JPH11282012A5

JPH11282012A5 -

Info

Publication number: JPH11282012A5
Application number: JP1998084660A
Authority: JP
Filing date: 1998-03-30
Publication date: 2004-08-05

Description

【発明の名称】アクティブマトリクス基板および表示装置[Title of Invention] Active matrix substrate and display device

【０００１】
【発明の属する技術分野】
本発明は、駆動回路内蔵型のアクティブマトリクス基板、およびそれを用いた表示装置に関するものである。さらに詳しくは、アクティブマトリクス基板の端子構造に関するものである。[0001]
[Technical Field to which the Invention Belongs]
The present invention relates to an active matrix substrate with a built-in driving circuit and a display device using the same, and more particularly to a terminal structure of the active matrix substrate.

【０００６】
【課題を解決するための手段】
上記課題を解決するために、本発明では、走査線およびデータ線に接続する画素スイッチング用の薄膜トランジスタと、該薄膜トランジスタに接続してなる画素電極と、前記走査線および前記データ線に信号出力する走査線駆動回路およびデータ線駆動回路と、該駆動回路に信号供給する複数の信号配線とを有し、前記薄膜トランジスタは、ゲート電極と、第１の層間絶縁膜の第１のコンタクトホールを介して前記データ線に電気的に接続するソース領域と、前記第１の層間絶縁膜の第２のコンタクトホールを介してドレイン電極に電気的に接続するドレイン領域とを備え、前記ドレイン電極には、前記第１の層間絶縁膜の上層側に形成された第２の層間絶縁膜の第３のコンタクトホールを介して前記画素電極が電気的に接続するアクティブマトリクス基板の製造方法において、
前記走査線、前記データ線の少なくともいずれかの配線同士を電気的に接続する短絡用配線を形成する工程と、前記第１の層間絶縁膜に前記短絡用配線の切断予定部分を露出させる第１の切断用孔を形成する工程と、ペルヒドロポリシラザンまたはこれを含む組成物の塗布膜を焼成した絶縁膜を用いて前記第２の層間絶縁膜を形成する工程と、前記第２の層間絶縁膜に前記第１の切断用孔と重なる位置に第２の切断用孔を形成して前記短絡用配線の切断予定部分を露出させる工程と、前記第１の切断用孔および前記第２の切断用孔を介して前記短絡用配線を前記切断予定部分で切断する工程とを有することを特徴とする。[0006]
[Means for solving the problem]
In order to achieve the above object, the present invention provides a method for manufacturing an active matrix substrate, the active matrix substrate comprising: thin film transistors for pixel switching connected to scanning lines and data lines; pixel electrodes connected to the thin film transistors; a scanning line drive circuit and a data line drive circuit for outputting signals to the scanning lines and the data lines; and a plurality of signal wirings for supplying signals to the drive circuits, the thin film transistors comprising: a gate electrode; a source region electrically connected to the data line via a first contact hole in a first interlayer insulating film; and a drain region electrically connected to a drain electrode via a second contact hole in the first interlayer insulating film, the drain electrode being electrically connected to the pixel electrode via a third contact hole in a second interlayer insulating film formed on an upper side of the first interlayer insulating film, the method comprising:
The method includes the steps of: forming a short-circuit wiring that electrically connects at least one of the scanning lines and the data lines; forming a first cutting hole in the first interlayer insulating film to expose a portion of the short-circuit wiring that is to be cut; forming the second interlayer insulating film using an insulating film obtained by baking a coating film of perhydropolysilazane or a composition containing perhydropolysilazane; forming a second cutting hole in the second interlayer insulating film at a position overlapping the first cutting hole to expose the portion of the short-circuit wiring that is to be cut; and cutting the short-circuit wiring at the portion that is to be cut via the first cutting hole and the second cutting hole.

【００６７】
なお、本発明は上記実施例に限定されることなく、本発明の要旨の範囲内で種々変形した形態で実施が可能である。たとえば、本発明は上述の各種の液晶表示装置に限らず、エレクトロルミネッセンス（ＥＬ）表示装置、プラズマ表示装置にも適用できるものである。[0067]
The present invention is not limited to the above-described embodiments, and various modifications can be made within the scope of the present invention. For example, the present invention is not limited to the various liquid crystal display devices described above, but can also be applied to electroluminescence (EL) display devices and plasma display devices.

Claims

an active matrix substrate comprising: pixel-switching thin film transistors connected to scanning lines and data lines; pixel electrodes connected to the thin film transistors; a drive circuit for outputting signals to the scanning lines or the data lines; a plurality of signal wirings for supplying signals to the drive circuit; and terminals electrically connected to the signal wirings, the thin film transistors comprising a channel region facing a gate electrode via a gate insulating film; a source region electrically connected to the data line via a contact hole in a first interlayer insulating film; and a drain region electrically connected to the pixel electrode via a contact hole in the first interlayer insulating film and a second interlayer insulating film formed on the surface of the first interlayer insulating film;
the second interlayer insulating film comprises an insulating film obtained by baking a coating film of perhydropolysilazane or a composition containing perhydropolysilazane;
the terminal comprises a first under-pad wiring made of a metal film between the gate insulating film and the first interlayer insulating film, a second under-pad wiring made of a metal film connected to the first under-pad wiring through a contact hole in the first interlayer insulating film, and a pad electrically connected to the second under-pad wiring through a contact hole in the second interlayer insulating film.

2. The active matrix substrate according to claim 1, wherein the data lines and the second under-pad wiring are made of an aluminum film containing aluminum as a main component, and the scanning lines, the gate electrodes and the first under-pad wiring are made of a tantalum film.

3. The active matrix substrate according to claim 1, wherein the second interlayer insulating film comprises an insulating film obtained by baking a coating film of perhydropolysilazane or a composition containing perhydropolysilazane, and an insulating film formed on a surface of the insulating film by a CVD method.

2. The active matrix substrate according to claim 1, further comprising: a second under-pad wiring made of a metal film formed between the first interlayer insulating film and the second interlayer insulating film at the same time as the data line, the second under-pad wiring being connected to the first under-pad wiring via a contact hole in the first interlayer insulating film.

2. The active matrix substrate according to claim 1, further comprising: a pad formed on the surface of the second interlayer insulating film simultaneously with the pixel electrode, the pad being electrically connected to the second under-pad wiring through a contact hole in the second interlayer insulating film.

A display device using an active matrix substrate defined in any one of claims 1 to 5.

2. The active matrix substrate according to claim 1, wherein the scanning lines, the gate electrodes and the first under-pad wiring are made of an aluminum film containing aluminum as a main component.

an active matrix substrate comprising: pixel-switching thin film transistors connected to scanning lines and data lines; pixel electrodes connected to the thin film transistors; a drive circuit for outputting signals to the scanning lines or the data lines; a plurality of signal wirings for supplying signals to the drive circuit; and terminals electrically connected to the signal wirings, the thin film transistors comprising a channel region facing a gate electrode via a gate insulating film; a source region electrically connected to the data line via a contact hole in a first interlayer insulating film; and a drain region electrically connected to the pixel electrode via a contact hole in the first interlayer insulating film and a second interlayer insulating film formed on the surface of the first interlayer insulating film;
the second interlayer insulating film comprises an insulating film obtained by baking a coating film of an inorganic polymer or a composition containing the same;
the terminal comprises a first under-pad wiring made of a metal film between the gate insulating film and the first interlayer insulating film, a second under-pad wiring made of a metal film connected to the first under-pad wiring through a contact hole in the first interlayer insulating film, and a pad electrically connected to the second under-pad wiring through a contact hole in the second interlayer insulating film.