JPS51116687A - Semiconductor integrated circuit device - Google Patents

Semiconductor integrated circuit device

Info

Publication number
JPS51116687A
JPS51116687A JP50041337A JP4133775A JPS51116687A JP S51116687 A JPS51116687 A JP S51116687A JP 50041337 A JP50041337 A JP 50041337A JP 4133775 A JP4133775 A JP 4133775A JP S51116687 A JPS51116687 A JP S51116687A
Authority
JP
Japan
Prior art keywords
integrated circuit
semiconductor integrated
circuit device
compatibly
constructed
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP50041337A
Other languages
Japanese (ja)
Other versions
JPS5513585B2 (en
Inventor
Tomoyuki Watabe
Takahiro Okabe
Yoshito Omura
Hiroshi Kodera
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP50041337A priority Critical patent/JPS51116687A/en
Publication of JPS51116687A publication Critical patent/JPS51116687A/en
Publication of JPS5513585B2 publication Critical patent/JPS5513585B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/65—Integrated injection logic
    • H10D84/658—Integrated injection logic integrated in combination with analog structures

Landscapes

  • Bipolar Transistors (AREA)
  • Bipolar Integrated Circuits (AREA)

Abstract

PURPOSE:A device which is constructed compatibly with a standard IC, is provided with an injection electrode having a high injection efficiency, and is effective in obtaining an I<2>L of a high hFE longitudinal transistor.
JP50041337A 1975-04-07 1975-04-07 Semiconductor integrated circuit device Granted JPS51116687A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP50041337A JPS51116687A (en) 1975-04-07 1975-04-07 Semiconductor integrated circuit device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP50041337A JPS51116687A (en) 1975-04-07 1975-04-07 Semiconductor integrated circuit device

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP56001256A Division JPS6031107B2 (en) 1981-01-09 1981-01-09 Semiconductor integrated circuit device

Publications (2)

Publication Number Publication Date
JPS51116687A true JPS51116687A (en) 1976-10-14
JPS5513585B2 JPS5513585B2 (en) 1980-04-10

Family

ID=12605693

Family Applications (1)

Application Number Title Priority Date Filing Date
JP50041337A Granted JPS51116687A (en) 1975-04-07 1975-04-07 Semiconductor integrated circuit device

Country Status (1)

Country Link
JP (1) JPS51116687A (en)

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5261978A (en) * 1975-11-18 1977-05-21 Matsushita Electric Ind Co Ltd Semiconductor integrated circuit device and its production
JPS5344186A (en) * 1976-10-04 1978-04-20 Toshiba Corp Semiconductor device
JPS5388586A (en) * 1977-01-12 1978-08-04 Rca Corp Semiconductor ic
JPS5585052A (en) * 1978-02-15 1980-06-26 Rca Corp Semiconductor integrated circuit and method of fabricating same
JPS55134957A (en) * 1979-04-10 1980-10-21 Seiko Instr & Electronics Ltd Semiconductor device
JPS5618460A (en) * 1979-07-23 1981-02-21 Toshiba Corp Semiconductor integrated circuit
JPS5619659A (en) * 1979-07-27 1981-02-24 Hitachi Ltd Manufacture of semiconductor device
JPS5623770A (en) * 1979-08-06 1981-03-06 Toshiba Corp Manufacture of semiconductor device
JPS5690554A (en) * 1979-12-22 1981-07-22 Toshiba Corp Semiconductor device

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4940686A (en) * 1972-08-23 1974-04-16
JPS5010586A (en) * 1973-05-25 1975-02-03
JPS54156A (en) * 1977-06-01 1979-01-05 Kubota Ltd Operation device of mechanical stopless speed change device

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4940686A (en) * 1972-08-23 1974-04-16
JPS5010586A (en) * 1973-05-25 1975-02-03
JPS54156A (en) * 1977-06-01 1979-01-05 Kubota Ltd Operation device of mechanical stopless speed change device

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5261978A (en) * 1975-11-18 1977-05-21 Matsushita Electric Ind Co Ltd Semiconductor integrated circuit device and its production
JPS5344186A (en) * 1976-10-04 1978-04-20 Toshiba Corp Semiconductor device
JPS5388586A (en) * 1977-01-12 1978-08-04 Rca Corp Semiconductor ic
JPS5585052A (en) * 1978-02-15 1980-06-26 Rca Corp Semiconductor integrated circuit and method of fabricating same
JPS55134957A (en) * 1979-04-10 1980-10-21 Seiko Instr & Electronics Ltd Semiconductor device
JPS5618460A (en) * 1979-07-23 1981-02-21 Toshiba Corp Semiconductor integrated circuit
JPS5619659A (en) * 1979-07-27 1981-02-24 Hitachi Ltd Manufacture of semiconductor device
JPS5623770A (en) * 1979-08-06 1981-03-06 Toshiba Corp Manufacture of semiconductor device
JPS5690554A (en) * 1979-12-22 1981-07-22 Toshiba Corp Semiconductor device

Also Published As

Publication number Publication date
JPS5513585B2 (en) 1980-04-10

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