JPH11261075A - 半導体装置およびその作製方法 - Google Patents

半導体装置およびその作製方法

Info

Publication number
JPH11261075A
JPH11261075A JP8294898A JP8294898A JPH11261075A JP H11261075 A JPH11261075 A JP H11261075A JP 8294898 A JP8294898 A JP 8294898A JP 8294898 A JP8294898 A JP 8294898A JP H11261075 A JPH11261075 A JP H11261075A
Authority
JP
Japan
Prior art keywords
layer
region
aluminum
semiconductor device
insulating film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP8294898A
Other languages
English (en)
Japanese (ja)
Other versions
JPH11261075A5 (cs
Inventor
Shunpei Yamazaki
舜平 山崎
Hisashi Otani
久 大谷
Hideto Onuma
英人 大沼
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Energy Laboratory Co Ltd
Original Assignee
Semiconductor Energy Laboratory Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Energy Laboratory Co Ltd filed Critical Semiconductor Energy Laboratory Co Ltd
Priority to JP8294898A priority Critical patent/JPH11261075A/ja
Priority to US09/210,781 priority patent/US6369410B1/en
Publication of JPH11261075A publication Critical patent/JPH11261075A/ja
Priority to US10/101,830 priority patent/US6613614B2/en
Publication of JPH11261075A5 publication Critical patent/JPH11261075A5/ja
Withdrawn legal-status Critical Current

Links

Landscapes

  • Thin Film Transistor (AREA)
JP8294898A 1997-12-15 1998-03-13 半導体装置およびその作製方法 Withdrawn JPH11261075A (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP8294898A JPH11261075A (ja) 1998-03-13 1998-03-13 半導体装置およびその作製方法
US09/210,781 US6369410B1 (en) 1997-12-15 1998-12-15 Semiconductor device and method of manufacturing the semiconductor device
US10/101,830 US6613614B2 (en) 1997-12-15 2002-03-21 Semiconductor device and method of manufacturing the semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8294898A JPH11261075A (ja) 1998-03-13 1998-03-13 半導体装置およびその作製方法

Publications (2)

Publication Number Publication Date
JPH11261075A true JPH11261075A (ja) 1999-09-24
JPH11261075A5 JPH11261075A5 (cs) 2005-07-28

Family

ID=13788453

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8294898A Withdrawn JPH11261075A (ja) 1997-12-15 1998-03-13 半導体装置およびその作製方法

Country Status (1)

Country Link
JP (1) JPH11261075A (cs)

Cited By (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002057165A (ja) * 2000-05-29 2002-02-22 Semiconductor Energy Lab Co Ltd 半導体装置の作製方法
US6759678B2 (en) 2000-03-06 2004-07-06 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US7218361B2 (en) 2000-03-27 2007-05-15 Semiconductor Energy Laboratory Co., Ltd. Semiconductor display device and manufacturing method thereof
KR100792780B1 (ko) * 2006-06-09 2008-01-14 학교법인 포항공과대학교 저전압 구동의 플렉서블 유기 박막 트랜지스터 및 이의제조방법
JP2008311649A (ja) * 2007-06-13 2008-12-25 Samsung Sdi Co Ltd 薄膜トランジスタ、その製造方法、及びこれを含む有機電界発光表示装置
JP2009049419A (ja) * 2007-08-22 2009-03-05 Samsung Sdi Co Ltd 薄膜トランジスタ、これを具備した有機電界発光表示装置、およびこれらの製造方法
JP2012080110A (ja) * 2011-11-18 2012-04-19 Semiconductor Energy Lab Co Ltd 半導体装置
US8283668B2 (en) 2007-08-23 2012-10-09 Samsung Display Co., Ltd. Thin film transistor, method of fabricating the same, and organic light emitting diode display device including the same
US8318523B2 (en) 2008-04-11 2012-11-27 Samsung Display Co., Ltd. Thin film transistor, method of fabricating the same and organic light emitting diode display device having the same
US8436360B2 (en) 2008-03-27 2013-05-07 Samsung Display Co., Ltd. Thin film transistor, method of fabricating the same, and organic lighting emitting diode display device including the same
JPWO2011142088A1 (ja) * 2010-05-14 2013-07-22 パナソニック株式会社 フレキシブル半導体装置およびその製造方法ならびに画像表示装置
CN103474471A (zh) * 2013-08-29 2013-12-25 京东方科技集团股份有限公司 薄膜晶体管及制备方法、阵列基板及制备方法、显示装置
US8790967B2 (en) 2007-05-31 2014-07-29 Samsung Display Co., Ltd. Method of fabricating polycrystalline silicon layer, TFT fabricated using the same, method of fabricating TFT, and organic light emitting diode display device having the same

Cited By (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6759678B2 (en) 2000-03-06 2004-07-06 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US7112817B2 (en) 2000-03-06 2006-09-26 Semiconductor Energy Laboratory Co., Ltd. Electronic appliance including transistor having LDD region
KR100767612B1 (ko) * 2000-03-06 2007-10-17 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 제조 방법
US9601515B2 (en) 2000-03-06 2017-03-21 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US8124973B2 (en) 2000-03-06 2012-02-28 Semiconductor Energy Laboratory Co., Ltd. Electronic appliance including transistor having LDD region
US8772778B2 (en) 2000-03-06 2014-07-08 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US7218361B2 (en) 2000-03-27 2007-05-15 Semiconductor Energy Laboratory Co., Ltd. Semiconductor display device and manufacturing method thereof
US7486344B2 (en) 2000-03-27 2009-02-03 Semiconductor Energy Laboratory Co., Ltd. Semiconductor display device and manufacturing method thereof
JP2002057165A (ja) * 2000-05-29 2002-02-22 Semiconductor Energy Lab Co Ltd 半導体装置の作製方法
KR100792780B1 (ko) * 2006-06-09 2008-01-14 학교법인 포항공과대학교 저전압 구동의 플렉서블 유기 박막 트랜지스터 및 이의제조방법
US8790967B2 (en) 2007-05-31 2014-07-29 Samsung Display Co., Ltd. Method of fabricating polycrystalline silicon layer, TFT fabricated using the same, method of fabricating TFT, and organic light emitting diode display device having the same
JP2008311649A (ja) * 2007-06-13 2008-12-25 Samsung Sdi Co Ltd 薄膜トランジスタ、その製造方法、及びこれを含む有機電界発光表示装置
US8513669B2 (en) 2007-08-22 2013-08-20 Samsung Display Co., Ltd. Thin film transistor including metal or metal silicide structure in contact with semiconductor layer and organic light emitting diode display device having the thin film transistor
JP2009049419A (ja) * 2007-08-22 2009-03-05 Samsung Sdi Co Ltd 薄膜トランジスタ、これを具備した有機電界発光表示装置、およびこれらの製造方法
US8283668B2 (en) 2007-08-23 2012-10-09 Samsung Display Co., Ltd. Thin film transistor, method of fabricating the same, and organic light emitting diode display device including the same
US8436360B2 (en) 2008-03-27 2013-05-07 Samsung Display Co., Ltd. Thin film transistor, method of fabricating the same, and organic lighting emitting diode display device including the same
US8318523B2 (en) 2008-04-11 2012-11-27 Samsung Display Co., Ltd. Thin film transistor, method of fabricating the same and organic light emitting diode display device having the same
JPWO2011142088A1 (ja) * 2010-05-14 2013-07-22 パナソニック株式会社 フレキシブル半導体装置およびその製造方法ならびに画像表示装置
JP2012080110A (ja) * 2011-11-18 2012-04-19 Semiconductor Energy Lab Co Ltd 半導体装置
CN103474471A (zh) * 2013-08-29 2013-12-25 京东方科技集团股份有限公司 薄膜晶体管及制备方法、阵列基板及制备方法、显示装置
US9455324B2 (en) 2013-08-29 2016-09-27 Boe Technology Group Co., Ltd. Thin film transistor and method of fabricating the same, array substrate and method of fabricating the same, and display device

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