JPS52104875A - High voltage semiconductor rectifier device - Google Patents

High voltage semiconductor rectifier device

Info

Publication number
JPS52104875A
JPS52104875A JP2108376A JP2108376A JPS52104875A JP S52104875 A JPS52104875 A JP S52104875A JP 2108376 A JP2108376 A JP 2108376A JP 2108376 A JP2108376 A JP 2108376A JP S52104875 A JPS52104875 A JP S52104875A
Authority
JP
Japan
Prior art keywords
high voltage
voltage semiconductor
rectifier device
semiconductor rectifier
insulating
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2108376A
Other languages
Japanese (ja)
Inventor
Akira Matsunaga
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP2108376A priority Critical patent/JPS52104875A/en
Publication of JPS52104875A publication Critical patent/JPS52104875A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M7/00—Conversion of AC power input into DC power output; Conversion of DC power input into AC power output
    • H02M7/003—Constructional details, e.g. physical layout, assembly, wiring or busbar connections

Landscapes

  • Formation Of Insulating Films (AREA)

Abstract

PURPOSE: To attain protection by insulating through a glass film formed on a restricted region of a semiconductor substrate and to improve reliability of the device.
COPYRIGHT: (C)1977,JPO&Japio
JP2108376A 1976-03-01 1976-03-01 High voltage semiconductor rectifier device Pending JPS52104875A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2108376A JPS52104875A (en) 1976-03-01 1976-03-01 High voltage semiconductor rectifier device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2108376A JPS52104875A (en) 1976-03-01 1976-03-01 High voltage semiconductor rectifier device

Publications (1)

Publication Number Publication Date
JPS52104875A true JPS52104875A (en) 1977-09-02

Family

ID=12044980

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2108376A Pending JPS52104875A (en) 1976-03-01 1976-03-01 High voltage semiconductor rectifier device

Country Status (1)

Country Link
JP (1) JPS52104875A (en)

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