) phenyl] titanium, Bis (cyclopentadienyl) -bis [2,6-difluoro-3- (2,5-dimethylpyrrol-1-yl) phenyl] titanium, bis (cyclopentadienyl) -bis [2,6-difluoro- 3- (2,5-diethylpyrrol-1-yl) phenyl] titanium, bis (cyclopentadienyl) -bis [2,6-difluoro-3- (2,5-diisopropylpyrrol-1-yl) phenyl] Titanium, bis (cyclopentadienyl) -bis [2,6-difluoro-3-
(2,5-bisdimethylaminopyrrol-1-yl) phenyl] titanium, bis (cyclopentadienyl) -bis [2,6-difluoro-3- (2,5-dimethyl-3-)
Methoxypyrrole-1-yl) phenyl] titanium, bis (cyclopentadienyl) -bis [2,6-difluoro-3-methoxyphenyl] titanium, bis (cyclopentadienyl) -bis [2,6-difluoro- 3-isopropoxyphenyl] titanium, bis (cyclopentadienyl) -bis [2,6-difluoro-3-n-propoxyphenyl] titanium and the like.
【0034】これらは単独で又は2種以上を組み合わせ
て使用される。組成物中の含有量は、ポリイミド前駆体
100重量部に対して、0.1〜10.0重量部とする
ことが好ましく、0.3〜5.0重量部とすることがよ
り好ましい。These are used alone or in combination of two or more. The content in the composition is preferably 0.1 to 10.0 parts by weight, more preferably 0.3 to 5.0 parts by weight, based on 100 parts by weight of the polyimide precursor.
【0035】本発明の感光性ポリイミド前駆体組成物に
含まれる色素化合物は450nm〜600nmに吸収を持つ
ものである。この好ましい例としては、フェノールフタ
レン、フェノールレッド、ニールレッド、ピロガロール
レッド、ピロガロールバイオレッド、デイスパースレッ
ド1、デイスパースレッド13、デイスパースレッド1
9、デイスパースオレンジ1、デイスパースオレンジ
3、デイスパースオレンジ13、デイスパースオレンジ
25、デイスパースブルー3、デイスパースブルー1
4、エオシンB、ロダミンB、キナリザリン、5ー(4
ージメチルアミノベンジリデン)ロダニン、アウリント
リカルボキシアシド、アルミノン、アリザリン、パラロ
ーザニリン、エモジン、チオニン及びメチレンバイオレ
ットが挙げられ、より好ましいものとしては、フェノー
ルフタレン、デイスパースレッド1及びニールレッドが
挙げられる。これらは単独で又は2種以上を組み合わせ
て使用される。組成物中の含有量としては、貯蔵安定性
の点から、ポリイミド前駆体100重量部に対して、
0.1〜3.0重量部とすることが好ましく、0.3〜
1.5重量部とすることがより好ましい。The dye compound contained in the photosensitive polyimide precursor composition of the present invention has an absorption at 450 to 600 nm. Preferred examples thereof include phenolphthalene, phenol red, neal red, pyrogallol red, pyrogallol violet, disperse red 1, disperse red 13, disperse red 1
9, Day sparse orange 1, Day sparse orange 3, Day sparse orange 13, Day sparse orange 25, Day sparse blue 3, Day sparse blue 1
4, eosin B, rhodamine B, quinalizarin, 5- (4
-Dimethylaminobenzylidene) rhodanine, aurin tricarboxyside, aluminone, alizarin, pararosaniline, emodin, thionine and methylene violet, more preferably phenolphthalene, disperse red 1 and neil red . These are used alone or in combination of two or more. As the content in the composition, from the viewpoint of storage stability, based on 100 parts by weight of the polyimide precursor,
It is preferably 0.1 to 3.0 parts by weight, and 0.3 to 3.0 parts by weight.
More preferably, it is 1.5 parts by weight.
【0036】また本発明においては、さらに常圧におい
て100℃以上の沸点を有する付加重合性化合物を併用
することが好ましい。常圧において沸点が100℃より
低いものでは系内に含有する溶剤を乾燥等によって除去
する際または活性光線を照射する際、該付加重合性化合
物が揮散して特性を低下させる傾向がある。また、付加
重合性化合物は有機溶剤に可溶なものが好ましい。In the present invention, it is preferable to use an addition polymerizable compound having a boiling point of 100 ° C. or more at normal pressure. When the boiling point is lower than 100 ° C. at normal pressure, when the solvent contained in the system is removed by drying or the like or when irradiating with an actinic ray, the addition polymerizable compound tends to volatilize and the properties tend to deteriorate. The addition polymerizable compound is preferably soluble in an organic solvent.
【0037】常圧において100℃以上の沸点を有する
付加重合性化合物としては、多価アルコールとα,β−
不飽和カルボン酸とを縮合して得られる化合物、(例え
ばエチレングリコールジ(メタ)アクリレート(ジアク
リレートまたはジメタクリレートの意味、以下同じ)、
トリエチレングリコールジ(メタ)アクリレート、テト
ラエチレングリコールジ(メタ)アクリレート、トリメ
チロールプロパンジ(メタ)アクリレート、トリメチロ
ールプロパントリ(メタ)アクリレート、1,2−プロ
ピレングリコールジ(メタ)アクリレート、ジ(1,2
−プロピレングリコール)ジ(メタ)アクリレート、ト
リ(1,2−プロピレングリコール)ジ(メタ)アクリ
レート、テトラ(1,2−プロピレングリコール)ジ
(メタ)アクリレート、ジメチルアミノエチル(メタ)
アクリレート、ジエチルアミノエチル(メタ)アクリレ
ート、ジメチルアミノプロピル(メタ)アクリレート、
ジエチルアミノプロピル(メタ)アクリレート、1,4
−ブタンジオールジ(メタ)アクリレート、1,6−ヘ
キサンジオールジ(メタ)アクリレート、ペンタエリス
リトールトリ(メタ)アクリレート等)、スチレン、ジ
ビニルベンゼン、4−ビニルトルエン、4−ビニルピリ
ジン、N−ビニルピロリドン、2−ヒドロキシエチル
(メタ)アクリレート、1,3−(メタ)アクリロイル
オキシ−2−ヒドロキシプロパン、メチレンビスアクリ
ルアミド、N,N−ジメチルアクリルアミド、N−メチ
ロールアクリルアミド、ネオペンチルグリコールジ(メ
タ)アクリレート、ペンタエリスリトールジ(メタ)ア
クリレート、ジペンタエリスリトールヘキサ(メタ)ア
クリレート、テトラメチロールプロパンテトラ(メタ)
アクリレート等が挙げられ、これらは単独で又は2種以
上を組み合わせて使用される。これらを用いる場合は、
ポリイミド前駆体100重量部に対し、1〜100重量
部配合することが好ましく、3〜50重量部の範囲がさ
らに好ましい。1〜100重量部の範囲を逸脱すると、
目的とする効果が低下する傾向があり、また、現像性に
好ましくない影響をおよぼす傾向がある。As the addition polymerizable compound having a boiling point of 100 ° C. or more at normal pressure, polyhydric alcohols and α, β-
A compound obtained by condensing an unsaturated carboxylic acid, for example, ethylene glycol di (meth) acrylate (meaning diacrylate or dimethacrylate, the same applies hereinafter),
Triethylene glycol di (meth) acrylate, tetraethylene glycol di (meth) acrylate, trimethylolpropane di (meth) acrylate, trimethylolpropane tri (meth) acrylate, 1,2-propylene glycol di (meth) acrylate, di ( 1,2
-Propylene glycol) di (meth) acrylate, tri (1,2-propylene glycol) di (meth) acrylate, tetra (1,2-propylene glycol) di (meth) acrylate, dimethylaminoethyl (meth)
Acrylate, diethylaminoethyl (meth) acrylate, dimethylaminopropyl (meth) acrylate,
Diethylaminopropyl (meth) acrylate, 1,4
-Butanediol di (meth) acrylate, 1,6-hexanediol di (meth) acrylate, pentaerythritol tri (meth) acrylate, etc.), styrene, divinylbenzene, 4-vinyltoluene, 4-vinylpyridine, N-vinylpyrrolidone , 2-hydroxyethyl (meth) acrylate, 1,3- (meth) acryloyloxy-2-hydroxypropane, methylenebisacrylamide, N, N-dimethylacrylamide, N-methylolacrylamide, neopentylglycol di (meth) acrylate, Pentaerythritol di (meth) acrylate, dipentaerythritol hexa (meth) acrylate, tetramethylolpropanetetra (meth)
Acrylates and the like can be mentioned, and these are used alone or in combination of two or more. When using these,
The amount is preferably 1 to 100 parts by weight, more preferably 3 to 50 parts by weight, based on 100 parts by weight of the polyimide precursor. When deviating from the range of 1 to 100 parts by weight,
The desired effect tends to decrease, and also tends to adversely affect the developability.
【0038】本発明の感光性ポリイミド組成物に用いる
有機溶剤としては、例えば、アセトン、メチルエチルケ
トン、ジエチルケトン、トルエン、クロロホルム、メタ
ノール、エタノール、1−プロパノール、2−プロパノ
ール、1−ブタノール、2−ブタノール、t−ブタノー
ル、エチレングリコールモノメチルエーテル、キシレ
ン、テトラヒドロフラン、ジオキサン、シクロペンタノ
ン、N,N−ジメチルアセトアミド、N,N−ジメチル
ホルムアミド、N−メチル−2−ピロリドン、Nーアセ
チルー2ーピロリドン、Nーベンジルー2ーピロリド
ン、γ−ブチロラクトン、ジメチルスルホキシド、エチ
レンカーボネート、プロピレンカーボネート、スルホラ
ン、ヘキサメチレンホスホルトリアミド、Nーアセチル
ーεーカプロラクタム、ジメチルイミダゾリジノン、ジ
エチレングリコールジメチルエーテル、トリエチレング
リコールジメチルエーテル等が好適な例として挙げられ
る。これらは単独で用いても良いし、混合系として用い
ることも可能である。組成物中の含有量は、特に制限は
ないが、ポリイミド前駆体100重量部に対して、10
0〜300重量部とすることが好ましく、150〜20
0重量部とすることがより好ましい。Examples of the organic solvent used in the photosensitive polyimide composition of the present invention include acetone, methyl ethyl ketone, diethyl ketone, toluene, chloroform, methanol, ethanol, 1-propanol, 2-propanol, 1-butanol and 2-butanol. , T-butanol, ethylene glycol monomethyl ether, xylene, tetrahydrofuran, dioxane, cyclopentanone, N, N-dimethylacetamide, N, N-dimethylformamide, N-methyl-2-pyrrolidone, N-acetyl-2-pyrrolidone, N-benzyl-2 -Pyrrolidone, γ-butyrolactone, dimethyl sulfoxide, ethylene carbonate, propylene carbonate, sulfolane, hexamethylene phosphortriamide, N-acetyl-ε-caprolactam, Preferred examples include dimethylimidazolidinone, diethylene glycol dimethyl ether, and triethylene glycol dimethyl ether. These may be used alone or as a mixed system. The content in the composition is not particularly limited, but 10 parts by weight based on 100 parts by weight of the polyimide precursor.
0 to 300 parts by weight, preferably 150 to 20 parts by weight.
More preferably, it is 0 parts by weight.
【0039】本発明の感光性ポリイミド前駆体組成物
は、さらに必要に応じて以下に示すような光開始剤を含
有してもよい。そのような光開始剤としては、例えば、
ミヒラーズケトン、ベンゾインメチルエーテル、ベンゾ
インエチルエーテル、ベンゾインイソプロピルエーテ
ル、2−t−ブチルアントラキノン、2−エチルアント
ラキノン、4,4′−ビス(PーN,Nージエチルアミ
ノ)ベンゾフェノン、アセトフェノン、ベンゾフェノ
ン、チオキサントン、2,2−ジメトキシ−2−フェニ
ルアセトフェノン、1−ヒドロキシシクロヘキシルフェ
ニルケトン、2−メチル−[4−(メチルチオ)フェニ
ル]−2−モルフォリノ−1−プロパノン、ベンジル、
ジフェニルジスルフィド、フェナンスレンキノン、2−
イソプロピルチオキサントン、リボフラビンテトラブチ
レート、N−フェニルジエタノールアミン、2−(o−
エトキシカルボニル)オキシイミノ−1,3−ジフェニ
ルプロパンジオン、1−フェニル−2−(o−エトキシ
カルボニル)オキシイミノプロパン−1−オン、3,
3′,4,4′−テトラ(t−ブチルパーオキシカルボ
ニル)ベンゾフェノン、N−(p−シアノフェニル)グ
リシン、N−(p−メチルスルホニルフェニル)グリシ
ン等が挙げられる。これらの光開始剤の使用量について
は特に制限はないが用いる場合、ポリイミド前駆体10
0重量部に対し、0.1〜50重量部配合されることが
好ましく、0.3〜20重量部の範囲がさらに好まし
い。The photosensitive polyimide precursor composition of the present invention may further contain a photoinitiator as shown below, if necessary. Such photoinitiators include, for example,
Michler's ketone, benzoin methyl ether, benzoin ethyl ether, benzoin isopropyl ether, 2-t-butylanthraquinone, 2-ethylanthraquinone, 4,4'-bis (PN, N-diethylamino) benzophenone, acetophenone, benzophenone, thioxanthone, , 2-Dimethoxy-2-phenylacetophenone, 1-hydroxycyclohexylphenyl ketone, 2-methyl- [4- (methylthio) phenyl] -2-morpholino-1-propanone, benzyl,
Diphenyl disulfide, phenanthrenequinone, 2-
Isopropylthioxanthone, riboflavin tetrabutyrate, N-phenyldiethanolamine, 2- (o-
Ethoxycarbonyl) oxyimino-1,3-diphenylpropanedione, 1-phenyl-2- (o-ethoxycarbonyl) oxyiminopropan-1-one, 3,
3 ', 4,4'-tetra (t-butylperoxycarbonyl) benzophenone, N- (p-cyanophenyl) glycine, N- (p-methylsulfonylphenyl) glycine and the like. The amount of these photoinitiators used is not particularly limited, but when used, the polyimide precursor 10
It is preferably added in an amount of 0.1 to 50 parts by weight, more preferably 0.3 to 20 parts by weight, based on 0 parts by weight.
【0040】本発明の感光性ポリイミド前駆体組成物は
必要に応じて以下に示すような増感剤を含有してもよ
い。増感剤としては、例えば各種クマリン化合物、ベン
ザルアセトフェノン、4′−N,N−ジメチルアミノベ
ンザルアセトフェノン、4′−アセトアミノベンザル−
4−メトキシアセトフェノン等が挙げられる。これらの
中で、クマリン化合物を用いるとパターン性、特にパタ
ーン形状及び解像性が良好になるので好ましい。The photosensitive polyimide precursor composition of the present invention may optionally contain a sensitizer as shown below. Examples of the sensitizer include various coumarin compounds, benzalacetophenone, 4'-N, N-dimethylaminobenzalacetophenone, 4'-acetoaminobenzal-
4-methoxyacetophenone and the like. Of these, the use of a coumarin compound is preferable because the patternability, particularly the pattern shape and the resolution, are improved.
【0041】クマリン化合物としては、7−N,N−ジ
エチルアミノクマリン、3,3′−カルボニルビス(7
−N,Nージエチルアミノ)クマリン、3,3′−カル
ボニルビス(7−N,Nージメトキシ)クマリン、3−
チエニルカルボニル−7−N,N−ジエチルアミノクマ
リン、3−ベンゾイルクマリン、3−ベンゾイル−7−
N,N−メトキシクマリン、3−(4′−メトキシベン
ゾイル)クマリン、3,3′−カルボニルビス−5,7
−(ジメトキシ)クマリン、7−ジエチルアミノ−3−
テノニルクマリン、7−メトキシ−3−ベンゾイルクマ
リン、3,3′−カルボニルビス−(7−メトキシクマ
リン)、3,3′−カルボニルビス−(7−エトキシク
マリン)、3−(4−シアノベンゾイル)−5,7−ジ
メトキシクマリン、3−(2−ベンゾチアゾイル)−7
−(ジエチルアミノクマリン)、3−(2−ベンズイミ
ダゾイル)−7−(ジエチルアミノ)クマリン、7−ジ
エチルアミノ−4−メチルクマリン、4,6−ジメチル
−7−エチルアミノクマリン等が挙げられるが、これら
に限定されない。Coumarin compounds include 7-N, N-diethylaminocoumarin, 3,3'-carbonylbis (7
-N, N-diethylamino) coumarin, 3,3'-carbonylbis (7-N, N-dimethoxy) coumarin, 3-
Thienylcarbonyl-7-N, N-diethylaminocoumarin, 3-benzoylcoumarin, 3-benzoyl-7-
N, N-methoxycoumarin, 3- (4'-methoxybenzoyl) coumarin, 3,3'-carbonylbis-5,7
-(Dimethoxy) coumarin, 7-diethylamino-3-
Tenonyl coumarin, 7-methoxy-3-benzoyl coumarin, 3,3'-carbonylbis- (7-methoxycoumarin), 3,3'-carbonylbis- (7-ethoxycoumarin), 3- (4-cyanobenzoyl ) -5,7-Dimethoxycoumarin, 3- (2-benzothiazoyl) -7
-(Diethylaminocoumarin), 3- (2-benzimidazoyl) -7- (diethylamino) coumarin, 7-diethylamino-4-methylcoumarin, 4,6-dimethyl-7-ethylaminocoumarin and the like. It is not limited to.
【0042】増感剤の使用量については特に制限はない
が、用いる場合、ポリイミド前駆体100重量部に対
し、0.01〜50重量部配合されることが好ましく、
0.05〜20重量部の範囲がより好ましい。クマリン
化合物の場合は、ポリイミド前駆体100重量部に対し
て、0.01〜5.0重量部とすることが好ましく、
0.05〜3.0重量部とすることがより好ましい。The use amount of the sensitizer is not particularly limited, but when used, it is preferably incorporated in an amount of 0.01 to 50 parts by weight based on 100 parts by weight of the polyimide precursor.
The range is more preferably from 0.05 to 20 parts by weight. In the case of a coumarin compound, the amount is preferably 0.01 to 5.0 parts by weight based on 100 parts by weight of the polyimide precursor,
More preferably, the content is 0.05 to 3.0 parts by weight.
【0043】本発明の感光性ポリイミド前駆体組成物は
他の添加物、例えば、可塑剤、接着促進剤等の添加物を
含有しても良い。本発明のパターン製造法は、以上のよ
うにして得られる本発明の感光性ポリイミド前駆体組成
物を用いて、フォトリソグラフィ技術により該組成物の
硬化物からなるポリイミド膜を形成するものである。本
発明のパターン製造法では、まず、支持基板表面に本発
明の感光性ポリイミド前駆体組成物からなる被膜が形成
される。ここで、被膜または加熱硬化後のポリイミド被
膜と支持基板との接着性を向上させるため、あらかじめ
支持基板表面を接着助剤で処理しておいてもよい。The photosensitive polyimide precursor composition of the present invention may contain other additives, for example, additives such as a plasticizer and an adhesion promoter. The pattern production method of the present invention uses the photosensitive polyimide precursor composition of the present invention obtained as described above to form a polyimide film made of a cured product of the composition by a photolithography technique. In the pattern manufacturing method of the present invention, first, a film made of the photosensitive polyimide precursor composition of the present invention is formed on the surface of a supporting substrate. Here, in order to improve the adhesiveness between the coating or the polyimide coating after heat curing and the supporting substrate, the surface of the supporting substrate may be previously treated with an adhesion aid.
【0044】感光性ポリイミド前駆体組成物からなる被
膜は、例えば、感光性ポリイミド前駆体組成物のワニス
の膜を形成した後、これを乾燥させることにより形成す
ることができる。ワニスの膜の形成は、ワニスの粘度な
どに応じて、スピンナーを用いた回転塗布、浸漬、噴霧
印刷、スクリーン印刷などの手段から適宜選択された手
段により行うことができる。なお、被膜の膜厚は、塗布
条件、本組成物の固形分濃度等によって調節できる。ま
た、あらかじめ支持体上に形成した被膜を支持体から剥
離してポリイミド前駆体組成物からなるシートを形成し
ておき、このシートを上記支持基板の表面に貼り付ける
ことにより、上述の被膜を形成してもよい。The coating comprising the photosensitive polyimide precursor composition can be formed, for example, by forming a varnish film of the photosensitive polyimide precursor composition and then drying it. The varnish film can be formed by a means appropriately selected from means such as spin coating using a spinner, dipping, spray printing, and screen printing, depending on the viscosity of the varnish. The thickness of the film can be adjusted by the application conditions, the solid content concentration of the present composition, and the like. In addition, the film formed on the support is peeled off from the support to form a sheet made of the polyimide precursor composition, and the sheet is attached to the surface of the support substrate to form the film described above. May be.
【0045】つぎに、この被膜に、所定のパターンのフ
ォトマスクを介して光(通常は紫外線を用いる)を照射
する。この露光工程は、超高圧水銀灯を用いるコンタク
ト/プロキシミテイ露光機、ミラープロジェクション露
光機、g−線ステッパ、i線ステッパ、その他の紫外
線、可視光源、X線、電子線等を用いて行うことができ
る。特に本発明の感光性ポリイミド前駆体組成物は、i
線に対する光透過性に優れるので、i線ステッパ用とし
て好適である。Next, the film is irradiated with light (usually using ultraviolet light) through a photomask having a predetermined pattern. This exposure step can be performed using a contact / proximity exposure machine using an ultra-high pressure mercury lamp, a mirror projection exposure machine, a g-ray stepper, an i-ray stepper, other ultraviolet rays, a visible light source, X-rays, an electron beam, or the like. it can. In particular, the photosensitive polyimide precursor composition of the present invention comprises:
Since it has excellent light transmittance to a line, it is suitable for an i-line stepper.
【0046】ついで、現像液により未露光部を溶解除去
して、所望のレリーフ・パターンを得る。この現像工程
は、通常のフォトレジスト現像装置などを用いて行うこ
とができる。現像液としては、例えば、良溶媒(N,N
−ジメチルホルムアミド、N,N−ジメチルアセトアミ
ド、N−メチル−2−ピロリドン等)、前記良溶媒と貧
溶媒(低級アルコール、ケトン、水、芳香族炭化水素
等)との混合溶媒、塩基性溶液(水酸化テトラメチルア
ンモニウム水溶液、トリエタノールアミン水溶液等)が
挙げられる。Next, the unexposed portion is dissolved and removed with a developer to obtain a desired relief pattern. This developing step can be performed using a normal photoresist developing device or the like. As the developer, for example, a good solvent (N, N
-Dimethylformamide, N, N-dimethylacetamide, N-methyl-2-pyrrolidone, etc.), a mixed solvent of the above good solvent and a poor solvent (lower alcohol, ketone, water, aromatic hydrocarbon, etc.), a basic solution ( Aqueous solution of tetramethylammonium hydroxide, aqueous solution of triethanolamine, etc.).
【0047】現像後は、必要に応じて、水又は貧溶媒で
リンスを行い、100℃前後で乾燥し、パターンを安定
なものとすることが好ましい。また、このレリーフパタ
ーンを、加熱することによりイミド閉環し、パターン化
された高耐熱性ポリイミド膜を形成することができる。
このときの加熱温度は、150〜500℃とすることが
好ましく、200〜400℃とすることがより好まし
い。この加熱温度が、150℃未満であると、ポリイミ
ド膜の機械特性及び熱特性が低下する傾向があり、50
0℃を超えると、ポリイミド膜の機械特性及び熱特性が
低下する傾向がある。また、このときの加熱時間は、
0.05〜10時間とすることが好ましい。この加熱時
間が、0.05時間未満であると、ポリイミド膜の機械
特性及び熱特性が低下する傾向があり、10時間を超え
ると、ポリイミド膜の機械特性及び熱特性が低下する傾
向がある。After the development, it is preferable to perform rinsing with water or a poor solvent, if necessary, and to dry at about 100 ° C. to make the pattern stable. In addition, the relief pattern is heated to close the imide ring by heating to form a patterned highly heat-resistant polyimide film.
The heating temperature at this time is preferably from 150 to 500 ° C, more preferably from 200 to 400 ° C. If the heating temperature is lower than 150 ° C., the mechanical properties and thermal properties of the polyimide film tend to decrease,
If the temperature exceeds 0 ° C., the mechanical properties and thermal properties of the polyimide film tend to decrease. The heating time at this time is
It is preferable to set it to 0.05 to 10 hours. If the heating time is less than 0.05 hours, the mechanical and thermal characteristics of the polyimide film tend to decrease, and if it exceeds 10 hours, the mechanical and thermal characteristics of the polyimide film tend to decrease.
【0048】このようにして本発明の感光性樹脂組成物
は、半導体用表面保護膜、多層配線板の層間絶縁膜等に
使用することができる。また、上記の方法で、パッシベ
ーション膜を形成した基材の上にポリイミドパターンを
得、さらにこれをマスクとして用いて、前記パッシベー
ション膜をエッチングして加工する、いわゆるワンマス
クプロセスに好適に使用することもできる。As described above, the photosensitive resin composition of the present invention can be used for a surface protective film for a semiconductor, an interlayer insulating film of a multilayer wiring board, and the like. In addition, a polyimide pattern is obtained on a substrate on which a passivation film is formed by the above-described method, and further, the passivation film is etched and processed using the polyimide pattern as a mask. Can also.
【0049】ここでパッシベーション膜の加工とは、通
常、外部からの化学的な影響を防ぐために、SiO、S
iN等の無機物を用いて形成されているパッシベーショ
ン膜の導通部開口を行う加工のことである。なお、この
パッシベーション膜の上に残存するポリイミドパターン
は、封止剤からの物理的影響を防ぎ、表面保護膜として
機能する。また、前記パッシベーション膜の加工として
は、ボンディングパットの上と補償回路の上のパッシベ
ーション膜を、ドライエッチングで除去する加工が、歩
留向上等の点から好ましい。現像によって形成したレリ
ーフ・パターンは、次いでリンス液により洗浄して、現
像溶剤を除去する。リンス液には、現像液との混和性の
良いメタノール、エタノール、イソプロピルアルコー
ル、水などが好適な例としてあげられる。Here, the processing of the passivation film usually means that SiO, S
This is a process for opening a conduction portion of a passivation film formed using an inorganic substance such as iN. Note that the polyimide pattern remaining on the passivation film prevents physical influence from the sealing agent and functions as a surface protection film. In addition, as the processing of the passivation film, the processing of removing the passivation film on the bonding pad and the compensation circuit by dry etching is preferable from the viewpoint of improving yield. The relief pattern formed by the development is then washed with a rinsing liquid to remove the developing solvent. Preferable examples of the rinsing liquid include methanol, ethanol, isopropyl alcohol, and water having good miscibility with the developing liquid.
【0050】上述の処理によって得られたレリーフ・パ
ターンは、本発明のポリイミド前駆体が一部イミド化し
ているものもある。このレリーフ・パターンを、150
℃から450℃までの範囲から選ばれた温度で加熱処理
することにより、ポリイミドからなる樹脂パターンが高
解像度で得られる。この樹脂パターンは、耐熱性が高
く、機械特性に優れるので、半導体素子の表面保護膜、
薄層多層配線基板の層間絶縁膜等等として用いられる。In the relief pattern obtained by the above-mentioned treatment, there is a relief pattern in which the polyimide precursor of the present invention is partially imidized. This relief pattern is
By performing the heat treatment at a temperature selected from the range of ° C to 450 ° C, a resin pattern made of polyimide can be obtained with high resolution. Since this resin pattern has high heat resistance and excellent mechanical properties, the surface protection film of the semiconductor element,
It is used as an interlayer insulating film or the like of a thin multilayer wiring board.
【0051】[0051]
【実施例】以下、実施例により本発明を説明する。 ポリイミド前駆体の合成(合成例1〜3) 攪拌機及び温度計を備えた100mlのフラスコに、表1
に示したジアミン成分及びN−メチル−2−ピロリドン
を加え、窒素流通下、室温で攪拌溶解し、この溶液に表
1に示した酸成分を添加し、5時間攪拌し、粘稠なポリ
アミド酸の溶液を得た。さらに、この溶液を、70℃で
5時間加熱し、粘度を80ポイズ(固形分25重量%)
に調節し、ポリアミド酸の溶液(PI−1〜3)とした。
なお、ジアミン成分、酸成分及びN−メチル−2−ピロ
リドンの各使用量を、表1に合わせて示した。The present invention will be described below with reference to examples. Synthesis of Polyimide Precursor (Synthesis Examples 1 to 3) Table 1 was placed in a 100 ml flask equipped with a stirrer and a thermometer.
And N-methyl-2-pyrrolidone shown in (1) was added and dissolved by stirring at room temperature under nitrogen flow. The acid component shown in Table 1 was added to this solution, and the mixture was stirred for 5 hours to obtain a viscous polyamic acid. Was obtained. Further, this solution was heated at 70 ° C. for 5 hours, and the viscosity was 80 poise (solid content: 25% by weight).
To obtain polyamic acid solutions (PI-1 to 3).
The amounts of the diamine component, acid component, and N-methyl-2-pyrrolidone used are shown in Table 1.
【0052】粘度は、E型粘度計(東機産業(株)製、E
HD型)を使用し、温度が25℃、回転数が2.5rpm
で測定した。また、得られた各ポリイミド前駆体の溶液
を乾燥させたものを、KBr法により、赤外吸収スペク
トル(日本電子(株)製、JIR−100型)を測定した
ところ、いずれも、1600cm-1付近にアミド基のC=
Oの吸収と、3300cm-1付近にN−Hの吸収が確認さ
れた。The viscosity was measured using an E-type viscometer (manufactured by Toki Sangyo Co., Ltd., E
HD type), temperature is 25 ° C, rotation speed is 2.5rpm
Was measured. Further, those obtained by drying a solution of the obtained respective polyimide precursor, by KBr method, infrared absorption spectrum (JEOL Co., JIR-100 type) was measured, both, 1600 cm -1 Around the C =
O absorption and N-H absorption were confirmed at around 3300 cm -1 .
【0053】[0053]
【表1】 [Table 1]
【0054】実施例1〜5及び比較例1〜2 合成例1〜3で得られたポリアミド酸のN−メチル−2
−ピロリドン溶液(固形分25重量%)、3−ジアミノ
プロピルメタクリレート1.8g、ビス(シクリペンタ
ジエニル)−ビス(2,6−ジフルオロー3−(1H−
ピルーイル)フェニル)チタニウム0.1g、7−ジエ
チルアミノ−3−テノニルクマリン0.02g及び色素
化合物を配合後、ガラス製サンプル瓶にとりだし、イエ
ロールーム中で室温下に放置して貯蔵安定性試験を行っ
た。配置直後及び放置後7日経過した感光性樹脂の粘度
を表2に示した。Examples 1-5 and Comparative Examples 1-2 N-methyl-2 of the polyamic acid obtained in Synthesis Examples 1-3
-Pyrrolidone solution (solid content 25% by weight), 1.8 g of 3-diaminopropyl methacrylate, bis (cyclipentadienyl) -bis (2,6-difluoro-3- (1H-
After mixing 0.1 g of pyruyl) phenyl) titanium, 0.02 g of 7-diethylamino-3-thenonylcoumarin and a coloring compound, the mixture was taken out into a glass sample bottle, and left at room temperature in a yellow room to conduct a storage stability test. went. Table 2 shows the viscosities of the photosensitive resin immediately after the arrangement and 7 days after standing.
【0055】得られた感光性樹脂組成物溶液を、シリコ
ンウエハ上に滴下スピンコートした。次いで、ホットプ
レートを用いて、100℃で200秒間加熱し、溶剤を
乾燥させて感光性塗膜とした。乾燥後の膜厚は23ミク
ロンであった。塗膜上にフォトマスクを介し、i線ステ
ッパで露光した。これを、さらに100℃で60秒間加
熱し、N−メチル−2−ピロリドン/メチルアルコール
(4/1(容積比))の混合溶液を用いて、浸漬現像し
た。さらにイソプロパノールでリンスした。現像後のパ
ターン形状を測定し、観察し、残膜率(膜厚を初期の膜
厚で割った値)が90%となる露光量を感度として表2
に示した。これを、100℃で15分間、200℃で2
0分間、350℃で60分間加熱して、最終硬化膜厚1
0ミクロンの良好なポリイミドのレリーフパターンが得
られた。得られたポリイミドのレリーフパターンの一部
について、KBr法により、赤外吸収スペクトルを測定
したところ、1780cm-1付近にイミドの特性吸収が確
認された。The obtained photosensitive resin composition solution was dropped and spin-coated on a silicon wafer. Next, the mixture was heated at 100 ° C. for 200 seconds using a hot plate, and the solvent was dried to obtain a photosensitive coating film. The film thickness after drying was 23 microns. The coating film was exposed with an i-line stepper through a photomask. This was further heated at 100 ° C. for 60 seconds, and immersion developed using a mixed solution of N-methyl-2-pyrrolidone / methyl alcohol (4/1 (volume ratio)). Further, it was rinsed with isopropanol. The pattern shape after development was measured and observed, and the exposure amount at which the residual film ratio (the value obtained by dividing the film thickness by the initial film thickness) was 90% was defined as sensitivity as shown in Table 2.
It was shown to. This is carried out at 100 ° C. for 15 minutes and at 200 ° C. for 2 minutes.
Heated at 350 ° C. for 60 minutes for 0 minute to obtain a final cured film thickness of 1
A good polyimide relief pattern of 0 microns was obtained. An infrared absorption spectrum of a part of the obtained polyimide relief pattern was measured by the KBr method. As a result, characteristic absorption of the imide was confirmed at around 1780 cm -1 .
【0056】[0056]
【表2】 [Table 2]
【0057】[0057]
【発明の効果】請求項1記載の感光性ポリイミド前駆体
組成物は、i線での感光特性に優れ、低露光量でも良好
な形状のパターンが得られ、貯蔵安定性及び硬化膜特性
にも優れるものである。請求項2記載の感光性ポリイミ
ド前駆体組成物は、請求項1記載の発明の効果に加え、
さらに感度に優れるものである。請求項3記載のパター
ン製造法は、特にi線での感光特性に優れ、低露光量で
も良好な形状のパターンが得られ、硬化膜特性に優れる
硬化膜が得られるものである。The photosensitive polyimide precursor composition according to claim 1 is excellent in i-line photosensitive characteristics, can obtain a good-shaped pattern even at a low exposure dose, and has good storage stability and cured film characteristics. It is excellent. The photosensitive polyimide precursor composition according to claim 2 has the effect of the invention according to claim 1,
It is more excellent in sensitivity. According to the third aspect of the present invention, a pattern having a good shape can be obtained even with a low exposure amount, and a cured film having excellent cured film characteristics can be obtained.
───────────────────────────────────────────────────── フロントページの続き (51)Int.Cl.6 識別記号 FI // C08G 73/10 C08G 73/10 (72)発明者 萩原 秀雄 茨城県日立市東町四丁目13番1号 日立化 成工業株式会社半導体・液晶材料事業部開 発センタ内────────────────────────────────────────────────── ─── Continued on the front page (51) Int.Cl. 6 Identification symbol FI // C08G 73/10 C08G 73/10 (72) Inventor Hideo Hagiwara 4-3-1-1, Higashicho, Hitachi City, Ibaraki Prefecture Hitachi Chemical Semiconductor & Liquid Crystal Materials Division Development Center
Claims (3)
R4、R5及びR6は各々独立に水素原子又は1価の有機
基であってこれら4つのうち少なくとも2つは1価の有
機基を示す)で表される構成単位を有してなる感光性ポ
リイミド前駆体、チタノセン化合物及び450nm〜60
0nmに吸収を持つ色素化合物を含有してなる感光性ポリ
イミド前駆体組成物。1. A compound of the general formula (I) (Wherein, R 1 is a tetravalent organic group, R 2 is a photosensitive group, R 3 ,
R 4 , R 5, and R 6 are each independently a hydrogen atom or a monovalent organic group, and at least two of these four are monovalent organic groups). Photosensitive polyimide precursor, titanocene compound and 450 nm to 60
A photosensitive polyimide precursor composition containing a dye compound having an absorption at 0 nm.
を有する付加重合性化合物を含有する請求項1記載の感
光性ポリイミド前駆体組成物。2. The photosensitive polyimide precursor composition according to claim 1, further comprising an addition polymerizable compound having a boiling point of 100 ° C. or higher at normal pressure.
前駆体樹脂組成物を用いて形成してなる被膜に、所定の
パターンのマスクを介してi線を照射した後、該被膜を
現像することを特徴とするパターン製造法。3. A film formed using the photosensitive polyimide precursor resin composition according to claim 1 or 2 is irradiated with i-line through a mask having a predetermined pattern, and then the film is developed. A pattern manufacturing method characterized by the above-mentioned.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP18019097A JPH1124257A (en) | 1997-07-04 | 1997-07-04 | Photosensitive polyimide precursor composition and pattern forming method by using same |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP18019097A JPH1124257A (en) | 1997-07-04 | 1997-07-04 | Photosensitive polyimide precursor composition and pattern forming method by using same |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH1124257A true JPH1124257A (en) | 1999-01-29 |
Family
ID=16078975
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP18019097A Pending JPH1124257A (en) | 1997-07-04 | 1997-07-04 | Photosensitive polyimide precursor composition and pattern forming method by using same |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH1124257A (en) |
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