JPS52143754A - Annealing method of compound semiconductor single crystal - Google Patents

Annealing method of compound semiconductor single crystal

Info

Publication number
JPS52143754A
JPS52143754A JP6017676A JP6017676A JPS52143754A JP S52143754 A JPS52143754 A JP S52143754A JP 6017676 A JP6017676 A JP 6017676A JP 6017676 A JP6017676 A JP 6017676A JP S52143754 A JPS52143754 A JP S52143754A
Authority
JP
Japan
Prior art keywords
compound semiconductor
annealing method
single crystal
semiconductor single
gap
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP6017676A
Other languages
Japanese (ja)
Other versions
JPS5931855B2 (en
Inventor
Masayuki Watanabe
Satao Yashiro
Keijiro Hirahara
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP6017676A priority Critical patent/JPS5931855B2/en
Publication of JPS52143754A publication Critical patent/JPS52143754A/en
Publication of JPS5931855B2 publication Critical patent/JPS5931855B2/en
Expired legal-status Critical Current

Links

Landscapes

  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)

Abstract

PURPOSE: To achieve the improvement in electrical performance of elements by obtaining a simple annealing method capable of eliminating the internal strain of the GaP crystal of compound semiconductor crystal within a short time without decomposing the ingot of GaP.
COPYRIGHT: (C)1977,JPO&Japio
JP6017676A 1976-05-26 1976-05-26 Annealing method for compound semiconductor single crystal Expired JPS5931855B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP6017676A JPS5931855B2 (en) 1976-05-26 1976-05-26 Annealing method for compound semiconductor single crystal

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6017676A JPS5931855B2 (en) 1976-05-26 1976-05-26 Annealing method for compound semiconductor single crystal

Publications (2)

Publication Number Publication Date
JPS52143754A true JPS52143754A (en) 1977-11-30
JPS5931855B2 JPS5931855B2 (en) 1984-08-04

Family

ID=13134572

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6017676A Expired JPS5931855B2 (en) 1976-05-26 1976-05-26 Annealing method for compound semiconductor single crystal

Country Status (1)

Country Link
JP (1) JPS5931855B2 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06196430A (en) * 1992-12-22 1994-07-15 Showa Denko Kk Annealing method for inp single crystal

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06196430A (en) * 1992-12-22 1994-07-15 Showa Denko Kk Annealing method for inp single crystal

Also Published As

Publication number Publication date
JPS5931855B2 (en) 1984-08-04

Similar Documents

Publication Publication Date Title
JPS53124087A (en) Manufacture of semiconductor device
JPS5333053A (en) Production of semiconductor device
JPS5211525A (en) Method of manufacturing headrests
JPS53111283A (en) Compound semiconductor device and production of the same
JPS52143761A (en) Crystal growth method
JPS5345177A (en) Production of semiconductor device
JPS5274280A (en) Semiconductor device and its production
JPS53142877A (en) Manufacture for compound semiconductor device
JPS5252370A (en) Fabrication of glass-sealed semiconductor device
JPS51111478A (en) A method of producing semiconductor crystal
JPS5354493A (en) Electronic watch
JPS5267268A (en) Formation of oxidization film
JPS5314585A (en) Semiconductor device
JPS5320782A (en) Hall element
JPS5343151A (en) Handling and operation method of runner vane
JPS5410688A (en) Production of semiconductor device
JPS5388579A (en) Production of semiconductor device
JPS5348669A (en) Growth method of semiconductor crystal
JPS5379374A (en) Impurity diffusion method to compound semiconductor
JPS53123075A (en) Group iii-v compound semiconductor device
JPS51143811A (en) Step motor for electronic watches
JPS5211761A (en) Method of cutting semiconductor wafers
JPS51141583A (en) Method for producing an electrode for use semiconductor units
JPS5422157A (en) Formation method of selective impurity diffusion region into iii-v group compound semiconductor
JPS5261956A (en) Production of semiconductor device