JPS51138385A - Method for liquid phase epitaxial growth - Google Patents

Method for liquid phase epitaxial growth

Info

Publication number
JPS51138385A
JPS51138385A JP6317075A JP6317075A JPS51138385A JP S51138385 A JPS51138385 A JP S51138385A JP 6317075 A JP6317075 A JP 6317075A JP 6317075 A JP6317075 A JP 6317075A JP S51138385 A JPS51138385 A JP S51138385A
Authority
JP
Japan
Prior art keywords
liquid phase
epitaxial growth
phase epitaxial
zga
zas
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP6317075A
Other languages
Japanese (ja)
Other versions
JPS5427233B2 (en
Inventor
Ganzo Iwane
Yoshitaka Furukawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NTT Inc
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP6317075A priority Critical patent/JPS51138385A/en
Publication of JPS51138385A publication Critical patent/JPS51138385A/en
Publication of JPS5427233B2 publication Critical patent/JPS5427233B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Led Devices (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

PURPOSE: To enable the liquid phase epitaxial growth again for Al,zGa1 - zAs by removing the oxide film formed by atmospheric air on a Al,xGa1 - xAs layer.
COPYRIGHT: (C)1976,JPO&Japio
JP6317075A 1975-05-27 1975-05-27 Method for liquid phase epitaxial growth Granted JPS51138385A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP6317075A JPS51138385A (en) 1975-05-27 1975-05-27 Method for liquid phase epitaxial growth

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6317075A JPS51138385A (en) 1975-05-27 1975-05-27 Method for liquid phase epitaxial growth

Publications (2)

Publication Number Publication Date
JPS51138385A true JPS51138385A (en) 1976-11-29
JPS5427233B2 JPS5427233B2 (en) 1979-09-08

Family

ID=13221500

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6317075A Granted JPS51138385A (en) 1975-05-27 1975-05-27 Method for liquid phase epitaxial growth

Country Status (1)

Country Link
JP (1) JPS51138385A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5464461A (en) * 1977-10-31 1979-05-24 Mitsubishi Electric Corp Liquid phase epitaxial growth method

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5464461A (en) * 1977-10-31 1979-05-24 Mitsubishi Electric Corp Liquid phase epitaxial growth method

Also Published As

Publication number Publication date
JPS5427233B2 (en) 1979-09-08

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