JPH11510312A5 - - Google Patents
Info
- Publication number
- JPH11510312A5 JPH11510312A5 JP1997506899A JP50689997A JPH11510312A5 JP H11510312 A5 JPH11510312 A5 JP H11510312A5 JP 1997506899 A JP1997506899 A JP 1997506899A JP 50689997 A JP50689997 A JP 50689997A JP H11510312 A5 JPH11510312 A5 JP H11510312A5
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US08/505,085 | 1995-07-21 | ||
| US08/505,085 US5814869A (en) | 1992-01-28 | 1995-07-21 | Short channel fermi-threshold field effect transistors |
| PCT/US1996/011968 WO1997004489A1 (en) | 1995-07-21 | 1996-07-19 | Short channel fermi-threshold field effect transistors |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JPH11510312A JPH11510312A (ja) | 1999-09-07 |
| JPH11510312A5 true JPH11510312A5 (2) | 2004-08-26 |
| JP4338784B2 JP4338784B2 (ja) | 2009-10-07 |
Family
ID=24008940
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP50689997A Expired - Fee Related JP4338784B2 (ja) | 1995-07-21 | 1996-07-19 | 短チャネル・フェルミしきい値電界効果型トランジスタ |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US5814869A (2) |
| EP (1) | EP0843898B1 (2) |
| JP (1) | JP4338784B2 (2) |
| KR (1) | KR100417847B1 (2) |
| AU (1) | AU6503996A (2) |
| CA (1) | CA2227011C (2) |
| DE (1) | DE69628840T2 (2) |
| WO (1) | WO1997004489A1 (2) |
Families Citing this family (21)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH1117000A (ja) * | 1997-06-27 | 1999-01-22 | Mitsubishi Electric Corp | 半導体装置およびその製造方法 |
| TW432636B (en) * | 1997-09-26 | 2001-05-01 | Thunderbird Tech Inc | Metal gate fermi-threshold field effect transistor |
| US6323520B1 (en) * | 1998-07-31 | 2001-11-27 | Vlsi Technology, Inc. | Method for forming channel-region doping profile for semiconductor device |
| US6373094B2 (en) * | 1998-09-11 | 2002-04-16 | Texas Instruments Incorporated | EEPROM cell using conventional process steps |
| US20020036328A1 (en) * | 1998-11-16 | 2002-03-28 | William R. Richards, Jr. | Offset drain fermi-threshold field effect transistors |
| US6365475B1 (en) * | 2000-03-27 | 2002-04-02 | United Microelectronics Corp. | Method of forming a MOS transistor |
| JP3881840B2 (ja) * | 2000-11-14 | 2007-02-14 | 独立行政法人産業技術総合研究所 | 半導体装置 |
| US6555872B1 (en) | 2000-11-22 | 2003-04-29 | Thunderbird Technologies, Inc. | Trench gate fermi-threshold field effect transistors |
| US6432777B1 (en) | 2001-06-06 | 2002-08-13 | International Business Machines Corporation | Method for increasing the effective well doping in a MOSFET as the gate length decreases |
| US20040079997A1 (en) * | 2002-10-24 | 2004-04-29 | Noriyuki Miura | Semiconductor device and metal-oxide-semiconductor field-effect transistor |
| KR101022854B1 (ko) * | 2002-11-29 | 2011-03-17 | 글로벌파운드리즈 인크. | 도핑된 고유전 측벽 스페이서들을 구비한 전계 효과트랜지스터의 드레인/소스 확장 구조 |
| US6867104B2 (en) * | 2002-12-28 | 2005-03-15 | Intel Corporation | Method to form a structure to decrease area capacitance within a buried insulator device |
| JP2008523622A (ja) * | 2004-12-07 | 2008-07-03 | サンダーバード・テクノロジーズ，インコーポレイテッド | Ｆｅｒｍｉ−ＦＥＴのひずみシリコンとゲート技術 |
| US20060220112A1 (en) * | 2005-04-01 | 2006-10-05 | International Business Machines Corporation | Semiconductor device forming method and structure for retarding dopant-enhanced diffusion |
| TW200739876A (en) * | 2005-10-06 | 2007-10-16 | Nxp Bv | Electrostatic discharge protection device |
| US7790527B2 (en) * | 2006-02-03 | 2010-09-07 | International Business Machines Corporation | High-voltage silicon-on-insulator transistors and methods of manufacturing the same |
| WO2008128164A1 (en) * | 2007-04-12 | 2008-10-23 | The Penn State Research Foundation | Accumulation field effect microelectronic device and process for the formation thereof |
| US9209246B2 (en) | 2007-04-12 | 2015-12-08 | The Penn State University | Accumulation field effect microelectronic device and process for the formation thereof |
| US20090134476A1 (en) * | 2007-11-13 | 2009-05-28 | Thunderbird Technologies, Inc. | Low temperature coefficient field effect transistors and design and fabrication methods |
| US20100123206A1 (en) * | 2008-11-18 | 2010-05-20 | Thunderbird Technologies, Inc. | Methods of fabricating field effect transistors including titanium nitride gates over partially nitrided oxide and devices so fabricated |
| US10553494B2 (en) * | 2016-11-29 | 2020-02-04 | Taiwan Semiconductor Manufacturing Company, Ltd. | Breakdown resistant semiconductor apparatus and method of making same |
Family Cites Families (45)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB1261723A (en) * | 1968-03-11 | 1972-01-26 | Associated Semiconductor Mft | Improvements in and relating to semiconductor devices |
| US3789504A (en) * | 1971-10-12 | 1974-02-05 | Gte Laboratories Inc | Method of manufacturing an n-channel mos field-effect transistor |
| US3872491A (en) * | 1973-03-08 | 1975-03-18 | Sprague Electric Co | Asymmetrical dual-gate FET |
| US4042945A (en) * | 1974-02-28 | 1977-08-16 | Westinghouse Electric Corporation | N-channel MOS transistor |
| DE2801085A1 (de) * | 1977-01-11 | 1978-07-13 | Zaidan Hojin Handotai Kenkyu | Statischer induktionstransistor |
| US4108686A (en) * | 1977-07-22 | 1978-08-22 | Rca Corp. | Method of making an insulated gate field effect transistor by implanted double counterdoping |
| JPS5587483A (en) * | 1978-12-25 | 1980-07-02 | Fujitsu Ltd | Mis type semiconductor device |
| JPS5587481A (en) * | 1978-12-25 | 1980-07-02 | Fujitsu Ltd | Mis type semiconductor device |
| US4274105A (en) * | 1978-12-29 | 1981-06-16 | International Business Machines Corporation | MOSFET Substrate sensitivity control |
| JPS5691473A (en) * | 1979-12-25 | 1981-07-24 | Fujitsu Ltd | Semiconductor |
| JPS5710268A (en) * | 1980-11-25 | 1982-01-19 | Nec Corp | Semiconductor device |
| JPS5816565A (ja) * | 1981-07-22 | 1983-01-31 | Hitachi Ltd | 絶縁ゲ−ト形電界効果トランジスタ |
| JPS5833870A (ja) * | 1981-08-24 | 1983-02-28 | Hitachi Ltd | 半導体装置 |
| DE3138747A1 (de) * | 1981-09-29 | 1983-04-14 | Siemens AG, 1000 Berlin und 8000 München | Selbstsperrender feldeffekt-transistor des verarmungstyps |
| USRE32800E (en) * | 1981-12-30 | 1988-12-13 | Sgs-Thomson Microelectronics, Inc. | Method of making mosfet by multiple implantations followed by a diffusion step |
| US4491807A (en) * | 1982-05-20 | 1985-01-01 | Rca Corporation | FET Negative resistance circuits |
| JPS5929460A (ja) * | 1982-08-11 | 1984-02-16 | Seiko Epson Corp | 薄膜トランジスタ |
| US4697198A (en) * | 1984-08-22 | 1987-09-29 | Hitachi, Ltd. | MOSFET which reduces the short-channel effect |
| JPS6153775A (ja) * | 1984-08-24 | 1986-03-17 | Oki Electric Ind Co Ltd | 半導体集積回路装置 |
| JPS61160975A (ja) * | 1985-01-08 | 1986-07-21 | Matsushita Electric Ind Co Ltd | Ｍｏｓ型電界効果トランジスタ |
| JPS61185973A (ja) * | 1985-02-13 | 1986-08-19 | Nec Corp | 半導体装置 |
| JPS61292358A (ja) * | 1985-06-19 | 1986-12-23 | Fujitsu Ltd | Ｍｉｓ型電界効果トランジスタの製造方法 |
| US4701775A (en) * | 1985-10-21 | 1987-10-20 | Motorola, Inc. | Buried n- channel implant for NMOS transistors |
| JPS62128175A (ja) * | 1985-11-29 | 1987-06-10 | Hitachi Ltd | 半導体装置 |
| JPS62219966A (ja) * | 1986-03-22 | 1987-09-28 | Toshiba Corp | 半導体装置 |
| JPS62248255A (ja) * | 1986-04-21 | 1987-10-29 | Nissan Motor Co Ltd | 薄膜トランジスタ |
| US4771012A (en) * | 1986-06-13 | 1988-09-13 | Matsushita Electric Industrial Co., Ltd. | Method of making symmetrically controlled implanted regions using rotational angle of the substrate |
| JPS6353975A (ja) * | 1986-08-22 | 1988-03-08 | Nec Corp | Ｍｉｓトランジスタ及びその製造方法 |
| US5192990A (en) * | 1986-09-18 | 1993-03-09 | Eastman Kodak Company | Output circuit for image sensor |
| DE3737144A1 (de) * | 1986-11-10 | 1988-05-11 | Hewlett Packard Co | Metalloxid-halbleiter-feldeffekttransistor (mosfet) und verfahren zu seiner herstellung |
| EP0274278B1 (en) * | 1987-01-05 | 1994-05-25 | Seiko Instruments Inc. | MOS field effect transistor and method of manufacturing the same |
| US4928156A (en) * | 1987-07-13 | 1990-05-22 | Motorola, Inc. | N-channel MOS transistors having source/drain regions with germanium |
| US4907048A (en) * | 1987-11-23 | 1990-03-06 | Xerox Corporation | Double implanted LDD transistor self-aligned with gate |
| JPH01214169A (ja) * | 1988-02-23 | 1989-08-28 | Nec Corp | 半導体装置 |
| US4906588A (en) * | 1988-06-23 | 1990-03-06 | Dallas Semiconductor Corporation | Enclosed buried channel transistor |
| US4899202A (en) * | 1988-07-08 | 1990-02-06 | Texas Instruments Incorporated | High performance silicon-on-insulator transistor with body node to source node connection |
| US4990974A (en) * | 1989-03-02 | 1991-02-05 | Thunderbird Technologies, Inc. | Fermi threshold field effect transistor |
| JP2578662B2 (ja) * | 1989-05-19 | 1997-02-05 | 三洋電機株式会社 | 半導体装置の製造方法 |
| JPH0714065B2 (ja) * | 1990-03-19 | 1995-02-15 | 株式会社東芝 | Ｍｏｓ型半導体装置及びその製造方法 |
| US5369295A (en) * | 1992-01-28 | 1994-11-29 | Thunderbird Technologies, Inc. | Fermi threshold field effect transistor with reduced gate and diffusion capacitance |
| US5194923A (en) * | 1992-01-28 | 1993-03-16 | Thunderbird Technologies, Inc. | Fermi threshold field effect transistor with reduced gate and diffusion capacitance |
| US5543654A (en) * | 1992-01-28 | 1996-08-06 | Thunderbird Technologies, Inc. | Contoured-tub fermi-threshold field effect transistor and method of forming same |
| JP3271982B2 (ja) * | 1993-02-23 | 2002-04-08 | サンダーバード テクノロジーズ インコーポレイテッド | 電界効果トランジスタ |
| JP2513402B2 (ja) * | 1993-05-01 | 1996-07-03 | 日本電気株式会社 | 半導体装置の構造及び製造方法 |
| US5463237A (en) * | 1993-11-04 | 1995-10-31 | Victor Company Of Japan, Ltd. | MOSFET device having depletion layer |
-
1995
- 1995-07-21 US US08/505,085 patent/US5814869A/en not_active Expired - Lifetime
-
1996
- 1996-07-19 KR KR10-1998-0700480A patent/KR100417847B1/ko not_active Expired - Fee Related
- 1996-07-19 WO PCT/US1996/011968 patent/WO1997004489A1/en not_active Ceased
- 1996-07-19 DE DE69628840T patent/DE69628840T2/de not_active Expired - Lifetime
- 1996-07-19 AU AU65039/96A patent/AU6503996A/en not_active Abandoned
- 1996-07-19 JP JP50689997A patent/JP4338784B2/ja not_active Expired - Fee Related
- 1996-07-19 CA CA002227011A patent/CA2227011C/en not_active Expired - Fee Related
- 1996-07-19 EP EP96924638A patent/EP0843898B1/en not_active Expired - Lifetime