JPS52100876A - Field effect transistor of insulation gate type - Google Patents

Field effect transistor of insulation gate type

Info

Publication number
JPS52100876A
JPS52100876A JP1729776A JP1729776A JPS52100876A JP S52100876 A JPS52100876 A JP S52100876A JP 1729776 A JP1729776 A JP 1729776A JP 1729776 A JP1729776 A JP 1729776A JP S52100876 A JPS52100876 A JP S52100876A
Authority
JP
Japan
Prior art keywords
gate type
field effect
effect transistor
insulation gate
insulation
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP1729776A
Other languages
Japanese (ja)
Inventor
Takashi Asaoka
Hisanori Yoshimura
Nobuaki Ieda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NTT Inc
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP1729776A priority Critical patent/JPS52100876A/en
Publication of JPS52100876A publication Critical patent/JPS52100876A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/351—Substrate regions of field-effect devices
    • H10D62/357—Substrate regions of field-effect devices of FETs
    • H10D62/364—Substrate regions of field-effect devices of FETs of IGFETs

Landscapes

  • Semiconductor Memories (AREA)

Abstract

PURPOSE:To fabricate small sized FET having general constitution of that of insulation gate type and sufficient function as an element for memory.
JP1729776A 1976-02-19 1976-02-19 Field effect transistor of insulation gate type Pending JPS52100876A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1729776A JPS52100876A (en) 1976-02-19 1976-02-19 Field effect transistor of insulation gate type

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1729776A JPS52100876A (en) 1976-02-19 1976-02-19 Field effect transistor of insulation gate type

Publications (1)

Publication Number Publication Date
JPS52100876A true JPS52100876A (en) 1977-08-24

Family

ID=11940052

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1729776A Pending JPS52100876A (en) 1976-02-19 1976-02-19 Field effect transistor of insulation gate type

Country Status (1)

Country Link
JP (1) JPS52100876A (en)

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4854876A (en) * 1971-11-09 1973-08-01
US3852800A (en) * 1971-08-02 1974-12-03 Texas Instruments Inc One transistor dynamic memory cell

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3852800A (en) * 1971-08-02 1974-12-03 Texas Instruments Inc One transistor dynamic memory cell
JPS4854876A (en) * 1971-11-09 1973-08-01

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