JPS5378780A - Preparation for semiconductor device - Google Patents

Preparation for semiconductor device

Info

Publication number
JPS5378780A
JPS5378780A JP15427176A JP15427176A JPS5378780A JP S5378780 A JPS5378780 A JP S5378780A JP 15427176 A JP15427176 A JP 15427176A JP 15427176 A JP15427176 A JP 15427176A JP S5378780 A JPS5378780 A JP S5378780A
Authority
JP
Japan
Prior art keywords
preparation
semiconductor device
good
base layer
high density
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP15427176A
Other languages
Japanese (ja)
Inventor
Takeshi Kuramoto
Yukinobu Miwa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP15427176A priority Critical patent/JPS5378780A/en
Publication of JPS5378780A publication Critical patent/JPS5378780A/en
Pending legal-status Critical Current

Links

Landscapes

  • Bipolar Transistors (AREA)

Abstract

PURPOSE: To simultaneously form the base layer including high density zone by the ion impregnation method whose controllability is good, in case of shallow impurity diffusion.
COPYRIGHT: (C)1978,JPO&Japio
JP15427176A 1976-12-23 1976-12-23 Preparation for semiconductor device Pending JPS5378780A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15427176A JPS5378780A (en) 1976-12-23 1976-12-23 Preparation for semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15427176A JPS5378780A (en) 1976-12-23 1976-12-23 Preparation for semiconductor device

Publications (1)

Publication Number Publication Date
JPS5378780A true JPS5378780A (en) 1978-07-12

Family

ID=15580508

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15427176A Pending JPS5378780A (en) 1976-12-23 1976-12-23 Preparation for semiconductor device

Country Status (1)

Country Link
JP (1) JPS5378780A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59155961A (en) * 1983-02-25 1984-09-05 Rohm Co Ltd Manufacturing method of semiconductor device
JPH05275439A (en) * 1992-01-31 1993-10-22 Internatl Business Mach Corp <Ibm> External base resistance and low noise bipolar transistor

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59155961A (en) * 1983-02-25 1984-09-05 Rohm Co Ltd Manufacturing method of semiconductor device
JPH05275439A (en) * 1992-01-31 1993-10-22 Internatl Business Mach Corp <Ibm> External base resistance and low noise bipolar transistor

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