JPH11284191A5

JPH11284191A5 -

Info

Publication number: JPH11284191A5
Application number: JP1998084656A
Authority: JP
Filing date: 1998-03-30
Publication date: 2004-08-05
Anticipated expiration: 2018-03-30

Description

【発明の名称】薄膜トランジスタおよびその製造方法[Title of Invention] Thin film transistor and its manufacturing method

【００１１】
このような構成の薄膜トランジスタの製造方法では、たとえば、前記チャネル形成領域を形成するためのアモルファス半導体膜に結晶化処理を行って前記基板の面外方向に柱軸を向ける柱状構造の多結晶半導体膜を形成した後、該多結晶半導体膜をパターニングして柱軸に略平行な側端面を露出させ、しかる後に、前記ゲート絶縁膜および前記ゲート電極を順次形成する（請求項５）。[0011]
In a method for manufacturing a thin film transistor having such a configuration, for example, a crystallization process is performed on an amorphous semiconductor film for forming the channel formation region to form a polycrystalline semiconductor film having a columnar structure with its column axis directed in an out-of-plane direction of the substrate, and then the polycrystalline semiconductor film is patterned to expose side end faces approximately parallel to the column axis, and thereafter the gate insulating film and the gate electrode are formed in this order (claim 5).

Claims

A thin film transistor having a channel formation region on a substrate, the channel formation region forming a channel between a first region which is one of source and drain regions and a second region which is the other of source and drain regions, and a gate electrode facing the channel formation region via a gate insulating film,
the channel formation region is formed by a polycrystalline semiconductor film having a columnar structure formed by a crystallization process on an amorphous semiconductor film, the columnar axis of which is oriented in an out-of-plane direction of the substrate,
The thin film transistor is characterized in that the gate electrode faces a side end face of the polycrystalline semiconductor film constituting the channel formation region, the side end face being substantially parallel to a column axis, via the gate insulating film.

2. The thin film transistor according to claim 1, wherein the first region and the second region are composed of a lower semiconductor film and an upper semiconductor film formed on the lower and upper sides, respectively, of a polycrystalline semiconductor film constituting the channel formation region.

3. A thin film transistor according to claim 2, wherein the polycrystalline semiconductor film constituting the channel forming region and the upper semiconductor film have the same patterning shape.

4. The polycrystalline semiconductor film constituting the channel formation region according to claim 1, wherein a side end face forming a channel is located on a formation region of the lower semiconductor film,
A thin film transistor characterized in that an insulating film is provided between the side end face of the polycrystalline semiconductor film and the lower semiconductor film, and is slightly sandwiched between these films.

3. A method for manufacturing a thin film transistor according to claim 1, wherein a crystallization process is performed on an amorphous semiconductor film for forming the channel formation region to form a polycrystalline semiconductor film having a columnar structure with its column axis directed in an out-of-plane direction of the substrate, and then the polycrystalline semiconductor film is patterned to expose side end faces approximately parallel to the column axis, and thereafter the gate insulating film and the gate electrode are formed in this order.

4. A method for manufacturing a thin film transistor as defined in claim 3, characterized in that after forming semiconductor films for forming the channel formation region and the upper layer side semiconductor film in this order, the two semiconductor films are patterned collectively.

5. A method for manufacturing a thin film transistor as defined in claim 4, characterized in that after forming the lower layer side semiconductor film and the insulating film in this order, the insulating film is patterned into a predetermined shape, the polycrystalline semiconductor film that forms the channel formation region is formed on the entire surface of the substrate, and then the polycrystalline semiconductor film is patterned.

A thin film transistor having a channel formation region on a substrate, the channel formation region forming a channel between a first region which is one of source and drain regions and a second region which is the other of source and drain regions, and a gate electrode facing the channel formation region via a gate insulating film,
the channel formation region is made of a polycrystalline semiconductor film having a columnar structure with its column axis directed in an out-of-plane direction of the substrate,
The thin film transistor is characterized in that the gate electrode faces a side end face of the polycrystalline semiconductor film constituting the channel formation region, the side end face being substantially parallel to a column axis, via the gate insulating film.