JPS51140470A - Method of cutting semiconductor crystal - Google Patents

Method of cutting semiconductor crystal

Info

Publication number
JPS51140470A
JPS51140470A JP6429275A JP6429275A JPS51140470A JP S51140470 A JPS51140470 A JP S51140470A JP 6429275 A JP6429275 A JP 6429275A JP 6429275 A JP6429275 A JP 6429275A JP S51140470 A JPS51140470 A JP S51140470A
Authority
JP
Japan
Prior art keywords
semiconductor crystal
cutting semiconductor
cutting
surface polishing
polishing treatment
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP6429275A
Other languages
Japanese (ja)
Inventor
Nobuo Konishi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP6429275A priority Critical patent/JPS51140470A/en
Publication of JPS51140470A publication Critical patent/JPS51140470A/en
Pending legal-status Critical Current

Links

Landscapes

  • Electrical Discharge Machining, Electrochemical Machining, And Combined Machining (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)

Abstract

PURPOSE: To reduce working strain in wafer fabricating step by cutting semiconductor crystal by utilizing electrochemical process to omit surface polishing treatment thereafter.
COPYRIGHT: (C)1976,JPO&Japio
JP6429275A 1975-05-30 1975-05-30 Method of cutting semiconductor crystal Pending JPS51140470A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP6429275A JPS51140470A (en) 1975-05-30 1975-05-30 Method of cutting semiconductor crystal

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6429275A JPS51140470A (en) 1975-05-30 1975-05-30 Method of cutting semiconductor crystal

Publications (1)

Publication Number Publication Date
JPS51140470A true JPS51140470A (en) 1976-12-03

Family

ID=13254005

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6429275A Pending JPS51140470A (en) 1975-05-30 1975-05-30 Method of cutting semiconductor crystal

Country Status (1)

Country Link
JP (1) JPS51140470A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH09193137A (en) * 1996-01-16 1997-07-29 Cree Res Inc Production of silicon carbide wafer and wafer of 4h silicon carbide
US6242709B1 (en) 1998-07-29 2001-06-05 Sumitomo Special Metals Co., Ltd. Method for manufacturing conductive wafers, method for manufacturing thin-plate sintered compacts, method for manufacturing ceramic substrates for thin-film magnetic head, and method for machining conductive wafers

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH09193137A (en) * 1996-01-16 1997-07-29 Cree Res Inc Production of silicon carbide wafer and wafer of 4h silicon carbide
US6242709B1 (en) 1998-07-29 2001-06-05 Sumitomo Special Metals Co., Ltd. Method for manufacturing conductive wafers, method for manufacturing thin-plate sintered compacts, method for manufacturing ceramic substrates for thin-film magnetic head, and method for machining conductive wafers
CN1101738C (en) * 1998-07-29 2003-02-19 住友特殊金属株式会社 Production of sintered conductive thin-sheet and thin-plate and ceramic substrate and processing method thereof

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