JPH11248617A - Contamination degree detecting method for substrate surface, and device therefor - Google Patents
Contamination degree detecting method for substrate surface, and device thereforInfo
- Publication number
- JPH11248617A JPH11248617A JP6192398A JP6192398A JPH11248617A JP H11248617 A JPH11248617 A JP H11248617A JP 6192398 A JP6192398 A JP 6192398A JP 6192398 A JP6192398 A JP 6192398A JP H11248617 A JPH11248617 A JP H11248617A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- contamination
- ring
- cooling plate
- scattering ring
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000758 substrate Substances 0.000 title claims abstract description 88
- 238000011109 contamination Methods 0.000 title claims abstract description 43
- 238000000034 method Methods 0.000 title claims description 17
- 238000001816 cooling Methods 0.000 claims abstract description 35
- 238000001514 detection method Methods 0.000 claims description 3
- 230000008034 disappearance Effects 0.000 claims description 2
- 239000003595 mist Substances 0.000 claims description 2
- 230000003287 optical effect Effects 0.000 claims description 2
- 230000015572 biosynthetic process Effects 0.000 claims 1
- 238000005507 spraying Methods 0.000 claims 1
- 239000010453 quartz Substances 0.000 abstract description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 4
- 229910052710 silicon Inorganic materials 0.000 abstract description 4
- 239000010703 silicon Substances 0.000 abstract description 4
- 230000001678 irradiating effect Effects 0.000 abstract description 3
- 238000005259 measurement Methods 0.000 description 5
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 4
- 239000000356 contaminant Substances 0.000 description 3
- 238000012545 processing Methods 0.000 description 3
- 230000035945 sensitivity Effects 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 235000012431 wafers Nutrition 0.000 description 3
- 238000004833 X-ray photoelectron spectroscopy Methods 0.000 description 2
- 230000005494 condensation Effects 0.000 description 2
- 238000009833 condensation Methods 0.000 description 2
- 238000012937 correction Methods 0.000 description 2
- 230000001066 destructive effect Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000010419 fine particle Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000001179 sorption measurement Methods 0.000 description 2
- 238000004220 aggregation Methods 0.000 description 1
- 230000002776 aggregation Effects 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 238000000149 argon plasma sintering Methods 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 239000005357 flat glass Substances 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 230000000877 morphologic effect Effects 0.000 description 1
- 239000003921 oil Substances 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000011077 uniformity evaluation Methods 0.000 description 1
Landscapes
- Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
Abstract
Description
【0001】[0001]
【発明の属する技術分野】この発明はシリコンウエハー
や石英などの大型基板の洗浄技術に関するものであり、
特に大型基板表面の微小な汚染を効率的かつ精度良く検
出する技術に関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a technology for cleaning large substrates such as silicon wafers and quartz.
In particular, the present invention relates to a technology for efficiently and accurately detecting minute contamination on the surface of a large-sized substrate.
【0002】[0002]
【従来の技術】シリコンウエハーや石英などは各種電子
素子の基板としてなくてはならぬものであり、これら基
板の表面に微小な汚染層が存在する場合には、基板とし
て所期の機能を発揮し得なくなる為、この微小な汚染層
を検出して除去することは極めて重要な技術である。2. Description of the Related Art Silicon wafers and quartz are indispensable as substrates for various electronic devices, and when a minute contaminant layer exists on the surface of these substrates, they exhibit their intended functions as substrates. Therefore, detecting and removing the minute contaminant layer is a very important technique.
【0003】この基板の汚染を検出する方法として、従
来においては図1に示す様に検査対象である基板上に直
径数ミリ程度の液滴2を滴下し、その接触角θを測定
し、この接触角θの大きさから汚染度を検出する手法が
知られている。つまり、液滴の接触角θと汚染度とは相
関関係にあり、汚染度が高い程、その接触角θは大きく
なるので、この液滴2の接触角θの測定を基板1面内の
複数点で実施すれば、基板1面内の汚染分布を知ること
ができるのである。Conventionally, as a method of detecting contamination of a substrate, as shown in FIG. 1, a droplet 2 having a diameter of several millimeters is dropped on a substrate to be inspected, and its contact angle θ is measured. A method of detecting the degree of contamination from the magnitude of the contact angle θ is known. That is, there is a correlation between the contact angle θ of the droplet and the degree of contamination, and the higher the degree of contamination, the larger the contact angle θ. If carried out at the point, the contamination distribution in the surface of the substrate 1 can be known.
【0004】[0004]
【発明が解決しようとする課題】この様な液滴2の接触
角θの測定は、基板1表面の汚染度を感度良く測定でき
る手法ではあるが、基板1表面の多点測定は極めて時間
と手間がかかり、大型基板には向いていなかった。又、
接触角θの測定は極めて微妙で、測定者によって測定値
にばらつきが生じることは避けられず、不正確な結果が
出やすいといった欠点もあった。The measurement of the contact angle θ of the droplet 2 is a technique capable of measuring the degree of contamination of the surface of the substrate 1 with high sensitivity. However, the measurement of multiple points on the surface of the substrate 1 is extremely time-consuming. It was troublesome and was not suitable for large substrates. or,
The measurement of the contact angle θ is extremely delicate, and it is inevitable that the measured value varies depending on the measurer, and there is a disadvantage that an inaccurate result is easily obtained.
【0005】一方、ESCAやXPSといった化学分析
によって汚染度を測定する手法も存在するが、この場合
には真空チャンバー中に基板1を入れなければならない
為、大気中とは表面状態が異ってしまう欠点が存在して
いた。又、真空チャンバーは一般的に小さい為、測定対
象である基板1を小さく切断する必要があり、破壊検査
にならざろう得なかった。又、この場合には基板1の電
気伝導性に測定結果が大きく影響されるといった問題も
存在していた。一方、微粒子のレーザー散乱を利用した
パーティクルカウンターでは、基板1表面の凹凸は検出
できても、原理上、化学吸着による微小な有機汚染層の
検出は不可能であった。On the other hand, there is a method of measuring the degree of contamination by chemical analysis such as ESCA or XPS. In this case, since the substrate 1 must be placed in a vacuum chamber, the surface state differs from that in the atmosphere. There were drawbacks. In addition, since the vacuum chamber is generally small, it is necessary to cut the substrate 1 to be measured into small pieces, so that the destructive inspection cannot be performed. In this case, there is also a problem that the measurement result is greatly affected by the electric conductivity of the substrate 1. On the other hand, with a particle counter using laser scattering of fine particles, it was impossible in principle to detect a fine organic contaminant layer by chemical adsorption, even though irregularities on the substrate 1 surface could be detected.
【0006】この様に、シリコンウエハーや石英等の基
板表面の汚染度の検出は技術的にかなりむずかしかった
が、本発明者は鋭意研究を行った結果、基板表面に付着
した微小液滴からの散乱光によって生ずる散乱リングに
着目し、この散乱リングの形態から微小有機汚染層を含
め各種の汚染を効率良くかつ高精度で検出する手法を確
定し、その為の装置を開発し、ここに本件発明として提
案するものである。As described above, it was technically difficult to detect the degree of contamination on the surface of a substrate such as a silicon wafer or quartz. Focusing on the scattering ring generated by the scattered light, we determined a method to detect various types of contamination efficiently and with high accuracy, including the minute organic contamination layer, based on the form of this scattering ring, and developed a device for that purpose. It is proposed as an invention.
【0007】[0007]
【課題を解決するための手段】この発明は、検査対象で
ある基板の表面に多数の微小液滴を付着させ、該基板の
上方あるいは下方からその微小液滴に向けて平行光線を
照射し、微小液滴からの散乱光によって基板上方あるい
は下方に生ずる散乱リングを光学的手段によって観察
し、その直径、リング幅、リングの歪み、散乱リングの
消失時間から基板表面の汚染状況を検出しようとするも
のであり、又、冷却機能を持ち、表面に複数個の小突起
を有し、該小突起上に検査対象である基板を載置するよ
うにした平坦な冷却プレートと;前記冷却プレートの上
方に空間を隔てて位置し、前記冷却プレートに向けて平
行光線を照射する様にした光線照射装置と;冷却プレー
トと光線照射装置との間の空間に上下移動可能に位置し
た散乱光観測用カメラ;とから基板表面の汚染度検出装
置を構成することにより、上記課題を解決せんとするも
のである。According to the present invention, a large number of microdroplets are attached to the surface of a substrate to be inspected, and a parallel light beam is irradiated from above or below the substrate toward the microdroplets. Observe the scattering ring generated above or below the substrate by the scattered light from the microdroplets by optical means, and try to detect the state of contamination on the substrate surface from its diameter, ring width, ring distortion, and disappearance time of the scattering ring. A flat cooling plate having a cooling function, having a plurality of small projections on the surface, and mounting a substrate to be inspected on the small projections; A light irradiating device positioned at a distance from the cooling plate to irradiate parallel rays toward the cooling plate; and a scattered light observation camera movably positioned in a space between the cooling plate and the light irradiating device. ; By configuring the contamination degree detection device for the substrate surface from a, it solves St. the above problems.
【0008】[0008]
【発明の実施の形態】図2はこの発明に係る基板表面の
汚染度検出装置の一実施形態の説明図であり、図中3は
平坦な冷却プレートであり、冷却機能を有し、表面には
複数個の小突起4が設けられており、この小突起4の上
に検査対象である基板1を載置する様になっている。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS FIG. 2 is an explanatory view of an embodiment of the apparatus for detecting the degree of contamination of a substrate surface according to the present invention. In the figure, reference numeral 3 denotes a flat cooling plate which has a cooling function and has a cooling function. Is provided with a plurality of small projections 4, on which the substrate 1 to be inspected is placed.
【0009】又、5は冷却プレート制御部であり、これ
で冷却プレート3の冷却状況を制御する様になってい
る。一方、冷却プレート3の上方には空間を隔てて、冷
却プレート3側を指向した光線照射装置6が位置せしめ
られている。この光線照射装置6は光線を発生させる光
源7と放物面ミラー8とからなっており、冷却プレート
3へ向けて垂直な平行光線9を照射できる様になってい
る。Reference numeral 5 denotes a cooling plate control unit, which controls the cooling state of the cooling plate 3. On the other hand, above the cooling plate 3, a light beam irradiation device 6 directed toward the cooling plate 3 is positioned with a space therebetween. The light beam irradiation device 6 includes a light source 7 for generating light beams and a parabolic mirror 8, and can irradiate the cooling plate 3 with vertical parallel light beams 9.
【0010】光源7としては白色光あるいはレーザー光
などの単色光が用いられる。更に、冷却プレート3と光
線照射装置6との間の空間には、散乱光観測用カメラ1
0が冷却プレート3側を指向して上下移動可能に位置せ
しめられており、この散乱光観測用カメラ10はモニタ
ー装置11及び画像処理装置12にそれぞれ接続されて
いる。As the light source 7, monochromatic light such as white light or laser light is used. Further, a camera 1 for scattered light observation is provided in a space between the cooling plate 3 and the light beam irradiation device 6.
Numeral 0 is positioned so as to be movable up and down in the direction of the cooling plate 3, and the scattered light observation camera 10 is connected to a monitor device 11 and an image processing device 12, respectively.
【0011】この基板表面の汚染度検出装置は上記の通
りの構成を有するものであり、被検出対象である基板1
を冷却プレート3の小突起4上に載置し、この基板1を
0℃近くまで緩やかに冷却する。この冷却速度は冷却プ
レート制御部5で任意にコントロールできる。なお、基
板1は冷却プレート3には直接接触しておらず、小突起
4に接触しているのみなので、冷却プレート3によって
基板1の表面が汚染されるおそれはない。この冷却プレ
ート3の冷却によって基板1は冷却され、その表面には
大気中の水蒸気が凝縮し、微小な液滴2からなる液滴群
が形成される。この液滴2の大きさは数ミクロンから数
100ミクロンである。The apparatus for detecting the degree of contamination on the substrate surface has the structure described above, and the substrate 1 to be detected is
Is placed on the small projections 4 of the cooling plate 3 and the substrate 1 is slowly cooled to near 0 ° C. This cooling rate can be arbitrarily controlled by the cooling plate controller 5. Since the substrate 1 does not directly contact the cooling plate 3 but only contacts the small protrusions 4, there is no possibility that the surface of the substrate 1 is contaminated by the cooling plate 3. The substrate 1 is cooled by the cooling of the cooling plate 3, and water vapor in the air is condensed on the surface of the substrate 1 to form a droplet group composed of minute droplets 2. The size of the droplet 2 is several microns to several hundred microns.
【0012】この様な状況のもと、上方に位置した光線
照射装置6の光源7を点灯すると、放物面ミラー8によ
って反射した平行光線9はこの微小液滴2が形成されて
いる基板1表面へ垂直に照射される。すると、図3に示
す様に、微小液滴2からなる液滴群からの光散乱現象に
よって散乱リング13が発生する。この散乱リング13
は基板1の上方の観測点から視認可能である。そして、
この散乱リング13は基板1の汚染状況に応じた特有な
形態上の特徴を持っているので、この状態を散乱リング
観測用カメラ10によって捉え、その画像情報をモニタ
ー装置10で可視的に表示すると共に、画像処理装置1
2において処理し、あらかじめ蓄積してある汚染状況と
散乱リング13の形態の関係を分析したデータと比較
し、基板1の汚染状況を検出するのである。In such a situation, when the light source 7 of the light beam irradiation device 6 located above is turned on, the parallel light beam 9 reflected by the parabolic mirror 8 becomes the substrate 1 on which the microdroplets 2 are formed. Irradiated perpendicular to the surface. Then, as shown in FIG. 3, a scattering ring 13 is generated by a light scattering phenomenon from a droplet group including the minute droplets 2. This scattering ring 13
Are visible from an observation point above the substrate 1. And
Since the scattering ring 13 has a characteristic morphological characteristic according to the state of contamination of the substrate 1, this state is captured by the camera 10 for observing the scattering ring, and the image information is visually displayed on the monitor device 10. Together with the image processing device 1
2, the contamination state of the substrate 1 is detected by comparing the data accumulated in advance and analyzing the relationship between the contamination state and the form of the scattering ring 13.
【0013】基板1表面の汚染状況と散乱リング13と
の関係を述べれば、光源7として白色光を用いた場合に
は、図3に示す様に幅を有する円形のリングとして、レ
ーザー光などの単色光を用いた場合には、幅の狭いシャ
ープなリングとして、波長の異る2種類以上のレーザー
光を用いた場合には、2重の明確なリングとして観察さ
れるが、観察位置を一定にした場合、この散乱リング1
3の直径、リング幅及びリング形状の歪みには基板1表
面の汚染状況が敏感に反映される。The relationship between the state of contamination on the surface of the substrate 1 and the scattering ring 13 is as follows. When white light is used as the light source 7, a circular ring having a width as shown in FIG. When monochromatic light is used, it is observed as a narrow ring with a narrow width, and when two or more types of laser light with different wavelengths are used, it is observed as a double clear ring. Scatter ring 1
The state of contamination on the surface of the substrate 1 is sensitively reflected on the distortion of the diameter, ring width and ring shape of the substrate 3.
【0014】図3は白色光を入射させた場合の散乱リン
グの一例を示したものであり、散乱リングの外側は青
色、内側は赤色となり、この散乱リングの幅と汚染度と
の関係は図4に示すグラフの様になる。即ち、汚染度が
高くなる程、散乱リング13の径は大きくなり、又、そ
の幅も大きくなる。FIG. 3 shows an example of a scattering ring when white light is incident. The outside of the scattering ring is blue and the inside is red, and the relationship between the width of the scattering ring and the degree of contamination is shown in FIG. The result is as shown in the graph of FIG. That is, as the degree of contamination increases, the diameter of the scattering ring 13 increases, and its width also increases.
【0015】従って、この図4に示す両者の関係から基
板1表面の汚染度を定量化できるのである。又、基板1
表面の汚染度が一定均一なら散乱リング13は真円とな
るので、散乱リング13が歪んだ場合には、その部分は
他の領域と比較して汚染度が異ることを意味する。Therefore, the degree of contamination on the surface of the substrate 1 can be quantified from the relationship shown in FIG. Also, substrate 1
If the degree of contamination on the surface is constant and uniform, the scattering ring 13 becomes a perfect circle, so if the scattering ring 13 is distorted, it means that the part has a different degree of contamination than other regions.
【0016】従って、観察位置つまりカメラ10の位置
を上下に連続的に変化させることによって、基板1の全
領域の散乱リング13を観察し、基板1面内の汚染分布
を解析することができる。図5はこの様にカメラ10を
上昇させながら、散乱リング13を拡大していく状況を
示したものである。Therefore, by continuously changing the observation position, that is, the position of the camera 10 up and down, the scattering ring 13 in the entire region of the substrate 1 can be observed, and the distribution of contamination in the surface of the substrate 1 can be analyzed. FIG. 5 shows a situation in which the scattering ring 13 is enlarged while the camera 10 is raised as described above.
【0017】又、基板1上における水蒸気の凝縮に伴う
微小液滴の発生と成長は、基板表面が清浄な場合には図
6(a)→(b)→(c)、汚染されている場合には図
7(a)→(b)→(c)に示す様な過程をたどる。つ
まり、基板1表面が清浄な場合には、液滴2の接触角が
小さい為、凝集によって液滴形状が早く歪み、これに伴
い散乱リング13の消失も早いが、基板1表面が汚染さ
れている場合には、液滴2の接触角が大きく、図7に示
す様に液滴2はいつまでも存続し続けるので、散乱リン
グ13もなかなか消失しない。The generation and growth of fine droplets due to the condensation of water vapor on the substrate 1 are shown in FIG. 6 (a) → (b) → (c) when the substrate surface is clean, and when the substrate is contaminated. 7 (a) → (b) → (c). That is, when the surface of the substrate 1 is clean, the contact angle of the droplet 2 is small, so that the droplet shape is quickly distorted due to aggregation, and the scattering ring 13 disappears quickly with this, but the surface of the substrate 1 is contaminated. In this case, since the contact angle of the droplet 2 is large and the droplet 2 continues forever as shown in FIG. 7, the scattering ring 13 does not easily disappear.
【0018】従って、この散乱リング13の消失までの
時間と汚染度との関係から基板1の汚染度を検知するこ
とが可能なのである。なお、基板1に歪みが存在する場
合には、歪みが散乱リングの形態に影響を及ぼすことに
より、正確な汚染度の測定の妨げとなるが、図8に示す
様に、事前に初期歪みを有する基板1表面に平坦度の高
い透明板14を載せ、上方よりレーザー光15で全面を
走査し、ニュートンリングの原理によって干渉縞の変化
として現われた基板1表面の歪み量をバックグラウンド
データとしてあらかじめ蓄積しておき、散乱リング13
の真円度から歪みを解析する際、補正データとして利用
すれば基板1の初期歪みを補正することが可能となる。Accordingly, the degree of contamination of the substrate 1 can be detected from the relationship between the time until the scattering ring 13 disappears and the degree of contamination. In the case where distortion is present in the substrate 1, the distortion affects the shape of the scattering ring and hinders accurate measurement of the degree of contamination. However, as shown in FIG. A transparent plate 14 having a high degree of flatness is placed on the surface of the substrate 1, and the entire surface is scanned with a laser beam 15 from above. Accumulate the scattering ring 13
When the distortion is analyzed from the roundness of the substrate 1, the initial distortion of the substrate 1 can be corrected by using the correction data as correction data.
【0019】又、上記の実施形態においては、入射光側
から散乱リングを観測しているが、入射光側の散乱強度
が弱くなる傾向の強い板ガラスや石英などの透明基板の
場合には反対の透過側から観察する様にしても良い。Further, in the above embodiment, the scattering ring is observed from the incident light side. However, the opposite is applied to a transparent substrate such as a plate glass or quartz, which tends to have a weaker scattering intensity on the incident light side. Observation may be made from the transmission side.
【0020】更に、カメラ10の位置を上下移動させる
から、基板1表面を走査するのではなく、図9に示す様
にカメラ10の位置は固定したまま、基板1自体をコン
ベア等の移動手段16によって移動させながら走査する
様にしても良い。なお、この方法は湿度や温度などの環
境条件がコントロールされているチェンバー内やクリー
ンルーム内における汚染度の測定に向いている。Further, since the position of the camera 10 is moved up and down, the surface of the substrate 1 is not scanned, but the position of the camera 10 is fixed as shown in FIG. May be performed while moving. This method is suitable for measuring the degree of contamination in a chamber or a clean room in which environmental conditions such as humidity and temperature are controlled.
【0021】又、上記実施の形態においては、微小液滴
群の発生方法として冷却による水蒸気の凝縮を用いた
が、超音波振動子利用の微細ミスト発生装置やスチーム
発生装置を用いて微小液滴を発生させても良い。In the above embodiment, condensation of water vapor by cooling was used as a method for generating a group of fine droplets. However, a fine mist generator or a steam generator using an ultrasonic vibrator was used to generate fine droplets. May be generated.
【0022】[0022]
【発明の効果】この発明は上述通りの構成を有するもの
であり、散乱リングの形態から基板表面の汚染度を検出
するものであり、化学吸着による基板表面のわずかな有
機汚染を感度良く検出できるだけではなく、基板表面に
付着した微粒子の存在も感度良く検出することが可能で
ある。The present invention has the structure as described above, and detects the degree of contamination of the substrate surface from the form of the scattering ring, and can detect only a small amount of organic contamination on the substrate surface due to chemical adsorption with high sensitivity. Instead, the presence of fine particles attached to the substrate surface can be detected with high sensitivity.
【0023】又、水面に浮んだオイルやLB(ラングミ
ュアーブロジェット)膜などの超薄膜層の均一性評価に
も応用可能であり、非破壊で大面積基板の評価を高速で
実施でき、基板の種類にも制限はなく、ほとんどの材料
の平坦基板に適用可能であるという汎用性も有してお
り、極めて実用的なものである。The present invention is also applicable to the uniformity evaluation of ultra-thin layers such as oil floating on the water surface and LB (Langmuir Blodgett) films, and enables non-destructive evaluation of large-area substrates at high speed. There is no limitation on the type of the material, and it has versatility that it can be applied to flat substrates made of most materials, and is extremely practical.
【0024】[0024]
【図1】基板表面に滴下した液滴の拡大図。FIG. 1 is an enlarged view of a droplet dropped on a substrate surface.
【図2】この発明に係る基板表面の汚染度検出装置の一
実施形態の説明図。FIG. 2 is an explanatory view of an embodiment of a substrate surface contamination degree detecting apparatus according to the present invention.
【図3】平行光線の照射によって発生した散乱リングの
一例の平面図。FIG. 3 is a plan view of an example of a scattering ring generated by irradiation of parallel rays.
【図4】散乱リングの形態と汚染状況との関係を示した
グラフ。FIG. 4 is a graph showing the relationship between the shape of a scattering ring and the state of contamination.
【図5】カメラの上昇に伴って拡大する散乱リングの状
況を示した散乱リングの一例の平面図。FIG. 5 is a plan view of an example of the scattering ring showing a state of the scattering ring which expands as the camera is raised.
【図6】清浄な基板上において、液滴が時間の経過と集
合して行く状況を示した基板の平面図。FIG. 6 is a plan view of the substrate, showing a state in which droplets gather over time on a clean substrate.
【図7】汚染された基板上において、液滴が時間の経過
と集合して行く状況を示した基板の平面図。FIG. 7 is a plan view of a substrate showing a state in which droplets gather over time on a contaminated substrate.
【図8】基板の初期歪みを補正する方法を示した説明
図。FIG. 8 is an explanatory view showing a method for correcting initial distortion of a substrate.
【図9】横方向に基板を移動させてその全面を走査する
方法を示した説明図。FIG. 9 is an explanatory diagram showing a method of moving the substrate in the horizontal direction and scanning the entire surface thereof.
1 基板 2 液滴 θ 接触角 3 冷却プレート 4 小突起 5 冷却プレート制御部 6 光線照射装置 7 光源 8 放物面ミラー 9 平行光線 10 カメラ 11 モニター装置 12 画像処理装置 13 散乱リング 14 透明板 15 レーザー光 16 移動手段 DESCRIPTION OF SYMBOLS 1 Substrate 2 Droplet θ Contact angle 3 Cooling plate 4 Small projection 5 Cooling plate controller 6 Light irradiation device 7 Light source 8 Parabolic mirror 9 Parallel light 10 Camera 11 Monitor device 12 Image processing device 13 Scattering ring 14 Transparent plate 15 Laser Light 16 Transportation
Claims (7)
液滴を付着させ、該基板の上方あるいは下方からその微
小液滴に向けて平行光線を照射し、微小液滴からの散乱
光によって基板上方あるいは下方に生ずる散乱リングを
光学的手段によって観察し、その直径、リング幅、リン
グの歪み、散乱リングの消失時間から基板表面の汚染状
況を検出することを特徴とする基板表面の汚染度検出方
法。1. A method in which a large number of microdroplets are attached to the surface of a substrate to be inspected, and a parallel light beam is irradiated toward the microdroplets from above or below the substrate, and scattered light from the microdroplets is used. The degree of contamination of the substrate surface is characterized by observing the scattering ring generated above or below the substrate by optical means, and detecting the state of contamination of the substrate surface from its diameter, ring width, ring distortion, and disappearance time of the scattering ring. Detection method.
を有し、該小突起上に検査対象である基板を載置するよ
うにした平坦な冷却プレートと;前記冷却プレートの上
方に空間を隔てて位置し、前記冷却プレートに向けて平
行光線を照射する様にした光線照射装置と;冷却プレー
トと光線照射装置との間の空間に上下移動可能に位置し
た散乱光観測用カメラ;とからなり、前記散乱光観測用
カメラが捉えた散乱リングから検査対象である基板表面
の汚染状況を検出する様にしたことを特徴とする基板表
面の汚染度検出装置。2. A flat cooling plate having a cooling function and having a plurality of small projections on its surface, on which a substrate to be inspected is mounted; and A beam irradiator positioned at a space and configured to irradiate a parallel beam toward the cooling plate; a scattered light observation camera positioned vertically movable in a space between the cooling plate and the beam irradiator; Wherein the contamination state of the substrate surface to be inspected is detected from the scattering ring captured by the scattered light observation camera.
変化させて基板の全領域の散乱リングを観察することに
よって基板面内の汚染分布を検出することを特徴とする
請求項1記載の基板表面の汚染度検出方法。3. The contamination distribution in the substrate surface is detected by continuously changing the observation position of the scattering ring up and down and observing the scattering ring in the entire region of the substrate. A method for detecting the degree of contamination on the substrate surface.
平坦度を測定しておき、バックグラウンドデータとして
基板の初期歪みを補正するようにしたことを特徴とする
請求項1記載の基板表面の汚染度検出方法。4. The degree of contamination on the substrate surface according to claim 1, wherein the flatness of the substrate is measured in advance by the Newton ring method, and the initial distortion of the substrate is corrected as background data. Detection method.
微小液滴を形成させることを特徴とする請求項1記載の
基板表面の汚染度検出方法。5. The method according to claim 1, wherein the substrate is cooled to form fine droplets on the surface of the substrate.
基板を横方向に移動させるから散乱リングの観察を行う
ことを特徴とする請求項1記載の基板表面の汚染度検出
方法。6. The observation position of the scattering ring is fixed,
2. The method according to claim 1, wherein the scattering ring is observed because the substrate is moved in the lateral direction.
て行うことを特徴とする請求項1記載の基板表面の汚染
度検出方法。7. The method according to claim 1, wherein the formation of the microdroplets is performed by spraying a mist.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6192398A JPH11248617A (en) | 1998-02-27 | 1998-02-27 | Contamination degree detecting method for substrate surface, and device therefor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6192398A JPH11248617A (en) | 1998-02-27 | 1998-02-27 | Contamination degree detecting method for substrate surface, and device therefor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH11248617A true JPH11248617A (en) | 1999-09-17 |
Family
ID=13185176
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP6192398A Pending JPH11248617A (en) | 1998-02-27 | 1998-02-27 | Contamination degree detecting method for substrate surface, and device therefor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH11248617A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2013111578A (en) * | 2011-11-30 | 2013-06-10 | Corning Inc | Device and method of determining surface compliance for glass surface |
| JP2015068708A (en) * | 2013-09-27 | 2015-04-13 | 株式会社東芝 | Surface condition evaluation device and surface condition evaluation method |
-
1998
- 1998-02-27 JP JP6192398A patent/JPH11248617A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2013111578A (en) * | 2011-11-30 | 2013-06-10 | Corning Inc | Device and method of determining surface compliance for glass surface |
| JP2015068708A (en) * | 2013-09-27 | 2015-04-13 | 株式会社東芝 | Surface condition evaluation device and surface condition evaluation method |
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