JPS535581A - Schottky gate type field effect transistor - Google Patents

Schottky gate type field effect transistor

Info

Publication number
JPS535581A
JPS535581A JP7947876A JP7947876A JPS535581A JP S535581 A JPS535581 A JP S535581A JP 7947876 A JP7947876 A JP 7947876A JP 7947876 A JP7947876 A JP 7947876A JP S535581 A JPS535581 A JP S535581A
Authority
JP
Japan
Prior art keywords
field effect
effect transistor
type field
gate type
schottky gate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP7947876A
Other languages
Japanese (ja)
Inventor
Yoshinori Yamada
Kiyoo Kamei
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP7947876A priority Critical patent/JPS535581A/en
Publication of JPS535581A publication Critical patent/JPS535581A/en
Pending legal-status Critical Current

Links

Landscapes

  • Junction Field-Effect Transistors (AREA)

Abstract

PURPOSE: To increase the operation efficiency of SG-FET by setting the thickness of the operation layer small right under the gate electrode and large right under the sourcedrain electrode respectively.
COPYRIGHT: (C)1978,JPO&Japio
JP7947876A 1976-07-06 1976-07-06 Schottky gate type field effect transistor Pending JPS535581A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7947876A JPS535581A (en) 1976-07-06 1976-07-06 Schottky gate type field effect transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7947876A JPS535581A (en) 1976-07-06 1976-07-06 Schottky gate type field effect transistor

Publications (1)

Publication Number Publication Date
JPS535581A true JPS535581A (en) 1978-01-19

Family

ID=13690992

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7947876A Pending JPS535581A (en) 1976-07-06 1976-07-06 Schottky gate type field effect transistor

Country Status (1)

Country Link
JP (1) JPS535581A (en)

Cited By (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54148384A (en) * 1978-05-12 1979-11-20 Nec Corp Power-use high dielectric strength field effect transistor
JPS5632771A (en) * 1979-08-27 1981-04-02 Fujitsu Ltd Manufacture of semiconductor device
JPS56131964A (en) * 1980-02-19 1981-10-15 Xerox Corp High speed vlsi self-alignment schottky metal and semiconductor field effect transistor and method of producing same
JPS57126168A (en) * 1981-01-29 1982-08-05 Sumitomo Electric Ind Ltd Schottky gate field effect transistor
JPS57177572A (en) * 1981-04-24 1982-11-01 Sumitomo Electric Ind Ltd Field effect transistor and manufacture thereof
JPS57177571A (en) * 1981-04-24 1982-11-01 Sumitomo Electric Ind Ltd Field effect transistor and manufacture thereof
JPS5834980A (en) * 1981-08-25 1983-03-01 Sumitomo Electric Ind Ltd Schottky gate field effect transistor
JPS5852881A (en) * 1981-09-25 1983-03-29 Oki Electric Ind Co Ltd Manufacture of semiconductor element
JPS5892274A (en) * 1981-11-28 1983-06-01 Mitsubishi Electric Corp Manufacture of field effect transistor
JPS58103175A (en) * 1981-12-15 1983-06-20 Matsushita Electric Ind Co Ltd Semiconductor device and manufacture thereof
JPS58115867A (en) * 1981-12-28 1983-07-09 Fujitsu Ltd Field-effect type semiconductor device
JPS58123778A (en) * 1982-01-19 1983-07-23 Sumitomo Electric Ind Ltd Schottky gate field-effect transistor and its manufacture
JPS58124276A (en) * 1982-01-20 1983-07-23 Sumitomo Electric Ind Ltd Schottky gate field effect transistor and manufacture thereof
JPS5925276A (en) * 1982-08-02 1984-02-09 Sumitomo Electric Ind Ltd shot key gate field effect transistor
JPH0249436A (en) * 1989-03-18 1990-02-19 Fujitsu Ltd Manufacture of semiconductor device
US5309007A (en) * 1991-09-30 1994-05-03 The United States Of America As Represented By The Secretary Of The Navy Junction field effect transistor with lateral gate voltage swing (GVS-JFET)
CN101964363A (en) * 2010-08-06 2011-02-02 电子科技大学 Metal-semiconductor field effect transistor with stepped buffer layer structure
CN106910775A (en) * 2017-03-20 2017-06-30 西安电子科技大学 A kind of 4H SiC metal-semiconductor field effect transistors with many depression cushions

Cited By (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54148384A (en) * 1978-05-12 1979-11-20 Nec Corp Power-use high dielectric strength field effect transistor
JPS5632771A (en) * 1979-08-27 1981-04-02 Fujitsu Ltd Manufacture of semiconductor device
JPS56131964A (en) * 1980-02-19 1981-10-15 Xerox Corp High speed vlsi self-alignment schottky metal and semiconductor field effect transistor and method of producing same
JPS57126168A (en) * 1981-01-29 1982-08-05 Sumitomo Electric Ind Ltd Schottky gate field effect transistor
JPS57177572A (en) * 1981-04-24 1982-11-01 Sumitomo Electric Ind Ltd Field effect transistor and manufacture thereof
JPS57177571A (en) * 1981-04-24 1982-11-01 Sumitomo Electric Ind Ltd Field effect transistor and manufacture thereof
JPS5834980A (en) * 1981-08-25 1983-03-01 Sumitomo Electric Ind Ltd Schottky gate field effect transistor
JPS5852881A (en) * 1981-09-25 1983-03-29 Oki Electric Ind Co Ltd Manufacture of semiconductor element
JPS5892274A (en) * 1981-11-28 1983-06-01 Mitsubishi Electric Corp Manufacture of field effect transistor
JPS58103175A (en) * 1981-12-15 1983-06-20 Matsushita Electric Ind Co Ltd Semiconductor device and manufacture thereof
JPS58115867A (en) * 1981-12-28 1983-07-09 Fujitsu Ltd Field-effect type semiconductor device
JPS58123778A (en) * 1982-01-19 1983-07-23 Sumitomo Electric Ind Ltd Schottky gate field-effect transistor and its manufacture
JPS58124276A (en) * 1982-01-20 1983-07-23 Sumitomo Electric Ind Ltd Schottky gate field effect transistor and manufacture thereof
JPS5925276A (en) * 1982-08-02 1984-02-09 Sumitomo Electric Ind Ltd shot key gate field effect transistor
JPH0249436A (en) * 1989-03-18 1990-02-19 Fujitsu Ltd Manufacture of semiconductor device
US5309007A (en) * 1991-09-30 1994-05-03 The United States Of America As Represented By The Secretary Of The Navy Junction field effect transistor with lateral gate voltage swing (GVS-JFET)
CN101964363A (en) * 2010-08-06 2011-02-02 电子科技大学 Metal-semiconductor field effect transistor with stepped buffer layer structure
CN106910775A (en) * 2017-03-20 2017-06-30 西安电子科技大学 A kind of 4H SiC metal-semiconductor field effect transistors with many depression cushions

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