JPS51140559A - Impurities diffusing to iii-v group compound semi-conductor base plate - Google Patents
Impurities diffusing to iii-v group compound semi-conductor base plateInfo
- Publication number
- JPS51140559A JPS51140559A JP6431575A JP6431575A JPS51140559A JP S51140559 A JPS51140559 A JP S51140559A JP 6431575 A JP6431575 A JP 6431575A JP 6431575 A JP6431575 A JP 6431575A JP S51140559 A JPS51140559 A JP S51140559A
- Authority
- JP
- Japan
- Prior art keywords
- iii
- base plate
- group compound
- conductor base
- compound semi
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Led Devices (AREA)
Abstract
PURPOSE: To provide a method of obtaining low density of diffusion range by forming low density of phosphorous-glass layer in the diffusion range of III-V group compound semi-conductor base plate containing phosphorous, then diffusing impurities.
COPYRIGHT: (C)1976,JPO&Japio
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6431575A JPS51140559A (en) | 1975-05-30 | 1975-05-30 | Impurities diffusing to iii-v group compound semi-conductor base plate |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6431575A JPS51140559A (en) | 1975-05-30 | 1975-05-30 | Impurities diffusing to iii-v group compound semi-conductor base plate |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS51140559A true JPS51140559A (en) | 1976-12-03 |
Family
ID=13254668
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP6431575A Pending JPS51140559A (en) | 1975-05-30 | 1975-05-30 | Impurities diffusing to iii-v group compound semi-conductor base plate |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS51140559A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61274321A (en) * | 1985-05-29 | 1986-12-04 | Sanken Electric Co Ltd | Method for diffusing impurity into compound semiconductor |
| JPH06232062A (en) * | 1993-01-28 | 1994-08-19 | Sanken Electric Co Ltd | Method for diffusing zinc in compound semiconductor |
-
1975
- 1975-05-30 JP JP6431575A patent/JPS51140559A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61274321A (en) * | 1985-05-29 | 1986-12-04 | Sanken Electric Co Ltd | Method for diffusing impurity into compound semiconductor |
| JPH06232062A (en) * | 1993-01-28 | 1994-08-19 | Sanken Electric Co Ltd | Method for diffusing zinc in compound semiconductor |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JPS51147981A (en) | Method of manufacturing semiconductor device | |
| JPS5293279A (en) | Forming method for silicon gate electrode | |
| JPS5228879A (en) | Semiconductor device and method for its production | |
| JPS51123558A (en) | Manufacturing method of plate semiconductor | |
| JPS5378780A (en) | Preparation for semiconductor device | |
| JPS52127752A (en) | Pduction of semiconductor unit | |
| JPS53123673A (en) | Manufacture of semiconductor device | |
| JPS5265664A (en) | Selective introduction of impurity in compound semiconductor substrate | |
| JPS5267271A (en) | Formation of through-hole onto semiconductor substrate | |
| JPS5311574A (en) | Production of semiconductor device | |
| JPS5318954A (en) | Diffusing process of impurity | |
| JPS5329662A (en) | Production of semiconductor device | |
| JPS5314585A (en) | Semiconductor device | |
| JPS52179A (en) | Method of fabricating semiconductor | |
| JPS5395570A (en) | Forming method of epitaxial layer | |
| JPS51134565A (en) | Schottky barrier diode manufacturing process | |
| JPS5361980A (en) | Production of semiconductor device | |
| JPS5231690A (en) | Productin method of semiconductor device | |
| JPS53128978A (en) | Impurity diffusion method | |
| JPS5418670A (en) | Manufacture of semiconductor device | |
| JPS5267959A (en) | Manufacture of semiconductor element | |
| JPS5275977A (en) | Production of compound semiconductor device | |
| JPS5428566A (en) | Manufacture of semiconductor device | |
| JPS5211788A (en) | Method of manufacturing p-n junction type solar battery | |
| JPS5245884A (en) | Process for production of semiconductor device |