JPH113597A - 不揮発性半導体記憶装置、不揮発性半導体記憶装置の書き込みデータの検証方法および不揮発性半導体記憶装置のデータの書き込み方法 - Google Patents

不揮発性半導体記憶装置、不揮発性半導体記憶装置の書き込みデータの検証方法および不揮発性半導体記憶装置のデータの書き込み方法

Info

Publication number
JPH113597A
JPH113597A JP10465498A JP10465498A JPH113597A JP H113597 A JPH113597 A JP H113597A JP 10465498 A JP10465498 A JP 10465498A JP 10465498 A JP10465498 A JP 10465498A JP H113597 A JPH113597 A JP H113597A
Authority
JP
Japan
Prior art keywords
data
memory cell
threshold voltage
voltage
write
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP10465498A
Other languages
English (en)
Japanese (ja)
Other versions
JPH113597A5 (de
Inventor
Hiroshi Iwahashi
弘 岩橋
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Toshiba Electronic Device Solutions Corp
Original Assignee
Toshiba Corp
Toshiba Microelectronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Toshiba Microelectronics Corp filed Critical Toshiba Corp
Priority to JP10465498A priority Critical patent/JPH113597A/ja
Publication of JPH113597A publication Critical patent/JPH113597A/ja
Publication of JPH113597A5 publication Critical patent/JPH113597A5/ja
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
    • G11C11/5621—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using charge storage in a floating gate
    • G11C11/5642—Sensing or reading circuits; Data output circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
    • G11C11/5621—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using charge storage in a floating gate
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
    • G11C11/5621—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using charge storage in a floating gate
    • G11C11/5628—Programming or writing circuits; Data input circuits

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Read Only Memory (AREA)
JP10465498A 1997-04-15 1998-04-15 不揮発性半導体記憶装置、不揮発性半導体記憶装置の書き込みデータの検証方法および不揮発性半導体記憶装置のデータの書き込み方法 Pending JPH113597A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10465498A JPH113597A (ja) 1997-04-15 1998-04-15 不揮発性半導体記憶装置、不揮発性半導体記憶装置の書き込みデータの検証方法および不揮発性半導体記憶装置のデータの書き込み方法

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP9689497 1997-04-15
JP9-96894 1997-04-15
JP10465498A JPH113597A (ja) 1997-04-15 1998-04-15 不揮発性半導体記憶装置、不揮発性半導体記憶装置の書き込みデータの検証方法および不揮発性半導体記憶装置のデータの書き込み方法

Publications (2)

Publication Number Publication Date
JPH113597A true JPH113597A (ja) 1999-01-06
JPH113597A5 JPH113597A5 (de) 2005-06-30

Family

ID=26438057

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10465498A Pending JPH113597A (ja) 1997-04-15 1998-04-15 不揮発性半導体記憶装置、不揮発性半導体記憶装置の書き込みデータの検証方法および不揮発性半導体記憶装置のデータの書き込み方法

Country Status (1)

Country Link
JP (1) JPH113597A (de)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011501339A (ja) * 2007-10-18 2011-01-06 マイクロン テクノロジー， インク． Ｎａｎｄ型フラッシュ中のメモリセルの検出
JP2011108357A (ja) * 2004-05-27 2011-06-02 Renesas Electronics Corp 半導体記憶装置

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011108357A (ja) * 2004-05-27 2011-06-02 Renesas Electronics Corp 半導体記憶装置
JP2011501339A (ja) * 2007-10-18 2011-01-06 マイクロン テクノロジー， インク． Ｎａｎｄ型フラッシュ中のメモリセルの検出

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