JPS51145268A - Epitaxial semiconductor device - Google Patents

Epitaxial semiconductor device

Info

Publication number
JPS51145268A
JPS51145268A JP50070648A JP7064875A JPS51145268A JP S51145268 A JPS51145268 A JP S51145268A JP 50070648 A JP50070648 A JP 50070648A JP 7064875 A JP7064875 A JP 7064875A JP S51145268 A JPS51145268 A JP S51145268A
Authority
JP
Japan
Prior art keywords
semiconductor device
epitaxial semiconductor
substraight
lessened
dopant
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP50070648A
Other languages
Japanese (ja)
Inventor
Kenji Hirakawa
Toshio Tanaka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Home Electronics Ltd
NEC Corp
Original Assignee
NEC Home Electronics Ltd
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Home Electronics Ltd, Nippon Electric Co Ltd filed Critical NEC Home Electronics Ltd
Priority to JP50070648A priority Critical patent/JPS51145268A/en
Publication of JPS51145268A publication Critical patent/JPS51145268A/en
Pending legal-status Critical Current

Links

Landscapes

  • Chemical Vapour Deposition (AREA)
  • Bipolar Transistors (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

PURPOSE: Using substraight lessened local partiality of impurity (dopant) for eptaxial growth results in high yield rate of device.
COPYRIGHT: (C)1976,JPO&Japio
JP50070648A 1975-06-10 1975-06-10 Epitaxial semiconductor device Pending JPS51145268A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP50070648A JPS51145268A (en) 1975-06-10 1975-06-10 Epitaxial semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP50070648A JPS51145268A (en) 1975-06-10 1975-06-10 Epitaxial semiconductor device

Publications (1)

Publication Number Publication Date
JPS51145268A true JPS51145268A (en) 1976-12-14

Family

ID=13437668

Family Applications (1)

Application Number Title Priority Date Filing Date
JP50070648A Pending JPS51145268A (en) 1975-06-10 1975-06-10 Epitaxial semiconductor device

Country Status (1)

Country Link
JP (1) JPS51145268A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61174197A (en) * 1985-01-25 1986-08-05 Toshiba Ceramics Co Ltd Production of epitaxial wafer

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4832467A (en) * 1971-08-27 1973-04-28

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4832467A (en) * 1971-08-27 1973-04-28

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61174197A (en) * 1985-01-25 1986-08-05 Toshiba Ceramics Co Ltd Production of epitaxial wafer

Similar Documents

Publication Publication Date Title
JPS52140280A (en) Semiconductor device
JPS5395571A (en) Semiconductor device
JPS51145268A (en) Epitaxial semiconductor device
JPS5441665A (en) Manufacture for semiconductor device
JPS525273A (en) Transistor
JPS524175A (en) Groups iii-v compounds semiconductor device
JPS5423467A (en) Singlecrystal growing method for binary semiconductor
JPS5384457A (en) Liquid-phase epitaxial growth method
JPS5272580A (en) Production of semiconductor device
JPS5326663A (en) Manu facture of semiconductor device
JPS5242365A (en) Tool for semiconductors
JPS5244576A (en) Process for production of semiconductor device
JPS5211860A (en) Liquid phase epitaxial device
JPS5214390A (en) Iii-v compound semiconductor device and its process for fabrication
JPS5270761A (en) Semiconductor device
JPS5234667A (en) Semiconductor device
JPS51118386A (en) Semiconductor unit
JPS51126049A (en) Compounded semi-conductor gaseous phase epitaxial growth method
JPS528769A (en) Semiconductor device
JPS5345171A (en) Molecular beam epitaxial growth method
JPS5424575A (en) Handling method of wafer
JPS51130168A (en) Semiconductor device process
JPS5224475A (en) Planar thyristor process
JPS527673A (en) Method of forming pn junction
JPS53123069A (en) Doping method of impurities to group iii-v compound semiconductors