JPH11354537A - エピタキシャルベ―スをもつたて形バイポ―ラトランジスタの真性コレクタの選択ド―ピングを行う方法 - Google Patents
エピタキシャルベ―スをもつたて形バイポ―ラトランジスタの真性コレクタの選択ド―ピングを行う方法Info
- Publication number
- JPH11354537A JPH11354537A JP11156065A JP15606599A JPH11354537A JP H11354537 A JPH11354537 A JP H11354537A JP 11156065 A JP11156065 A JP 11156065A JP 15606599 A JP15606599 A JP 15606599A JP H11354537 A JPH11354537 A JP H11354537A
- Authority
- JP
- Japan
- Prior art keywords
- window
- collector
- base
- implantation
- intrinsic collector
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000000034 method Methods 0.000 title claims description 18
- 239000007943 implant Substances 0.000 claims abstract description 37
- 239000002019 doping agent Substances 0.000 claims abstract description 21
- 238000000407 epitaxy Methods 0.000 claims abstract description 17
- 239000010410 layer Substances 0.000 claims description 60
- 238000002513 implantation Methods 0.000 claims description 31
- 229910052710 silicon Inorganic materials 0.000 claims description 24
- 239000010703 silicon Substances 0.000 claims description 24
- 229910000577 Silicon-germanium Inorganic materials 0.000 claims description 7
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 claims description 7
- 239000004065 semiconductor Substances 0.000 claims description 6
- 239000000758 substrate Substances 0.000 claims description 6
- 238000005530 etching Methods 0.000 claims description 3
- 239000011241 protective layer Substances 0.000 claims description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 23
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 18
- 239000011347 resin Substances 0.000 description 10
- 229920005989 resin Polymers 0.000 description 10
- 235000012239 silicon dioxide Nutrition 0.000 description 9
- 239000000377 silicon dioxide Substances 0.000 description 9
- 229910021417 amorphous silicon Inorganic materials 0.000 description 7
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 6
- 229910052581 Si3N4 Inorganic materials 0.000 description 6
- 229910052796 boron Inorganic materials 0.000 description 6
- 239000013078 crystal Substances 0.000 description 6
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 6
- 229920005591 polysilicon Polymers 0.000 description 6
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 6
- 238000005229 chemical vapour deposition Methods 0.000 description 5
- 238000000151 deposition Methods 0.000 description 5
- 230000008021 deposition Effects 0.000 description 5
- 229910052732 germanium Inorganic materials 0.000 description 5
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 5
- 239000000126 substance Substances 0.000 description 5
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 4
- 229910052785 arsenic Inorganic materials 0.000 description 4
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 4
- 230000007547 defect Effects 0.000 description 4
- 239000001257 hydrogen Substances 0.000 description 4
- 229910052739 hydrogen Inorganic materials 0.000 description 4
- 229910052698 phosphorus Inorganic materials 0.000 description 4
- 239000011574 phosphorus Substances 0.000 description 4
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 3
- RBFQJDQYXXHULB-UHFFFAOYSA-N arsane Chemical compound [AsH3] RBFQJDQYXXHULB-UHFFFAOYSA-N 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 238000011065 in-situ storage Methods 0.000 description 3
- 238000009413 insulation Methods 0.000 description 3
- 238000002955 isolation Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 3
- 101100274255 Arabidopsis thaliana CHER1 gene Proteins 0.000 description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- 101100256906 Saccharomyces cerevisiae (strain ATCC 204508 / S288c) SIC1 gene Proteins 0.000 description 2
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 2
- 230000003321 amplification Effects 0.000 description 2
- 125000004429 atom Chemical group 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 238000003795 desorption Methods 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 238000003199 nucleic acid amplification method Methods 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- 229910000077 silane Inorganic materials 0.000 description 2
- 229910021332 silicide Inorganic materials 0.000 description 2
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 2
- 229910008484 TiSi Inorganic materials 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000008034 disappearance Effects 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 125000004430 oxygen atom Chemical group O* 0.000 description 1
- 125000006850 spacer group Chemical group 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D10/00—Bipolar junction transistors [BJT]
- H10D10/01—Manufacture or treatment
- H10D10/021—Manufacture or treatment of heterojunction BJTs [HBT]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D10/00—Bipolar junction transistors [BJT]
- H10D10/80—Heterojunction BJTs
- H10D10/821—Vertical heterojunction BJTs
- H10D10/891—Vertical heterojunction BJTs comprising lattice-mismatched active layers, e.g. SiGe strained-layer transistors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
- H10D62/137—Collector regions of BJTs
- H10D62/138—Pedestal collectors
Landscapes
- Bipolar Transistors (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR9807060 | 1998-06-05 | ||
| FR9807060A FR2779571B1 (fr) | 1998-06-05 | 1998-06-05 | Procede de dopage selectif du collecteur intrinseque d'un transistor bipolaire vertical a base epitaxiee |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH11354537A true JPH11354537A (ja) | 1999-12-24 |
Family
ID=9527038
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP11156065A Pending JPH11354537A (ja) | 1998-06-05 | 1999-06-03 | エピタキシャルベ―スをもつたて形バイポ―ラトランジスタの真性コレクタの選択ド―ピングを行う方法 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US6265275B1 (de) |
| EP (1) | EP0962967B1 (de) |
| JP (1) | JPH11354537A (de) |
| DE (1) | DE69935472D1 (de) |
| FR (1) | FR2779571B1 (de) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2001267330A (ja) * | 2000-01-11 | 2001-09-28 | Mitsubishi Electric Corp | バイポーラトランジスタおよびその製造方法 |
| JP2004502300A (ja) * | 2000-06-26 | 2004-01-22 | テレフオンアクチーボラゲツト エル エム エリクソン | アンチモニ注入による高周波トランジスタ装置及び製造方法 |
| JP2006511084A (ja) * | 2002-12-20 | 2006-03-30 | コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ | 半導体装置の製造方法 |
| JP2008153684A (ja) * | 2001-01-30 | 2008-07-03 | Internatl Business Mach Corp <Ibm> | シリコン・ゲルマニウム・バイポーラ・トランジスタの製造方法 |
| US7642569B2 (en) | 2004-02-27 | 2010-01-05 | International Business Machines Corporation | Transistor structure with minimized parasitics and method of fabricating the same |
Families Citing this family (22)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2779572B1 (fr) * | 1998-06-05 | 2003-10-17 | St Microelectronics Sa | Transistor bipolaire vertical a faible bruit et procede de fabrication correspondant |
| DE19957113A1 (de) | 1999-11-26 | 2001-06-07 | Infineon Technologies Ag | Verfahren zur Herstellung eines aktiven Transistorgebietes |
| FR2805924A1 (fr) * | 2000-03-06 | 2001-09-07 | France Telecom | Procede de gravure d'une couche de silicium polycristallin et son application a la realisation d'un emetteur auto- aligne avec la base extrinseque d'un transistor bipolaire simple ou double polysilicium |
| JP3546169B2 (ja) * | 2000-05-26 | 2004-07-21 | 三菱重工業株式会社 | 半導体装置及びその製造方法 |
| US6459104B1 (en) * | 2001-05-10 | 2002-10-01 | Newport Fab | Method for fabricating lateral PNP heterojunction bipolar transistor and related structure |
| US20020177253A1 (en) * | 2001-05-25 | 2002-11-28 | International Business Machines Corporation | Process for making a high voltage NPN Bipolar device with improved AC performance |
| US20020197807A1 (en) * | 2001-06-20 | 2002-12-26 | International Business Machines Corporation | Non-self-aligned SiGe heterojunction bipolar transistor |
| FR2829288A1 (fr) * | 2001-09-06 | 2003-03-07 | St Microelectronics Sa | Structure de contact sur une region profonde formee dans un substrat semiconducteur |
| US6936519B2 (en) * | 2002-08-19 | 2005-08-30 | Chartered Semiconductor Manufacturing, Ltd. | Double polysilicon bipolar transistor and method of manufacture therefor |
| US6830982B1 (en) * | 2002-11-07 | 2004-12-14 | Newport Fab, Llc | Method for reducing extrinsic base resistance and improving manufacturability in an NPN transistor |
| KR100486304B1 (ko) * | 2003-02-07 | 2005-04-29 | 삼성전자주식회사 | 자기정렬을 이용한 바이씨모스 제조방법 |
| US7038298B2 (en) * | 2003-06-24 | 2006-05-02 | International Business Machines Corporation | High fT and fmax bipolar transistor and method of making same |
| US7144787B2 (en) * | 2005-05-09 | 2006-12-05 | International Business Machines Corporation | Methods to improve the SiGe heterojunction bipolar device performance |
| JP2010283329A (ja) * | 2009-05-08 | 2010-12-16 | Panasonic Corp | バイポーラトランジスタ及びその製造方法 |
| US9209264B2 (en) * | 2013-03-12 | 2015-12-08 | Newport Fab, Llc | Heterojunction bipolar transistor having a germanium raised extrinsic base |
| CN104425244B (zh) * | 2013-08-20 | 2017-02-15 | 上海华虹宏力半导体制造有限公司 | 锗硅异质结双极型晶体管制造方法 |
| US10429509B2 (en) | 2014-12-24 | 2019-10-01 | Stmicroelectronics Pte Ltd. | Molded proximity sensor |
| US10593771B2 (en) | 2017-12-11 | 2020-03-17 | International Business Machines Corporation | Vertical fin-type bipolar junction transistor with self-aligned base contact |
| US10797132B2 (en) * | 2018-06-29 | 2020-10-06 | Newport Fab, Llc | Heterojunction bipolar transistor fabrication using resist mask edge effects |
| US11404540B2 (en) | 2019-10-01 | 2022-08-02 | Analog Devices International Unlimited Company | Bipolar junction transistor, and a method of forming a collector for a bipolar junction transistor |
| US11355585B2 (en) | 2019-10-01 | 2022-06-07 | Analog Devices International Unlimited Company | Bipolar junction transistor, and a method of forming a charge control structure for a bipolar junction transistor |
| US11563084B2 (en) | 2019-10-01 | 2023-01-24 | Analog Devices International Unlimited Company | Bipolar junction transistor, and a method of forming an emitter for a bipolar junction transistor |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5321301A (en) * | 1992-04-08 | 1994-06-14 | Nec Corporation | Semiconductor device |
| JP2582519B2 (ja) * | 1992-07-13 | 1997-02-19 | インターナショナル・ビジネス・マシーンズ・コーポレイション | バイポーラ・トランジスタおよびその製造方法 |
| JPH07169771A (ja) * | 1993-12-15 | 1995-07-04 | Nec Corp | 半導体装置及びその製造方法 |
| JP2748898B2 (ja) * | 1995-08-31 | 1998-05-13 | 日本電気株式会社 | 半導体装置およびその製造方法 |
| KR100205017B1 (ko) * | 1995-12-20 | 1999-07-01 | 이계철 | 이종접합 바이폴러 트랜지스터의 제조방법 |
| DE19609933A1 (de) * | 1996-03-14 | 1997-09-18 | Daimler Benz Ag | Verfahren zur Herstellung eines Heterobipolartransistors |
-
1998
- 1998-06-05 FR FR9807060A patent/FR2779571B1/fr not_active Expired - Fee Related
-
1999
- 1999-06-01 US US09/323,525 patent/US6265275B1/en not_active Expired - Lifetime
- 1999-06-03 DE DE69935472T patent/DE69935472D1/de not_active Expired - Lifetime
- 1999-06-03 EP EP99401338A patent/EP0962967B1/de not_active Expired - Lifetime
- 1999-06-03 JP JP11156065A patent/JPH11354537A/ja active Pending
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2001267330A (ja) * | 2000-01-11 | 2001-09-28 | Mitsubishi Electric Corp | バイポーラトランジスタおよびその製造方法 |
| JP2004502300A (ja) * | 2000-06-26 | 2004-01-22 | テレフオンアクチーボラゲツト エル エム エリクソン | アンチモニ注入による高周波トランジスタ装置及び製造方法 |
| JP2008153684A (ja) * | 2001-01-30 | 2008-07-03 | Internatl Business Mach Corp <Ibm> | シリコン・ゲルマニウム・バイポーラ・トランジスタの製造方法 |
| JP2006511084A (ja) * | 2002-12-20 | 2006-03-30 | コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ | 半導体装置の製造方法 |
| US7642569B2 (en) | 2004-02-27 | 2010-01-05 | International Business Machines Corporation | Transistor structure with minimized parasitics and method of fabricating the same |
Also Published As
| Publication number | Publication date |
|---|---|
| EP0962967A1 (de) | 1999-12-08 |
| FR2779571B1 (fr) | 2003-01-24 |
| DE69935472D1 (de) | 2007-04-26 |
| FR2779571A1 (fr) | 1999-12-10 |
| EP0962967B1 (de) | 2007-03-14 |
| US6265275B1 (en) | 2001-07-24 |
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