JPS51135363A - Method of manufacturing semiconductors and its equipment - Google Patents
Method of manufacturing semiconductors and its equipmentInfo
- Publication number
- JPS51135363A JPS51135363A JP50060401A JP6040175A JPS51135363A JP S51135363 A JPS51135363 A JP S51135363A JP 50060401 A JP50060401 A JP 50060401A JP 6040175 A JP6040175 A JP 6040175A JP S51135363 A JPS51135363 A JP S51135363A
- Authority
- JP
- Japan
- Prior art keywords
- equipment
- manufacturing semiconductors
- wafer
- heating
- make
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
Landscapes
- Chemical & Material Sciences (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
PURPOSE:To make the film thickness of the vapor phase grown film uniform by heating the peripheral section a semiconductor wafer at a temperature higher than that of the central section of te wafer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP50060401A JPS51135363A (en) | 1975-05-19 | 1975-05-19 | Method of manufacturing semiconductors and its equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP50060401A JPS51135363A (en) | 1975-05-19 | 1975-05-19 | Method of manufacturing semiconductors and its equipment |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS51135363A true JPS51135363A (en) | 1976-11-24 |
Family
ID=13141094
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP50060401A Pending JPS51135363A (en) | 1975-05-19 | 1975-05-19 | Method of manufacturing semiconductors and its equipment |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS51135363A (en) |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS58111932U (en) * | 1982-01-25 | 1983-07-30 | ウシオ電機株式会社 | heater |
| JPS60140765U (en) * | 1984-12-20 | 1985-09-18 | 松下電子工業株式会社 | plasma deposition equipment |
| JPH02186623A (en) * | 1989-01-13 | 1990-07-20 | Toshiba Ceramics Co Ltd | Susceptor |
| JPH02185973A (en) * | 1989-01-13 | 1990-07-20 | Tokyo Electron Ltd | Formation of metal silicide film |
| JPH0623240U (en) * | 1992-08-21 | 1994-03-25 | 日新電機株式会社 | Susceptor for semiconductor manufacturing equipment |
| JP2002203797A (en) * | 2001-09-27 | 2002-07-19 | Hitachi Kokusai Electric Inc | Semiconductor manufacturing equipment |
| JP2003515949A (en) * | 1999-11-30 | 2003-05-07 | ウエファーマスターズ, インコーポレイテッド | Single wafer annealing oven |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4945681A (en) * | 1972-07-01 | 1974-05-01 |
-
1975
- 1975-05-19 JP JP50060401A patent/JPS51135363A/en active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4945681A (en) * | 1972-07-01 | 1974-05-01 |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS58111932U (en) * | 1982-01-25 | 1983-07-30 | ウシオ電機株式会社 | heater |
| JPS60140765U (en) * | 1984-12-20 | 1985-09-18 | 松下電子工業株式会社 | plasma deposition equipment |
| JPH02186623A (en) * | 1989-01-13 | 1990-07-20 | Toshiba Ceramics Co Ltd | Susceptor |
| JPH02185973A (en) * | 1989-01-13 | 1990-07-20 | Tokyo Electron Ltd | Formation of metal silicide film |
| JPH0623240U (en) * | 1992-08-21 | 1994-03-25 | 日新電機株式会社 | Susceptor for semiconductor manufacturing equipment |
| JP2003515949A (en) * | 1999-11-30 | 2003-05-07 | ウエファーマスターズ, インコーポレイテッド | Single wafer annealing oven |
| JP2002203797A (en) * | 2001-09-27 | 2002-07-19 | Hitachi Kokusai Electric Inc | Semiconductor manufacturing equipment |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JPS51135363A (en) | Method of manufacturing semiconductors and its equipment | |
| JPS5265662A (en) | Method and device for diffusion to semiconductor substrate by high fre quency induction heating | |
| JPS5246784A (en) | Process for production of semiconductor device | |
| JPS5324277A (en) | Semiconductor devic e and its production | |
| JPS5240059A (en) | Process for production of semiconductor device | |
| JPS5271171A (en) | Production of epitaxial wafer | |
| JPS524167A (en) | Manufacturing process of p-n junction type solid element | |
| JPS53100767A (en) | Production of semiconductor device | |
| JPS5258379A (en) | Production of semiconductor element | |
| JPS5740939A (en) | P-n junction formation | |
| JPS5391076A (en) | Gas phase reaction apparatus | |
| JPS5273673A (en) | Production of semiconductor device | |
| JPS5351964A (en) | Selective growth method for semiconductor crystal | |
| JPS5311574A (en) | Production of semiconductor device | |
| JPS5263673A (en) | Production of semiconductor device | |
| JPS5223265A (en) | Method of processing semiconductor materials | |
| JPS5367353A (en) | Manufacturing device of semiconductor crystal | |
| JPS5326663A (en) | Manu facture of semiconductor device | |
| JPS5226163A (en) | Manufacturing method of semi-conductor crystal | |
| JPS51132085A (en) | Manufacturing method of semiconductor device | |
| JPS526091A (en) | Production method of semiconductor device | |
| JPS5246777A (en) | Semiconductor device | |
| JPS51132763A (en) | Production method of semiconductor device | |
| JPS5226162A (en) | Manufacturing method of semi-conductor crystal | |
| JPS5245267A (en) | Process for production of semiconductor device |