JPS5244580A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS5244580A
JPS5244580A JP11979975A JP11979975A JPS5244580A JP S5244580 A JPS5244580 A JP S5244580A JP 11979975 A JP11979975 A JP 11979975A JP 11979975 A JP11979975 A JP 11979975A JP S5244580 A JPS5244580 A JP S5244580A
Authority
JP
Japan
Prior art keywords
semiconductor device
inversion
prevention
insulating
obtaining
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP11979975A
Other languages
Japanese (ja)
Inventor
Susumu Murakami
Hideyuki Yagi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP11979975A priority Critical patent/JPS5244580A/en
Publication of JPS5244580A publication Critical patent/JPS5244580A/en
Pending legal-status Critical Current

Links

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Thyristors (AREA)

Abstract

PURPOSE: To form a metal conductive film for prevention of inversion through insulating and protecting films thereby obtaining a highly reliable planer type semiconductor device having high resistance to reverse voltage.
COPYRIGHT: (C)1977,JPO&Japio
JP11979975A 1975-10-06 1975-10-06 Semiconductor device Pending JPS5244580A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11979975A JPS5244580A (en) 1975-10-06 1975-10-06 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11979975A JPS5244580A (en) 1975-10-06 1975-10-06 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS5244580A true JPS5244580A (en) 1977-04-07

Family

ID=14770503

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11979975A Pending JPS5244580A (en) 1975-10-06 1975-10-06 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS5244580A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4423433A (en) * 1979-06-04 1983-12-27 Hitachi, Ltd. High-breakdown-voltage resistance element for integrated circuit with a plurality of multilayer, overlapping electrodes
US5293061A (en) * 1990-04-09 1994-03-08 Seiko Instruments Inc. Semiconductor device having an isolation layer region on the side wall of a groove

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4423433A (en) * 1979-06-04 1983-12-27 Hitachi, Ltd. High-breakdown-voltage resistance element for integrated circuit with a plurality of multilayer, overlapping electrodes
US5293061A (en) * 1990-04-09 1994-03-08 Seiko Instruments Inc. Semiconductor device having an isolation layer region on the side wall of a groove
US5352626A (en) * 1990-04-09 1994-10-04 Seiko Instruments Inc. Method for making a semiconductor device having an isolated layer region on the side wall of a groove

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