JPS5240969A - Process for production of semiconductor device - Google Patents

Process for production of semiconductor device

Info

Publication number
JPS5240969A
JPS5240969A JP11635175A JP11635175A JPS5240969A JP S5240969 A JPS5240969 A JP S5240969A JP 11635175 A JP11635175 A JP 11635175A JP 11635175 A JP11635175 A JP 11635175A JP S5240969 A JPS5240969 A JP S5240969A
Authority
JP
Japan
Prior art keywords
production
semiconductor device
metal layer
openings
forming
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP11635175A
Other languages
Japanese (ja)
Other versions
JPS6025895B2 (en
Inventor
Iwao Higashinakagaha
Shohei Shima
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP11635175A priority Critical patent/JPS6025895B2/en
Publication of JPS5240969A publication Critical patent/JPS5240969A/en
Publication of JPS6025895B2 publication Critical patent/JPS6025895B2/en
Expired legal-status Critical Current

Links

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)

Abstract

PURPOSE: To readily obtain multilayer wiring free from step disconnection at the openings for elements having shallow diffusion layer, by selectively forming a first metal layer on a semiconductor substrate coated thereon with an insulating layer having contact openings, then forming a second metal layer on the entire surface.
COPYRIGHT: (C)1977,JPO&Japio
JP11635175A 1975-09-29 1975-09-29 Manufacturing method of semiconductor device Expired JPS6025895B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11635175A JPS6025895B2 (en) 1975-09-29 1975-09-29 Manufacturing method of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11635175A JPS6025895B2 (en) 1975-09-29 1975-09-29 Manufacturing method of semiconductor device

Publications (2)

Publication Number Publication Date
JPS5240969A true JPS5240969A (en) 1977-03-30
JPS6025895B2 JPS6025895B2 (en) 1985-06-20

Family

ID=14684793

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11635175A Expired JPS6025895B2 (en) 1975-09-29 1975-09-29 Manufacturing method of semiconductor device

Country Status (1)

Country Link
JP (1) JPS6025895B2 (en)

Cited By (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5818965A (en) * 1981-07-28 1983-02-03 Toshiba Corp Manufacture of semiconductor device
JPS5828856A (en) * 1981-08-13 1983-02-19 Nec Corp Manufacture of semiconductor device
JPS58176975A (en) * 1982-03-30 1983-10-17 シ−メンス・アクチエンゲゼルシヤフト Method of producing integrated mos field effect transistor circuit
JPS592352A (en) * 1982-06-28 1984-01-07 Toshiba Corp Manufacture of semiconductor device
JPS5972132A (en) * 1982-10-19 1984-04-24 Toshiba Corp Forming method for metal and metallic silicide film
JPS5998535A (en) * 1982-11-29 1984-06-06 Hitachi Ltd Manufacturing method of semiconductor integrated circuit
JPS59167016A (en) * 1983-03-14 1984-09-20 Toshiba Corp Method for formation of thin film
JPS59202669A (en) * 1983-05-02 1984-11-16 Hitachi Ltd Semiconductor device and manufacture thereof
JPS60115245A (en) * 1983-11-28 1985-06-21 Toshiba Corp Manufacture of semiconductor device
JPS60130825A (en) * 1983-12-19 1985-07-12 Toshiba Corp Manufacture of semiconductor device
JPS60157237A (en) * 1984-01-26 1985-08-17 Fujitsu Ltd Manufacture of semiconductor device
JPS60186038A (en) * 1984-03-05 1985-09-21 Fujitsu Ltd Semiconductor device
JPS60216579A (en) * 1984-04-12 1985-10-30 Matsushita Electric Ind Co Ltd Manufacture of semiconductor device
JPS60235439A (en) * 1984-05-08 1985-11-22 Matsushita Electric Ind Co Ltd Multilayer wiring formation method

Cited By (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5818965A (en) * 1981-07-28 1983-02-03 Toshiba Corp Manufacture of semiconductor device
JPS5828856A (en) * 1981-08-13 1983-02-19 Nec Corp Manufacture of semiconductor device
JPS58176975A (en) * 1982-03-30 1983-10-17 シ−メンス・アクチエンゲゼルシヤフト Method of producing integrated mos field effect transistor circuit
JPS592352A (en) * 1982-06-28 1984-01-07 Toshiba Corp Manufacture of semiconductor device
JPS5972132A (en) * 1982-10-19 1984-04-24 Toshiba Corp Forming method for metal and metallic silicide film
JPS5998535A (en) * 1982-11-29 1984-06-06 Hitachi Ltd Manufacturing method of semiconductor integrated circuit
JPS59167016A (en) * 1983-03-14 1984-09-20 Toshiba Corp Method for formation of thin film
JPS59202669A (en) * 1983-05-02 1984-11-16 Hitachi Ltd Semiconductor device and manufacture thereof
JPS60115245A (en) * 1983-11-28 1985-06-21 Toshiba Corp Manufacture of semiconductor device
JPS60130825A (en) * 1983-12-19 1985-07-12 Toshiba Corp Manufacture of semiconductor device
JPS60157237A (en) * 1984-01-26 1985-08-17 Fujitsu Ltd Manufacture of semiconductor device
JPS60186038A (en) * 1984-03-05 1985-09-21 Fujitsu Ltd Semiconductor device
JPS60216579A (en) * 1984-04-12 1985-10-30 Matsushita Electric Ind Co Ltd Manufacture of semiconductor device
JPS60235439A (en) * 1984-05-08 1985-11-22 Matsushita Electric Ind Co Ltd Multilayer wiring formation method

Also Published As

Publication number Publication date
JPS6025895B2 (en) 1985-06-20

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