Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Hitachi Ltd
Original Assignee
Hitachi Ltd
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Publication date
Application filed by Hitachi LtdfiledCriticalHitachi Ltd
Priority to JP50121818ApriorityCriticalpatent/JPS5246781A/en
Publication of JPS5246781ApublicationCriticalpatent/JPS5246781A/en
PURPOSE: To adopt an isolation method involving etching of the recessed portions of Si, and a method of forming two steps of epitaxial grown Si layers, thereby composing an IC consisting of high dielectric strength vertical type field effect and ordinary transistors on one semiconductor substrate.
COPYRIGHT: (C)1977,JPO&Japio
JP50121818A1975-10-111975-10-11Process for production of semiconductor integrated circuit
PendingJPS5246781A
(en)