JPS5422157A - Formation method of selective impurity diffusion region into iii-v group compound semiconductor - Google Patents

Formation method of selective impurity diffusion region into iii-v group compound semiconductor

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Publication number
JPS5422157A
JPS5422157A JP8715177A JP8715177A JPS5422157A JP S5422157 A JPS5422157 A JP S5422157A JP 8715177 A JP8715177 A JP 8715177A JP 8715177 A JP8715177 A JP 8715177A JP S5422157 A JPS5422157 A JP S5422157A
Authority
JP
Japan
Prior art keywords
iii
compound semiconductor
group compound
diffusion region
formation method
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP8715177A
Other languages
Japanese (ja)
Other versions
JPS5918855B2 (en
Inventor
Hideho Saito
Ganzo Iwane
Koichi Wakita
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NTT Inc
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP52087151A priority Critical patent/JPS5918855B2/en
Publication of JPS5422157A publication Critical patent/JPS5422157A/en
Publication of JPS5918855B2 publication Critical patent/JPS5918855B2/en
Expired legal-status Critical Current

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Abstract

PURPOSE: To secure a selective diffusion of the impurity onto the III-V group compound semiconductor via the Al mask.
COPYRIGHT: (C)1979,JPO&Japio
JP52087151A 1977-07-20 1977-07-20 3-Method for forming selective impurity diffusion regions in V group compound semiconductors Expired JPS5918855B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP52087151A JPS5918855B2 (en) 1977-07-20 1977-07-20 3-Method for forming selective impurity diffusion regions in V group compound semiconductors

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP52087151A JPS5918855B2 (en) 1977-07-20 1977-07-20 3-Method for forming selective impurity diffusion regions in V group compound semiconductors

Publications (2)

Publication Number Publication Date
JPS5422157A true JPS5422157A (en) 1979-02-19
JPS5918855B2 JPS5918855B2 (en) 1984-05-01

Family

ID=13906969

Family Applications (1)

Application Number Title Priority Date Filing Date
JP52087151A Expired JPS5918855B2 (en) 1977-07-20 1977-07-20 3-Method for forming selective impurity diffusion regions in V group compound semiconductors

Country Status (1)

Country Link
JP (1) JPS5918855B2 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4868633A (en) * 1986-10-22 1989-09-19 Texas Instruments Incorporated Selective epitaxy devices and method

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4868633A (en) * 1986-10-22 1989-09-19 Texas Instruments Incorporated Selective epitaxy devices and method

Also Published As

Publication number Publication date
JPS5918855B2 (en) 1984-05-01

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