JPS5366181A - High dielectric strength mis type transistor - Google Patents

High dielectric strength mis type transistor

Info

Publication number
JPS5366181A
JPS5366181A JP14124276A JP14124276A JPS5366181A JP S5366181 A JPS5366181 A JP S5366181A JP 14124276 A JP14124276 A JP 14124276A JP 14124276 A JP14124276 A JP 14124276A JP S5366181 A JPS5366181 A JP S5366181A
Authority
JP
Japan
Prior art keywords
type transistor
high dielectric
dielectric strength
mis type
type
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP14124276A
Other languages
Japanese (ja)
Inventor
Hideshi Ito
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP14124276A priority Critical patent/JPS5366181A/en
Publication of JPS5366181A publication Critical patent/JPS5366181A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE: To produce a MISFET of small on-resistance and high breakdown voltage by disposing an N type layer in adjacent to the N+ type drain layer of an N- type Si substrate and providing the electrode of the same potential as that of the source through an insulation film on the N type layer.
COPYRIGHT: (C)1978,JPO&Japio
JP14124276A 1976-11-26 1976-11-26 High dielectric strength mis type transistor Pending JPS5366181A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14124276A JPS5366181A (en) 1976-11-26 1976-11-26 High dielectric strength mis type transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14124276A JPS5366181A (en) 1976-11-26 1976-11-26 High dielectric strength mis type transistor

Publications (1)

Publication Number Publication Date
JPS5366181A true JPS5366181A (en) 1978-06-13

Family

ID=15287388

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14124276A Pending JPS5366181A (en) 1976-11-26 1976-11-26 High dielectric strength mis type transistor

Country Status (1)

Country Link
JP (1) JPS5366181A (en)

Cited By (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58206164A (en) * 1982-05-10 1983-12-01 エヌ・ベ−・フイリツプス・フル−イランペンフアブリケン Semiconductor device and its manufacturing method
JPH01162372A (en) * 1987-12-18 1989-06-26 Matsushita Electron Corp Mis transistor
US4947232A (en) * 1980-03-22 1990-08-07 Sharp Kabushiki Kaisha High voltage MOS transistor
US5191396A (en) * 1978-10-13 1993-03-02 International Rectifier Corp. High power mosfet with low on-resistance and high breakdown voltage
US5338961A (en) * 1978-10-13 1994-08-16 International Rectifier Corporation High power MOSFET with low on-resistance and high breakdown voltage
US5578509A (en) * 1993-04-23 1996-11-26 Mitsubishi Denki Kabushiki Kaisha Method of making a field effect transistor
US5663080A (en) * 1991-11-29 1997-09-02 Sgs-Thomson Microelectronics, S.R.L. Process for manufacturing MOS-type integrated circuits
US5744372A (en) * 1995-04-12 1998-04-28 National Semiconductor Corporation Fabrication of complementary field-effect transistors each having multi-part channel
US5798554A (en) * 1995-02-24 1998-08-25 Consorzio Per La Ricerca Sulla Microelettronica Nel Mezzogiorno MOS-technology power device integrated structure and manufacturing process thereof
US5817546A (en) * 1994-06-23 1998-10-06 Stmicroelectronics S.R.L. Process of making a MOS-technology power device
US5841167A (en) * 1995-12-28 1998-11-24 Sgs-Thomson Microelectronics S.R.L. MOS-technology power device integrated structure
US5869371A (en) * 1995-06-07 1999-02-09 Stmicroelectronics, Inc. Structure and process for reducing the on-resistance of mos-gated power devices
US5874338A (en) * 1994-06-23 1999-02-23 Sgs-Thomson Microelectronics S.R.L. MOS-technology power device and process of making same
US5981343A (en) * 1995-10-30 1999-11-09 Sgs-Thomas Microelectronics, S.R.L. Single feature size mos technology power device
US6020227A (en) * 1995-09-12 2000-02-01 National Semiconductor Corporation Fabrication of multiple field-effect transistor structure having local threshold-adjust doping
US6030870A (en) * 1995-10-30 2000-02-29 Sgs-Thomson Microelectronics, S.R.L. High density MOS technology power device
US6228719B1 (en) 1995-11-06 2001-05-08 Stmicroelectronics S.R.L. MOS technology power device with low output resistance and low capacitance, and related manufacturing process
US6492691B2 (en) 1998-05-26 2002-12-10 Stmicroelectronics S.R.L. High integration density MOS technology power device structure

Cited By (29)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5742087A (en) * 1978-10-13 1998-04-21 International Rectifier Corporation High power MOSFET with low on-resistance and high breakdown voltage
US5191396A (en) * 1978-10-13 1993-03-02 International Rectifier Corp. High power mosfet with low on-resistance and high breakdown voltage
US5338961A (en) * 1978-10-13 1994-08-16 International Rectifier Corporation High power MOSFET with low on-resistance and high breakdown voltage
US5598018A (en) * 1978-10-13 1997-01-28 International Rectifier Corporation High power MOSFET with low on-resistance and high breakdown voltage
US4947232A (en) * 1980-03-22 1990-08-07 Sharp Kabushiki Kaisha High voltage MOS transistor
JPS58206164A (en) * 1982-05-10 1983-12-01 エヌ・ベ−・フイリツプス・フル−イランペンフアブリケン Semiconductor device and its manufacturing method
JPH01162372A (en) * 1987-12-18 1989-06-26 Matsushita Electron Corp Mis transistor
US5696399A (en) * 1991-11-29 1997-12-09 Sgs-Thomson Microelectronics S.R.L. Process for manufacturing MOS-type integrated circuits
US5663080A (en) * 1991-11-29 1997-09-02 Sgs-Thomson Microelectronics, S.R.L. Process for manufacturing MOS-type integrated circuits
US5578509A (en) * 1993-04-23 1996-11-26 Mitsubishi Denki Kabushiki Kaisha Method of making a field effect transistor
US5817546A (en) * 1994-06-23 1998-10-06 Stmicroelectronics S.R.L. Process of making a MOS-technology power device
US5874338A (en) * 1994-06-23 1999-02-23 Sgs-Thomson Microelectronics S.R.L. MOS-technology power device and process of making same
US5798554A (en) * 1995-02-24 1998-08-25 Consorzio Per La Ricerca Sulla Microelettronica Nel Mezzogiorno MOS-technology power device integrated structure and manufacturing process thereof
US6111297A (en) * 1995-02-24 2000-08-29 Consorzio Per La Ricerca Sulla Microelettronica Nel Mezzogiorno MOS-technology power device integrated structure and manufacturing process thereof
US6078082A (en) * 1995-04-12 2000-06-20 National Semiconductor Corporation Field-effect transistor having multi-part channel
US5744372A (en) * 1995-04-12 1998-04-28 National Semiconductor Corporation Fabrication of complementary field-effect transistors each having multi-part channel
US6576966B1 (en) 1995-04-12 2003-06-10 National Semiconductor Corporation Field-effect transistor having multi-part channel
US5869371A (en) * 1995-06-07 1999-02-09 Stmicroelectronics, Inc. Structure and process for reducing the on-resistance of mos-gated power devices
US6046473A (en) * 1995-06-07 2000-04-04 Stmicroelectronics, Inc. Structure and process for reducing the on-resistance of MOS-gated power devices
US6020227A (en) * 1995-09-12 2000-02-01 National Semiconductor Corporation Fabrication of multiple field-effect transistor structure having local threshold-adjust doping
US6030870A (en) * 1995-10-30 2000-02-29 Sgs-Thomson Microelectronics, S.R.L. High density MOS technology power device
US6054737A (en) * 1995-10-30 2000-04-25 Sgs-Thomson Microelectronics S.R.L. High density MOS technology power device
US6064087A (en) * 1995-10-30 2000-05-16 Sgs-Thomson Microelectronics, S.R.L. Single feature size MOS technology power device
US5985721A (en) * 1995-10-30 1999-11-16 Sgs-Thomson Microelectronics, S.R.L. Single feature size MOS technology power device
US5981343A (en) * 1995-10-30 1999-11-09 Sgs-Thomas Microelectronics, S.R.L. Single feature size mos technology power device
US6228719B1 (en) 1995-11-06 2001-05-08 Stmicroelectronics S.R.L. MOS technology power device with low output resistance and low capacitance, and related manufacturing process
US6051862A (en) * 1995-12-28 2000-04-18 Sgs-Thomson Microelectronics S.R.L. MOS-technology power device integrated structure
US5841167A (en) * 1995-12-28 1998-11-24 Sgs-Thomson Microelectronics S.R.L. MOS-technology power device integrated structure
US6492691B2 (en) 1998-05-26 2002-12-10 Stmicroelectronics S.R.L. High integration density MOS technology power device structure

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