JPS52155187A - Liquid phase growth of semiconductor crystal - Google Patents

Liquid phase growth of semiconductor crystal

Info

Publication number
JPS52155187A
JPS52155187A JP7254976A JP7254976A JPS52155187A JP S52155187 A JPS52155187 A JP S52155187A JP 7254976 A JP7254976 A JP 7254976A JP 7254976 A JP7254976 A JP 7254976A JP S52155187 A JPS52155187 A JP S52155187A
Authority
JP
Japan
Prior art keywords
melt
semiconductor crystal
liquid phase
phase growth
crystal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP7254976A
Other languages
Japanese (ja)
Inventor
Shoichi Kakimoto
Toshio Sogo
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP7254976A priority Critical patent/JPS52155187A/en
Publication of JPS52155187A publication Critical patent/JPS52155187A/en
Pending legal-status Critical Current

Links

Landscapes

  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

PURPOSE: To change continually the conposition or impurity concentration of grown crystal layer by mixing the first melt with the second melt of composition different from the first melt in the liquid growth of semiconductor crystal which is carried out by bringing the first melt into contact with a base crystal plate, then by cooling the melt.
COPYRIGHT: (C)1977,JPO&Japio
JP7254976A 1976-06-18 1976-06-18 Liquid phase growth of semiconductor crystal Pending JPS52155187A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7254976A JPS52155187A (en) 1976-06-18 1976-06-18 Liquid phase growth of semiconductor crystal

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7254976A JPS52155187A (en) 1976-06-18 1976-06-18 Liquid phase growth of semiconductor crystal

Publications (1)

Publication Number Publication Date
JPS52155187A true JPS52155187A (en) 1977-12-23

Family

ID=13492542

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7254976A Pending JPS52155187A (en) 1976-06-18 1976-06-18 Liquid phase growth of semiconductor crystal

Country Status (1)

Country Link
JP (1) JPS52155187A (en)

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4890190A (en) * 1972-02-09 1973-11-24
JPS50350A (en) * 1973-05-07 1975-01-06
JPS5125075A (en) * 1974-08-27 1976-03-01 Sharp Kk Handotaisochi no seizosochi oyobi seizohoho
JPS51107766A (en) * 1975-03-19 1976-09-24 Fujitsu Ltd Ekisoseichoho oyobi sochi

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4890190A (en) * 1972-02-09 1973-11-24
JPS50350A (en) * 1973-05-07 1975-01-06
JPS5125075A (en) * 1974-08-27 1976-03-01 Sharp Kk Handotaisochi no seizosochi oyobi seizohoho
JPS51107766A (en) * 1975-03-19 1976-09-24 Fujitsu Ltd Ekisoseichoho oyobi sochi

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