JPS51114069A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPS51114069A JPS51114069A JP50038881A JP3888175A JPS51114069A JP S51114069 A JPS51114069 A JP S51114069A JP 50038881 A JP50038881 A JP 50038881A JP 3888175 A JP3888175 A JP 3888175A JP S51114069 A JPS51114069 A JP S51114069A
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor device
- semiconductor region
- electrode
- depleticon
- disruption
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Electrodes Of Semiconductors (AREA)
- Bipolar Transistors (AREA)
- Thyristors (AREA)
Abstract
PURPOSE: Forming a depleticon layer under electrode by having the fourth semiconductor region corresponding to conductor 2 occur under the electrode extending over the first semiconductor region, and thereby achieving an effective countermeasure against insulation disruption.
COPYRIGHT: (C)1976,JPO&Japio
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP50038881A JPS51114069A (en) | 1975-03-31 | 1975-03-31 | Semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP50038881A JPS51114069A (en) | 1975-03-31 | 1975-03-31 | Semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS51114069A true JPS51114069A (en) | 1976-10-07 |
Family
ID=12537543
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP50038881A Pending JPS51114069A (en) | 1975-03-31 | 1975-03-31 | Semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS51114069A (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5685859A (en) * | 1979-12-14 | 1981-07-13 | Fujitsu Ltd | High withstand voltage planar transistor |
| JPS61159762A (en) * | 1984-12-31 | 1986-07-19 | Sanken Electric Co Ltd | Semiconductor device |
| JPS61292962A (en) * | 1985-06-21 | 1986-12-23 | Hitachi Ltd | Semiconductor device |
| JPS63220572A (en) * | 1987-03-09 | 1988-09-13 | Nec Corp | transistor |
| JPS63244773A (en) * | 1987-03-31 | 1988-10-12 | Toshiba Corp | Semiconductor device |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4931288A (en) * | 1972-07-21 | 1974-03-20 | ||
| JPS5010106A (en) * | 1973-05-24 | 1975-02-01 |
-
1975
- 1975-03-31 JP JP50038881A patent/JPS51114069A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4931288A (en) * | 1972-07-21 | 1974-03-20 | ||
| JPS5010106A (en) * | 1973-05-24 | 1975-02-01 |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5685859A (en) * | 1979-12-14 | 1981-07-13 | Fujitsu Ltd | High withstand voltage planar transistor |
| JPS61159762A (en) * | 1984-12-31 | 1986-07-19 | Sanken Electric Co Ltd | Semiconductor device |
| JPS61292962A (en) * | 1985-06-21 | 1986-12-23 | Hitachi Ltd | Semiconductor device |
| JPS63220572A (en) * | 1987-03-09 | 1988-09-13 | Nec Corp | transistor |
| JPS63244773A (en) * | 1987-03-31 | 1988-10-12 | Toshiba Corp | Semiconductor device |
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