JPS5249766A - Apparatus for producing semiconductor crystal - Google Patents

Apparatus for producing semiconductor crystal

Info

Publication number
JPS5249766A
JPS5249766A JP12603275A JP12603275A JPS5249766A JP S5249766 A JPS5249766 A JP S5249766A JP 12603275 A JP12603275 A JP 12603275A JP 12603275 A JP12603275 A JP 12603275A JP S5249766 A JPS5249766 A JP S5249766A
Authority
JP
Japan
Prior art keywords
semiconductor crystal
producing semiconductor
cnclosing
letting
molten
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP12603275A
Other languages
Japanese (ja)
Other versions
JPS5428264B2 (en
Inventor
Toshio Tanaka
Kenji Ikeda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP12603275A priority Critical patent/JPS5249766A/en
Publication of JPS5249766A publication Critical patent/JPS5249766A/en
Publication of JPS5428264B2 publication Critical patent/JPS5428264B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Led Devices (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

PURPOSE: To make a uniform epitaxial layer free from fusion penetration, by cnclosing a GaAs substrate and the molten-liquid of a semiconductor material in a chamber containing Ga+As solution and letting epitaxial growth take place therein.
COPYRIGHT: (C)1977,JPO&Japio
JP12603275A 1975-10-20 1975-10-20 Apparatus for producing semiconductor crystal Granted JPS5249766A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP12603275A JPS5249766A (en) 1975-10-20 1975-10-20 Apparatus for producing semiconductor crystal

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12603275A JPS5249766A (en) 1975-10-20 1975-10-20 Apparatus for producing semiconductor crystal

Publications (2)

Publication Number Publication Date
JPS5249766A true JPS5249766A (en) 1977-04-21
JPS5428264B2 JPS5428264B2 (en) 1979-09-14

Family

ID=14924989

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12603275A Granted JPS5249766A (en) 1975-10-20 1975-10-20 Apparatus for producing semiconductor crystal

Country Status (1)

Country Link
JP (1) JPS5249766A (en)

Also Published As

Publication number Publication date
JPS5428264B2 (en) 1979-09-14

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