JPH11284199A5

JPH11284199A5 -

Info

Publication number: JPH11284199A5
Application number: JP1998100643A
Authority: JP
Filing date: 1998-03-27
Publication date: 2005-09-15
Anticipated expiration: 2018-03-27

Claims

A semiconductor device having a TFT formed on a highly heat-resistant substrate,
a channel forming region of the TFT is made of a polysilicon film whose main orientation plane is the [111] plane;
A semiconductor device characterized in that germanium is present in the polysilicon film at a concentration of 1×10 ¹⁴ to 1×10 ²⁰ atoms/cm ³ , and the spin density in the polysilicon film is 5×10 ¹⁷ spins/cm ³ or less.

2. A semiconductor device according to claim 1, wherein said substrate having high heat resistance is made of one of quartz, silicon, ceramics, and crystallized glass.

3. The semiconductor device according to claim 1 , wherein the TFT is a bottom gate type TFT.

4. A video camera using the semiconductor device according to claim 1.

4. A still camera using the semiconductor device according to claim 1.

A projector using the semiconductor device according to claim 1 .

4. A projection TV using the semiconductor device according to claim 1.

4. A car navigation system using the semiconductor device according to claim 1.

4. A portable information terminal using the semiconductor device according to claim 1.

A gate electrode is formed on a highly heat-resistant substrate,
forming a gate insulating film on the gate electrode;
forming an amorphous silicon film on the gate insulating film ;
forming a germanium film on the amorphous silicon film ;
a first heat treatment at a temperature not exceeding 600° C. to convert the amorphous silicon film into a polysilicon film ;
a second heat treatment at a temperature exceeding 700° C. on the polysilicon film ;

11. The method for manufacturing a semiconductor device according to claim 10 , wherein the germanium film is formed by sputtering, plasma CVD, or low-pressure thermal CVD.

A gate electrode is formed on a highly heat-resistant substrate,
forming a gate insulating film on the gate electrode;
forming an amorphous silicon film on the gate insulating film;
a solution containing germanium is applied onto the amorphous silicon film by spin coating;
a first heat treatment at a temperature not exceeding 600° C. to convert the amorphous silicon film into a polysilicon film;
a second heat treatment at a temperature exceeding 700° C. on the polysilicon film;

13. The method for manufacturing a semiconductor device according to claim 12, wherein the germanium-containing solution is any one of germanium oxide, germanium chloride, germanium bromide, germanium sulfide, and germanium acetate.

A gate electrode is formed on a highly heat-resistant substrate,
forming a gate insulating film on the gate electrode;
forming an amorphous silicon film on the gate insulating film;
adding germanium to the amorphous silicon film by ion implantation, plasma doping, or laser doping;
a first heat treatment at a temperature not exceeding 600° C. to convert the amorphous silicon film into a polysilicon film;
a second heat treatment at a temperature exceeding 700° C. on the polysilicon film;

A gate electrode is formed on a highly heat-resistant substrate,
forming a gate insulating film on the gate electrode;
forming an amorphous silicon film on the gate insulating film using a gas containing germane;
a first heat treatment at a temperature not exceeding 600° C. to convert the amorphous silicon film into a polysilicon film;
a second heat treatment at a temperature exceeding 700° C. on the polysilicon film;

A base film is formed on a highly heat-resistant substrate,
forming a gate electrode on the base film;
forming a gate insulating film on the gate electrode;
forming an amorphous silicon film on the gate insulating film;
forming a germanium film on the amorphous silicon film;
a first heat treatment at a temperature not exceeding 600° C. to convert the amorphous silicon film into a polysilicon film;
removing the germanium film;
subjecting the polysilicon film to a second heat treatment at a temperature exceeding 700° C.;
forming a patterned insulating layer on the polysilicon film;
patterning the polysilicon film to form an active layer;
forming an interlayer insulating film covering the active layer and the patterned insulating layer;
a source wiring and a drain wiring connected to the active layer through contact holes are formed on the interlayer insulating film;

A base film is formed on a highly heat-resistant substrate,
forming a gate electrode on the base film;
forming a gate insulating film on the gate electrode;
forming a first amorphous silicon film on the gate insulating film;
forming a germanium film on the first amorphous silicon film;
a first heat treatment at a temperature not exceeding 600° C. to convert the first amorphous silicon film into a polysilicon film;
removing the germanium film;
subjecting the polysilicon film to a second heat treatment at a temperature exceeding 700° C.;
patterning the polysilicon film to form an active layer;
forming a patterned insulating layer on the active layer;
forming a second amorphous silicon film on the active layer and the patterned insulating layer;
forming a microcrystalline silicon film on the second amorphous silicon film;
forming a conductive film on the microcrystalline silicon film, and patterning the conductive film to form source wiring and drain wiring;
a step of etching the second amorphous silicon film and the microcrystalline silicon film using the source wiring and the drain wiring as a mask;

18. The method for manufacturing a semiconductor device according to claim 17, wherein the conductive film is formed using a material containing aluminum as a main component.

19. The method for manufacturing a semiconductor device according to claim 16, wherein the germanium film is formed by sputtering, plasma CVD, or low-pressure thermal CVD.

20. The method for manufacturing a semiconductor device according to claim 10 , wherein the first heat treatment is performed in a temperature range of 450 to 650[deg.] C.

21. The method for manufacturing a semiconductor device according to claim 10, wherein the first heat treatment is performed in an inert atmosphere or a hydrogen atmosphere.

21. The method for manufacturing a semiconductor device according to claim 10, wherein the first heat treatment is performed by furnace annealing, lamp annealing, or laser annealing.

23. The method for manufacturing a semiconductor device according to claim 10, wherein the second heat treatment is performed in a temperature range of 800 to 1050[deg.] C.

24. The method for manufacturing a semiconductor device according to claim 10, wherein the second heat treatment is performed in an oxidizing atmosphere or an atmosphere containing a halogen.

25. The method for manufacturing a semiconductor device according to claim 10, wherein the substrate having high heat resistance is made of any one of quartz, silicon, ceramics, and crystallized glass.