JPH1164381A - Contact probe, method of manufacturing the same, and probe device provided with the contact probe - Google Patents

Abstract

(57) [Problem] To provide a contact probe capable of obtaining high hardness and having excellent toughness in bending, and suppressing cracks and the like in a bent portion. SOLUTION: This is a contact probe 1 in which a plurality of pattern wirings 3 are formed on a film 2 and each end of the pattern wirings is arranged so as to protrude from the film to be a contact pin 3a, at least the contact pin 3a. Is a high manganese alloy layer HM formed of a nickel-manganese alloy and having a manganese concentration set to 0.05% by weight or more, and a low manganese alloy layer LM set to a manganese concentration lower than the high manganese alloy layer. And a technique in which the lower manganese alloy layer side is bent at an intermediate position V with the outer side facing outward. In addition,
The low manganese alloy layer is preferably annealed.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention is used as a probe pin, a socket pin, or the like, and is incorporated in a probe card, a test socket, or the like, and contacts each terminal of a semiconductor IC chip, a liquid crystal device, or the like to perform an electrical test. And a method of manufacturing the same, and a probe device including the contact probe.

[0002]

2. Description of the Related Art In general, a contact pin is used to conduct an electrical test by contacting a semiconductor chip such as an IC chip or an LSI chip or each terminal of an LCD (liquid crystal display). In recent years, as the integration and miniaturization of IC chips and the like have increased, the pitch of contact pads, which are electrodes, has been reduced, and the pitch of contact pins has been required to be narrower. However, with a tungsten needle contact probe used as a contact pin, it has been difficult to cope with a multi-pin narrow pitch due to the limitation of the diameter of the tungsten needle.

On the other hand, for example, Japanese Patent Publication No. 7-820
No. 27 proposes a contact probe technique in which a plurality of pattern wirings are formed on a resin film, and the ends of these pattern wirings are arranged so as to protrude from the resin film and serve as contact pins. In this technical example, the tip of each of the plurality of pattern wirings is used as a contact pin, thereby achieving a narrow pitch with a large number of pins.
This eliminates the need for many complicated components.

In the above-described contact probe, the amount of pressing of the contact pin is increased or decreased in order to obtain a desired contact pressure during a test. However, a large amount of pressing is required to obtain a large contact pressure. However,
The above contact probe has a tip portion of the pattern wiring,
That is, since the contact pin is formed of Ni (nickel), the hardness is only about Hv300, and the contact pin is bent or deformed due to excessive contact pressure due to low hardness, so that the pressing amount is reduced. And the contact pressure was not large. As a result, a contact pressure sufficient for electrical measurement cannot be obtained, causing a contact failure.

As a countermeasure, there is a method of adding an additive such as saccharin when forming Ni by plating. In this case, it is possible to maintain a hardness of Hv 350 or more at room temperature. Since S (sulfur) is contained in such additives, when heated at a high temperature, for example, at 300 ° C., there is an inconvenience that the hardness rapidly decreases to Hv 200 or less. For this reason, when the above-mentioned contact probe is sometimes put at a high temperature, it cannot be used particularly for a chip carrier for a burn-in test or the like.

Therefore, a contact probe made of a nickel-manganese (Ni-Mn) alloy has been proposed which has improved hardness and also has heat resistance and can stably maintain high hardness even after heating at a high temperature.

The surface of each terminal (pad) of an IC chip or the like formed of an Al (aluminum) alloy or the like is oxidized in the air, and is in a state of being covered with a thin aluminum surface oxide film. I have. Therefore, in order to conduct an electrical test of the pad, it is necessary to ensure the conductivity by exfoliating the surface oxide film of aluminum and exposing the aluminum inside.

Therefore, in the above-mentioned contact probe, the contact pin is brought into contact with the surface of the pad and is overdriven (the contact pin is brought down after contact with the pad) so that the tip of the contact pin is brought down. The surface oxide film of aluminum on the surface of the pad is scraped off to expose the aluminum inside. The above-mentioned operation is performed by scrubbing.
It is called b) and is important for ensuring electrical testing.

In the above contact pins, in order to prevent the base of the pad from being damaged during scrubbing, it is necessary to ensure a sufficient contact angle of the contact pin with the pad. The reason for this is that if the contact angle is small, the amount of aluminum rejected on the surface becomes extremely large, which affects the pad base.

As a countermeasure, as shown in FIG. 38, a contact probe 601 which is bent at an intermediate position V of a contact pin 600 has been proposed. In the contact probe 601, the angle of the contact pin 600 with respect to the object to be measured (pad) can be changed between the distal end portion and the proximal end portion, and the angle of the contact pin 600 with respect to the pad at the proximal end portion, that is, the pad of the film 602. It is possible to increase the angle (contact angle) between the tip of the contact pin 600 and the pad without increasing the angle with respect to. That is, the contact probe 601 has an advantage that the base of the pad can be prevented from being damaged during the scrub without increasing the scrub distance excessively and without increasing the height of the probe device. .

[0011]

The contact probe 601 having the bent contact pin 600 has the following features.
When the above-described contact pin made of the Ni—Mn alloy is employed, as shown in FIG.
Is bent at the middle position V, cracks or breaks may occur outside the bent portion. Further, even if no cracks or the like are generated at the time of bending, there is a possibility that a crack or the like may be generated outside the bent portion by repeated use. The cause is that in the contact probe made of the Ni-Mn alloy, Mn must be contained in a certain concentration or more in order to improve the hardness, but in this case, the toughness of the contact pin is reduced, and the contact pin is bent at the time of bending. This is because cracks and the like occur because the outside of the portion is stretched most.

SUMMARY OF THE INVENTION The present invention has been made in view of the above-mentioned problems, and provides a contact probe capable of obtaining high hardness, having excellent toughness in bending, suppressing cracks in a bent portion, a method of manufacturing the same, and the contact probe. An object of the present invention is to provide a probe device provided with the probe device.

[0013]

The present invention has the following features to attain the object mentioned above. That is, in the contact probe according to claim 1, a plurality of pattern wirings are formed on the film, and each tip of these pattern wirings is arranged in a protruding state from the film to be a contact pin, and at least the The contact pin is formed of a nickel-manganese alloy and has a high manganese alloy layer having a manganese concentration of 0.05% by weight or more and a low manganese alloy layer having a manganese concentration lower than the high manganese alloy layer. And a technique in which the low manganese alloy layer is bent at an intermediate position with the low manganese alloy layer side facing outward.

In this contact probe, the high manganese alloy layer is made of Ni--Mn having a manganese concentration of 0.05% by weight or more.
Since it is an alloy, after heating at room temperature and high temperature,
Even after heating at 0 ° C., a high hardness of Hv 350 or more can be obtained. Furthermore, since it is bent with the low manganese alloy layer side formed of a Ni-Mn alloy having a lower manganese concentration than the high manganese alloy layer facing outside, compared to the case of forming a single high manganese alloy layer The toughness outside the bent portion is increased, and the occurrence of cracks and the like outside the bent portion is suppressed even during bending and repeated use.

In the contact probe according to the second aspect,
2. The contact probe according to claim 1, wherein the high manganese alloy layer has a manganese concentration of 1.5% by weight or less.

In this contact probe, when the Mn concentration exceeds 1.5% by weight, the stress of the contact pin increases, and there is a possibility that the contact pin may be curved, and the contact pin is very brittle and the toughness is greatly reduced. Therefore, by setting the Mn concentration of the high manganese alloy layer within the above range,
The high manganese alloy layer itself located inside the bent portion also has appropriate toughness and hardness as a contact probe.

In the contact probe according to the third aspect,
The contact probe according to claim 1 or 2,
The low manganese alloy layer employs a technology in which the manganese concentration in the thickness direction is gradually increased toward the high manganese alloy layer.

In this contact probe, since the Mn concentration of the low manganese alloy layer is set to be gradually higher, the Mn concentration is gradient in the thickness direction of the low manganese alloy layer, and the difference between the high manganese alloy layer and the low manganese alloy layer is increased. By gradually reducing the difference in Mn concentration, sharp changes in hardness and toughness at the interface between the two layers are alleviated. Therefore, the warpage of the contact pins caused by the difference in the coefficient of thermal expansion between the two layers is greatly reduced.

In the contact probe according to the fourth aspect,
4. The contact probe according to claim 1, wherein the low manganese alloy layer is annealed.

In this contact probe, since the low manganese alloy layer is annealed, the low manganese alloy layer is softened and the toughness is further improved.

In the contact probe according to the fifth aspect,
The contact probe according to any one of claims 1 to 4, wherein a technique is employed in which a metal film is directly attached to the film.

In this contact probe, even if the film is, for example, a resin film which easily expands by absorbing moisture, a metal film is directly attached to the film. Thereby, elongation of the film is suppressed. In other words, the distance between the contact pins is less likely to be shifted, and the tip portion is accurately and accurately contacted with the object to be measured. Therefore, it is possible to prevent damage or the like caused by the tip made of a high-hardness Ni-Mn alloy coming into contact with a place other than the terminal of the measurement object such as an IC chip or an LCD. Furthermore, the metal film can be used as a ground, thereby enabling impedance matching to be performed near the tip of the contact probe and preventing adverse effects due to reflected noise even when performing a test in a high frequency range. it can. That is, if the characteristic impedance between the board wiring side and the contact pin does not match in the middle of the transmission line from the tester called a prober, reflected noise will occur. In this case, the longer the transmission line with a different characteristic impedance is, the larger the reflected noise will be. There is a problem that occurs. Reflected noise causes signal distortion, and tends to cause malfunction at higher frequencies. In the present contact probe, by using the metal film as the ground, the deviation of the characteristic impedance from the substrate wiring side can be minimized to the vicinity of the contact pin tip, and the malfunction due to the reflection noise can be suppressed.

In the contact probe according to the sixth aspect,
6. The contact probe according to claim 5, wherein a technique is employed in which a second film is directly attached to the metal film.

In this contact probe, since the second film is directly attached to the metal film, when the wiring substrate is disposed above the metal film, the wiring pattern on the substrate side of the wiring substrate is not provided. Since the wiring and other wiring do not directly contact the metal film, a short circuit can be prevented. In addition, if the metal film is simply attached on the resin film and the metal film is exposed, the oxidation proceeds in the air because the metal film is exposed. Coating the film to prevent its oxidation.

According to a seventh aspect of the present invention, in the probe device, the contact probe according to any one of the first to sixth aspects, a ferroelastic film disposed on the film and projecting from the film shorter than the contact pins, A technology including a support member for supporting the ferroelastic film and the contact probe is employed.

In this probe device, the ferroelastic film is provided, and the ferroelastic film presses the tip side of the contact pin from above. Therefore, even if the pin tip is curved upward, the Ni-Mn alloy A uniform contact pressure can be obtained for each pin formed by the above. That is, since the tip portion can be reliably brought into contact with the object to be measured, measurement errors due to poor contact can be further reduced.

In the probe device according to an eighth aspect of the present invention, in the probe device according to the seventh aspect, the film is more than the ferroelastic film so that the ferroelastic film acts as a buffer when the contact pin is pressed. A technology that is formed long on the tip side is employed.

In this probe device, the film is formed longer on the tip side than the ferroelastic film, and the ferroelastic film acts as a cushioning material when pressing the contact pins. The contact pin is not distorted and curved due to friction with the film, and stable contact with the measurement object can be maintained. Therefore, the contact pressure of the tip portion formed of a high hardness Ni-Mn alloy can be obtained uniformly over a long period of time.

According to a ninth aspect of the present invention, there is provided a method for manufacturing a contact probe, wherein a plurality of pattern wirings are formed on a film, and the tips of the pattern wirings are arranged so as to protrude from the film to form contact pins. A first metal layer forming step of forming a first metal layer of a material to be adhered to or bonded to the material of the contact pin on a substrate layer, and forming a mask on the first metal layer. A plating step of forming a second metal layer to be provided to the contact pins on the unmasked portion by plating with a nickel-manganese alloy, and a plating step on the second metal layer from which the mask has been removed. A film applying step of applying the film covering a part other than the part provided for the contact pin, and a part comprising the film and a second metal layer A separating step of separating the substrate layer and the portion made of the first metal layer, and a contact pin bending step of bending the contact pin at an intermediate position thereof. A high hardness layer forming step of forming a high manganese alloy layer having a manganese concentration of 0.05% by weight or more, and a high toughness forming a low manganese alloy layer having a manganese concentration lower than that of the high manganese alloy layer A layer forming step, wherein the contact pin bending step adopts a technique of bending the low manganese alloy layer side outward.

In this method of manufacturing a contact probe,
A two-layer structure of a high manganese alloy layer and a low manganese alloy layer is formed by the high hardness layer forming step and the high toughness layer forming step, and the lower manganese alloy layer, which is higher in toughness than the high manganese alloy layer, is outwardly formed in the contact pin bending step. Since the outside of the bent portion that is most stretched at the time of bending becomes the high toughness layer, the stress due to bending is alleviated and the generation of cracks and the like is suppressed.

In the method for manufacturing a contact probe according to a tenth aspect, in the method for manufacturing a contact probe according to the ninth aspect, the step of forming the high toughness layer includes the step of forming the low manganese alloy layer such that the manganese concentration in the thickness direction is the same. A technique of forming the manganese alloy layer to be gradually higher toward the high manganese alloy layer is employed.

In this method of manufacturing a contact probe,
In the high toughness layer forming step, since the manganese concentration is gradually increased toward the high manganese alloy layer in the thickness direction of the low manganese alloy layer, the Mn concentration is gradient in the thickness direction of the low manganese alloy layer, The difference in Mn concentration between the manganese alloy layer and the low manganese alloy layer is gradually reduced. That is, a sharp change in the Mn concentration at the interface between the two layers is reduced, and the stress concentration at the interface at the time of plating is suppressed. Therefore, it is possible to suppress the bending of the contact pin caused by the stress at the interface.

According to a eleventh aspect of the present invention, in the method of the ninth or tenth aspect, the method further comprises the step of annealing the low manganese alloy layer after the step of forming the high toughness layer. Technology is adopted.

In this method of manufacturing a contact probe,
Since the low manganese alloy layer is annealed in the annealing step, the low manganese alloy layer is softened and the toughness is further improved.

In the method for manufacturing a contact probe according to a twelfth aspect, in the method for manufacturing a contact probe according to the eleventh aspect, the annealing step includes a heating temperature and a heating temperature lower than a temperature and a time at which the high manganese alloy layer is annealed. A technique that performs heating time is employed.

In this method of manufacturing a contact probe,
In the annealing step, the low manganese alloy layer is annealed at a lower heating temperature and a shorter heating time than the temperature and time at which the high manganese alloy layer is annealed, so that only the low manganese alloy layer is annealed and the high manganese alloy layer is not annealed. That is, only the low manganese alloy layer is softened while the hardness of the high manganese alloy layer is maintained, and the toughness is further improved.

[0037]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS A first embodiment of a contact probe according to the present invention will be described below with reference to FIGS. In these figures, reference numeral 1 denotes a contact probe, 2 denotes a resin film, and 3 denotes a pattern wiring.

As shown in FIGS. 1 and 2, the contact probe 1 of this embodiment has a polyimide resin film 2.
And has a pattern wiring 3 formed of metal on one surface of the resin film 2.
The tip of the pattern wiring 3 protrudes from an end of the resin film 2 (that is, each side of the central opening K) and serves as a contact pin 3a. At the rear end of the pattern wiring 3, a contact terminal 3b to be contacted with a contact pin on the tester side is formed.

The pattern wiring 3 is formed of a Ni—Mn alloy (second metal layer), and the contact pins 3a are formed by coating Au on the surface. The pattern wiring 3 and the contact pin 3a are disposed on the resin film 2 side and have a Mn concentration of 0.05 wt% to 1.
High manganese alloy layer HM set within the range of 5% by weight
And a low manganese alloy layer LM having a lower Mn concentration than the high manganese alloy layer HM. The low manganese alloy layer LM has a thickness of M
The n concentration is set gradually higher toward the high manganese alloy layer HM. Further, contact pin 3a is annealed at a heating temperature and a heating time at which only low manganese alloy layer LM is annealed.

As shown in FIG. 2, the contact pin 3a is bent toward the resin film 2 at an intermediate position V of a predetermined length from its tip, that is, with the low manganese alloy layer LM side outward. ing.

Next, with reference to FIG. 3, the steps of manufacturing the contact probe 1 will be described in the order of steps.

[Base Metal Layer Forming Step (First Metal Layer Forming Step)] First, as shown in FIG. 3A, a base metal is formed on a stainless steel supporting metal plate 5 by Cu (copper) plating. A metal layer (first metal layer) 6 is formed.

[Pattern Forming Step] After a photoresist layer 7 is formed on the base metal layer 6, as shown in FIG. 3B, a predetermined pattern is formed on the photoresist layer 7 by photolithography. A photomask 8 is applied and exposed, and as shown in FIG.
Is developed to remove the portion to be the pattern wiring 3 and form an opening 7a in the remaining photoresist layer (mask) 7.

In the present embodiment, the photoresist layer 7 is formed of a negative type photoresist, but the desired opening 7a is formed by employing a positive type photoresist.
May be formed. In the present embodiment,
The photoresist layer 7 corresponds to a “mask” in the present invention. However, the “mask” in the claims of the present application is:
Like the photoresist layer 7 of the present embodiment, the present invention is not limited to the one in which the opening 7a is formed through the exposure and development steps using the photomask 8. For example, a hole is formed in advance in a portion to be plated (that is, in advance,
A film or the like (formed in a state indicated by reference numeral 7 in FIG. 3C) may be used. In the present invention, when such a film or the like is used as a “mask”, the pattern forming step in the present embodiment is unnecessary.

[Plating Step] Then, FIG.
As shown in FIG. 5, the Ni—Mn alloy layer (second metal layer) N serving as the pattern wiring 3 is divided into a “high toughness layer forming step” and a “high hardness layer forming step” by electrolytic plating in the opening 7a. It is formed by processing.

<High Toughness Layer Forming Step> First, a low manganese alloy layer LM having a low manganese concentration and serving as a high toughness layer is formed on the base metal layer 6 by plating. At this time, as an example of the composition of the plating solution to contain Mn, a plating solution obtained by adding Mn sulfamate to a Ni sulfamate bath was used.
By controlling the amount of Mn in the plating solution and the current density during plating, the Mn concentration is set lower than the high manganese alloy layer HM to be plated next. In the present embodiment, the current density is gradually increased, and the Mn concentration is gradually increased in the thickness direction.

<High Hardness Layer Forming Step> Further, a high manganese alloy layer HM which is a high hardness layer having a Mn concentration in the range of 0.05% to 1.5% by weight is formed on the low manganese alloy layer LM by plating. And laminate. At this time, Mn in the plating solution
The Mn concentration is set higher than the low manganese alloy layer LM by controlling the amount and the current density during plating. The thicknesses of the low manganese alloy layer LM and the high manganese alloy layer HM are appropriately set depending on the respective Mn concentrations, bending positions, angles, and the like. For example, the high manganese alloy layer HM having a thickness of several tens μm is used. On the other hand, the thickness of the low manganese alloy layer LM is set in a range from about several μm to about several tens μm.

After the above plating, the photoresist layer 7 is removed as shown in FIG.

[Annealing Step] In this state, the low manganese alloy layer L formed on the base metal layer 6 on the supporting metal plate 5
The M and the high manganese alloy layer HM are put into a heating furnace, and annealing is performed at a predetermined heating temperature and a predetermined heating time. At this time, the annealing is performed at a lower heating temperature and a shorter heating time than the temperature and time at which the high manganese alloy layer HM is annealed.

[Film Adhering Step] Next, FIG.
As shown in the above, on the Ni-Mn alloy layer N,
In addition to the tip of the pattern wiring 3 shown in FIG.
Are adhered by the adhesive 2a. This resin film 2
This is a two-layer tape in which a metal film (copper foil) 500 is integrally provided on a polyimide resin PI. Before this film deposition step, the metal film 500 of the two-layer tape
Then, copper etching using photoengraving technology is applied to form a ground plane, and in this film deposition step,
The polyimide resin PI of the two-layer tape is adhered to the Ni-Mn alloy layer N via the adhesive 2a. The metal film 500 may be made of Ni, Ni alloy or the like in addition to the copper foil.

[Separation Step] Then, as shown in FIG. 3 (g), after the portion composed of the resin film 2, the pattern wiring 3 and the base metal layer 6 is separated from the supporting metal plate 5, Cu etching is performed. After that, only the pattern wiring 3 is adhered to the resin film 2.

[Gold coating step] Then, as shown in FIG.
Plating is applied to form an Au layer AU on the surface. At this time, the Au layer AU is formed on the entire surface of the contact pins 3a protruding from the resin film 2 over the entire circumference.

[Contact Pin Bending Step] After the above step,
Using a precision mold, the contact pins 3a are collectively bent so that the low manganese alloy layer LM side faces outward, thereby forming contact pins 3a having a predetermined angle as shown in FIG.

[Contact Pin Polishing Step] When the length (height) of the contact pins 3a is not uniform as a result of bending the contact pins 3a, the contact pins 3a are polished for uniformity. Polishing is performed by bringing sandpaper into contact with the bent end of the contact pin 3a while the contact pin 3a is fixed, and rotating the sandpaper in that state.

Through the above steps, the contact probe 1 in which the pattern wiring 3 is adhered to the resin film 2 as shown in FIGS. 1 and 2 is manufactured.

In the method of manufacturing the contact probe 1, a two-layer structure of the high manganese alloy layer HM and the low manganese alloy layer LM is formed by the step of forming the high hardness layer and the step of forming the high toughness layer. Since the low manganese alloy layer LM, which is higher in toughness than the manganese alloy layer HM, is bent outward, the outside of the bent portion that is most stretched at the time of bending becomes a high toughness layer, so that stress due to bending is reduced. At the same time, the occurrence of cracks and the like is suppressed.

If the Mn concentration exceeds 1.5% by weight, the stress of the contact pin 3a increases, and the contact pin 3a may be curved, and the contact pin 3a is very brittle and the toughness is reduced. By setting the Mn concentration of the high manganese alloy layer HM within the above range, not only the low manganese alloy layer LM maintains toughness but also the high manganese alloy layer HM itself has appropriate toughness and hardness as a contact probe. Given.

Further, in the high toughness layer forming step, the manganese concentration is gradually increased toward the high manganese alloy layer HM in the thickness direction of the low manganese alloy layer LM. , The Mn concentration is gradient, and the difference in Mn concentration between the high manganese alloy layer HM and the low manganese alloy layer LM is gradually reduced. That is, a sharp change in the Mn concentration at the interface between the two layers is reduced, and the stress concentration at the interface at the time of plating is suppressed. Therefore, it is possible to suppress the curvature and the like of the contact pin 3a caused by the stress at the interface.

Further, since the low manganese alloy layer LM formed first by plating has a lower manganese concentration than the high manganese alloy layer HM and serves as a stress relaxation layer, the stress generated at the initial stage of electrodeposition is reduced by the low manganese alloy layer LM. It is reduced. Therefore, Ni is generated due to the stress being carried over during the film growth process.
-There is also an effect of suppressing the curvature of the entire Mn alloy layer N, separation from the base metal layer 6, and breakage of the base metal layer 6.

Further, in the annealing step, the low manganese alloy layer LM is annealed at a lower heating temperature and a shorter heating time than the temperature and time at which the high manganese alloy layer HM is annealed, so that only the low manganese alloy layer LM is annealed. ,
The high manganese alloy layer HM is not annealed. That is, only the low manganese alloy layer LM is softened while the hardness of the high manganese alloy layer HM is maintained, and the toughness is further improved.

Next, an example in which the contact probe 1 is applied to a probe device used for a burn-in test or the like, that is, a so-called chip carrier, will be described with reference to FIGS. In these figures, reference numeral 10 denotes a probe device, 11 denotes a frame body, 12 denotes a positioning plate, 13
Denotes an upper plate, 14 denotes a clamper, and 15 denotes a lower plate. Note that the contact probe according to the present invention functions as a flexible substrate when incorporated in a probe device because the contact probe as a whole is flexible and easily bent.

As shown in FIGS. 4 and 5, the probe device 10 comprises a frame main body 11, a positioning plate 12 fixed inside the frame main body and having an opening formed in the center.
The contact probe 1 includes an upper plate (supporting member) 13 for holding the contact probe 1 from above and supporting the same, and a clamper 14 for urging the upper plate 13 from above and fixing the upper plate 13 to the frame body 11. Further, a lower plate 15 for mounting and holding the IC chip I is attached to a lower portion of the frame main body 11 by a bolt 15a.

The central opening K and contact pin 3a of the contact probe 1 are
It is formed corresponding to the arrangement of the contact pads on the C chip I, and the contact state between the contact pins 3a and the contact pads of the IC chip I can be monitored from the central opening K. Notches are formed in the corners of the central opening K so that the contact probe 1 can be easily assembled.
Can be deformed.

The contact terminal 3 of the contact probe 1
b is set wider than the pitch of the contact pins 3a so that the contact pads of the IC chip I having a narrower pitch and the tester side contact pins having a wider pitch than the contact pads can be easily matched. .

Note that contact pads are not formed on all four sides of the IC chip I, and if the contact pads are arranged on some of the sides, at least the central opening K corresponding to the some of the sides is formed. It is sufficient to provide the contact pins 3a only on the sides, but in order to stably hold the IC chip I, it is preferable to form the contact pins 3a on two opposing sides and press both opposing sides of the IC chip I. .

A procedure for attaching the IC chip I to the probe device 10 will be described. [Temporary Assembly Step] First, the positioning plate 12 is
And the contact probe 1
Are arranged so that the central opening K and the opening of the frame body 11 are aligned. Then, the upper plate 13 is placed on the central opening K with the openings similarly aligned, and the frame main body 1 is placed on the upper plate 13 from above.
1 is engaged with the clamper 14. Since the clamper 14 is a kind of leaf spring having a bent portion in the center, the clamper 14 has a function of pressing and fixing the upper plate 13 in the locked state.

In the above assembled state, an opening is provided in the center and the IC chip I is attached to this portion, so that the attached IC chip I can be observed from above the opening. The upper plate 13 and the clamper 14 are formed in a substantially rectangular shape on a plane, and as shown in FIG. 5, are assembled so that the contact terminals 3b of the contact probe 1 project outward from the long sides.

In the lower surface of the upper plate 13, the vicinity of the opening is inclined at a predetermined inclination angle, and as shown in FIG. 6, the contact pins 3a of the contact probe 1 are inclined downward at a predetermined angle. The IC chip I is placed on the lower plate 15 with the wiring side facing upward. In this state, the lower plate 15 is temporarily fixed to the frame main body 11 from below. At this time, since the distance between the tip of the contact pin 3a of the contact probe 1 and the upper surface of the lower plate 15 is set smaller than the thickness of the IC chip I by a predetermined amount, the IC chip I is sandwiched between the contact pin 3a and the lower plate 15. You.

[Positioning Step] Further, while observing the position of the contact pad of the IC chip I with respect to the tip of the contact pin 3a from above the opening, the positioning plate 12 is moved or the IC chip I is moved with a needle jig or the like. And fine adjustment is set so that the corresponding tip of the contact pin 3a and the contact pad coincide with each other and come into contact with each other.

When the dicing accuracy of the IC chip I is high and the outer shape and the position of the contact pad are relatively stable, the positional relationship between the positioning plate 12 and the contact probe 1 is adjusted beforehand. By fixedly assembling, it is possible to match the contact pin 3a with the contact pad without performing the fine adjustment. Thus, the step of aligning the IC chip I becomes unnecessary, and the work of mounting the IC chip I can be performed efficiently and easily.

[Fixing Step] After the positioning step, the lower plate 15 is fixed to the frame body 11 in full scale. At this time, so-called overdrive is applied to the contact pin 3a in the inclined state, and the contact pin 3a is pressed with a predetermined pressing force.
a The tip and the contact pad are in contact with each other to be reliably electrically connected. This state is very similar to the state where the IC chip I is mounted on a so-called multi-chip module or the like, and the operation state of the IC chip I almost mounted can be tested with high reliability.

This probe device 10 is a small chip carrier of about 1 inch square (about 2.5 cm square), and is suitable for a reliability test involving high-temperature heating such as a dynamic burn-in test.

In the above probe device 10, the contact pin 3a of the contact probe 1 has a manganese concentration of 0.0
Since the high manganese alloy layer HM which is a Ni-Mn alloy of 5% by weight or more is provided, high hardness of Hv 350 or more can be obtained even after heating at room temperature and high temperature, that is, even after heating at 500 ° C. Further, the contact pin 3a is made of a low manganese alloy layer LM having a lower manganese concentration than the high manganese alloy layer HM.
And is bent with the low manganese alloy layer LM on the outside, so that the toughness outside the bent portion is higher than that formed by a single high manganese alloy layer HM, which is sufficient for repeated use. Durability can be provided.

Further, as described above, since the Mn concentration of the low manganese alloy layer LM is set to be gradually higher in the contact pin 3a, the difference in Mn concentration between the high manganese alloy layer HM and the low manganese alloy layer LM is reduced. With a gradual decrease, sharp changes in hardness and toughness at the interface between the two layers are alleviated. Therefore, the warpage of the contact pin 3a caused by the difference in the coefficient of thermal expansion between the two layers is greatly reduced.

In the first embodiment, the contact probe 1 is applied to the probe device 10 as a chip carrier. However, the contact probe 1 may be applied to another measuring jig or the like.

Next, as a second embodiment, a configuration in which the contact probe 16 according to the present invention is adopted as an IC probe and assembled into a mechanical part 60 to form a probe device (probe card) 70 will be described with reference to FIGS. This will be described with reference to FIG.

FIGS. 7 and 8 show the contact probe 1.
FIG. 9 is a diagram showing an IC probe 6 cut out into a predetermined shape, and FIG. 9 is a cross-sectional view taken along line CC of FIG.
In the contact probe 1 of the first embodiment, the high manganese alloy layer HM is formed on the resin film 2 side. However, in the contact probe 16 of the second embodiment, the high manganese alloy layer HM is formed on the opposite side to the resin film 2. Has formed.
In this case, the contact pin 3a of the second embodiment is bent such that the low manganese alloy layer LM is on the outside, and the tip of the contact pin 3a is opposite to the resin probe 2 in the first embodiment. To the opposite side.

As shown in FIG. 8, the resin film 2 of the contact probe 16 has the contact probe 1
Alignment hole 2b for aligning and fixing 6
And a hole 2c, and a window 2 for transmitting a signal obtained from the pattern wiring 3 to a printed circuit board 20 (see FIG. 10) through a contact terminal 3b which is a drawing wiring.
d is provided.

The mechanical part 60 comprises a mounting base 30, a top clamp 40, and a bottom clamp 50, as shown in FIG. First, the top clamp 40 is mounted on the printed circuit board 20. Next, the mounting base 30 to which the contact probe 16 has been
Then, a bolt 42 is screwed into the mounting member 1 (see FIG. 11). Then, by holding down the contact probe 16 with the bottom clamp 50, the pattern wiring 3 is maintained in a constant inclined state, the tip of the contact pin 3a bent downward is set at a predetermined angle, and the contact pin 3a is Press against IC chip.

FIG. 11 shows the probe device 70 after the assembly is completed.
Is shown. FIG. 12 is a sectional view taken along line EE of FIG. As shown in FIG. 12, the tip of the pattern wiring 3, that is, the contact pin 3a is
Is in contact with the IC chip I.

The mounting base 30 is provided with a positioning pin 31 for adjusting the position of the contact probe 16. By inserting the positioning pin 31 into the positioning hole 2 b of the contact probe 16, a pattern is formed. The wiring 3 and the IC chip I can be accurately positioned. The elastic body 51 of the bottom clamp 50 is pressed against the pattern wiring 3 in the portion of the window 2 d provided in the contact probe 16 to bring the contact terminal 3 b into contact with the electrode 21 of the printed circuit board 20. Signal 21
Can be communicated to the outside.

The probe device 70 constructed as described above
When performing a probe test or the like of the IC chip I using the probe device 70, the probe device 70 is inserted into the prober and electrically connected to the tester, and a predetermined electric signal is transmitted from the contact pins 3a of the pattern wiring 3 to the wafer. By sending the signal to the IC chip I, the output signal from the IC chip I is transmitted from the contact pin 3a to the tester, and the electrical characteristics of the IC chip I are measured.

In the contact probe 16 and the probe device 70 incorporating the same, the contact pin 3a has a manganese concentration of 0.05 to 0.05 as in the first embodiment.
A low manganese alloy layer including a high manganese alloy layer HM that is a Ni—Mn alloy within a range of 1.5% by weight and a low manganese alloy layer LM having a manganese concentration lower than the high manganese alloy layer HM and having a concentration gradient. Since the LM side is bent outward, the contact pin 3 has excellent toughness at the bent portion.
a High hardness (Hv 350 or more) as a whole is obtained.

Next, referring to FIG. 13 to FIG.
An embodiment will be described. In the present embodiment, the contact probe 16 cut into a predetermined shape for an IC probe in the second embodiment is used by cutting into a predetermined shape of an LCD probe instead. The contact probe cut into the LCD probe is shown in FIG.
15 to FIG. 15, reference numeral 200 denotes a resin film.

As shown in FIG. 16, an LCD probe device (probe device) 100 has a structure in which a contact probe holding body (support member) 110 is fixed to a frame frame 120. The tip of the contact pin 3a protruding from the holding body 110 is LC
D (liquid crystal display) 90 is in contact with a terminal (not shown).

As shown in FIG. 15, the contact probe holding body 110 has a top clamp 111 and a bottom clamp 115. The top clamp 111 is provided with a first projection 112 for holding the tip of the contact pin 3a.
ABIC (wiring board having board-side pattern wiring) 3
It has a second projection 113 for holding the terminal 301 on the 00 side and a third projection 114 for holding the lead. The bottom clamp 115 includes an inclined plate 116, a mounting plate 117, and a bottom plate 118.

The contact probe 200 is moved to the inclined plate 116.
And the terminals 301 of the TABIC 300 are connected to the resin films 201 and 20 of the contact probe 200.
Place it so that it is located between the two. Thereafter, the top clamp 111 is mounted on the resin film 201 such that the first protrusion 112 is on the resin film 201 and the second protrusion 113 is in contact with the terminal 301, and is assembled with a bolt.

As shown in FIG. 17, the contact probe holding body 110 is manufactured by incorporating the contact probe 200 and combining the top clamp 111 and the bottom clamp 115 with the bolt 130.

The contact probe holding body 110 is
As shown in FIG.
Assembled in the CD probe device 100. In order to perform an electrical test of the LCD 90 using the LCD probe device 100, the contact pins 3 a of the LCD probe device 100 are obtained from the contact pins 3 a with the tips of the contact pins 3 a being in contact with the terminals (not shown) of the LCD 90. This is performed by taking out the output signal through the TABIC 300 to the outside.

In the above-described LCD probe device 100, L
The contact pins 3a to be brought into contact with the terminals of the CD 90 are made of a high manganese alloy layer HM and a low manganese alloy layer L set to the same manganese concentration as in the first and second embodiments.
M, and is bent with the low manganese alloy layer LM side outward, so that excellent toughness of the bent portion and high hardness (Hv 350 or more) of the contact pin 3a as a whole can be obtained.

Next, referring to FIG. 19 to FIG.
An embodiment will be described. As shown in FIG. 19, the contact probe 20 described in the third embodiment
In addition to the normal tip S, the contact pin 3a at 0 has a tip S1 curved upward and a tip S2 curved downward due to some residual stress during plating or due to other factors. There are cases.

In this case, as shown in FIG. 20, even if the resin film 201 is sandwiched between the first protrusion 112 and the inclined plate 116 and the contact pin 3a is pressed against the terminal of the LCD 90, the normal tip S and the downward bending can be obtained. Tip S2
Touches the terminal of the LCD 90, but the tip S1 curved upward may not be able to obtain a sufficient contact pressure even if it makes contact. From this, the contact pin 3a
However, there is a problem that a contact failure with the LCD 90 occurs and an accurate electrical test cannot be performed.

Therefore, in the fourth embodiment, as shown in FIG. 21, the tip S1 curved above the contact pin 3a.
In order to align the downwardly curved distal end S2 with the normal distal end S, a ferroelastic film 400 made of an organic or inorganic material is
a, and the contact probe 200 and the ferroelastic film 400 are attached to the first protrusion 1 of the top clamp 111 in such a state that the top end of the top clamp 111 protrudes shorter than the contact pin 3a.
A contact probe holding body (supporting member) 110 sandwiched between the base 12 and the inclined plate 116 of the bottom clamp 115 is employed. The ferroelastic film 400 is preferably made of polyethylene terephthalate or the like if it is an organic material, and is preferably made of ceramics, especially an alumina film if it is an inorganic material.

Then, the contact probe holding body 1
10 is fixed to the frame 120, and the contact pins 3
When a is pressed against the terminal of the LCD 90, the ferroelastic film 400 presses the contact pin 3a from above, so that even the tip S1 curved upward, the ferroelastic film 400 reliably contacts the terminal of the LCD 90. Thereby, a uniform contact pressure is obtained at the tip of each contact pin 3a.

That is, since the tip of the contact pin 3a can be reliably brought into contact with the terminal of the LCD 90, measurement errors due to poor contact can be eliminated. Furthermore, the contact pins 3a from the ferroelastic film 400
By changing the protrusion amount of the contact pin 3a,
It is possible to change the timing of pressing the contact pin 3a from above when pressing is performed, and it is possible to obtain a desired contact pressure with a desired pressing amount.

Next, a fifth embodiment will be described with reference to FIGS. As shown in FIG. 22, since the resin film 201 of the contact probe 200 described in the third embodiment is made of, for example, a polyimide resin, it absorbs moisture and elongates, so that the area between the contact pins 3a, 3a is increased. The interval t sometimes changed. This makes it impossible for the contact pins 3a to come into contact with the predetermined positions of the terminals of the LCD 90, and there is a problem that an accurate electrical test cannot be performed.

Therefore, in the fifth embodiment, as shown in FIG.
00 and the contact pin 3 even if the humidity changes
The change in the interval t between the contact pins 3a and 3a is reduced, whereby the contact pins 3a are reliably brought into contact with the predetermined positions of the terminals of the LCD 90.

That is, the displacement of each contact pin 3a is less likely to occur, and the tip is accurately and accurately contacted with the terminal of the LCD 90. Therefore, it is possible to prevent damage or the like caused by contact of the contact pins 3a made of a high-hardness Ni-Mn alloy with places other than the terminals of the LCD 90. In addition, the metal film 500
Any of Ni, Ni alloy, Cu and Cu alloy is preferable.

Further, the metal film 500 can be used as a ground, which makes it possible to design the impedance matching up to the vicinity of the tip of the probe device 100. Even when a test in a high frequency range is performed, the metal film 500 is not affected by reflection noise. The effect of being able to prevent adverse effects can be obtained.

Next, a sixth embodiment will be described with reference to FIG. That is, the metal film 500 is attached on the resin film 201 as in the fifth embodiment, and the ferroelastic film 400 is used as in the third embodiment. A uniform contact pressure can be obtained irrespective of the curvature of the tip, and a change in the interval t between the contact pins 3a, 3a can be minimized to perform the electrical test accurately.

Next, a seventh embodiment will be described with reference to FIGS. As shown in FIG. 25, the metal film 5 adhered on the resin film 201
A structure in which a second resin film 202 is further adhered on the second resin film 202 is adopted, and a ferroelastic film 400 is provided on the second resin film 202 as shown in FIG.

Here, unlike the sixth embodiment, the reason why the second resin film 202 is provided is that the terminals of the TABIC 300 disposed above the metal film 500 at the rear end directly contact the metal film 500. This is because the short circuit caused by the above is prevented. In addition, if the metal film 500 is merely attached and provided on the resin film 201, the oxidation of the metal film 500 exposed in the air proceeds, so that the second resin film 202 Is also to prevent its oxidation.

Next, an eighth embodiment will be described with reference to FIGS. 27 and 28. In the fourth, sixth and seventh embodiments, the ferroelastic film 400 is in press contact with the contact pins 3a during use, and the friction between the ferroelastic film 400 and the contact pins 3a is repeated by repeated use, When the distortion due to this is accumulated, the contact pin 3a may bend right and left, and the contact point may shift.

Therefore, in the eighth embodiment, as shown in FIG. 27, the resin film 201 is made to be a wider film 201a than the conventional one, and the projecting length of the contact pins 3a from the metal film 500 is set to X1, and Assuming that the projecting length of the resin film 201a from the metal film 500 is X2, a configuration in which X1> X2 is adopted. Then, as shown in FIG. 28, when the ferroelastic film 400 is used so as to protrude shorter than the wide resin film 201a, the ferroelastic film 400 comes into contact with the soft wide resin film 201a and the contact pins 3a
Is not directly in contact with the contact pin 3a, so that the contact pin 3a can be prevented from bending left and right.

Further, the LCD according to the eighth embodiment described above
Probe device 100, the wide resin film 201a
Is formed longer on the distal end side than the ferroelastic film 400 and acts as a cushioning material when the ferroelastic film 400 presses the contact pin 3a. Is not distorted and curved, and stable contact with the terminal of the LCD 90 can be maintained.

Next, a ninth embodiment will be described with reference to FIGS. 29 and 30. When the second resin film 202 is attached on the metal film 500, and the length of the contact pins 3a protruding from the metal film 500 is X1, and the length of the wide resin film 201a protruding from the metal film 500 is X2, X1> It is configured so as to have a relationship of X2. Then, as shown in FIG. 30, the ferroelastic film 400 provided on the second resin film 202 is arranged so as to overlap and protrude shorter than the wide resin film 201a.

In the LCD probe device 100 according to the ninth embodiment, the respective functions and effects of the third to eighth embodiments, namely, increasing the hardness of the contact pin 3a and improving the toughness of the bent portion, uniforming the contact pressure, and position Effects such as suppression of displacement, stabilization of contact pressure, and prevention of short circuit by a metal film are obtained.

The contact probes according to the third to ninth embodiments may be employed in a probe device for a chip carrier or an IC probe. In this case, the shape of the contact probe, the wiring, the pitch and arrangement of the contact pins, the angle of bending, and the like are set in accordance with each of the probe devices to be incorporated.

Next, referring to FIG. 31 to FIG.
Embodiment 0 will be described. The difference between the tenth embodiment and the first embodiment is that, in the probe device 10 of the first embodiment, the IC chip I is located below the contact probe 1, whereas the probe device 700 of the tenth embodiment is different. The point is that the IC chip I is located above the contact probe 701.

That is, the probe device 700 has the configuration shown in FIG.
As shown in FIG. 33, a frame main body 711, a positioning plate 712 fixed to the inside of the frame main body 711 and having a rectangular opening in the center and an inclined surface inclined upward around the opening are formed. A contact probe 701 disposed on a positioning plate 712;
An upper plate (supporting member) 713 for holding and supporting 1 from above
And the upper plate 713 is urged from above to move the frame body 711
And a clamper 714 fixed to the In the probe device 700, the IC chip I is disposed above the contact probe 701, that is, between the tip of the contact pin 3a bent upward and the upper plate 713.

Further, the pattern wiring 3 and the contact pin 3a of the contact probe 1 in the first embodiment
Is configured such that a high manganese alloy layer HM is arranged on the resin film 2 side, whereas the pattern wiring 3 and the contact pin 3a of the contact probe 701 in the tenth embodiment are different from the low manganese alloy layer HM on the resin film 2 side. The difference is that the layer LM is arranged.

That is, in the plating process in the manufacturing process of the contact probe 701, first, a high manganese alloy layer HM having a high manganese concentration and a high hardness layer is formed on the base metal layer by plating, and then the high manganese alloy layer is formed. The low manganese alloy layer LM which is a high toughness layer having a lower Mn concentration than the layer HM is formed. Note that, as in the first embodiment, the low manganese alloy layer LM in the contact probe 701 has a gradually increasing Mn concentration in the thickness direction toward the high manganese alloy layer HM.

The contact pin 3a is
As shown in FIG. 34, the opposite side of the resin film 2 side (IC chip I
Side), that is, with the low manganese alloy layer LM side facing outward.

In each of the above embodiments, the following settings are made. (1) As shown in FIG. 35, the tip of the contact pin 3a in each of the above embodiments is in contact with the pad P (measurement target) of the IC chip I at an angle α with the contact surface Pa.
Is not less than 60 ° and less than 90 °, and the base end of the contact pin 3a has an angle β with the contact surface Pa.
Is not less than 0 ° and not more than 30 °.

Since it is difficult to form a fine pattern in a desired shape on a mask when producing the contact pins 3a, as shown in FIG. 7, a contact pattern corresponding to an end of the pattern is formed. The tip of the pin 3a has a convex curved surface. Therefore, the contact pin 3a
Substantially point contact with the pad P below the convex curved surface,
Therefore, since the local needle pressure at the time of contact becomes large, there is a tendency that the base of the pad P is more easily cut than the conventional tungsten needle which contacts the pad in a substantially flat surface.

Therefore, in each of the above embodiments, as described above, the contact pin 3a is bent at the intermediate position V as shown in FIG. The angles α and β with respect to the contact surface Pa are changed. This makes it possible to set the angle α (contact angle) to be large without increasing the angle β, that is, the angle of the resin film 2 with respect to the contact surface Pa. Therefore, the scrub distance is excessively large. It is possible to prevent the base of the pad P from being damaged during scrubbing without increasing the height of the probe device.

In particular, since the angle α is maintained at 60 ° or more, the base of the pad P is not damaged. On the other hand, the reason why the angle α is set to less than 90 ° is that if the angle α is 90 ° or more, the film of the pad P is not rubbed well during scrubbing, and sufficient conductivity is not ensured. Because it causes

Since the angle β is set to 30 ° or less, the scrub distance does not become excessively long, and the tip of the contact pin 3a does not protrude from the pad P during the scrub. On the other hand, the reason for setting the angle β to 0 ° or more is that if it is less than 0 °, a sufficient overdrive amount (arrow Z in FIG. 35) cannot be obtained during scrubbing. Note that the scrub distance is slightly smaller than the calculated value due to the contact pin 3a flexing during overdrive or the tip of the contact pin 3a being caught by friction with the contact surface Pa. I know that.

(2) In each embodiment, the contact pin 3
a by bending it as shown in FIG.
The contact surface Pa is smaller than that of the contact pin which is not bent.
Is formed with a high degree of parallelism with respect to. Conventionally,
In performing the alignment between the contact pin and the pad, particularly in the second embodiment, the position of the contact pin is adjusted by irradiating light from below to the contact pin and detecting light reflected on the contact pin. Although a recognition method is used, as described above, since the surface 3c having a higher degree of perpendicularity to the direction in which light is irradiated is formed, a sufficient amount of light is reflected, and position detection is easy. is there.

(3) In each embodiment, the contact pin 3
Since the length L from the middle position V to the front end portion of “a” is 2.0 mm or less, the amount of bending of the portion of the length L during overdrive can be suppressed to be small. By making the contact needle pressure almost constant, good scrub is performed. Further, since the length L is set to 0.1 mm or more, the film or other dust removed at the time of the scrub does not adhere to the inner surface side of the intermediate position V of the contact pin 3a.

(4) In each embodiment, the contact pin 3
Since the bent front end of the contact pin 3a is polished, even if the length (height) of the contact pin 3a is not uniform due to the bending, the contact pin 3a is made uniform by polishing and the front end of the contact pin 3a. Can improve the flatness (planarity) and reduce the contact resistance.

(5) In the probe device of each embodiment, the contact surface supporting the distal end side of the resin film 2 (for example, FIG. 1)
2 is set to be equal to the angle β, the base end of the contact pin 3a protruding from the tip of the resin film 2 along the surface of the resin film 2 is: The angle with the contact surface Pa can be stably maintained at the value of β. Thus, the angles α and β can be set to the predetermined values during scrub simply by lowering the probe device perpendicularly to the contact surface Pa.

Note that the present invention also includes the following embodiments. (1) The low manganese alloy layer LM is formed with a gradient of Mn concentration, but the gradient concentration does not have to be set as long as the Mn concentration is lower than that of the high manganese alloy layer HM. For example, the Mn concentration of the low manganese alloy layer LM may be constant. However, as described above, the gradient of the Mn concentration in the low manganese alloy layer LM has an advantage that a sharp change in stress concentration, hardness, and toughness at the interface with the high manganese alloy layer HM can be reduced.

(2) Although the low manganese alloy layer LM is formed on either the resin film side or the opposite side, a low manganese alloy layer may be formed on both sides of the high manganese alloy layer. Absent. In this case, either of the low manganese alloy layers may be bent with the outer side facing outward, so that the degree of freedom in assembling into the probe device is improved.

[0125]

EXAMPLES In the electroplating step of forming the pattern wiring and contact pins of the contact probe in each of the above embodiments, the plating conditions were determined based on the following test results.

The plating solution for adding Mn to Ni is obtained by adding Mn sulfamate to a Ni sulfamate bath. The amount of Mn contained in the Ni plating film depends on the amount of Mn in the plating solution and the amount of Mn in the plating solution. Therefore, the high manganese alloy layer HM was subjected to a plating process under the following conditions because the current density depends on the current density. Mn amount: 20 to 35 g / l Current density: 1 to 10 A / dm ²

The reason for setting the plating conditions of the high manganese alloy layer HM within the above range is that when the amount of Mn is less than 20 g / l and the current density is less than 1 A / dm ² , the Mn concentration in the film is small and the desired hardness cannot be obtained. This is because it cannot be obtained, and if it exceeds 35 g / l and 10 A / dm ² , the Mn concentration increases, the stress of the plating film increases, and the film itself becomes very brittle.

It is to be noted that plating may be performed not only with sulfamic acid but also with a nickel sulfate bath as a base. However, in the plating with a nickel sulfamate bath, the stress is reduced as compared with the nickel sulfate bath. effective. Table 1 below shows the experimental results of the Mn concentration and the hardness before and after the heat treatment when the current density was changed when the amount of Mn was constant (30 g / l). FIG. 36 shows the relationship between the Mn concentration and the hardness.

[0129]

[Table 1]

In the step of forming a tough layer of the contact probe in the first embodiment, the current density is gradually increased from the initial stage of electrodeposition, and 3 A is required at the end of electrodeposition of the low manganese alloy layer LM.
/ Dm ^2, and as shown in FIG.
A low manganese alloy layer LM having a gradient concentration of n was formed. Further, in the high hardness layer forming step, following the high toughness layer forming step, Mn is changed to a constant current density of 3 A / dm ^2.
A high manganese alloy layer HM having a concentration of 0.4% by weight was formed.

It is to be noted that the contact pin is constituted by a single concentration of only the high manganese alloy layer and the low manganese alloy layer only, and the contact pin is composed of a high manganese alloy layer (high hardness layer) and a low manganese alloy layer (high toughness layer). Table 2 shows comparative data on toughness in the case of a layered structure. Table 2 shows the results of a 90-degree bending test of the prototype contact pin. The cycle required to break the contact pin was defined as one cycle of bending the contact pin 90 degrees and then returning the pin to the original state. It shows a number. As can be seen from Table 2,
The low manganese alloy layer has better toughness than the high manganese alloy layer, and the two-layer structure has the same high toughness as the low manganese alloy layer single layer.

[0132]

[Table 2]

Further, as the conditions of the annealing step, the elongation rate of the low manganese alloy layer LM which is not annealed is set to about 2-3 %, The elongation percentage of the low manganese alloy layer LM annealed under the above conditions was about 5% or more. Here, the reason why the heating temperature is set to 400 ° C. or higher is that
If the temperature is lower than 400 ° C., the low manganese alloy layer LM cannot be annealed.
This is because, if it exceeds, the high manganese alloy layer HM is also annealed at the same time, and the hardness decreases. Table 3 shows the results of a test in which the elongation was measured when the heating time was fixed at 2 hours and the annealing heat treatment conditions were changed, that is, the current density, Mn.
It shows the relationship among concentration, hardness, elongation and heating temperature.

[0134]

[Table 3]

[0135]

According to the present invention, the following effects can be obtained. (1) According to the contact probe of the first aspect, the high manganese alloy layer has a manganese concentration of 0.05% by weight or more.
Since it is an i-Mn alloy, H
Since a high hardness of v350 or more can be obtained, and the contact pin is bent with the low manganese alloy layer side having a lower manganese concentration lower than that of the high manganese alloy layer, the contact pin is formed of a single high manganese alloy layer. The toughness outside the bent portion can be increased as compared with the case. Therefore, as a whole, the contact pin has high heat resistance and high hardness, and is unlikely to have a crack or the like outside the bent portion,
It is possible to have high reliability enough to withstand repeated use for a long time.

(2) According to the contact probe of the second aspect, the Mn concentration of the high manganese alloy layer is 1.5% by weight.
By setting as follows, appropriate high toughness and hardness can be given to the high manganese alloy layer itself located inside the bent portion as a contact probe.

(3) According to the contact probe of the third aspect, since the Mn concentration of the low manganese alloy layer is set to be gradually higher, a sharp change in hardness and toughness at the interface with the high manganese alloy layer is reduced. can do. Therefore, the warpage of the contact pin caused by the difference in the thermal expansion coefficient between the two layers can be significantly reduced, and the warpage due to a temperature change during measurement can be suppressed to maintain a stable contact pressure and the like.

(4) According to the contact probe of the fourth aspect, since the low manganese alloy layer is annealed, the low manganese alloy layer is softened and the toughness is further improved, so that a crack is formed outside the bent portion. Etc. are less likely to occur and higher reliability can be achieved.

(5) According to the contact probe of the fifth aspect, even if the film is, for example, a resin film which easily absorbs moisture and stretches, a metal film is directly attached to the film. Because it is provided,
The extension of the film is suppressed by the metal film, the gap between the contact pins is less likely to occur, and the contact pins can be accurately and accurately contacted with the object to be measured. Therefore, a high hardness Ni-M is placed at a place other than the terminal such as an IC chip or an LCD as an object to be measured.
Damage or the like caused by contact of a contact pin formed of an n alloy can be prevented. Further, in the present contact probe, by using the metal film as the ground, the deviation of the characteristic impedance from the substrate wiring side can be minimized to the vicinity of the contact pin tip, and the malfunction due to the reflected noise can be suppressed. .

(6) According to the contact probe of the sixth aspect, since the second film is directly attached to the metal film, the substrate of the wiring substrate disposed above the metal film is provided. Since the side pattern wiring and other wiring do not directly contact the metal film, a short circuit can be prevented. Further, the second film can cover the metal film to prevent its oxidation.

(7) According to the probe device of the seventh aspect, since the ferroelastic film presses the contact pins from above, the Ni pins having high hardness can be used even if the pin tips are curved upward. -A uniform contact pressure is obtained for each pin formed of the Mn alloy. That is, since the contact pin can be reliably brought into contact with the object to be measured, measurement errors due to poor contact can be eliminated.

(8) According to the probe device of the eighth aspect, the film is formed longer on the distal end side than the ferroelastic film, and the ferroelastic film serves as a cushioning material when pressing the contact pin. In addition, the contact pin is not distorted and bent due to friction with the ferroelastic film, and stable contact with the object to be measured can be maintained. Therefore, the contact pressure of the tip portion formed of a high hardness Ni-Mn alloy can be obtained uniformly over a long period of time.

(9) In the method for manufacturing a contact probe according to the ninth aspect, a two-layer structure of a high manganese alloy layer and a low manganese alloy layer is formed by the high hardness layer forming step and the high toughness layer forming step, and the contact pin is folded. In the bending process, the low manganese alloy layer, which is higher in toughness than the high manganese alloy layer, is bent outside, so that the outside of the bent portion that is stretched most during bending becomes the high toughness layer, so the stress caused by bending is relaxed And the occurrence of cracks and the like can be suppressed. Therefore, bending defects due to cracks or breaks in the bent parts are greatly reduced, manufacturing yield is improved, and stress at the time of bending is eased, so that bending variations are reduced and high precision molding is possible. Becomes

(10) In the method for manufacturing a contact probe according to claim 10, in the high toughness layer forming step, the manganese concentration in the thickness direction of the low manganese alloy layer is gradually increased toward the high manganese alloy layer. Therefore, the difference in Mn concentration between the high manganese alloy layer and the low manganese alloy layer is gradually reduced. Therefore, a sharp change in the Mn concentration at the interface between the two layers is alleviated, the stress concentration at the interface at the time of plating can be suppressed, and the curvature of the contact pin caused by the stress at the interface can be suppressed.

(11) In the method for manufacturing a contact probe according to the eleventh aspect, since the low manganese alloy layer is annealed in the annealing step, the low manganese alloy layer is softened and the toughness can be further improved.

(12) In the method for manufacturing a contact probe according to the twelfth aspect, in the annealing step, the low manganese alloy layer is annealed at a lower heating temperature and a shorter heating time than the temperature and time at which the high manganese alloy layer is annealed. So
While maintaining the hardness of the high manganese alloy layer, only the low manganese alloy layer can be selectively softened to further improve the toughness. Therefore, it is possible to maintain the hardness of the contact pin as a whole and further increase the toughness to obtain a more reliable contact probe.

[Brief description of the drawings]

FIG. 1 is an enlarged schematic view showing a first embodiment of a contact probe according to the present invention.

FIG. 2 is a sectional view taken along line AA of FIG.

FIG. 3 is a fragmentary cross-sectional view showing a method of manufacturing the contact probe according to the first embodiment of the present invention in the order of steps.

FIG. 4 is an exploded perspective view of a probe device (chip carrier) in the first embodiment of the contact probe according to the present invention.

FIG. 5 is an external perspective view of a probe device (chip carrier) in the first embodiment of the contact probe according to the present invention.

FIG. 6 is an enlarged cross-sectional view taken along line BB of a main part of FIG. 5;

FIG. 7 is a perspective view of an essential part showing a second embodiment of the contact probe according to the present invention.

FIG. 8 is a plan view showing a second embodiment of the contact probe according to the present invention.

FIG. 9 is a sectional view taken along the line CC of FIG. 8;

FIG. 10 is an exploded perspective view showing an example of a probe device incorporating a second embodiment of the contact probe according to the present invention.

FIG. 11 is a perspective view of an essential part showing an example of a probe device incorporating a second embodiment of the contact probe according to the present invention.

FIG. 12 is a sectional view taken along line EE of FIG. 11;

FIG. 13 is a perspective view showing a contact probe in a third embodiment of the probe device according to the present invention.

14 is a sectional view taken along line FF of FIG.

FIG. 15 is an exploded perspective view showing a contact probe holding body in a third embodiment of the probe device according to the present invention.

FIG. 16 is a perspective view showing a third embodiment of the probe device according to the present invention.

FIG. 17 is a perspective view showing a contact probe holding body in a third embodiment of the probe device according to the present invention.

FIG. 18 is a sectional view taken along line XX of FIG. 16;

FIG. 19 is a side view showing a conventional defect of a contact probe regarding a fourth embodiment of the probe device according to the present invention.

FIG. 20 is a side view showing a conventional disadvantage of the probe device with respect to the fourth embodiment of the probe device according to the present invention.

FIG. 21 is a side view showing a contact probe incorporated in a contact probe holding body in a fifth embodiment of the probe device according to the present invention.

FIG. 22 is a view in the direction of arrow D in FIG. 13 relating to a fifth embodiment of the contact probe according to the present invention.

FIG. 23 is a side view showing a fifth embodiment of the contact probe according to the present invention.

FIG. 24 is a side view showing a contact probe incorporated in a contact probe holding body in a sixth embodiment of the probe device according to the present invention.

FIG. 25 is a side view showing a contact probe in a seventh embodiment of the probe device according to the present invention.

FIG. 26 is a side view showing a contact probe incorporated in a contact probe holding body in a seventh embodiment of the probe device according to the present invention.

FIG. 27 is a side view showing a contact probe in an eighth embodiment of the probe device according to the present invention.

FIG. 28 is a side view showing a contact probe incorporated in a contact probe holding body in an eighth embodiment of the probe device according to the present invention.

FIG. 29 is a side view showing a contact probe in a ninth embodiment of the probe device according to the present invention.

FIG. 30 is a side view showing a contact probe incorporated in a contact probe holding body in a ninth embodiment of the probe device according to the present invention.

FIG. 31 shows a tenth contact probe according to the present invention.
FIG. 2 is an exploded perspective view of the probe device (chip carrier) in the embodiment.

FIG. 32 shows a tenth embodiment of the contact probe according to the present invention.
It is an external appearance perspective view of the probe device (chip carrier) in an embodiment.

FIG. 33 is an enlarged GG line sectional view of a main part of FIG. 32;

FIG. 34 shows a tenth contact probe according to the present invention.
It is an expanded sectional view of a contact pin in an embodiment.

FIG. 35 is a tenth embodiment of the contact probe according to the present invention;
It is an enlarged side view of the contact pin in an embodiment.

FIG. 36 is a graph showing the relationship between the Mn concentration and the hardness at the tip of the contact probe according to the present invention.

FIG. 37 is a graph schematically showing a relationship between the thickness of the Ni—Mn alloy layer and the Mn concentration in the method for manufacturing a contact probe according to the present invention.

FIG. 38 is an enlarged sectional view of a main part showing a conventional example of a contact probe according to the present invention.

[Explanation of symbols]

 1,16,701 Contact probe 2 Resin film 3 Pattern wiring 3a Contact pin 10,700 Probe device 13,713 Upper plate 90 LCD (measurement target) 100 Probe device 110 Contact probe holder (support member) 200 Contact probe 201 Resin Film 201a Resin film (wide resin film) 202 Second resin film 300 TABIC (wiring substrate) 301 Terminal 400 Strong elastic film 500 Metal film AU Au layer I IC chip (measurement target) N Ni-Mn alloy layer LM Low Manganese alloy layer HM High manganese alloy layer PI Polyimide resin V Intermediate position

 ──────────────────────────────────────────────────続 き Continuing from the front page (72) Inventor Hideaki Yoshida 12th Techno Park, Mita City, Hyogo Prefecture Inside the Mita Plant of Mitsui Materials Co., Ltd. Noroku Sanritsu Material Co., Ltd. Mita Plant

Claims (12)

[Claims] 1. A contact probe in which a plurality of pattern wirings are formed on a film, and each tip of the pattern wirings is arranged in a protruding state from the film to be a contact pin, and at least the contact pin is a nickel probe. A high manganese alloy layer formed of a manganese alloy and having a manganese concentration of 0.05% by weight or more, and a low manganese alloy layer set to a lower manganese concentration than the high manganese alloy layer. A contact probe which is bent at an intermediate position with the low manganese alloy layer side facing outward. 2. The contact probe according to claim 1, wherein the high manganese alloy layer has a manganese concentration of 1.5% by weight.
A contact probe having the following settings. 3. The contact probe according to claim 1, wherein the low manganese alloy layer has a manganese concentration set gradually higher in a thickness direction toward the high manganese alloy layer. probe. 4. The contact probe according to claim 1, wherein the low manganese alloy layer is annealed. 5. The contact probe according to claim 1, wherein a metal film is directly attached to the film. 6. The contact probe according to claim 5, wherein a second film is provided directly on the metal film. 7. The contact probe according to claim 1, a ferroelastic film disposed on the film and protruding from the film shorter than the contact pins, and the ferroelastic film and the contact. A probe device, comprising: a support member that supports the probe. 8. The probe device according to claim 7, wherein the film is formed longer on the distal end side than the ferroelastic film so that the ferroelastic film acts as a buffer when the contact pin is pressed. A probe device. 9. A method of manufacturing a contact probe, wherein a plurality of pattern wirings are formed on a film, and the tips of the pattern wirings are arranged in a protruding state from the film to be contact pins. A first metal layer forming step of forming a first metal layer of a material to be adhered to or bonded to the material of the contact pin; and applying a mask on the first metal layer, A plating step of forming a second metal layer provided for the contact pin with a nickel-manganese alloy by plating, and removing a portion other than the portion provided for the contact pin on the second metal layer from which the mask has been removed. A film applying step of applying the film to be covered, a portion including the film and a second metal layer, and a portion including the substrate layer and the first metal layer. A separation step of separating, the contact pins, it and a contact pin bending step of bending at the intermediate position, the plating treatment step, the manganese concentration of 0.05 wt%
A high hardness layer forming step of forming a high manganese alloy layer set as described above, and a high toughness layer forming step of forming a low manganese alloy layer set to a lower manganese concentration than the high manganese alloy layer, the contact The method of manufacturing a contact probe, wherein in the pin bending step, the bending is performed with the low manganese alloy layer side being outside. 10. The method for manufacturing a contact probe according to claim 9, wherein in the step of forming the high toughness layer, the manganese concentration of the low manganese alloy layer gradually increases in the thickness direction toward the high manganese alloy layer. A method for manufacturing a contact probe, characterized in that the contact probe is formed as follows. 11. The method for manufacturing a contact probe according to claim 9, further comprising, after the step of forming a high toughness layer, an annealing step of annealing the low manganese alloy layer. Production method. 12. The method of manufacturing a contact probe according to claim 11, wherein the annealing step is performed at a lower heating temperature and a shorter heating time than a temperature and a time at which the high manganese alloy layer is annealed. Probe manufacturing method.