JPS5242367A - Method of preventing occurence of crystal defects of silicon wafers - Google Patents
Method of preventing occurence of crystal defects of silicon wafersInfo
- Publication number
- JPS5242367A JPS5242367A JP50118144A JP11814475A JPS5242367A JP S5242367 A JPS5242367 A JP S5242367A JP 50118144 A JP50118144 A JP 50118144A JP 11814475 A JP11814475 A JP 11814475A JP S5242367 A JPS5242367 A JP S5242367A
- Authority
- JP
- Japan
- Prior art keywords
- crystal defects
- silicon wafers
- occurence
- preventing
- preventing occurence
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
PURPOSE: To prevent occurence of crystal defects by heat treatment after causing strain to be produced in the rear of wafers.
COPYRIGHT: (C)1977,JPO&Japio
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP50118144A JPS5242367A (en) | 1975-09-30 | 1975-09-30 | Method of preventing occurence of crystal defects of silicon wafers |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP50118144A JPS5242367A (en) | 1975-09-30 | 1975-09-30 | Method of preventing occurence of crystal defects of silicon wafers |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5242367A true JPS5242367A (en) | 1977-04-01 |
Family
ID=14729151
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP50118144A Pending JPS5242367A (en) | 1975-09-30 | 1975-09-30 | Method of preventing occurence of crystal defects of silicon wafers |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5242367A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS54110783A (en) * | 1978-02-20 | 1979-08-30 | Hitachi Ltd | Semiconductor substrate and its manufacture |
| JPH0664463U (en) * | 1993-02-23 | 1994-09-13 | 和彦 湯川 | Electric reel fishing tackle |
-
1975
- 1975-09-30 JP JP50118144A patent/JPS5242367A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS54110783A (en) * | 1978-02-20 | 1979-08-30 | Hitachi Ltd | Semiconductor substrate and its manufacture |
| JPH0664463U (en) * | 1993-02-23 | 1994-09-13 | 和彦 湯川 | Electric reel fishing tackle |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JPS5248979A (en) | Process for production of complementary type mos integrated circuit de vice | |
| JPS51134071A (en) | Method to eliminate crystal defects of silicon | |
| JPS5247676A (en) | Process for production of semiconductor device | |
| JPS5221782A (en) | Producing system and unit of semiconductor | |
| JPS51140199A (en) | Crystal working process | |
| JPS5228879A (en) | Semiconductor device and method for its production | |
| JPS5242366A (en) | Method of preventing occurence of crystal defects of silicon wafers | |
| JPS5245868A (en) | Process for production of plate-from silicone | |
| JPS5233143A (en) | Compressive molten bath method by industive heat way | |
| JPS5330905A (en) | Suppressing method for generation of adhered solid matter in rotary kiln | |
| JPS525700A (en) | The process for production of silicon nitride | |
| JPS52129275A (en) | Impurity diffusion method | |
| JPS51111478A (en) | A method of producing semiconductor crystal | |
| JPS5261956A (en) | Production of semiconductor device | |
| JPS5228274A (en) | Containing method of wafer to magazine | |
| JPS5387164A (en) | Heat traetment method of compound crystal | |
| JPS51140198A (en) | Crystal working process | |
| JPS5237375A (en) | Device for aranging moving intervals of articles to be carried | |
| JPS53128986A (en) | Manufacture of semiconductor device | |
| JPS544069A (en) | Producing method of oxide film | |
| JPS51132762A (en) | Heat-treatment method of semiconductor device | |
| JPS5225578A (en) | Semiconductor device | |
| JPS51136645A (en) | Process for preparing alpha-alkyl-alpha-phenylacetic acids. | |
| JPS5277584A (en) | Growing crystal | |
| JPS5270772A (en) | Semiconductor rectifier |