JPS53105372A - Liquid phase epitaxial growing unit - Google Patents

Liquid phase epitaxial growing unit

Info

Publication number
JPS53105372A
JPS53105372A JP1988477A JP1988477A JPS53105372A JP S53105372 A JPS53105372 A JP S53105372A JP 1988477 A JP1988477 A JP 1988477A JP 1988477 A JP1988477 A JP 1988477A JP S53105372 A JPS53105372 A JP S53105372A
Authority
JP
Japan
Prior art keywords
liquid phase
phase epitaxial
growing unit
epitaxial growing
grow
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP1988477A
Other languages
Japanese (ja)
Other versions
JPS5937855B2 (en
Inventor
Kazuo Nakajima
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP1988477A priority Critical patent/JPS5937855B2/en
Publication of JPS53105372A publication Critical patent/JPS53105372A/en
Publication of JPS5937855B2 publication Critical patent/JPS5937855B2/en
Expired legal-status Critical Current

Links

Landscapes

  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)

Abstract

PURPOSE: To grow the crystal having less crystal deficiency by protecting the bottom of solution with the source substrate and to grow with a given composition by preventing the mixing of solutions.
COPYRIGHT: (C)1978,JPO&Japio
JP1988477A 1977-02-25 1977-02-25 Liquid phase epitaxial growth equipment Expired JPS5937855B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1988477A JPS5937855B2 (en) 1977-02-25 1977-02-25 Liquid phase epitaxial growth equipment

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1988477A JPS5937855B2 (en) 1977-02-25 1977-02-25 Liquid phase epitaxial growth equipment

Publications (2)

Publication Number Publication Date
JPS53105372A true JPS53105372A (en) 1978-09-13
JPS5937855B2 JPS5937855B2 (en) 1984-09-12

Family

ID=12011623

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1988477A Expired JPS5937855B2 (en) 1977-02-25 1977-02-25 Liquid phase epitaxial growth equipment

Country Status (1)

Country Link
JP (1) JPS5937855B2 (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5747798A (en) * 1980-09-01 1982-03-18 Sanyo Electric Co Ltd Liquid phase epitaxial growing method
JPS57118100A (en) * 1981-01-06 1982-07-22 Toshiba Corp Liquid phase epitaxial growing apparatus for crystal

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63118041U (en) * 1987-01-23 1988-07-30

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5747798A (en) * 1980-09-01 1982-03-18 Sanyo Electric Co Ltd Liquid phase epitaxial growing method
JPS57118100A (en) * 1981-01-06 1982-07-22 Toshiba Corp Liquid phase epitaxial growing apparatus for crystal

Also Published As

Publication number Publication date
JPS5937855B2 (en) 1984-09-12

Similar Documents

Publication Publication Date Title
JPS53105372A (en) Liquid phase epitaxial growing unit
JPS5344489A (en) Nematic liquid crystal composition
JPS52106384A (en) Nematic liquid crystal composition
JPS52122286A (en) Nematic liquid crystal composition
JPS53139970A (en) Liquid phase epitaxial growth method of gaas crystal
JPS52135264A (en) Liquid phase epitaxial growth method
JPS5228258A (en) Method for growth of crystals from liquid phase
JPS5411698A (en) Liquid crystal panel
JPS52107286A (en) Nematic liquid crystal composition
JPS51114064A (en) Liquid phase growth and concerned unit
JPS52155188A (en) Liquid phase growth of semiconductor crystal
JPS51143581A (en) Process for liquid phase growing
JPS52155189A (en) Multiple layer crystal growth
JPS51123781A (en) A liquid phase crystal growth apparatus
JPS52156186A (en) Nematic liquid crystal composition
JPS52155187A (en) Liquid phase growth of semiconductor crystal
JPS52113386A (en) Stabilized liquid crystal composition
JPS5421976A (en) Liquid crystal material
JPS5388569A (en) Liquid phase epitaxial growth apparatus
JPS52156187A (en) Nematic liquid crystal composition
JPS52109385A (en) Liquid crystal display unit
JPS522883A (en) Liquid crystal composition
JPS5267571A (en) Crystallization method for semiconductor
JPS55149370A (en) Nematic liquid crystal composition
JPS53120299A (en) Liquid crystal display unit