JPH11340219A5 - - Google Patents

Info

Publication number
JPH11340219A5
JPH11340219A5 JP1998144807A JP14480798A JPH11340219A5 JP H11340219 A5 JPH11340219 A5 JP H11340219A5 JP 1998144807 A JP1998144807 A JP 1998144807A JP 14480798 A JP14480798 A JP 14480798A JP H11340219 A5 JPH11340219 A5 JP H11340219A5
Authority
JP
Japan
Prior art keywords
alkoxysilanes
tri
tetra
mono
silica
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP1998144807A
Other languages
English (en)
Japanese (ja)
Other versions
JP4473352B2 (ja
JPH11340219A (ja
Filing date
Publication date
Priority claimed from JP14480798A external-priority patent/JP4473352B2/ja
Priority to JP14480798A priority Critical patent/JP4473352B2/ja
Application filed filed Critical
Priority to TW88106890A priority patent/TWI234787B/zh
Priority to US09/302,471 priority patent/US6875262B1/en
Priority to KR1019990018940A priority patent/KR100334550B1/ko
Publication of JPH11340219A publication Critical patent/JPH11340219A/ja
Priority to US11/067,622 priority patent/US7135064B2/en
Publication of JPH11340219A5 publication Critical patent/JPH11340219A5/ja
Publication of JP4473352B2 publication Critical patent/JP4473352B2/ja
Application granted granted Critical
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

JP14480798A 1998-05-26 1998-05-26 低比誘電率シリカ系被膜、それを形成するための塗布液、その塗布液の調製方法 Expired - Fee Related JP4473352B2 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP14480798A JP4473352B2 (ja) 1998-05-26 1998-05-26 低比誘電率シリカ系被膜、それを形成するための塗布液、その塗布液の調製方法
TW88106890A TWI234787B (en) 1998-05-26 1999-04-28 Silica-based coating film on substrate and coating solution therefor
US09/302,471 US6875262B1 (en) 1998-05-26 1999-04-30 Silica-based coating film on substrate and coating solution therefor
KR1019990018940A KR100334550B1 (ko) 1998-05-26 1999-05-25 기판상의 실리카계 피막 및 그 도포액
US11/067,622 US7135064B2 (en) 1998-05-26 2005-02-28 Silica-based coating film on substrate and coating solution therefor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14480798A JP4473352B2 (ja) 1998-05-26 1998-05-26 低比誘電率シリカ系被膜、それを形成するための塗布液、その塗布液の調製方法

Publications (3)

Publication Number Publication Date
JPH11340219A JPH11340219A (ja) 1999-12-10
JPH11340219A5 true JPH11340219A5 (2) 2005-10-06
JP4473352B2 JP4473352B2 (ja) 2010-06-02

Family

ID=15370929

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14480798A Expired - Fee Related JP4473352B2 (ja) 1998-05-26 1998-05-26 低比誘電率シリカ系被膜、それを形成するための塗布液、その塗布液の調製方法

Country Status (1)

Country Link
JP (1) JP4473352B2 (2)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE60138327D1 (de) * 2000-02-28 2009-05-28 Jsr Corp Zusammensetzung zur Filmerzeugung, Verfahren zur Filmerzeugung und Filme auf Basis von Siliciumoxid
US7128976B2 (en) 2000-04-10 2006-10-31 Jsr Corporation Composition for film formation, method of film formation, and silica-based film
EP1148105B1 (en) * 2000-04-17 2006-10-04 JSR Corporation Composition for film formation, method of film formation, and silica-based film
JP4568959B2 (ja) * 2000-05-22 2010-10-27 Ｊｓｒ株式会社 シリコーン含有組成物および膜形成用組成物
JP4572444B2 (ja) * 2000-05-22 2010-11-04 Ｊｓｒ株式会社 膜形成用組成物、膜の形成方法およびシリカ系膜
JP4530113B2 (ja) * 2000-07-06 2010-08-25 Ｊｓｒ株式会社 膜形成用組成物の製造方法、膜形成用組成物、膜の形成方法およびシリカ系膜
JP4507377B2 (ja) * 2000-09-25 2010-07-21 Ｊｓｒ株式会社 ケイ素ポリマー、膜形成用組成物および絶縁膜形成用材料
CN100568457C (zh) 2003-10-02 2009-12-09 株式会社半导体能源研究所 半导体装置的制造方法
JP4530130B2 (ja) * 2004-01-16 2010-08-25 Ｊｓｒ株式会社 ポリマー膜の形成方法
EP1705208B1 (en) 2004-01-16 2013-03-20 JSR Corporation Composition for forming insulating film, method for producing same, silica insulating film, and method for forming same
WO2005068538A1 (ja) 2004-01-16 2005-07-28 Jsr Corporation ポリマーの製造方法、ポリマー、絶縁膜形成用組成物、絶縁膜の製造方法、および絶縁膜
JP5110239B2 (ja) 2004-05-11 2012-12-26 Ｊｓｒ株式会社 有機シリカ系膜の形成方法、膜形成用組成物
JP5110238B2 (ja) 2004-05-11 2012-12-26 Ｊｓｒ株式会社 絶縁膜形成用組成物およびその製造方法、ならびにシリカ系絶縁膜およびその形成方法
JP4798329B2 (ja) * 2004-09-03 2011-10-19 Ｊｓｒ株式会社 絶縁膜形成用組成物、絶縁膜、およびその形成方法
JP5035819B2 (ja) * 2006-03-17 2012-09-26 国立大学法人信州大学 多孔質シリカ被膜の形成方法及びそれに用いられる多孔質シリカ形成用塗布液
US11198797B2 (en) * 2019-01-24 2021-12-14 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Chemical mechanical polishing compositions having stabilized abrasive particles for polishing dielectric substrates

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