JPS51112184A - Shottky barrier layer gate type twine gates field-effect transistor an d its making - Google Patents
Shottky barrier layer gate type twine gates field-effect transistor an d its makingInfo
- Publication number
- JPS51112184A JPS51112184A JP2374475A JP2374475A JPS51112184A JP S51112184 A JPS51112184 A JP S51112184A JP 2374475 A JP2374475 A JP 2374475A JP 2374475 A JP2374475 A JP 2374475A JP S51112184 A JPS51112184 A JP S51112184A
- Authority
- JP
- Japan
- Prior art keywords
- effect transistor
- making
- barrier layer
- gate type
- layer gate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000005669 field effect Effects 0.000 title abstract 2
- 230000004888 barrier function Effects 0.000 title 1
- 239000002184 metal Substances 0.000 abstract 1
- 230000003071 parasitic effect Effects 0.000 abstract 1
Landscapes
- Junction Field-Effect Transistors (AREA)
Abstract
PURPOSE: How to reduce parasitic resistance between two gate electrodes of schottky type field-effect transistor with twine gates composition and to decrease DC and microwave losses by putting a metal with ohmic contact between its two gate electrodes.
COPYRIGHT: (C)1976,JPO&Japio
Priority Applications (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2374475A JPS51112184A (en) | 1975-02-26 | 1975-02-26 | Shottky barrier layer gate type twine gates field-effect transistor an d its making |
| US05/661,256 US4048646A (en) | 1975-02-26 | 1976-02-25 | Dual-gate schottky barrier gate fet having an intermediate electrode and a method of making same |
| GB7460/76A GB1543363A (en) | 1975-02-26 | 1976-02-25 | Dual-gate schottky barrier gate field effect transistors |
| FR7605289A FR2302592A1 (en) | 1975-02-26 | 1976-02-25 | DOUBLE DOOR SCHOTTKY BARRIER FIELD EFFECT TRANSISTOR |
| DE19762607898 DE2607898A1 (en) | 1975-02-26 | 1976-02-26 | DOUBLE GATE SCHOTTKY FIELD EFFECT TRANSISTOR WITH INTERMEDIATE ELECTRODE AND PROCESS FOR PRODUCING IT |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2374475A JPS51112184A (en) | 1975-02-26 | 1975-02-26 | Shottky barrier layer gate type twine gates field-effect transistor an d its making |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS51112184A true JPS51112184A (en) | 1976-10-04 |
Family
ID=12118806
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2374475A Pending JPS51112184A (en) | 1975-02-26 | 1975-02-26 | Shottky barrier layer gate type twine gates field-effect transistor an d its making |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS51112184A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5397783A (en) * | 1977-02-07 | 1978-08-26 | Westinghouse Electric Corp | Fet pentode transistor |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4852483A (en) * | 1971-10-29 | 1973-07-23 | ||
| JPS4971874A (en) * | 1972-11-10 | 1974-07-11 | ||
| JPS50122882A (en) * | 1974-03-13 | 1975-09-26 |
-
1975
- 1975-02-26 JP JP2374475A patent/JPS51112184A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4852483A (en) * | 1971-10-29 | 1973-07-23 | ||
| JPS4971874A (en) * | 1972-11-10 | 1974-07-11 | ||
| JPS50122882A (en) * | 1974-03-13 | 1975-09-26 |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5397783A (en) * | 1977-02-07 | 1978-08-26 | Westinghouse Electric Corp | Fet pentode transistor |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JPS5279679A (en) | Semiconductor memory device | |
| JPS535581A (en) | Schottky gate type field effect transistor | |
| JPS5222480A (en) | Insulating gate field effect transistor | |
| JPS5267982A (en) | Manufacture of schottky barrier type field effect transistor | |
| JPS5223277A (en) | Method of manufacteuring insulating gate type field effect transistor | |
| JPS51112184A (en) | Shottky barrier layer gate type twine gates field-effect transistor an d its making | |
| JPS52100979A (en) | Production and drive of dual gate schottky barrier gate type fieled ef fect transistor | |
| JPS546777A (en) | Field effect type transistor | |
| JPS5691477A (en) | Semiconductor | |
| JPS5245280A (en) | Field effect transistor of schottky barrier type | |
| JPS5322378A (en) | Production of field effect transistor s | |
| JPS52108777A (en) | Field-effect transistor for schottky barrier layer | |
| JPS5279881A (en) | Production of gaas schottky barrier gate type field effect transistor | |
| JPS5263074A (en) | Insulated gate type field effect transistor and its production | |
| JPS5624979A (en) | Field effect transistor | |
| JPS5364481A (en) | Production of schottky type field effect transistor | |
| JPS52147983A (en) | Insulation gate type semiconductor device | |
| JPS52128078A (en) | Manufacture of field effect transistor | |
| JPS5378785A (en) | Field effect transistor | |
| JPS5255387A (en) | Schottky barrier type field effect transistor | |
| JPS5467779A (en) | Schottky barrier gate type field effect transistor | |
| JPS538080A (en) | Insulated gate type field effect transistor | |
| JPS51151080A (en) | Schottky barrier gate fet | |
| JPS5330880A (en) | High frequency thyristor | |
| JPS52100877A (en) | Field effect transistor of junction type |