JPS5244578A - Complementary type insulated gate field effect semiconductor device - Google Patents

Complementary type insulated gate field effect semiconductor device

Info

Publication number
JPS5244578A
JPS5244578A JP50120431A JP12043175A JPS5244578A JP S5244578 A JPS5244578 A JP S5244578A JP 50120431 A JP50120431 A JP 50120431A JP 12043175 A JP12043175 A JP 12043175A JP S5244578 A JPS5244578 A JP S5244578A
Authority
JP
Japan
Prior art keywords
semiconductor device
field effect
insulated gate
gate field
complementary type
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP50120431A
Other languages
Japanese (ja)
Inventor
Mikio Kyomasu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP50120431A priority Critical patent/JPS5244578A/en
Publication of JPS5244578A publication Critical patent/JPS5244578A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
    • H10D84/85—Complementary IGFETs, e.g. CMOS
    • H10D84/859—Complementary IGFETs, e.g. CMOS comprising both N-type and P-type wells, e.g. twin-tub

Landscapes

  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)

Abstract

PURPOSE:A C-MOSFET wherein an N<-> or P<-> type layer of nearly uniform impurity concentration distribution is provided over a P type or N type semiconductor substrate whereby the base length of parasitically produced transistors are made longer and their amplification factor is reduced.
JP50120431A 1975-10-06 1975-10-06 Complementary type insulated gate field effect semiconductor device Pending JPS5244578A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP50120431A JPS5244578A (en) 1975-10-06 1975-10-06 Complementary type insulated gate field effect semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP50120431A JPS5244578A (en) 1975-10-06 1975-10-06 Complementary type insulated gate field effect semiconductor device

Publications (1)

Publication Number Publication Date
JPS5244578A true JPS5244578A (en) 1977-04-07

Family

ID=14786032

Family Applications (1)

Application Number Title Priority Date Filing Date
JP50120431A Pending JPS5244578A (en) 1975-10-06 1975-10-06 Complementary type insulated gate field effect semiconductor device

Country Status (1)

Country Link
JP (1) JPS5244578A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51116849A (en) * 1975-04-07 1976-10-14 Du Pont Mitsui Fluorochem Co Ltd Powdered copolymers from ethylene and fluorine containing olefin

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4919779A (en) * 1972-04-14 1974-02-21

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4919779A (en) * 1972-04-14 1974-02-21

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51116849A (en) * 1975-04-07 1976-10-14 Du Pont Mitsui Fluorochem Co Ltd Powdered copolymers from ethylene and fluorine containing olefin

Similar Documents

Publication Publication Date Title
JPS51128268A (en) Semiconductor unit
ES417610A1 (en) Semiconductor device and method of manufacturing same
JPS51135373A (en) Semiconductor device
JPS5230388A (en) Semiconductor integrated circuit device constructed with insulating ga te field effect transistor
JPS5232277A (en) Insulated gate type field-effect transistor
SE7507147L (en) FIELD POWER TRANSISTOR.
JPS52146574A (en) Semiconductor device
JPS51127681A (en) Manufacturing process of semiconductor device
JPS5244578A (en) Complementary type insulated gate field effect semiconductor device
JPS5633881A (en) Manufacture of semiconductor device
JPS5242381A (en) Semiconductor storage device
JPS5248475A (en) Semiconductor device
JPS5214388A (en) Process for complementary insulated gate semiconductor integrated circuit device
JPS5245280A (en) Field effect transistor of schottky barrier type
JPS51138394A (en) Semiconductor device
JPS5263074A (en) Insulated gate type field effect transistor and its production
JPS51127685A (en) Lateral-type semiconductor device
JPS5235584A (en) Manufacturing process of semiconductor device
JPS51123073A (en) Insulated gate (type) semiconductor device
JPS5234675A (en) Manufacturing process of semiconductor device
JPS5286086A (en) Field effect transistor
JPS524789A (en) Semiconductor equipment
JPS51120683A (en) Field-effect transistor and its fabrication
JPS5272581A (en) Production of semiconductor element
JPS5245885A (en) Semiconductor integrated circuit device and process for production of same