JPS5216174A - Method of forming opening for contact zone in manufacturing and processing of semiconductor - Google Patents

Method of forming opening for contact zone in manufacturing and processing of semiconductor

Info

Publication number
JPS5216174A
JPS5216174A JP51087396A JP8739676A JPS5216174A JP S5216174 A JPS5216174 A JP S5216174A JP 51087396 A JP51087396 A JP 51087396A JP 8739676 A JP8739676 A JP 8739676A JP S5216174 A JPS5216174 A JP S5216174A
Authority
JP
Japan
Prior art keywords
semiconductor
manufacturing
processing
contact zone
forming opening
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP51087396A
Other languages
English (en)
Japanese (ja)
Inventor
Supensu Uenderu
Robaato Kuudoraku Daniiru
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NCR Voyix Corp
Original Assignee
NCR Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NCR Corp filed Critical NCR Corp
Publication of JPS5216174A publication Critical patent/JPS5216174A/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/027—Manufacture or treatment of FETs having insulated gates [IGFET] of lateral single-gate IGFETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/40—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Weting (AREA)
JP51087396A 1975-07-25 1976-07-23 Method of forming opening for contact zone in manufacturing and processing of semiconductor Pending JPS5216174A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US59925675A 1975-07-25 1975-07-25

Publications (1)

Publication Number Publication Date
JPS5216174A true JPS5216174A (en) 1977-02-07

Family

ID=24398900

Family Applications (1)

Application Number Title Priority Date Filing Date
JP51087396A Pending JPS5216174A (en) 1975-07-25 1976-07-23 Method of forming opening for contact zone in manufacturing and processing of semiconductor

Country Status (7)

Country Link
JP (1) JPS5216174A (it)
CA (1) CA1076266A (it)
DE (1) DE2632942A1 (it)
FR (1) FR2319198A1 (it)
GB (1) GB1522755A (it)
IT (1) IT1065959B (it)
NL (1) NL7608227A (it)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5031222A (it) * 1973-07-19 1975-03-27

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5941870A (ja) * 1982-08-25 1984-03-08 Toshiba Corp 半導体装置の製造方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5031222A (it) * 1973-07-19 1975-03-27

Also Published As

Publication number Publication date
CA1076266A (en) 1980-04-22
DE2632942A1 (de) 1977-02-03
FR2319198B1 (it) 1980-07-25
FR2319198A1 (fr) 1977-02-18
IT1065959B (it) 1985-03-04
GB1522755A (en) 1978-08-31
NL7608227A (nl) 1977-01-27

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