JPS5245885A - Semiconductor integrated circuit device and process for production of same - Google Patents

Semiconductor integrated circuit device and process for production of same

Info

Publication number
JPS5245885A
JPS5245885A JP50120731A JP12073175A JPS5245885A JP S5245885 A JPS5245885 A JP S5245885A JP 50120731 A JP50120731 A JP 50120731A JP 12073175 A JP12073175 A JP 12073175A JP S5245885 A JPS5245885 A JP S5245885A
Authority
JP
Japan
Prior art keywords
production
same
integrated circuit
semiconductor integrated
circuit device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP50120731A
Other languages
Japanese (ja)
Inventor
Hiroo Sakaba
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP50120731A priority Critical patent/JPS5245885A/en
Publication of JPS5245885A publication Critical patent/JPS5245885A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/65—Integrated injection logic
    • H10D84/655—Integrated injection logic using field effect injector structures

Landscapes

  • Logic Circuits (AREA)
  • Bipolar Transistors (AREA)
  • Bipolar Integrated Circuits (AREA)
  • Non-Volatile Memory (AREA)

Abstract

PURPOSE:To provide a gate electrode that should form an inversion layer on the surface of the base region of a lateral transistor, on said base region by way of an insulating film, thereby reducing an occupying area and increasing the scale of integration of an IIL ligic circuit.
JP50120731A 1975-10-08 1975-10-08 Semiconductor integrated circuit device and process for production of same Pending JPS5245885A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP50120731A JPS5245885A (en) 1975-10-08 1975-10-08 Semiconductor integrated circuit device and process for production of same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP50120731A JPS5245885A (en) 1975-10-08 1975-10-08 Semiconductor integrated circuit device and process for production of same

Publications (1)

Publication Number Publication Date
JPS5245885A true JPS5245885A (en) 1977-04-11

Family

ID=14793581

Family Applications (1)

Application Number Title Priority Date Filing Date
JP50120731A Pending JPS5245885A (en) 1975-10-08 1975-10-08 Semiconductor integrated circuit device and process for production of same

Country Status (1)

Country Link
JP (1) JPS5245885A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55159900U (en) * 1979-05-01 1980-11-17
US4395723A (en) * 1980-05-27 1983-07-26 Eliyahou Harari Floating substrate dynamic RAM cell with lower punch-through means

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51117585A (en) * 1975-04-09 1976-10-15 Fujitsu Ltd Semiconductor equipment
JPS5210088A (en) * 1975-07-15 1977-01-26 Nec Corp Structure of semiconductor integrated circuit

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51117585A (en) * 1975-04-09 1976-10-15 Fujitsu Ltd Semiconductor equipment
JPS5210088A (en) * 1975-07-15 1977-01-26 Nec Corp Structure of semiconductor integrated circuit

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55159900U (en) * 1979-05-01 1980-11-17
US4395723A (en) * 1980-05-27 1983-07-26 Eliyahou Harari Floating substrate dynamic RAM cell with lower punch-through means

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