JPS51147184A - Method of mawufacturing of mosic circuit device - Google Patents

Method of mawufacturing of mosic circuit device

Info

Publication number
JPS51147184A
JPS51147184A JP7063275A JP7063275A JPS51147184A JP S51147184 A JPS51147184 A JP S51147184A JP 7063275 A JP7063275 A JP 7063275A JP 7063275 A JP7063275 A JP 7063275A JP S51147184 A JPS51147184 A JP S51147184A
Authority
JP
Japan
Prior art keywords
mosic
mawufacturing
circuit device
voltage
threshold value
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP7063275A
Other languages
Japanese (ja)
Inventor
Yoshihiko Okamoto
Kazuo Oizumi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP7063275A priority Critical patent/JPS51147184A/en
Publication of JPS51147184A publication Critical patent/JPS51147184A/en
Pending legal-status Critical Current

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Abstract

PURPOSE: To change a threshold value of voltage in predetermined MOST on the same substrate of MOSIC by means of simple manufacturing process.
COPYRIGHT: (C)1976,JPO&Japio
JP7063275A 1975-06-11 1975-06-11 Method of mawufacturing of mosic circuit device Pending JPS51147184A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7063275A JPS51147184A (en) 1975-06-11 1975-06-11 Method of mawufacturing of mosic circuit device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7063275A JPS51147184A (en) 1975-06-11 1975-06-11 Method of mawufacturing of mosic circuit device

Publications (1)

Publication Number Publication Date
JPS51147184A true JPS51147184A (en) 1976-12-17

Family

ID=13437197

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7063275A Pending JPS51147184A (en) 1975-06-11 1975-06-11 Method of mawufacturing of mosic circuit device

Country Status (1)

Country Link
JP (1) JPS51147184A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5333074A (en) * 1976-09-08 1978-03-28 Sanyo Electric Co Ltd Production of complementary type insulated gate field effect semiconductor device
JPS6418263A (en) * 1987-07-14 1989-01-23 Sanyo Electric Co Manufacture of depletion mode metal-oxide semiconductor device
JPH04264753A (en) * 1991-02-19 1992-09-21 Nec Corp Manufacture of semiconductor device

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4929792A (en) * 1972-07-18 1974-03-16
JPS5066181A (en) * 1973-10-12 1975-06-04

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4929792A (en) * 1972-07-18 1974-03-16
JPS5066181A (en) * 1973-10-12 1975-06-04

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5333074A (en) * 1976-09-08 1978-03-28 Sanyo Electric Co Ltd Production of complementary type insulated gate field effect semiconductor device
JPS6418263A (en) * 1987-07-14 1989-01-23 Sanyo Electric Co Manufacture of depletion mode metal-oxide semiconductor device
JPH04264753A (en) * 1991-02-19 1992-09-21 Nec Corp Manufacture of semiconductor device

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