JPS51114931A - Photoresist pattern formation method - Google Patents

Photoresist pattern formation method

Info

Publication number
JPS51114931A
JPS51114931A JP3906375A JP3906375A JPS51114931A JP S51114931 A JPS51114931 A JP S51114931A JP 3906375 A JP3906375 A JP 3906375A JP 3906375 A JP3906375 A JP 3906375A JP S51114931 A JPS51114931 A JP S51114931A
Authority
JP
Japan
Prior art keywords
pattern formation
photoresist pattern
formation method
photoresist
overlaid
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP3906375A
Other languages
Japanese (ja)
Inventor
Michiharu Nakamura
Kunio Aiki
Shigeo Yamashita
Junichi Umeda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP3906375A priority Critical patent/JPS51114931A/en
Publication of JPS51114931A publication Critical patent/JPS51114931A/en
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/094—Multilayer resist systems, e.g. planarising layers

Landscapes

  • Engineering & Computer Science (AREA)
  • Architecture (AREA)
  • Structural Engineering (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Manufacturing Of Printed Circuit Boards (AREA)

Abstract

PURPOSE:The second photoresist is overlaid on the first photoresist which has been already exposed and by developing after the exposure, the accuracy of fine pattern formation is improved.
JP3906375A 1975-04-02 1975-04-02 Photoresist pattern formation method Pending JPS51114931A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3906375A JPS51114931A (en) 1975-04-02 1975-04-02 Photoresist pattern formation method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3906375A JPS51114931A (en) 1975-04-02 1975-04-02 Photoresist pattern formation method

Publications (1)

Publication Number Publication Date
JPS51114931A true JPS51114931A (en) 1976-10-09

Family

ID=12542661

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3906375A Pending JPS51114931A (en) 1975-04-02 1975-04-02 Photoresist pattern formation method

Country Status (1)

Country Link
JP (1) JPS51114931A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0002795A3 (en) * 1977-12-30 1979-08-08 International Business Machines Corporation Process for the fabrication of masks for lithographic processes using a photoresist
JPS57100428A (en) * 1980-12-16 1982-06-22 Matsushita Electronics Corp Method for photomechanical process
JPH0769616B2 (en) * 1984-08-13 1995-07-31 エイ・ティ・アンド・ティ グローバル インフォメーション ソルーションズ インターナショナル インコーポレイテッド Method of forming photoresist layer
CN102231045A (en) * 2011-06-28 2011-11-02 上海宏力半导体制造有限公司 Photoetching method and semiconductor device

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0002795A3 (en) * 1977-12-30 1979-08-08 International Business Machines Corporation Process for the fabrication of masks for lithographic processes using a photoresist
JPS57100428A (en) * 1980-12-16 1982-06-22 Matsushita Electronics Corp Method for photomechanical process
JPH0769616B2 (en) * 1984-08-13 1995-07-31 エイ・ティ・アンド・ティ グローバル インフォメーション ソルーションズ インターナショナル インコーポレイテッド Method of forming photoresist layer
CN102231045A (en) * 2011-06-28 2011-11-02 上海宏力半导体制造有限公司 Photoetching method and semiconductor device

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