JPH11265848A - 投影露光装置及び露光方法 - Google Patents

投影露光装置及び露光方法

Info

Publication number
JPH11265848A
JPH11265848A JP10362248A JP36224898A JPH11265848A JP H11265848 A JPH11265848 A JP H11265848A JP 10362248 A JP10362248 A JP 10362248A JP 36224898 A JP36224898 A JP 36224898A JP H11265848 A JPH11265848 A JP H11265848A
Authority
JP
Japan
Prior art keywords
objective lens
exposure apparatus
projection exposure
objective
image
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP10362248A
Other languages
English (en)
Japanese (ja)
Other versions
JPH11265848A5 (2
Inventor
Gerhard Fuerter
ゲルハルト・フュルター
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Carl Zeiss SMT GmbH
Carl Zeiss AG
Original Assignee
Carl Zeiss SMT GmbH
Carl Zeiss AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Carl Zeiss SMT GmbH, Carl Zeiss AG filed Critical Carl Zeiss SMT GmbH
Publication of JPH11265848A publication Critical patent/JPH11265848A/ja
Publication of JPH11265848A5 publication Critical patent/JPH11265848A5/ja
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/7095—Materials, e.g. materials for housing, stage or other support having particular properties, e.g. weight, strength, conductivity, thermal expansion coefficient
    • G03F7/70958—Optical materials or coatings, e.g. with particular transmittance, reflectance or anti-reflection properties
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70191—Optical correction elements, filters or phase plates for controlling intensity, wavelength, polarisation, phase or the like
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70225—Optical aspects of catadioptric systems, i.e. comprising reflective and refractive elements
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70241—Optical aspects of refractive lens systems, i.e. comprising only refractive elements
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70275—Multiple projection paths, e.g. array of projection systems, microlens projection systems or tandem projection systems
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70358—Scanning exposure, i.e. relative movement of patterned beam and workpiece during imaging
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
    • G03F7/70475—Stitching, i.e. connecting image fields to produce a device field, the field occupied by a device such as a memory chip, processor chip, CCD, flat panel display
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces
    • G03F7/70733—Handling masks and workpieces, e.g. exchange of workpiece or mask, transport of workpiece or mask
    • G03F7/70741—Handling masks outside exposure position, e.g. reticle libraries
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces
    • G03F7/70791—Large workpieces, e.g. glass substrates for flat panel displays or solar panels

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Sustainable Development (AREA)
  • Engineering & Computer Science (AREA)
  • Health & Medical Sciences (AREA)
  • Library & Information Science (AREA)
  • Environmental & Geological Engineering (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Lenses (AREA)
  • Silver Salt Photography Or Processing Solution Therefor (AREA)
JP10362248A 1997-12-20 1998-12-21 投影露光装置及び露光方法 Pending JPH11265848A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE19757074.7 1997-12-20
DE19757074A DE19757074A1 (de) 1997-12-20 1997-12-20 Projektionsbelichtungsanlage und Belichtungsverfahren

Publications (2)

Publication Number Publication Date
JPH11265848A true JPH11265848A (ja) 1999-09-28
JPH11265848A5 JPH11265848A5 (2) 2006-02-16

Family

ID=7852873

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10362248A Pending JPH11265848A (ja) 1997-12-20 1998-12-21 投影露光装置及び露光方法

Country Status (6)

Country Link
US (1) US6512573B2 (2)
EP (1) EP0926556A3 (2)
JP (1) JPH11265848A (2)
KR (1) KR100588005B1 (2)
DE (1) DE19757074A1 (2)
TW (1) TW512257B (2)

Cited By (15)

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WO2007094235A1 (ja) 2006-02-16 2007-08-23 Nikon Corporation 露光方法、露光装置、フォトマスク及びフォトマスクの製造方法
WO2007094198A1 (ja) * 2006-02-16 2007-08-23 Nikon Corporation 投影光学系、露光装置、露光方法、ディスプレイの製造方法、マスク及びマスクの製造方法
WO2007108420A1 (ja) 2006-03-20 2007-09-27 Nikon Corporation 走査型露光装置、マイクロデバイスの製造方法、マスク、投影光学装置、及びマスクの製造方法
WO2007119292A1 (ja) 2006-03-20 2007-10-25 Nikon Corporation 反射屈折投影光学系、反射屈折光学装置、走査露光装置、マイクロデバイスの製造方法
JP2008166814A (ja) * 2007-01-04 2008-07-17 Nikon Corp 投影光学装置、投影露光装置、露光方法、及びデバイス製造方法
JP2008166815A (ja) * 2007-01-04 2008-07-17 Nikon Corp 投影光学装置、露光方法及び装置、フォトマスク、並びにデバイス及びフォトマスクの製造方法
WO2008108123A1 (ja) * 2007-03-05 2008-09-12 Nikon Corporation 反射屈折投影光学系、投影光学装置、及び走査型露光装置
JP2008216554A (ja) * 2007-03-02 2008-09-18 Nikon Corp 温度測定装置、走査型露光装置、露光方法及びデバイスの製造方法
JP2009008969A (ja) * 2007-06-29 2009-01-15 Nikon Corp 投影光学装置、露光装置、デバイス製造方法、像面情報検出装置、および投影光学系の調整方法
JP2009151298A (ja) * 2007-12-20 2009-07-09 Nikon Corp 露光方法及び装置、並びにデバイス製造方法
JP2009217244A (ja) * 2008-02-15 2009-09-24 Canon Inc 露光装置
KR20100106302A (ko) 2008-01-17 2010-10-01 가부시키가이샤 니콘 노광방법 및 장치 및 디바이스 제조방법
JP2012220592A (ja) * 2011-04-05 2012-11-12 V Technology Co Ltd マイクロレンズアレイを使用した露光装置
JPWO2011129369A1 (ja) * 2010-04-13 2013-07-18 株式会社ニコン 露光装置、基板処理装置及びデバイス製造方法
US8654307B2 (en) 2006-03-20 2014-02-18 Nikon Corporation Scanning type exposure apparatus, method of manufacturing micro-apparatus, mask, projection optical apparatus, and method of manufacturing mask

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US7061584B2 (en) * 2001-03-19 2006-06-13 Dmetrix, Inc. Multi-axis projection imaging system
US20040223199A1 (en) * 2003-05-06 2004-11-11 Olszak Artur G. Holographic single axis illumination for multi-axis imaging system
KR100729263B1 (ko) * 2005-07-14 2007-06-15 삼성전자주식회사 기판 노광 장치
JP4998803B2 (ja) * 2006-04-14 2012-08-15 株式会社ニコン 露光装置、デバイス製造方法、および露光方法
WO2007119514A1 (ja) * 2006-04-17 2007-10-25 Nikon Corporation 照明光学装置、露光装置、およびデバイス製造方法
TWI432914B (zh) * 2007-01-04 2014-04-01 尼康股份有限公司 投影光學裝置、投影曝光裝置、曝光方法、以及元件製造方法
US8253923B1 (en) 2008-09-23 2012-08-28 Pinebrook Imaging Technology, Ltd. Optical imaging writer system
US9405203B2 (en) 2008-09-23 2016-08-02 Applied Materials, Inc. Pixel blending for multiple charged-particle beam lithography
US8670106B2 (en) 2008-09-23 2014-03-11 Pinebrook Imaging, Inc. Optical imaging writer system
US9025136B2 (en) * 2008-09-23 2015-05-05 Applied Materials, Inc. System and method for manufacturing three dimensional integrated circuits
US9507271B1 (en) * 2008-12-17 2016-11-29 Applied Materials, Inc. System and method for manufacturing multiple light emitting diodes in parallel
US8957512B2 (en) 2012-06-19 2015-02-17 Xilinx, Inc. Oversized interposer
US8869088B1 (en) 2012-06-27 2014-10-21 Xilinx, Inc. Oversized interposer formed from a multi-pattern region mask
US9026872B2 (en) 2012-08-16 2015-05-05 Xilinx, Inc. Flexible sized die for use in multi-die integrated circuit
US9547034B2 (en) 2013-07-03 2017-01-17 Xilinx, Inc. Monolithic integrated circuit die having modular die regions stitched together
CN104570610B (zh) * 2013-10-11 2017-02-15 上海微电子装备有限公司 投影曝光装置
US9915869B1 (en) 2014-07-01 2018-03-13 Xilinx, Inc. Single mask set used for interposer fabrication of multiple products
US10712671B2 (en) 2016-05-19 2020-07-14 Nikon Corporation Dense line extreme ultraviolet lithography system with distortion matching
US10295911B2 (en) 2016-05-19 2019-05-21 Nikon Corporation Extreme ultraviolet lithography system that utilizes pattern stitching
US11067900B2 (en) 2016-05-19 2021-07-20 Nikon Corporation Dense line extreme ultraviolet lithography system with distortion matching
US10527956B2 (en) 2017-03-24 2020-01-07 Nikon Corporation Temperature controlled heat transfer frame for pellicle
CN113050381B (zh) * 2019-12-27 2022-04-26 上海微电子装备（集团）股份有限公司 一种拼接物镜的剂量控制装置、方法和曝光设备
WO2023282214A1 (ja) * 2021-07-05 2023-01-12 株式会社ニコン 空間光変調ユニットおよび露光装置

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US8654310B2 (en) 2006-02-16 2014-02-18 Nikon Corporation Exposure method, exposure apparatus, photomask and method for manufacturing photomask
KR101404264B1 (ko) * 2006-02-16 2014-06-05 가부시키가이샤 니콘 노광방법, 노광장치, 포토마스크 및 포토마스크의 제조방법
CN101976018B (zh) 2006-02-16 2013-01-30 株式会社尼康 光罩及其制造方法
JP2007249169A (ja) * 2006-02-16 2007-09-27 Nikon Corp 露光方法、露光装置、フォトマスク及びフォトマスクの製造方法
WO2007094235A1 (ja) 2006-02-16 2007-08-23 Nikon Corporation 露光方法、露光装置、フォトマスク及びフォトマスクの製造方法
JP2013178535A (ja) * 2006-02-16 2013-09-09 Nikon Corp マスク及びマスクの製造方法
KR101415411B1 (ko) * 2006-02-16 2014-07-04 가부시키가이샤 니콘 투영 광학계, 노광 장치, 노광 방법, 디스플레이의 제조방법, 마스크 및 마스크의 제조 방법
US8305556B2 (en) 2006-02-16 2012-11-06 Nikon Corporation Projection optical system, exposure apparatus, exposure method, display manufacturing method, mask, and mask manufacturing method
US8867019B2 (en) 2006-02-16 2014-10-21 Nikon Corporation Projection optical system, exposure apparatus, exposure method, display manufacturing method, mask, and mask manufacturing method
US8159649B2 (en) 2006-02-16 2012-04-17 Nikon Corporation Exposure method, exposure apparatus, photomask and method for manufacturing photomask
WO2007094198A1 (ja) * 2006-02-16 2007-08-23 Nikon Corporation 投影光学系、露光装置、露光方法、ディスプレイの製造方法、マスク及びマスクの製造方法
JP5453806B2 (ja) * 2006-02-16 2014-03-26 株式会社ニコン 露光装置、露光方法及びディスプレイの製造方法
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TW512257B (en) 2002-12-01
US6512573B2 (en) 2003-01-28
US20020039180A1 (en) 2002-04-04
KR19990062823A (ko) 1999-07-26
EP0926556A2 (de) 1999-06-30
KR100588005B1 (ko) 2006-11-30
EP0926556A3 (de) 2000-12-27

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