JPS5232280A - Semiconductor element using electrostatically bonded dielectric ion semiconductor substrate and method of producing same - Google Patents

Semiconductor element using electrostatically bonded dielectric ion semiconductor substrate and method of producing same

Info

Publication number
JPS5232280A
JPS5232280A JP51105092A JP10509276A JPS5232280A JP S5232280 A JPS5232280 A JP S5232280A JP 51105092 A JP51105092 A JP 51105092A JP 10509276 A JP10509276 A JP 10509276A JP S5232280 A JPS5232280 A JP S5232280A
Authority
JP
Japan
Prior art keywords
producing same
semiconductor substrate
semiconductor element
electrostatically bonded
bonded dielectric
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP51105092A
Other languages
English (en)
Inventor
Habaato Furankoomu Moorisu
Yau Uu Shiyuu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Westinghouse Electric Corp
Original Assignee
Westinghouse Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Westinghouse Electric Corp filed Critical Westinghouse Electric Corp
Publication of JPS5232280A publication Critical patent/JPS5232280A/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/04—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements with semiconductor devices only
    • H03F3/16—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements with semiconductor devices only with field-effect devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/0415—Manufacture or treatment of FETs having insulated gates [IGFET] of FETs having ferroelectric gate insulators
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
    • H10D48/50—Devices controlled by mechanical forces, e.g. pressure
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)
JP51105092A 1975-09-04 1976-09-03 Semiconductor element using electrostatically bonded dielectric ion semiconductor substrate and method of producing same Pending JPS5232280A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US05/610,364 US4047214A (en) 1975-09-04 1975-09-04 Electrostatically bonded dielectric-on-semiconductor device, and a method of making the same

Publications (1)

Publication Number Publication Date
JPS5232280A true JPS5232280A (en) 1977-03-11

Family

ID=24444720

Family Applications (1)

Application Number Title Priority Date Filing Date
JP51105092A Pending JPS5232280A (en) 1975-09-04 1976-09-03 Semiconductor element using electrostatically bonded dielectric ion semiconductor substrate and method of producing same

Country Status (7)

Country Link
US (1) US4047214A (ja)
JP (1) JPS5232280A (ja)
BE (1) BE845471A (ja)
CA (1) CA1060573A (ja)
DE (1) DE2638405A1 (ja)
FR (1) FR2323228A1 (ja)
GB (1) GB1554302A (ja)

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FR2348580A1 (fr) * 1976-04-16 1977-11-10 Thomson Csf Dispositif de lecture electrique d'une image optique, utilisant l'effet piezo-resistif
US4259365A (en) * 1978-03-02 1981-03-31 Wolfgang Ruppel Method for creating a ferroelectric or pyroelectric body
US4348611A (en) * 1978-03-02 1982-09-07 Wolfgang Ruppel Ferroelectric or pyroelectric sensor utilizing a sodium nitrite layer
JPS584485B2 (ja) * 1978-06-06 1983-01-26 クラリオン株式会社 周波数選択装置
GB2056810B (en) * 1979-08-14 1984-02-22 Clarion Co Ltd Surface-acoustic-wave device
US4378510A (en) * 1980-07-17 1983-03-29 Motorola Inc. Miniaturized accelerometer with piezoelectric FET
USH655H (en) 1983-02-24 1989-07-04 Radiation hardening of MISFET devices
DD251851A1 (de) * 1984-05-28 1987-11-25 Akad Wissenschaften Ddr Paste fuer die herstellung gedruckter kondensatoren
US4639631A (en) * 1985-07-01 1987-01-27 Motorola, Inc. Electrostatically sealed piezoelectric device
US4767973A (en) * 1987-07-06 1988-08-30 Sarcos Incorporated Systems and methods for sensing position and movement
DE3910164A1 (de) * 1989-03-29 1990-10-04 Siemens Ag Elektrostatischer wandler zur erzeugung von akustischen oberflaechenwellen auf nicht piezoelektrischem halbleitersubstrat
DE3937073A1 (de) * 1989-11-07 1991-05-08 Siemens Ag Integriertes akustoelektronisches bauelement mit gebondeter iii-v-halbleiterschicht
FR2688090B1 (fr) * 1992-02-27 1994-04-08 Commissariat A Energie Atomique Cellule memoire non volatile du type metal-ferroelectrique semi-conducteur.
JPH06132579A (ja) * 1992-09-01 1994-05-13 Canon Inc 変位素子及びそれを用いたプローブ、同プローブを有する機器
US5607453A (en) * 1994-04-28 1997-03-04 Furukawa Co., Ltd. Composite medical treating device composed ferrodielectric substance and semiconductor
JP2643833B2 (ja) * 1994-05-30 1997-08-20 日本電気株式会社 半導体記憶装置及びその製造方法
JPH10284762A (ja) * 1995-02-16 1998-10-23 Asahi Chem Ind Co Ltd 表面弾性波を増幅するための積層構造及び増幅器
US5907768A (en) * 1996-08-16 1999-05-25 Kobe Steel Usa Inc. Methods for fabricating microelectronic structures including semiconductor islands
US5874755A (en) * 1996-11-07 1999-02-23 Motorola, Inc. Ferroelectric semiconductor device and method of manufacture
US20020038990A1 (en) * 2000-08-18 2002-04-04 National Aeronautics And Space Administration Piezoelectric composite device and method for making same
AU2002251690A1 (en) * 2000-12-13 2002-08-12 Rochester Institute Of Technology A method and system for electrostatic bonding
WO2002073673A1 (en) 2001-03-13 2002-09-19 Rochester Institute Of Technology A micro-electro-mechanical switch and a method of using and making thereof
WO2002097865A2 (en) 2001-05-31 2002-12-05 Rochester Institute Of Technology Fluidic valves, agitators, and pumps and methods thereof
US7211923B2 (en) 2001-10-26 2007-05-01 Nth Tech Corporation Rotational motion based, electrostatic power source and methods thereof
US7378775B2 (en) 2001-10-26 2008-05-27 Nth Tech Corporation Motion based, electrostatic power source and methods thereof
DE10235814B3 (de) * 2002-08-05 2004-03-11 Infineon Technologies Ag Verfahren zur lösbaren Montage eines zu prozessierenden Halbleitersubstrats auf einem Trägerwafer
US7217582B2 (en) 2003-08-29 2007-05-15 Rochester Institute Of Technology Method for non-damaging charge injection and a system thereof
US7287328B2 (en) 2003-08-29 2007-10-30 Rochester Institute Of Technology Methods for distributed electrode injection
US20050082624A1 (en) * 2003-10-20 2005-04-21 Evgeni Gousev Germanate gate dielectrics for semiconductor devices
US8581308B2 (en) 2004-02-19 2013-11-12 Rochester Institute Of Technology High temperature embedded charge devices and methods thereof
TW201216363A (en) * 2010-10-01 2012-04-16 Univ Nat Chiao Tung Dielectric structure, transistor and manufacturing method thereof with praseodymium oxide

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3479572A (en) * 1967-07-06 1969-11-18 Litton Precision Prod Inc Acoustic surface wave device
US3585415A (en) * 1969-10-06 1971-06-15 Univ California Stress-strain transducer charge coupled to a piezoelectric material
US3686579A (en) * 1971-06-21 1972-08-22 Zenith Radio Corp Solid-state, acoustic-wave amplifiers
US3868719A (en) * 1973-04-02 1975-02-25 Kulite Semiconductor Products Thin ribbon-like glass backed transducers
US3851280A (en) * 1973-08-01 1974-11-26 Texas Instruments Inc Non-linear signal processing device using square law detection of surface elastic waves with insulated gate field effect transistor

Also Published As

Publication number Publication date
BE845471A (fr) 1977-02-24
DE2638405A1 (de) 1977-03-17
GB1554302A (en) 1979-10-17
CA1060573A (en) 1979-08-14
FR2323228A1 (fr) 1977-04-01
US4047214A (en) 1977-09-06

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