JPS5618460A - Semiconductor integrated circuit - Google Patents

Semiconductor integrated circuit

Info

Publication number
JPS5618460A
JPS5618460A JP9258579A JP9258579A JPS5618460A JP S5618460 A JPS5618460 A JP S5618460A JP 9258579 A JP9258579 A JP 9258579A JP 9258579 A JP9258579 A JP 9258579A JP S5618460 A JPS5618460 A JP S5618460A
Authority
JP
Japan
Prior art keywords
type
collector
emitter
transistor
bipolar transistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP9258579A
Other languages
Japanese (ja)
Inventor
Minoru Taguchi
Akihiko Furukawa
Koichi Kanzaki
Hajime Sasaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP9258579A priority Critical patent/JPS5618460A/en
Priority to DE3020609A priority patent/DE3020609C2/en
Priority to GB8017929A priority patent/GB2054263B/en
Publication of JPS5618460A publication Critical patent/JPS5618460A/en
Priority to US06/305,721 priority patent/US4404738A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/211—Design considerations for internal polarisation

Landscapes

  • Bipolar Integrated Circuits (AREA)
  • Bipolar Transistors (AREA)

Abstract

PURPOSE:To improve the characteristics of both an I<2>L and a bipolar transistor by reducing the collector layer of a vertical transistor of the I<2>L lower in density than the emitter layer of the normal bipolar transistor on the same substrate. CONSTITUTION:A vertical bipolar transistor BT consists of an N-type emitter 8, a P-type base 5, an N-type collector 2 and an N-type collector region 10 of high impurity density extended to a buried layer 4. A PNP-type transistor forming a logic gate element I<2>L consists of a P-type emitter 7, an N-type base 2 and a P-type collector 6. An NPN-type transistor consists of an N-type collector 9, a P-type base 6 and an N-type emitter 2, and an N-type emitter region of high impurity density extended to a buried layer 4. The impurity density of the collector 8 forming the I<2>L is lower than that of the emitter 9 forming the bipolar transistor BT.
JP9258579A 1979-05-31 1979-07-23 Semiconductor integrated circuit Pending JPS5618460A (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP9258579A JPS5618460A (en) 1979-07-23 1979-07-23 Semiconductor integrated circuit
DE3020609A DE3020609C2 (en) 1979-05-31 1980-05-30 Method for manufacturing an integrated circuit having at least one I → 2 → L element
GB8017929A GB2054263B (en) 1979-05-31 1980-06-02 Integrated circuit device
US06/305,721 US4404738A (en) 1979-05-31 1981-09-25 Method of fabricating an I2 L element and a linear transistor on one chip

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9258579A JPS5618460A (en) 1979-07-23 1979-07-23 Semiconductor integrated circuit

Publications (1)

Publication Number Publication Date
JPS5618460A true JPS5618460A (en) 1981-02-21

Family

ID=14058507

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9258579A Pending JPS5618460A (en) 1979-05-31 1979-07-23 Semiconductor integrated circuit

Country Status (1)

Country Link
JP (1) JPS5618460A (en)

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS516488A (en) * 1974-07-05 1976-01-20 Hitachi Ltd
JPS516487A (en) * 1974-07-05 1976-01-20 Hitachi Ltd
JPS5192188A (en) * 1975-02-10 1976-08-12 Handotaisochi no seizohoho
JPS51116687A (en) * 1975-04-07 1976-10-14 Hitachi Ltd Semiconductor integrated circuit device
JPS533781A (en) * 1976-06-30 1978-01-13 Mitsubishi Electric Corp Semiconductor integrated circuit

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS516488A (en) * 1974-07-05 1976-01-20 Hitachi Ltd
JPS516487A (en) * 1974-07-05 1976-01-20 Hitachi Ltd
JPS5192188A (en) * 1975-02-10 1976-08-12 Handotaisochi no seizohoho
JPS51116687A (en) * 1975-04-07 1976-10-14 Hitachi Ltd Semiconductor integrated circuit device
JPS533781A (en) * 1976-06-30 1978-01-13 Mitsubishi Electric Corp Semiconductor integrated circuit

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