JPH11261100A - 光半導体装置の製造方法 - Google Patents

光半導体装置の製造方法

Info

Publication number
JPH11261100A
JPH11261100A JP10056446A JP5644698A JPH11261100A JP H11261100 A JPH11261100 A JP H11261100A JP 10056446 A JP10056446 A JP 10056446A JP 5644698 A JP5644698 A JP 5644698A JP H11261100 A JPH11261100 A JP H11261100A
Authority
JP
Japan
Prior art keywords
layer
mesa structure
semiconductor device
manufacturing
inp
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP10056446A
Other languages
English (en)
Japanese (ja)
Other versions
JPH11261100A5 (2
Inventor
Daisuke Suzuki
大輔 鈴木
Tatsuya Kimura
達也 木村
Toru Takiguchi
透 瀧口
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP10056446A priority Critical patent/JPH11261100A/ja
Publication of JPH11261100A publication Critical patent/JPH11261100A/ja
Publication of JPH11261100A5 publication Critical patent/JPH11261100A5/ja
Pending legal-status Critical Current

Links

Landscapes

  • Drying Of Semiconductors (AREA)
  • Weting (AREA)
  • Semiconductor Lasers (AREA)
  • Light Receiving Elements (AREA)
JP10056446A 1998-03-09 1998-03-09 光半導体装置の製造方法 Pending JPH11261100A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10056446A JPH11261100A (ja) 1998-03-09 1998-03-09 光半導体装置の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10056446A JPH11261100A (ja) 1998-03-09 1998-03-09 光半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JPH11261100A true JPH11261100A (ja) 1999-09-24
JPH11261100A5 JPH11261100A5 (2) 2004-11-25

Family

ID=13027331

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10056446A Pending JPH11261100A (ja) 1998-03-09 1998-03-09 光半導体装置の製造方法

Country Status (1)

Country Link
JP (1) JPH11261100A (2)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6737718B2 (en) 2000-10-30 2004-05-18 Nec Corporation Semiconductor photodetector
JP2006066488A (ja) * 2004-08-25 2006-03-09 Mitsubishi Electric Corp 半導体受光素子およびその製造方法
JP2008053630A (ja) * 2006-08-28 2008-03-06 Mitsubishi Electric Corp 半導体レーザ素子の製造方法
JP2008085180A (ja) * 2006-09-28 2008-04-10 Sumitomo Electric Ind Ltd 半導体光素子を作製する方法
WO2020090078A1 (ja) * 2018-11-01 2020-05-07 三菱電機株式会社 光半導体装置、および光半導体装置の製造方法
CN111541149A (zh) * 2020-05-15 2020-08-14 陕西源杰半导体技术有限公司 一种10g抗反射激光器及其制备工艺

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6737718B2 (en) 2000-10-30 2004-05-18 Nec Corporation Semiconductor photodetector
JP2006066488A (ja) * 2004-08-25 2006-03-09 Mitsubishi Electric Corp 半導体受光素子およびその製造方法
JP2008053630A (ja) * 2006-08-28 2008-03-06 Mitsubishi Electric Corp 半導体レーザ素子の製造方法
JP2008085180A (ja) * 2006-09-28 2008-04-10 Sumitomo Electric Ind Ltd 半導体光素子を作製する方法
WO2020090078A1 (ja) * 2018-11-01 2020-05-07 三菱電機株式会社 光半導体装置、および光半導体装置の製造方法
JPWO2020090078A1 (ja) * 2018-11-01 2021-09-02 三菱電機株式会社 光半導体装置、および光半導体装置の製造方法
CN111541149A (zh) * 2020-05-15 2020-08-14 陕西源杰半导体技术有限公司 一种10g抗反射激光器及其制备工艺

Similar Documents

Publication Publication Date Title
US5260230A (en) Method of manufacturing buried heterostructure semiconductor laser
US9257815B1 (en) Optical semiconductor device
KR100251587B1 (ko) 반도체레이저장치 및 반도체레이저장치의 제조방법(semiconductor laser device and fabricationg method of semiconductor laser device)
US6556605B1 (en) Method and device for preventing zinc/iron interaction in a semiconductor laser
JP3283802B2 (ja) 選択成長法を用いた半導体層及びその成長方法、選択成長法を用いた窒化物系半導体層及びその成長方法、窒化物系半導体発光素子とその製造方法
US5665612A (en) Method for fabricating a planar buried heterostructure laser diode
JP4002422B2 (ja) 半導体素子およびその作製方法
JPH11261100A (ja) 光半導体装置の製造方法
JP4537549B2 (ja) 化合物半導体装置の製造方法
CN112217097A (zh) 光通信半导体激光器及其含铝量子阱有源层对接生长方法
JPH10335756A (ja) 半導体レーザの製造方法
JP2804197B2 (ja) 半導体レーザの製造方法
JP2669142B2 (ja) ウィンドウ構造半導体レーザの製造方法
JPH10326907A (ja) 受光素子，及びその製造方法
JPH07111361A (ja) 埋込型半導体レーザ素子及びその製造方法
JPWO2005031829A1 (ja) 半導体素子および半導体集積素子
JP2865160B2 (ja) 半導体レーザの製造方法
JPH0690061A (ja) 半導体発光素子の製造方法
JP5025898B2 (ja) 半導体レーザ素子の製造方法
JP4415480B2 (ja) 構造基板および半導体装置の製造方法
KR100283958B1 (ko) 레이저 다이오드 제작 방법
JP3156682B2 (ja) 半導体素子及びその製造方法
JPS61101088A (ja) 半導体レ−ザの製造方法
JP5834821B2 (ja) 光半導体装置の製造方法
JPH0983060A (ja) 半導体レーザの製造方法

Legal Events

Date Code Title Description
A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20060912

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20061010

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20061208

A02 Decision of refusal

Free format text: JAPANESE INTERMEDIATE CODE: A02

Effective date: 20070703