JPS5357777A - Semiconductor memory device - Google Patents

Semiconductor memory device

Info

Publication number
JPS5357777A
JPS5357777A JP13170876A JP13170876A JPS5357777A JP S5357777 A JPS5357777 A JP S5357777A JP 13170876 A JP13170876 A JP 13170876A JP 13170876 A JP13170876 A JP 13170876A JP S5357777 A JPS5357777 A JP S5357777A
Authority
JP
Japan
Prior art keywords
memory device
semiconductor memory
igfet
cannel
drain
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP13170876A
Other languages
Japanese (ja)
Inventor
Shinya Oba
Toshiaki Masuhara
Ryoichi Hori
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP13170876A priority Critical patent/JPS5357777A/en
Publication of JPS5357777A publication Critical patent/JPS5357777A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices

Landscapes

  • Semiconductor Memories (AREA)

Abstract

PURPOSE:To detect output signals and achieve the improvement in the performance of a memory element by constituting a p-channel IGFET in the drain of an n- cannel IGFET.
JP13170876A 1976-11-04 1976-11-04 Semiconductor memory device Pending JPS5357777A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP13170876A JPS5357777A (en) 1976-11-04 1976-11-04 Semiconductor memory device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13170876A JPS5357777A (en) 1976-11-04 1976-11-04 Semiconductor memory device

Publications (1)

Publication Number Publication Date
JPS5357777A true JPS5357777A (en) 1978-05-25

Family

ID=15064332

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13170876A Pending JPS5357777A (en) 1976-11-04 1976-11-04 Semiconductor memory device

Country Status (1)

Country Link
JP (1) JPS5357777A (en)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5470739A (en) * 1977-11-17 1979-06-06 Fujitsu Ltd Semiconductor memory unit
JPS57201064A (en) * 1981-06-04 1982-12-09 Nec Corp Semiconductor memory cell
JPS5893371A (en) * 1981-11-30 1983-06-03 Nec Corp Mos device
JPS59212472A (en) * 1983-05-16 1984-12-01 Sumitomo Chem Co Ltd 4,5,6,7-tetrahydro-2h-isoindole-1,3-dione derivative, its production and herbicide containing the same as active constituent
JPS6235559A (en) * 1985-08-09 1987-02-16 Agency Of Ind Science & Technol Semiconductor memory
JPS6341066A (en) * 1986-08-06 1988-02-22 Mitsubishi Electric Corp Mos type semiconductor memory
US8030827B2 (en) 2008-02-06 2011-10-04 Nihon Dempa Kogyo Co., Ltd. Crystal unit

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5470739A (en) * 1977-11-17 1979-06-06 Fujitsu Ltd Semiconductor memory unit
JPS57201064A (en) * 1981-06-04 1982-12-09 Nec Corp Semiconductor memory cell
JPS5893371A (en) * 1981-11-30 1983-06-03 Nec Corp Mos device
JPS59212472A (en) * 1983-05-16 1984-12-01 Sumitomo Chem Co Ltd 4,5,6,7-tetrahydro-2h-isoindole-1,3-dione derivative, its production and herbicide containing the same as active constituent
JPS6235559A (en) * 1985-08-09 1987-02-16 Agency Of Ind Science & Technol Semiconductor memory
JPS6341066A (en) * 1986-08-06 1988-02-22 Mitsubishi Electric Corp Mos type semiconductor memory
US8030827B2 (en) 2008-02-06 2011-10-04 Nihon Dempa Kogyo Co., Ltd. Crystal unit

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