JPH11288785A5 - - Google Patents

Info

Publication number
JPH11288785A5
JPH11288785A5 JP1998101830A JP10183098A JPH11288785A5 JP H11288785 A5 JPH11288785 A5 JP H11288785A5 JP 1998101830 A JP1998101830 A JP 1998101830A JP 10183098 A JP10183098 A JP 10183098A JP H11288785 A5 JPH11288785 A5 JP H11288785A5
Authority
JP
Japan
Prior art keywords
porous layer
thin film
fine particles
functional thin
optical functional
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP1998101830A
Other languages
English (en)
Japanese (ja)
Other versions
JPH11288785A (ja
JP4164150B2 (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP10183098A priority Critical patent/JP4164150B2/ja
Priority claimed from JP10183098A external-priority patent/JP4164150B2/ja
Publication of JPH11288785A publication Critical patent/JPH11288785A/ja
Publication of JPH11288785A5 publication Critical patent/JPH11288785A5/ja
Application granted granted Critical
Publication of JP4164150B2 publication Critical patent/JP4164150B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

JP10183098A 1998-03-31 1998-03-31 光機能性薄膜の製造方法 Expired - Fee Related JP4164150B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10183098A JP4164150B2 (ja) 1998-03-31 1998-03-31 光機能性薄膜の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10183098A JP4164150B2 (ja) 1998-03-31 1998-03-31 光機能性薄膜の製造方法

Publications (3)

Publication Number Publication Date
JPH11288785A JPH11288785A (ja) 1999-10-19
JPH11288785A5 true JPH11288785A5 (mo) 2005-08-25
JP4164150B2 JP4164150B2 (ja) 2008-10-08

Family

ID=14311025

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10183098A Expired - Fee Related JP4164150B2 (ja) 1998-03-31 1998-03-31 光機能性薄膜の製造方法

Country Status (1)

Country Link
JP (1) JP4164150B2 (mo)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100345068B1 (ko) * 1999-06-21 2002-07-19 현대엘씨디주식회사 유기 전계발광 표시소자의 제조방법
TW545079B (en) * 2000-10-26 2003-08-01 Semiconductor Energy Lab Light emitting device
JP2002180294A (ja) * 2000-12-08 2002-06-26 Tokyo Electron Ltd 液処理装置、液処理方法
WO2004016049A1 (ja) * 2002-08-08 2004-02-19 Matsushita Electric Industrial Co., Ltd. 発光素子とその製造方法及びディスプレイデバイス
US7868331B2 (en) 2003-06-13 2011-01-11 Panasonic Corporation Light-emitting device having a metal oxide semiconductor porous body with an organic light-emitting material
EP1801182A4 (en) 2004-10-05 2010-06-02 Nippon Sheet Glass Co Ltd BODY EMITTING WITH FLUORESCENT LIGHT EMITTED, METHOD FOR THE PRODUCTION THEREOF, AND A FABRIC OR SUBSTANCE CONTAINING SUCH LIGHT EMITTING BODY
JP5335277B2 (ja) * 2008-05-07 2013-11-06 アイシン軽金属株式会社 蛍光発光体及びその製造方法
JP5393274B2 (ja) * 2009-06-10 2014-01-22 富士フイルム株式会社 微細構造体および発光素子

Similar Documents

Publication Publication Date Title
KR100741221B1 (ko) 횡형의 전계 방출 냉음극 장치와 그 제조방법, 및 진공마이크로-장치
CN105609535B (zh) 显示基板、显示装置及其制作方法
US6153075A (en) Methods using electrophoretically deposited patternable material
DE69814664T2 (de) Feldemissionsvorrichtungen
JPH11288785A5 (mo)
DE4024743C2 (de) Verwendung eines Siliciumsubstrats mit Schichtbereichen aus porösem, oxidierten Silicium für einen Thermokopf und Verfahren zur Herstellung dieses Siliciumsubstrats
JP2002093310A (ja) 電界放出型電子源および表示装置
KR830003748A (ko) 착색된 유리 포토마스크의 제조방법
JPH10148846A5 (mo)
JP3429768B2 (ja) 結晶シリコンからなる太陽電池の金属化方法
JP4164150B2 (ja) 光機能性薄膜の製造方法
JPH11297190A (ja) 積層型電子放出素子および画像表示装置
TWI326889B (en) Fluorescent lamp and manufacturing method thereof
JP3170679B2 (ja) 電界放出素子のマイクロチップ製造方法
JP3597739B2 (ja) 電界放出型冷陰極及びその製造方法
TWI288422B (en) Method and structure for substrate having inserted electrodes for flat display device and the device using the structure
DE4126954C2 (de) Verwendung einer mikroporösen Siliziumstruktur als photolumineszente Struktur
KR100874453B1 (ko) 전계 방출 표시장치의 전자 방출원 형성 방법
DE19803852A1 (de) Verfahren zur Herstellung beidseitig oxidierter Siliziumwafer
JPH07220619A (ja) 冷陰極電極構造とその製造方法
KR100824705B1 (ko) 플라즈마 디스플레이 패널 및 이의 제조방법
TW523775B (en) Field emission display and method of manufacture
JPS6019095B2 (ja) 螢光表示管用陽極基板の製造方法
JP2820584B2 (ja) アルミニウム材料の電解着色方法
JPH0322843Y2 (mo)